KR102661051B1 - High Speed Diamond-Like Carbon Thin Film Deposition Method Using Xylene Precursor-Based Medium Frequency Plasma Chemical Vapor Deposition Device And Diamond-Like Carbon Thin Film Manufactured By The Method - Google Patents

Abstract

The present invention relates to a method for depositing a pseudo-diamond thin film using a mid-frequency plasma chemical vapor deposition device and a pseudo-diamond thin film produced thereby. A method for depositing a pseudo-diamond thin film using a mid-frequency plasma chemical vapor deposition device includes (i) any (ii) depositing a first buffer layer using silicon and plasma gas on a substrate made of a material, and (ii) vaporizing a xylene liquid precursor on the first buffer layer to deposit a diamond-like thin film at high speed. Wear-resistant properties on the surfaces of various types of substrates such as glass, stainless steel, and plastic at room temperature by using buffer layer formation technology to strengthen adhesion to mid-frequency power supply-based plasma chemical vapor deposition devices and vaporizing liquid xylene-based precursors for pseudo-diamond deposition. It has a very large industrial impact because it can deposit a pseudo-diamond thin film at a higher speed than the conventional deposition method using methane or ethylene.

Description

High Speed Diamond-Like Carbon Thin Film Deposition Method Using Xylene Precursor-Based Medium Frequency Plasma Chemical Vapor Deposition Device And Diamond- Like Carbon Thin Film Manufactured By The Method}

The present invention relates to a pseudo-diamond thin film deposition method using a mid-frequency plasma chemical vapor deposition device and a pseudo-diamond thin film produced thereby, and more specifically, to a mid-frequency power supply-based plasma chemical vapor deposition device and a liquid gas precursor for depositing carbon. Development of a plasma deposition method based on the technology of vaporizing xylene, a deposition method using this to deposit a pseudo-diamond thin film with wear-resistant properties on the surface of various types of substrates such as glass, stainless steel, and plastic, and a deposition method for the pseudo-diamond thin film produced thereby. It is about.

There are two main ways to enhance wear resistance on the surface of a material: wet treatment and dry treatment. The most common wet treatment method is plating, and dry treatment methods include atmospheric pressure coating, vacuum coating, heat treatment, and plasma coating. Among these, pseudo-diamond deposition mainly uses plasma chemical vapor deposition technology, which involves injecting carbon-containing gas and depositing it in a plasma atmosphere.

Plasma chemical vapor deposition technology is named based on the plasma generating power source. High-frequency plasma, pulsed direct current plasma, microwave plasma, high-density inductively coupled plasma, electron diffraction resonance plasma, and arc plasma using high frequencies have been widely used as power sources for plasma deposition devices. Recently, patents related to mid-frequency plasma devices using mid-frequency power sources have been applied for.

The present invention is the development of a similar diamond thin film manufacturing technology using a patent application previously filed by the applicant (patent application number: 10-2020-0010244, vacuum plasma processing device using mid-frequency power, applicant: Inje University Industry-Academic Cooperation Foundation), It is about a pseudo-diamond thin film manufacturing technology that satisfies the black coating conditions that can minimize light reflection on the surface of the material and strengthens the wear resistance characteristics of the material.

In particular, it concerns the development of technology to vaporize and use liquid Xylene, as distinguished from the conventional use of gas-based carbon precursors such as methane and ethylene. As a result, the deposition rate of pseudo-diamond is at least 2-4 times higher than when methane or ethylene gas precursors are used, and high-speed deposition is possible using mid-frequency plasma, making it very economical as a pseudo-diamond deposition technology.

KR 10-2218167 (registered on 2021.02.16)

The problems to be solved through the present invention are: first, the production of a black-like diamond thin film that minimizes light reflection on the surface of any material is conveniently and stably implemented using a newly developed plasma chemical vapor deposition device based on a mid-frequency power source; It is done.

The mid-frequency plasma power supply is more economical and generates more stable plasma than the high-frequency plasma power supply, which is a representative existing plasma power supply. In particular, compared to high-frequency power supplies, 1) the design of the power device is simple as there is no need for a separate matching box, and 2) the number of parts used is small, and costs can be significantly reduced, making it economical. 3) Comparing frequencies, the high frequency uses the megahertz range, but the mid-frequency used in this invention can be distinguished as the 10,000 - 100,000 Hz range. The downside is that heat release can be relatively high, but that can be a trade-off depending on the individual process. In particular, according to the results of an experiment conducted by the present inventors using a Yangmuir probe, the electron temperature of mid-frequency plasma is relatively higher than that of high-frequency plasma, and the electron energy is accordingly large, leading to the conclusion that the adhesion of thin films can be increased during plasma chemical vapor deposition. . This feature is considered to be a very meaningful phenomenon because it can greatly enhance the wear resistance of thin films when depositing thin films, such as pseudo-diamond deposition.

Second, the problem to be solved through the present invention is that in order to deposit a diamond-like thin film of a certain thickness or more (for example, >1 μm), a buffer layer that can reduce stress is required between the material substrate and the diamond-like thin film deposited film. In general, without this buffer layer, the adhesion of the diamond-like thin film on a stainless steel substrate is very poor, eventually leading to peeling. Therefore, the development conditions for this buffer layer are very important. Developing this buffer layer with a previously applied mid-frequency plasma chemical vapor deposition device and developing a technology to continuously deposit a relatively thick diamond-like thin film is very important from the perspective of commercialization of the technology.

A distinct problem to be solved in this invention is to increase the deposition rate of pseudo-diamond. When using conventional methane (CH ₄ ) or ethylene (C ₂ H ₄ ), it was found that the deposition rate was relatively higher when ethylene was used than methane. A patent related to the development of this technology has already been applied for separately (application number: 10-2021-0045283). Here, if methane or ethylene is used, the deposition rate of similar diamond is about 0.1 um/min using mid-frequency plasma, so if you want to deposit a relatively thick film of about 3 um, a considerable amount of time is required. In fact, the experimental results show that when a deposition time of about 90 minutes was used, a deposition thickness of about 3 um was obtained with a mixed gas of ethylene and argon.

Accordingly, this invention was developed to solve the problem of improving productivity by increasing the speed of pseudo-diamond deposition. The key point is that, using the mid-frequency plasma device applied for by the present applicant, pseudo-diamond is deposited at high speed based on xylene, a new liquid precursor, without using existing methane or ethylene, and eliminates the problems that arise when depositing a thick film. The purpose is to develop technology to deposit stable pseudo-diamond thin films and thick films by eliminating delamination from the substrate.

A method of depositing a pseudo-diamond thin film using a mid-frequency plasma chemical vapor deposition device is introduced.

To this end, the present invention includes the steps of (i) depositing a first buffer layer using silicon and plasma gas on a substrate made of any material; and (ii) depositing a diamond-like thin film on the first buffer layer using xylene as a liquid precursor; It is characterized by including.

The first buffer layer is formed by depositing an amorphous silicon thin film of a certain thickness using silane (SiH ₄ ) and argon (Ar) gas, and the pseudo-diamond thin film is formed by mixing xylene with argon (Ar) gas to produce mid-frequency plasma chemistry. It is characterized by being formed by vapor deposition.

The second buffer layer may be formed by chemically depositing silicon carbide (SiC) by additionally mixing silane (SiH _{4 )} gas with a plasma containing xylene and argon (Ar) gas.

In this case, silane (SiH _{4 )} gas is additionally mixed with the plasma mixed with the mid-frequency xylene precursor and argon (Ar) gas to chemically form silicon carbide (SiC) for a process time of 3 to 10 minutes. , it is preferable to perform mid-frequency plasma deposition in which argon (Ar) gas is mixed with the xylene precursor.

The mid-frequency plasma chemical vapor deposition apparatus includes a reaction chamber that is independent from the outside and provides a predetermined sealed space; A vaporizer that vaporizes the liquid precursor and supplies it to the reaction chamber at a predetermined pressure; a reaction gas supply unit that supplies reaction gas to the reaction chamber at a predetermined pressure; a reaction gas discharge unit that discharges a reaction gas in which the reaction has been completed in the reaction chamber; a mid-frequency power supply device for supplying mid-frequency power within the reaction chamber; and two electrodes respectively connected to the mid-frequency power supply and installed to face each other inside the reaction chamber. It is characterized by including.

The output frequency applied to the electrode is characterized in that plasma is generated using a frequency of 20 to 100 KHz.

The circuit that constitutes the mid-frequency power supply uses a half-bridge circuit design to transmit 50-60 Hz, 100-220 V alternating current input power, and the size of the mid-frequency power is determined by modulating the input frequency and boosting it through a transformer for output. It is characterized by generating a frequency of 20 to 100 kHz at the terminal.

The vaporizer is characterized in that non-reactive gas including nitrogen gas is injected into a bubbler to generate bubbles, which are then injected into the reactor for deposition.

The vaporizer is characterized by vaporizing the liquid precursor into vapor and injecting it into the reactor for deposition using a liquid flow rate controller capable of controlling the liquid mass per hour.

A pseudo-diamond thin film manufactured according to the pseudo-diamond thin film deposition method is disclosed.

In order to achieve the object of the present invention as described above, a method of depositing a pseudo-diamond thin film using a mid-frequency plasma chemical vapor deposition device includes: (i) forming a first buffer layer using silicon and plasma gas on a substrate made of any material; (ii) depositing a diamond-like thin film using a xylene-based liquid precursor on the first buffer layer; A deposition method is provided.

In the present invention, after step (i), the step of depositing a second buffer layer by depositing silicon carbide on the first buffer layer is further performed, and liquid xylene is vaporized on the second buffer layer using a precursor. A pseudo-diamond thin film can be deposited at high speed.

Here, the first buffer layer is formed by depositing an amorphous silicon thin film of a certain thickness using silane (SiH ₄ ) and argon (Ar) gas, and the pseudo-diamond thin film is formed by depositing argon (Ar) gas on xylene. It can be mixed and formed by mid-frequency plasma chemical vapor deposition.

Meanwhile, the second buffer layer may be formed by chemically depositing silicon carbide (SiC) by additionally mixing silane (SiH _{4 )} gas with a plasma containing xylene and argon (Ar) gas.

In this case, silane (SiH _{4 )} gas is additionally mixed with the plasma mixed with the mid-frequency xylene precursor and argon (Ar) gas to chemically form silicon carbide (SiC) for a process time of 3 to 10 minutes. , it is preferable to perform mid-frequency plasma deposition in which argon (Ar) gas is mixed with the xylene precursor.

The mid-frequency plasma chemical vapor deposition device according to the present invention includes a reaction chamber that is independent from the outside and provides a predetermined sealed space, a vaporizer that stably vaporizes xylene, a liquid precursor, and supplies it to the reactor, and a mixture of argon gas, etc. A gas supply unit for supplying the gas to the reaction chamber at a predetermined pressure, a reaction gas discharge unit for discharging reaction gas for which the reaction has been completed in the reaction chamber, a mid-frequency power supply device for supplying mid-frequency power within the reaction chamber, They are each connected to the mid-frequency power supply device and include two electrodes installed to face each other inside the reaction chamber.

The output frequency applied to the electrode generates plasma using a frequency of 20 to 100 KHz.

In addition, the circuit that constitutes the mid-frequency power supply uses a half-bridge circuit design to transmit 50-60 Hz, 100-220 V alternating current input power, and the size of the mid-frequency power is boosted through a transformer after modulating the input frequency. It is possible to generate a frequency of 20 to 100 kHz at the output terminal.

1 to 3 are diagrams of a mid-frequency plasma chemical vapor deposition device for depositing pseudo-diamond using a vaporizer that vaporizes the xylene liquid precursor used in the present invention, and shows another type of vaporizer for the xylene liquid precursor used in the present invention. This is a diagram of a mid-frequency plasma chemical vapor deposition device that deposits pseudo-diamond using .
Figure 4 shows photos of pseudo-diamond deposition results using a xylene precursor-based mid-frequency plasma chemical vapor deposition device depending on the presence or absence of a buffer layer (the difference in peeling phenomenon when depositing pseudo-diamond using a xylene precursor depending on the presence or absence of a buffer layer) understandable).
Figure 5 is a graph of luminescence characteristics according to wavelength obtained with a plasma luminescence meter when depositing an amorphous silicon (amorphous Si) buffer layer using SiH ₄ +Ar plasma gas before xylene deposition using a mid-frequency plasma chemical vapor deposition apparatus.
Figure 6 is a graph of luminescence characteristics according to wavelength obtained with a plasma luminescence meter during plasma deposition of xylene vapor and argon mixed gas (top) and xylene (bottom) using a mid-frequency plasma chemical vapor deposition device.
Figure 7 is an X-ray Diffraction (XRD) surface component analysis graph of a diamond-like thin film deposited using xylene mid-frequency plasma chemical vapor deposition technology.
Figure 8 is a graph showing the results of Energy Dispersive

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. However, the present invention is not limited to the embodiments disclosed below and will be implemented in various different forms, but the present embodiments only serve to ensure that the disclosure of the present invention is complete and to fully convey the scope of the invention to those skilled in the art. This is provided to inform you.

Figure 1 is a configuration diagram of a mid-frequency plasma chemical vapor deposition device used in the present invention. The mid-frequency plasma chemical vapor deposition apparatus 100 according to the present invention includes a reaction chamber 110 that is independent from the outside and provides a predetermined sealed space, and a mid-frequency power supply device for supplying mid-frequency power within the reaction chamber 110 ( 120) and two electrodes 130 and 140 respectively connected to the mid-frequency power supply device 120 and installed to face each other inside the reaction chamber 110.

Here, in order to inject and discharge the reaction gas into the reaction chamber 110, the reaction chamber 110 includes a reaction gas supply unit 112 that supplies the reaction gas at a predetermined pressure, and a reaction gas supply unit 112 that supplies the reaction gas at a predetermined pressure to the reaction chamber 110. A reaction gas discharge unit 114 is formed to discharge the completed reaction gas.

The reaction gas supply unit 112 and the reaction gas discharge unit 114 are connected to an external gas injection and exhaust system to allow the inflow and outflow of reaction gas.

In addition, inside the reaction chamber 110, two opposing electrodes 110 and 120 are provided at the top and bottom, and the electrodes 110 and 120 may be formed of plate-shaped electrodes facing each other. .

In general, compared to the atmospheric pressure mid-frequency plasma device, there are almost no examples of use of the vacuum mid-frequency plasma device. In the development of vacuum mid-frequency plasma devices, impedance matching for stable plasma generation is most important. Impedance matching is determined by the inductance of the transformer of the mid-frequency power supply, the reactor connected to it, and the state of the electrodes therein.

Therefore, even if you have a mid-frequency power supply, configuring a vacuum system to generate plasma is a completely separate problem of a different technological level. Ultimately, a deep understanding and experience with the mid-frequency power device 120, vacuum system, and electrode configuration is essential.

In the present invention, the key point is to properly apply the electricity supplied from the mid-frequency power supply device 120 to the electrodes 130 and 140 of the vacuum reaction chamber 110 through impedance matching to generate plasma. If the conditions are not met, electrical failure may occur due to overload of the mid-frequency power supply device 120, and various other problems may occur in the system.

Therefore, it is important to match the impedance of the transformer of the mid-frequency power supply and the electrical characteristics of the vacuum system load.

As a result of the present applicant's experiment, it was found that it was most desirable to generate plasma using an output frequency of 20 to 100 KHz applied to the electrodes 110 and 120. If the output frequency applied to the electrodes 110 and 120 is less than 20 KHz or more than 100 KHz, plasma generation is not stable or smooth, so the output applied to the electrodes 110 and 120 It is most desirable to use a frequency of 20 to 100 KHz.

In addition, the circuit that constitutes the mid-frequency power supply uses a half-bridge circuit design to transmit 50-60 Hz, 100-220 V alternating current input power, and the size of the mid-frequency power is boosted through a transformer after modulating the input frequency. It is possible to generate a frequency of 20 to 100 kHz at the output terminal.

[Example]

1) Mid-frequency plasma chemical vapor deposition device

This will be briefly described with reference to the mid-frequency plasma chemical vapor deposition device previously filed by the present applicant (see Figure 1). In the present invention, the mid-frequency power supply used a 555 timer to generate frequency. 220 V power was applied, the overall pressure was reduced to 15 V, the capacitor was charged, and power was supplied to the withstand voltage power transistor in a half-bridge electric circuit configuration. The primary voltage supplied from the half bridge was increased to high voltage secondary power using a step-up transformer to supply voltage and current to the plasma power electrode.

The mid-frequency plasma electrode was installed with two electrodes facing each other and parallel to each other inside the vacuum reactor. The distance between the two electrodes was fixed at approximately 7 cm.

The electrode used as a chuck to lift the sample was made of stainless steel in the form of a cylinder with a diameter of 150 mm. The two electrodes and the reactor system were electrically insulated, and the reactor system was grounded for safety.

2) Xylene liquid precursor vaporization device

Figure 2 is a diagram showing a vaporizer capable of vaporizing xylene in a liquid state at room temperature and atmospheric pressure connected to a mid-frequency plasma chemical vapor deposition device. Using this first type of xylene vaporization technology, the method of vaporizing xylene and controlling the amount is to inject nitrogen gas into a sealed container (bubbler) containing xylene liquid to generate bubbles, and then The gas flow rate per minute (standard cubic centimeter per minute, ((sccm), cm ³ /min) is controlled using a gas mass flow controller (MFC) that can control the amount of xylene vapor.

Figure 3 is another diagram showing a vaporizer capable of vaporizing liquid xylene connected to a mid-frequency plasma chemical vapor deposition device. Using this second method of xylene vaporization technology, first put the xylene liquid into a closed container, and then use a Liquid Flow Meter (LFM) to control the amount of liquid xylene by mass per hour (g/hour). ) can be done in this way. The liquid xylene released in this way can be mixed with nitrogen gas, which can be easily controlled by a gas mass flow controller, and flowed into the mid-frequency plasma chemical vapor deposition reactor to perform a plasma deposition process.

There are two main methods for vaporizing xylene that exists in a liquid state at room temperature and atmospheric pressure, as described in Figures 2 and 3. In this experiment, both methods were used and each xylene liquid precursor was used. As a result, a pseudo-diamond thin film could be deposited.

3) Real-time plasma luminescence graph analysis during silicon deposition as a buffer layer and pseudo-diamond deposition using xylene

Figure 4 is a graph analyzing the light emitted from the plasma in real time when depositing an amorphous silicon thin film using SiH4+Ar before depositing a pseudo-diamond using xylene. The silicon thin film deposited at this time can be used as a buffer layer on the substrate before depositing a similar diamond thin film with xylene. This buffer layer has the effect of reducing stress during close contact between the substrate and the diamond-like thin film, thereby preventing peeling of the pseudo-diamond thin film.

Referring to Figure 4, when a mixed gas of SiH ₄ (20% SiH ₄ in N ₂ ) and Ar is used, Si (390.55 nm) is used as a mid-frequency plasma gas species during deposition of an amorphous silicon thin film inside the mid-frequency plasma chemical vapor deposition reactor. Atomic peaks such as , H (656.289 nm), Ar (750.40 nm), and N (828.27 nm) could be observed.

Looking at Figure 5, when a mixed gas of xylene (p- This is a graph analyzing the emission peak emitted from the plasma. It was found that plasma species such as Ar (750.386 nm), H (656.289 nm), and CH (431 nm) existed in the plasma (phase) where xylene and argon gas were mixed. In the case of mid-frequency xylene plasma (bottom), atomic peaks of plasma species such as H (656.289 nm) and CH (431 nm) could be confirmed. By utilizing each of these plasma emission peaks, it is possible to accurately analyze the real-time status of the step-by-step plasma deposition process, allowing for more efficient process management.

4) Development of buffer layer deposition technology for mid-frequency plasma chemical vapor deposition-like diamond thin film deposition

The buffer layer for depositing a diamond-like thin film using a mid-frequency plasma chemical vapor deposition device was first deposited as a buffer layer using mid-frequency silane (SiH ₄ ) and argon plasma gas.

The deposition conditions at this time were 100 W mid-frequency power source power, 10 sccm SiH ₄ (20% SiH ₄ in SiH ₄ + N ₂ mixed gas), 5 sccm Ar, 100 mTorr process pressure, and 10 minutes of deposition time.

In the case of glass and silicon substrates, even without this buffer layer, even when pseudo-diamond was deposited with xylene, adhesion was good and peeling of the thin film hardly occurred. However, when pseudo-diamond was deposited with xylene on a stainless steel substrate, peeling of the thin film could not be avoided without a buffer layer (see Figure 6).

However, when a silicon thin film was first deposited as a buffer layer on all of glass, silicon substrate, and stainless silicon, and then diamond-like was deposited with xylene, peeling did not occur and adhesion was stable (Figure 6, Sample No. 201205-1, 201205- 2). Therefore, if the silicon buffer layer is deposited using silane and then deposited using a mid-frequency plasma chemical vapor deposition device using xylene, a liquid precursor, a diamond-like thin film is deposited at a speed approximately 2-3 times faster than when using gas precursors of methane and ethylene. I knew I could do it.

Figure 7 is a graph of EDS analysis to measure the components of pseudo-diamond deposited using a xylene precursor. EDS analyzes the X-ray characteristics of the emitted elements, and when the thickness of the pseudo-diamond film is thin, the components of the substrate or buffer layer are also emitted and can be measured at the same time. Considering such conditions, it was found that almost all of the components of pseudo-diamonds were carbon.

Figure 8 is a graph of XRD analysis to analyze the crystallinity of pseudo-diamond deposited using a xylene precursor. Looking at the graph, you can see that crystalline diamond peaks at (110), (111), and (220) are visible while the amorphous graphite curve is widely distributed.

The rights of the present invention are not limited to the embodiments described above but are defined by the claims, and those skilled in the art can make various changes and modifications within the scope of the claims. This is self-evident.

100: mid-frequency plasma chemical vapor deposition device 110: reaction chamber
112: reaction gas supply unit 114: reaction gas discharge unit
120: mid-frequency power device 130, 140: electrode

Claims (10)

A method of depositing a pseudo-diamond thin film using a mid-frequency plasma chemical vapor deposition device,
(i) depositing a first buffer layer using silicon and plasma gas on a substrate made of an arbitrary material;
(ii) after step (i), depositing a second buffer layer by depositing silicon carbide on the first buffer layer;
(iii) depositing a diamond-like thin film by vaporizing xylene, a liquid precursor, on the second buffer layer;
The first buffer layer is formed by depositing an amorphous silicon thin film of a certain thickness using silane (SiH ₄ ) and argon (Ar) gas,
The second buffer layer is formed by chemically depositing silicon carbide (SiC) by additionally mixing silane (SiH ₄ ) gas with a plasma in which argon (Ar) gas is mixed with a mid-frequency xylene precursor. Silane (SiH ₄ ) gas is additionally mixed with the plasma mixed with the ren precursor and argon (Ar) gas to chemically produce silicon carbide (SiC) for a process time of 3 to 10 minutes, and then argon is added to the xylene precursor. Performs mid-frequency plasma deposition mixed with (Ar) gas,
A pseudo-diamond thin film deposition method using a mid-frequency plasma chemical vapor deposition apparatus, characterized in that the pseudo-diamond thin film is formed by mid-frequency plasma chemical vapor deposition by mixing xylene with argon (Ar) gas. delete delete delete In claim 1,
The mid-frequency plasma chemical vapor deposition device,
A reaction chamber that is independent from the outside and provides a predetermined sealed space;
A vaporizer that vaporizes the liquid precursor and supplies it to the reaction chamber at a predetermined pressure;
a reaction gas supply unit that supplies reaction gas to the reaction chamber at a predetermined pressure;
a reaction gas discharge unit discharging a reaction gas in which the reaction has been completed in the reaction chamber;
a mid-frequency power supply device for supplying mid-frequency power within the reaction chamber; and
Two electrodes each connected to the mid-frequency power supply and installed to face each other inside the reaction chamber;
A pseudo-diamond thin film deposition method using a mid-frequency plasma chemical vapor deposition device including. In claim 5,
A pseudo-diamond thin film deposition method using a mid-frequency plasma chemical vapor deposition device, characterized in that the output frequency applied to the electrode generates plasma using a frequency of 20 to 100 KHz. In claim 5,
The circuit that constitutes the mid-frequency power supply uses a half-bridge circuit design for 50-60Hz, 100-220V alternating current input power and power transmission,
A pseudo-diamond thin film deposition method using a mid-frequency plasma chemical vapor deposition device, characterized in that the size of the mid-frequency power is boosted through a transformer after modulating the input frequency to generate a frequency of 20 to 100 kHz at the output terminal. In claim 5,
A pseudo-diamond thin film deposition method using a mid-frequency plasma chemical vapor deposition device, characterized in that the vaporizer injects a non-reactive gas including nitrogen gas into a bubbler to generate bubbles and injects them into a reactor for deposition. In claim 5
The vaporizer vaporizes the liquid precursor into vapor using a liquid flow rate controller capable of controlling the liquid mass per hour and injects it into the reactor to deposit a pseudo-diamond thin film using a mid-frequency plasma chemical vapor deposition device. Deposition method. A pseudo-diamond thin film manufactured according to the pseudo-diamond thin film deposition method according to any one of claims 1, 5 to 9.

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