TWI748260B - 高平整度、低損傷大直徑單晶碳化矽基材及其製備方法 - Google Patents

高平整度、低損傷大直徑單晶碳化矽基材及其製備方法 Download PDF

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TWI748260B
TWI748260B TW108136950A TW108136950A TWI748260B TW I748260 B TWI748260 B TW I748260B TW 108136950 A TW108136950 A TW 108136950A TW 108136950 A TW108136950 A TW 108136950A TW I748260 B TWI748260 B TW I748260B
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silicon carbide
crystal silicon
single crystal
grinding
substrate
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TW108136950A
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English (en)
Chinese (zh)
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TW202028547A (zh
Inventor
梁慶瑞
宗豔民
王含冠
王瑞
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大陸商山東天岳先進科技股份有限公司
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Priority claimed from CN201811205285.7A external-priority patent/CN109545680B/zh
Priority claimed from CN201811205291.2A external-priority patent/CN109321980B/zh
Application filed by 大陸商山東天岳先進科技股份有限公司 filed Critical 大陸商山東天岳先進科技股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
TW108136950A 2018-10-16 2019-10-14 高平整度、低損傷大直徑單晶碳化矽基材及其製備方法 TWI748260B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CNCN201811205291.2 2018-10-16
CN201811205285.7A CN109545680B (zh) 2018-10-16 2018-10-16 一种高平整度、低损伤单晶碳化硅衬底的快速制备方法
CNCN201811205285.7 2018-10-16
CN201811205291.2A CN109321980B (zh) 2018-10-16 2018-10-16 一种高平整度、低损伤大直径单晶碳化硅衬底

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TW202028547A TW202028547A (zh) 2020-08-01
TWI748260B true TWI748260B (zh) 2021-12-01

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KR (2) KR20200044726A (https=)
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WO (1) WO2020077849A1 (https=)

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CN114211389A (zh) * 2022-02-23 2022-03-22 北京通美晶体技术股份有限公司 一种磷化铟晶片及其制备方法
JP7268784B1 (ja) * 2022-05-31 2023-05-08 株式会社レゾナック ＳｉＣ基板及びＳｉＣエピタキシャルウェハ
JP7245586B1 (ja) * 2022-06-02 2023-03-24 株式会社レゾナック ｎ型ＳｉＣ単結晶基板
JP7217828B1 (ja) * 2022-06-02 2023-02-03 昭和電工株式会社 ＳｉＣ単結晶基板
CN115332052B (zh) * 2022-08-15 2026-03-27 福建晶安光电有限公司 可降低形变应力的衬底加工方法及衬底
FR3139409B1 (fr) * 2022-09-01 2024-08-23 Soitec Silicon On Insulator Procédé de préparation de la face avant d’une plaque de carbure de silicium polycristallin
CN115343301B (zh) * 2022-10-20 2023-05-23 盛吉盛(宁波)半导体科技有限公司 一种非金属材料亚表面损伤深度的表征方法
CN115652432B (zh) * 2022-10-31 2025-12-19 山东天岳先进科技股份有限公司 一种碳化硅晶体、籽晶及衬底
JP2025054483A (ja) * 2023-09-26 2025-04-08 株式会社プロテリアル 炭化珪素単結晶の製造方法
CN117304814B (zh) * 2023-11-29 2024-03-12 北京青禾晶元半导体科技有限责任公司 多晶碳化硅衬底抛光剂、抛光方法及多晶碳化硅衬底

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EP3666937A4 (en) 2020-07-22
KR20200044726A (ko) 2020-04-29
EP3666937C0 (en) 2023-07-05
KR20210109665A (ko) 2021-09-06
EP3666937A1 (en) 2020-06-17
WO2020077849A1 (zh) 2020-04-23
KR102471865B1 (ko) 2022-11-28
EP3666937B1 (en) 2023-07-05
JP2021503170A (ja) 2021-02-04
TW202028547A (zh) 2020-08-01

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