NO940494D0 - Fremgangsmåte og apparat for diamantsyntese - Google Patents

Fremgangsmåte og apparat for diamantsyntese

Info

Publication number
NO940494D0
NO940494D0 NO940494A NO940494A NO940494D0 NO 940494 D0 NO940494 D0 NO 940494D0 NO 940494 A NO940494 A NO 940494A NO 940494 A NO940494 A NO 940494A NO 940494 D0 NO940494 D0 NO 940494D0
Authority
NO
Norway
Prior art keywords
synthesis method
diamond synthesis
diamond
synthesis
Prior art date
Application number
NO940494A
Other languages
English (en)
Other versions
NO940494L (no
Inventor
Toshimichi Ito
Masaaki Nosaka
Ikuo Hosoya
Original Assignee
Idemitsu Petrochemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27308868&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=NO940494(D0) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP62099118A external-priority patent/JPH0818905B2/ja
Priority claimed from JP10919387A external-priority patent/JPS63274692A/ja
Priority claimed from JP62301035A external-priority patent/JPH01141897A/ja
Publication of NO940494L publication Critical patent/NO940494L/no
Application filed by Idemitsu Petrochemical Co filed Critical Idemitsu Petrochemical Co
Publication of NO940494D0 publication Critical patent/NO940494D0/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Combustion & Propulsion (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
NO940494A 1987-04-22 1994-02-14 Fremgangsmåte og apparat for diamantsyntese NO940494D0 (no)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62099118A JPH0818905B2 (ja) 1987-04-22 1987-04-22 ダイヤモンドの合成方法および合成装置
JP10919387A JPS63274692A (ja) 1987-05-02 1987-05-02 ダイヤモンドの合成方法
JP62301035A JPH01141897A (ja) 1987-11-28 1987-11-28 ダイヤモンドの合成方法

Publications (2)

Publication Number Publication Date
NO940494L NO940494L (no) 1988-10-24
NO940494D0 true NO940494D0 (no) 1994-02-14

Family

ID=27308868

Family Applications (2)

Application Number Title Priority Date Filing Date
NO881723A NO881723L (no) 1987-04-22 1988-04-21 Fremgangsmaate og innretning for fremstilling av diamanter.
NO940494A NO940494D0 (no) 1987-04-22 1994-02-14 Fremgangsmåte og apparat for diamantsyntese

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NO881723A NO881723L (no) 1987-04-22 1988-04-21 Fremgangsmaate og innretning for fremstilling av diamanter.

Country Status (6)

Country Link
US (2) US4985227A (no)
EP (1) EP0288065B1 (no)
KR (1) KR910008728B1 (no)
CA (1) CA1327772C (no)
DE (1) DE3884658T2 (no)
NO (2) NO881723L (no)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920000801B1 (ko) * 1988-02-04 1992-01-23 이데미쯔세끼유가가꾸 가부시기가이샤 다이아몬드박막부착 초경합금의 제조방법
WO1989011556A1 (en) * 1988-05-28 1989-11-30 Sumitomo Electric Industries, Ltd. Process for vapor-phase synthesis of diamond
EP0374923B2 (en) * 1988-12-21 1999-06-23 Mitsubishi Materials Corporation Diamond-coated tool member, substrate thereof and method for producing same
US5258206A (en) * 1989-01-13 1993-11-02 Idemitsu Petrochemical Co., Ltd. Method and apparatus for producing diamond thin films
US4948629A (en) * 1989-02-10 1990-08-14 International Business Machines Corporation Deposition of diamond films
US4981717A (en) * 1989-02-24 1991-01-01 Mcdonnell Douglas Corporation Diamond like coating and method of forming
JP2730145B2 (ja) * 1989-03-07 1998-03-25 住友電気工業株式会社 単結晶ダイヤモンド層の形成法
US5510157A (en) * 1989-03-17 1996-04-23 Ishizuka Research Institute, Ltd. Method of producing diamond of controlled quality
US5882740A (en) * 1989-03-17 1999-03-16 Ishizuka Research Institute Ltd. Method of producing diamond of controlled quality and product produced thereby
GB8912498D0 (en) * 1989-05-31 1989-07-19 De Beers Ind Diamond Diamond growth
US5106452A (en) * 1989-06-05 1992-04-21 Semiconductor Energy Laboratory Co., Ltd. Method of depositing diamond and diamond light emitting device
US5540904A (en) * 1989-12-11 1996-07-30 General Electric Company Isotopically-pure carbon-12 or carbon-13 polycrystalline diamond possessing enhanced thermal conductivity
US6162412A (en) * 1990-08-03 2000-12-19 Sumitomo Electric Industries, Ltd. Chemical vapor deposition method of high quality diamond
EP0469626B1 (en) * 1990-08-03 1998-04-29 Sumitomo Electric Industries, Ltd. Chemical vapor deposition method of high quality diamond
US5082522A (en) * 1990-08-14 1992-01-21 Texas Instruments Incorporated Method for forming patterned diamond thin films
US5800879A (en) * 1991-05-16 1998-09-01 Us Navy Deposition of high quality diamond film on refractory nitride
CA2077773A1 (en) * 1991-10-25 1993-04-26 Thomas R. Anthony Microwave, rf, or ac/dc discharge assisted flame deposition of cvd diamond
US5415126A (en) * 1993-08-16 1995-05-16 Dow Corning Corporation Method of forming crystalline silicon carbide coatings at low temperatures
JPH07315989A (ja) * 1994-04-01 1995-12-05 Ngk Spark Plug Co Ltd ダイヤモンド被覆部材の製造方法
US5571615A (en) * 1995-05-16 1996-11-05 Xrystallume Ultrasmooth adherent diamond film coated article and method for making same
US5571616A (en) * 1995-05-16 1996-11-05 Crystallume Ultrasmooth adherent diamond film coated article and method for making same
EP0957511B1 (en) * 1996-02-23 2007-04-04 Ebara Corporation Chemical vapor deposition method
US5840427A (en) * 1996-05-21 1998-11-24 Teledyne Industries Incorporated Method for making corrosion resistant electrical components
DE19631407B4 (de) * 1996-08-05 2006-05-04 Unaxis Deutschland Holding Gmbh Vorrichtung zur plasmachemischen Abscheidung von polykristallinem Diamant
USH1792H (en) * 1997-07-14 1999-04-06 The United States Of America As Represented By The Secretary Of The Navy Selection of crystal orientation in diamond film chemical vapor deposition
DE10138693A1 (de) * 2001-08-07 2003-07-10 Schott Glas Vorrichtung zum Beschichten von Gegenständen
FR2849867B1 (fr) * 2003-01-10 2005-03-25 Centre Nat Rech Scient Croissance diamant a grande vitesse par plasma micro-onde en regime pulse.
US7547358B1 (en) * 2008-03-03 2009-06-16 Shapiro Zalman M System and method for diamond deposition using a liquid-solvent carbon-transfer mechanism
US8097218B1 (en) * 2008-09-17 2012-01-17 Thomas Manaugh System for generating electricity from alternative energy sources located on a floating platform
US8747963B2 (en) * 2009-01-23 2014-06-10 Lockheed Martin Corporation Apparatus and method for diamond film growth
EP2743273A1 (de) 2012-12-12 2014-06-18 Umicore AG & Co. KG Verfahren zur Herstellung wasserhaltiger Zubereitungen von Komplexen der Platingruppenmetalle

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA628567A (en) * 1961-10-03 G. Eversole William Synthesis of diamond
DE140985C (no) *
US3030187A (en) * 1958-07-23 1962-04-17 Union Carbide Corp Synthesis of diamond
US3030188A (en) * 1958-07-23 1962-04-17 Union Carbide Corp Synthesis of diamond
SU140985A1 (ru) * 1960-04-23 1960-11-30 П.Я. Глазунов Способ модификации поверхности минеральных тел
US3371996A (en) * 1964-01-20 1968-03-05 Henry J. Hibshman Diamond growth process
FR1456871A (fr) * 1965-09-15 1966-07-08 Mode d'obtention du diamant
US3911318A (en) * 1972-03-29 1975-10-07 Fusion Systems Corp Method and apparatus for generating electromagnetic radiation
US3911918A (en) * 1972-04-13 1975-10-14 Ralph D Turner Blood collection, storage and administering bag
US4020311A (en) * 1975-09-15 1977-04-26 Macmillan Bloedel Limited Microwave power applicator
PL106278B1 (pl) * 1976-07-27 1979-12-31 Politechnika Warszawska Sposob syntezy diamentow ze zjonizowanych gazowych zwiazkow wegla
SE412504B (sv) * 1977-04-07 1980-03-03 Inst For Mikrovagsteknik Vid T Sett och anordning for att medelst mikrovagsenergi astadkomma en i huvudsak likformig uppvermning
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US4434188A (en) * 1981-12-17 1984-02-28 National Institute For Researches In Inorganic Materials Method for synthesizing diamond
JPS5927754B2 (ja) * 1981-12-17 1984-07-07 科学技術庁無機材質研究所長 ダイヤモンドの合成法
JPS58135117A (ja) * 1982-01-29 1983-08-11 Natl Inst For Res In Inorg Mater ダイヤモンドの製造法
FR2524620A1 (fr) * 1982-04-02 1983-10-07 Vironneau Pierre Procede de revetement selectif d'un substrat par une couche de carbone absorbante de l'energie solaire irradiee
JPS5918197A (ja) * 1982-07-19 1984-01-30 Sumitomo Electric Ind Ltd ダイヤモンドの気相合成法
JPS5963732A (ja) * 1982-10-04 1984-04-11 Hitachi Ltd 薄膜形成装置
US4480164A (en) * 1982-12-03 1984-10-30 General Electric Company Food browning system incorporating a combined microwave and hot air oven
JPS59159167A (ja) * 1983-03-01 1984-09-08 Zenko Hirose アモルフアスシリコン膜の形成方法
JPS6054996A (ja) * 1983-09-07 1985-03-29 Natl Inst For Res In Inorg Mater ダイヤモンドの合成法
JPS60103099A (ja) * 1983-11-04 1985-06-07 Kyocera Corp ダイヤモンド膜の製造方法
JPS60191097A (ja) * 1984-03-08 1985-09-28 Mitsubishi Metal Corp 人工ダイヤモンドの析出生成方法
JPS6136200A (ja) * 1984-07-25 1986-02-20 Sumitomo Electric Ind Ltd ダイヤモンドの気相合成法
JPS61151097A (ja) * 1984-12-25 1986-07-09 Showa Denko Kk 平滑面をもつダイヤモンド薄膜の製法
JPS6244578A (ja) * 1985-08-21 1987-02-26 Canon Inc プラズマｃｖｄ法による堆積膜形成装置
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JPH0666268B2 (ja) * 1986-06-18 1994-08-24 日本電気株式会社 マイクロ波プラズマｃｖｄ装置
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JPS6424094A (en) * 1987-07-21 1989-01-26 Nat Inst Res Inorganic Mat Synthesizing apparatus for diamond
JPS6461396A (en) * 1987-09-01 1989-03-08 Idemitsu Petrochemical Co Synthesis of diamond and installation therefor

Also Published As

Publication number Publication date
NO881723D0 (no) 1988-04-21
EP0288065B1 (en) 1993-10-06
US4984534A (en) 1991-01-15
NO940494L (no) 1988-10-24
DE3884658D1 (de) 1993-11-11
KR880012481A (ko) 1988-11-26
DE3884658T2 (de) 1994-04-28
NO881723L (no) 1988-10-24
EP0288065A2 (en) 1988-10-26
CA1327772C (en) 1994-03-15
US4985227A (en) 1991-01-15
KR910008728B1 (ko) 1991-10-19
EP0288065A3 (en) 1989-02-15

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