KR880004134A - 인산염 코우팅 조성물과 아연-니켈 인산염 피막의 적용방법 - Google Patents

인산염 코우팅 조성물과 아연-니켈 인산염 피막의 적용방법 Download PDF

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KR880004134A
KR880004134A KR870010735A KR870010735A KR880004134A KR 880004134 A KR880004134 A KR 880004134A KR 870010735 A KR870010735 A KR 870010735A KR 870010735 A KR870010735 A KR 870010735A KR 880004134 A KR880004134 A KR 880004134A
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랜돌프 찰즈 해리
윌슨 케이프 토마스
리이 마일즈 도널드
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켐필 코오포레이션
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Abstract

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Description

인산염 피막 조성물과 아연-니켈 인산염 피막의 적용방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 해당하는 인산염욕내의 니켈농도와 인산염 피막의 니켈 함량을 관련시킨 표 Ⅳ로부터의 자료를 도표로 나타낸다. 두가지 유형의 인산염욕을 비교한다. 하나는 아연을 저함량으로 함유하며, 또다른 하나는 아연을 고함량으로 함유한다. 피막은 자동차 산업에서 몸체 패널(body panels)로 사용하는 바와 같은 강패널에 적용한다.
제2도는 열침지 아연도금패널에 적용했을 때 제1도에서와 같은 시험 자료를 도표로 나타낸다.

Claims (12)

  1. 알칼리 세척제로 기판의 표면을 세척하고, 티탄 함유수용액으로 기판의 표면을 상태조정하고, 인산염으로 존재하는 칼륨, 나트륨 및 암모늄 이온으로 이루어진 군으로부터 선택된 A4-40중량부: 아연 이온이고 농도가 약 300ppm-1,000ppm인 B2중량부: 니켈 또는, 니켈과 망간으로 이루어진 군으로부터 선택된 C1-10중량부의 비율로 조합된 근본적으로 성분 A,B 및 C 의 수용액으로 이루어진 용액으로 기판의 표면에 피막처리하고: 약 37.8℃(100°F)와 60℃(140°F)사이이 온도에서 30 내지 300초동안 기판의 표면에 상기 피막처리 조성물을 적용하고; 그리고 상기 기판을 헹구는 단계를 포함하는 강,아연-도금 강, 및 알루미늄으로 이루어진 군으로부터 선택된 금속 기판에 인산염 전환 피막 처리를 하는 방법.
  2. 제1항에 있어서, 상기 성분들이 A 약 8-20중량부: B2 중량부: C2-4중량부의 비율로 조합되고 B의 농도가 약 500-700ppm인 방법.
  3. 제1항에 있어서, 상기성분들이 A 약 10중량부: B2 중량부: C3 중량부의 비율로 조합되고 B의 농도가 약 500-700ppm인 방법.
  4. 알칼리 세척제로 기판을 세척하고, 제른스테드(Jern-sted)염의 수용액으로 기판의 표면을 상태조정하고; 약 300-1,000ppm의 아연 이온 농도, 약 600-20,000ppm의 알칼리 금속 인산염으로부터의 알칼리 금속 이온 농도와 약 150-5,000ppm의 니켈 이온 농도를 갖도록 하기 첫번째와 두번째 농축물을 수성욕에서 희석하여 피막처리 조성물을 제조하고;
    근본적으로 아래의 중량%로 이루어진 첫번째 농축물:
    근본적으로 아래의 중량%로 이루어진 두번째 농축물:
    약 37.8℃(100°F)와 60℃(140°F)사이의 온도에서 30 내지 300초동안 기판의 표면에 상기 피막처리조성물을 적용하고; 상기 기판을 헹구고; 기판에 크롬산염 헹굼액을 적용하고; 그리고 상기 기판을 물로 헹구는 단계를 포함하는 강, 아연-도금강 및 알루미늄으로 이루어진 군으로부터 선택된 기판을 피막처리하는 방법.
  5. 알칼리 세척제로 기판을 세척하고 제론스테드염의 수용액으로 기판의 표면을 상태조정하고; 약500-700ppm의 아연 이온 농도, 약 2000-7000ppm의 알칼리 금속 수산화물 이온 농도와 약 500-1,050ppm의 니켈 이온 농도를 갖도록 하기 첫번째와 두번째 농축물을 수성욕에 희석하여 피막 처리 조성물을 제조하고;
    근본적으로 아래의 중량%로 이루어진 첫번째 농축물:
    근본적으로 아래의 중량%로 이루어진 두번째 농축물:
    약 37.8℃(100°F)와 60℃(140°F)사이의 온도에서 30 내지 300초동안 기판의 표면에 상기 피막처리조성물을 적용하고; 상기 기판을 헹구고; 기판에 밀봉제 헹굼액을 적용하고; 그리고 상기 기판을 물로 헹구는 단계를 포함하는 강, 아연-도금강 및 알루미늄으로 이루어진 군으로부터 선택된 기판을 피막처리하는 방법.
  6. 알칼리 세척제로 기판을 세척하고; 제론스테드염의 수용액으로 기판의 표면을 상태조정하고; 약500-700ppm의 아연 이온 농도, 약 2000-7000ppm의 알칼리 금속 수산화물 이온 농도와 약 250-1,050ppm의 니켈 이온 농도를 갖도록 하기 첫번째와 두번째 농축물을 수성욕에서 희석하여 피막 처리 조성물을 제조하고;
    근본적으로 아래의 중량%로 이루어진 첫번째 농축물:
    근본적으로 아래의 중량%로 이루어진 두번째 농축물:
    약 37.8℃(100°F)와 60℃(140°F)사이의 온도에서 30 내지 300초동안 기판의 표면에 상기 피막처리조성물을 적용하고; 상기 기판을 헹구고; 기판에 크롬산염 헹굼액을 적용하고; 그리고 상기 기판을 물로 헹구는 단계를 포함하는 강, 아연-도금강 및 알루미늄으로 이루어진 군으로부터 선택된 기판을 피막처리하는 방법.
  7. 망간과 인산의 몰비가 0.001-0.388:1이고 질소함유환원제와 망간의 몰비가 최소 0.05:1이며 망간의 리터당 농도가 2.24몰/1보다 작으며, 근본적으로 이가 망간염, 인산 및 질소-함유 환원제로 이루어진 액체 농축 조성물.
  8. 제7항에 있어서, 상기 질소함유 환원제가 히드록실아민 설페이트인 액체 농축물.
  9. 제7항에 있어서, 상기 질소함유 환원제가 히드라진설페이트인 액체 농축물.
  10. 제7항에 있어서, 상기 질소함유 환원제가 아질산나트륨, 아질산칼륨 및 아질산 암모늄을 포함하는 군으로부터 선택된 액체 농축물.
  11. 제7항에 있어서, 상기 이가 망간염이 산화망간, 수산화망간 및 탄산 망간으로 이루어진 군으로부터 선택된 액체 농축 조성물.
  12. 상기 질소 함유 환원제가 용해될때까지 물, 인산 및 질소함유 환원제를 혼합하고; 질소함유 환원제와 망간의 몰비가 최소한 0.05:1이고 망간과 인산의 몰비가 0.388-0.001:1이 되도록 이가 망간염을 첨가하는 단계를 포함하는 망간 함유 인산처리 용액을 형성하기 위한 뒤이어 희석되는 액체 농축물의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870010735A 1986-09-26 1987-09-25 인산염 코우팅 조성물과 아연-니켈 인산염 코우팅의 적용 방법 KR910003722B1 (ko)

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US912754 1986-09-26
US06/912,754 US4793867A (en) 1986-09-26 1986-09-26 Phosphate coating composition and method of applying a zinc-nickel phosphate coating
US912,754 1986-09-26

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KR880004134A true KR880004134A (ko) 1988-06-01
KR910003722B1 KR910003722B1 (ko) 1991-06-08

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KR910003722B1 (ko) 1991-06-08
DE3789746D1 (de) 1994-06-09
US4793867A (en) 1988-12-27
EP0261597A3 (en) 1988-07-13
ES2056053T3 (es) 1994-10-01
DE3751666T2 (de) 1996-09-05
EP0448130B1 (en) 1996-01-03
DE3751666D1 (de) 1996-02-15
EP0448130A1 (en) 1991-09-25
MX170156B (es) 1993-08-10
CA1321532C (en) 1993-08-24
ES2084054T3 (es) 1996-05-01
JPS63166976A (ja) 1988-07-11
BR8704942A (pt) 1988-05-17
DE3789746T2 (de) 1994-12-01
EP0261597A2 (en) 1988-03-30
EP0261597B1 (en) 1994-05-04

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