CN103935990B - 基于聚焦离子束系统的He离子刻蚀制备石墨烯纳米带方法 - Google Patents
基于聚焦离子束系统的He离子刻蚀制备石墨烯纳米带方法 Download PDFInfo
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CN104465340A (zh) * | 2014-11-18 | 2015-03-25 | 江苏大学 | 一种调控石墨烯场效应晶体管磁滞行为的方法 |
CN105088350A (zh) * | 2015-08-17 | 2015-11-25 | 山东建筑大学 | 一种调控SiC基外延石墨烯电子带隙的方法 |
CN105668503B (zh) * | 2016-03-10 | 2017-05-31 | 北京大学 | 一种由金属辅助的二维材料纳米带的制备方法 |
CN105776198A (zh) * | 2016-04-28 | 2016-07-20 | 江南大学 | 一种精确减薄并获得高质量少层或单层石墨烯的方法 |
CN106082183A (zh) * | 2016-06-06 | 2016-11-09 | 江苏大学 | 一种基于氧原子掺杂可控调节石墨烯带隙的方法 |
CN106856164A (zh) * | 2016-12-29 | 2017-06-16 | 苏州纳维科技有限公司 | 外延用图形化衬底及其制作方法 |
EP3666937B1 (en) * | 2018-10-16 | 2023-07-05 | Sicc Co., Ltd. | High-flatness, low-damage and large-diameter monocrystalline silicon carbide substrate, and manufacturing method therefor |
CN118183717B (zh) * | 2024-05-20 | 2024-08-13 | 天津大学 | 一种石墨烯纳米带及其制备方法 |
CN118183718B (zh) * | 2024-05-20 | 2024-09-13 | 天津大学 | 一种石墨烯纳米带及其制备方法 |
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CN102243990A (zh) * | 2011-06-21 | 2011-11-16 | 中国科学院上海微系统与信息技术研究所 | 石墨烯纳米带的制备方法 |
CN102392225B (zh) * | 2011-07-22 | 2013-12-18 | 中国科学院上海微系统与信息技术研究所 | 一种在绝缘基底上制备石墨烯纳米带的方法 |
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