JP7298915B2 - 単結晶炭化ケイ素基板の製造方法 - Google Patents

単結晶炭化ケイ素基板の製造方法 Download PDF

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Publication number
JP7298915B2
JP7298915B2 JP2019571534A JP2019571534A JP7298915B2 JP 7298915 B2 JP7298915 B2 JP 7298915B2 JP 2019571534 A JP2019571534 A JP 2019571534A JP 2019571534 A JP2019571534 A JP 2019571534A JP 7298915 B2 JP7298915 B2 JP 7298915B2
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abrasive
silicon carbide
crystal silicon
grinding
single crystal
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Japanese (ja)
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JP2021503170A5 (https=
JP2021503170A (ja
Inventor
▲慶▼瑞 梁
含冠 王
瑞 王
文▲靈▼ ▲時▼
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SICC Co Ltd
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SICC Co Ltd
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Priority claimed from CN201811205285.7A external-priority patent/CN109545680B/zh
Priority claimed from CN201811205291.2A external-priority patent/CN109321980B/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
JP2019571534A 2018-10-16 2018-12-26 単結晶炭化ケイ素基板の製造方法 Active JP7298915B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
CN201811205285.7A CN109545680B (zh) 2018-10-16 2018-10-16 一种高平整度、低损伤单晶碳化硅衬底的快速制备方法
CN201811205291.2 2018-10-16
CN201811205285.7 2018-10-16
CN201811205291.2A CN109321980B (zh) 2018-10-16 2018-10-16 一种高平整度、低损伤大直径单晶碳化硅衬底
PCT/CN2018/123718 WO2020077849A1 (zh) 2018-10-16 2018-12-26 高平整度、低损伤大直径单晶碳化硅衬底及其制备方法

Publications (3)

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JP2021503170A JP2021503170A (ja) 2021-02-04
JP2021503170A5 JP2021503170A5 (https=) 2021-04-15
JP7298915B2 true JP7298915B2 (ja) 2023-06-27

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EP (1) EP3666937B1 (https=)
JP (1) JP7298915B2 (https=)
KR (2) KR20200044726A (https=)
TW (1) TWI748260B (https=)
WO (1) WO2020077849A1 (https=)

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JP7661771B2 (ja) * 2021-05-06 2025-04-15 住友電気工業株式会社 炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法
CN114211389A (zh) * 2022-02-23 2022-03-22 北京通美晶体技术股份有限公司 一种磷化铟晶片及其制备方法
JP7268784B1 (ja) * 2022-05-31 2023-05-08 株式会社レゾナック ＳｉＣ基板及びＳｉＣエピタキシャルウェハ
JP7245586B1 (ja) * 2022-06-02 2023-03-24 株式会社レゾナック ｎ型ＳｉＣ単結晶基板
JP7217828B1 (ja) * 2022-06-02 2023-02-03 昭和電工株式会社 ＳｉＣ単結晶基板
CN115332052B (zh) * 2022-08-15 2026-03-27 福建晶安光电有限公司 可降低形变应力的衬底加工方法及衬底
FR3139409B1 (fr) * 2022-09-01 2024-08-23 Soitec Silicon On Insulator Procédé de préparation de la face avant d’une plaque de carbure de silicium polycristallin
CN115343301B (zh) * 2022-10-20 2023-05-23 盛吉盛(宁波)半导体科技有限公司 一种非金属材料亚表面损伤深度的表征方法
CN115652432B (zh) * 2022-10-31 2025-12-19 山东天岳先进科技股份有限公司 一种碳化硅晶体、籽晶及衬底
JP2025054483A (ja) * 2023-09-26 2025-04-08 株式会社プロテリアル 炭化珪素単結晶の製造方法
CN117304814B (zh) * 2023-11-29 2024-03-12 北京青禾晶元半导体科技有限责任公司 多晶碳化硅衬底抛光剂、抛光方法及多晶碳化硅衬底

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JP2003220548A (ja) 2002-01-25 2003-08-05 Sumitomo Special Metals Co Ltd 固定砥粒ワイヤソーを用いた高硬度材料の切断方法および磁気ヘッド用セラミックス基板の製造方法
JP2009105127A (ja) 2007-10-22 2009-05-14 Denso Corp 炭化珪素ウェハの製造方法
JP2010167509A (ja) 2009-01-20 2010-08-05 Kanai Hiroaki 固定砥粒ソーワイヤ及び切断方法
JP2014168067A (ja) 2014-03-25 2014-09-11 Asahi Glass Co Ltd 非酸化物単結晶基板の研磨方法
JP2017152423A (ja) 2016-02-22 2017-08-31 住友電気工業株式会社 炭化珪素基板の製造方法、炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法

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EP3666937A4 (en) 2020-07-22
KR20200044726A (ko) 2020-04-29
EP3666937C0 (en) 2023-07-05
KR20210109665A (ko) 2021-09-06
TWI748260B (zh) 2021-12-01
EP3666937A1 (en) 2020-06-17
WO2020077849A1 (zh) 2020-04-23
KR102471865B1 (ko) 2022-11-28
EP3666937B1 (en) 2023-07-05
JP2021503170A (ja) 2021-02-04
TW202028547A (zh) 2020-08-01

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