KR20200044726A - 고평탄도, 저손상 빅직경의 단결정 탄화규소 기판 및 그 제조 방법 - Google Patents

고평탄도, 저손상 빅직경의 단결정 탄화규소 기판 및 그 제조 방법 Download PDF

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Publication number
KR20200044726A
KR20200044726A KR1020197037367A KR20197037367A KR20200044726A KR 20200044726 A KR20200044726 A KR 20200044726A KR 1020197037367 A KR1020197037367 A KR 1020197037367A KR 20197037367 A KR20197037367 A KR 20197037367A KR 20200044726 A KR20200044726 A KR 20200044726A
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South Korea
Prior art keywords
silicon carbide
single crystal
crystal silicon
abrasive
substrate
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Ceased
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KR1020197037367A
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English (en)
Korean (ko)
Inventor
칭루이 량
한관 왕
루이 왕
원링 스
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에스아이씨씨 컴퍼니 리미티드
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Priority claimed from CN201811205285.7A external-priority patent/CN109545680B/zh
Priority claimed from CN201811205291.2A external-priority patent/CN109321980B/zh
Application filed by 에스아이씨씨 컴퍼니 리미티드 filed Critical 에스아이씨씨 컴퍼니 리미티드
Priority to KR1020217027445A priority Critical patent/KR102471865B1/ko
Publication of KR20200044726A publication Critical patent/KR20200044726A/ko
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H01L21/02529—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H01L21/30625—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
KR1020197037367A 2018-10-16 2018-12-26 고평탄도, 저손상 빅직경의 단결정 탄화규소 기판 및 그 제조 방법 Ceased KR20200044726A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020217027445A KR102471865B1 (ko) 2018-10-16 2018-12-26 고평탄도, 저손상 빅직경의 단결정 탄화규소 기판 및 그 제조 방법

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
CN201811205285.7A CN109545680B (zh) 2018-10-16 2018-10-16 一种高平整度、低损伤单晶碳化硅衬底的快速制备方法
CN201811205291.2 2018-10-16
CN201811205285.7 2018-10-16
CN201811205291.2A CN109321980B (zh) 2018-10-16 2018-10-16 一种高平整度、低损伤大直径单晶碳化硅衬底
PCT/CN2018/123718 WO2020077849A1 (zh) 2018-10-16 2018-12-26 高平整度、低损伤大直径单晶碳化硅衬底及其制备方法

Related Child Applications (1)

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KR1020217027445A Division KR102471865B1 (ko) 2018-10-16 2018-12-26 고평탄도, 저손상 빅직경의 단결정 탄화규소 기판 및 그 제조 방법

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KR20200044726A true KR20200044726A (ko) 2020-04-29

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KR1020217027445A Active KR102471865B1 (ko) 2018-10-16 2018-12-26 고평탄도, 저손상 빅직경의 단결정 탄화규소 기판 및 그 제조 방법

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EP (1) EP3666937B1 (https=)
JP (1) JP7298915B2 (https=)
KR (2) KR20200044726A (https=)
TW (1) TWI748260B (https=)
WO (1) WO2020077849A1 (https=)

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CN114211389A (zh) * 2022-02-23 2022-03-22 北京通美晶体技术股份有限公司 一种磷化铟晶片及其制备方法
JP7268784B1 (ja) * 2022-05-31 2023-05-08 株式会社レゾナック ＳｉＣ基板及びＳｉＣエピタキシャルウェハ
JP7245586B1 (ja) * 2022-06-02 2023-03-24 株式会社レゾナック ｎ型ＳｉＣ単結晶基板
JP7217828B1 (ja) * 2022-06-02 2023-02-03 昭和電工株式会社 ＳｉＣ単結晶基板
CN115332052B (zh) * 2022-08-15 2026-03-27 福建晶安光电有限公司 可降低形变应力的衬底加工方法及衬底
FR3139409B1 (fr) * 2022-09-01 2024-08-23 Soitec Silicon On Insulator Procédé de préparation de la face avant d’une plaque de carbure de silicium polycristallin
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CN117304814B (zh) * 2023-11-29 2024-03-12 北京青禾晶元半导体科技有限责任公司 多晶碳化硅衬底抛光剂、抛光方法及多晶碳化硅衬底

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JP5233241B2 (ja) 2007-10-22 2013-07-10 株式会社デンソー 炭化珪素ウェハの製造方法
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JP7298915B2 (ja) 2023-06-27
EP3666937A4 (en) 2020-07-22
EP3666937C0 (en) 2023-07-05
KR20210109665A (ko) 2021-09-06
TWI748260B (zh) 2021-12-01
EP3666937A1 (en) 2020-06-17
WO2020077849A1 (zh) 2020-04-23
KR102471865B1 (ko) 2022-11-28
EP3666937B1 (en) 2023-07-05
JP2021503170A (ja) 2021-02-04
TW202028547A (zh) 2020-08-01

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