CN103624675A - 一种获得低加工损伤的碳化硅衬底表面的加工方法 - Google Patents
一种获得低加工损伤的碳化硅衬底表面的加工方法 Download PDFInfo
- Publication number
- CN103624675A CN103624675A CN201310625942.4A CN201310625942A CN103624675A CN 103624675 A CN103624675 A CN 103624675A CN 201310625942 A CN201310625942 A CN 201310625942A CN 103624675 A CN103624675 A CN 103624675A
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- CN
- China
- Prior art keywords
- silicon carbide
- carbide substrates
- grinding
- abrasive
- machining damage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310625942.4A CN103624675B (zh) | 2013-11-29 | 2013-11-29 | 一种获得低加工损伤的碳化硅衬底表面的加工方法 |
Applications Claiming Priority (1)
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CN201310625942.4A CN103624675B (zh) | 2013-11-29 | 2013-11-29 | 一种获得低加工损伤的碳化硅衬底表面的加工方法 |
Publications (2)
Publication Number | Publication Date |
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CN103624675A true CN103624675A (zh) | 2014-03-12 |
CN103624675B CN103624675B (zh) | 2016-05-11 |
Family
ID=50206314
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CN201310625942.4A Active CN103624675B (zh) | 2013-11-29 | 2013-11-29 | 一种获得低加工损伤的碳化硅衬底表面的加工方法 |
Country Status (1)
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CN (1) | CN103624675B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105463405A (zh) * | 2014-08-15 | 2016-04-06 | 瑞科硅公司 | 用于形成用在流化床反应器中的碳化硅的高纯度硅 |
CN109545680A (zh) * | 2018-10-16 | 2019-03-29 | 山东天岳先进材料科技有限公司 | 一种高平整度、低损伤单晶碳化硅衬底的快速制备方法 |
CN112980391A (zh) * | 2021-03-02 | 2021-06-18 | 河北思瑞恩新材料科技有限公司 | 一种用于碳化硅晶片加工的粗磨液及其制备方法 |
TWI748260B (zh) * | 2018-10-16 | 2021-12-01 | 大陸商山東天岳先進科技股份有限公司 | 高平整度、低損傷大直徑單晶碳化矽基材及其製備方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US20050059247A1 (en) * | 2003-09-16 | 2005-03-17 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing SiC substrate |
CN102029573A (zh) * | 2009-10-07 | 2011-04-27 | 硅电子股份公司 | 用于研磨半导体晶片的方法 |
CN102528648A (zh) * | 2012-02-10 | 2012-07-04 | 安徽工业大学 | 一种用于固结磨料抛光垫的纳米金刚石-高分子复合磨料 |
CN103252708A (zh) * | 2013-05-29 | 2013-08-21 | 南京航空航天大学 | 基于固结磨料抛光垫的蓝宝石衬底的超精密加工方法 |
CN203171414U (zh) * | 2013-03-11 | 2013-09-04 | 中芯国际集成电路制造(北京)有限公司 | 固着磨料化学机械研磨设备 |
CN103381573A (zh) * | 2013-05-27 | 2013-11-06 | 河南科技学院 | 一种SiC单晶片研磨工序用固结磨料化学机械研磨盘 |
-
2013
- 2013-11-29 CN CN201310625942.4A patent/CN103624675B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050059247A1 (en) * | 2003-09-16 | 2005-03-17 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing SiC substrate |
CN102029573A (zh) * | 2009-10-07 | 2011-04-27 | 硅电子股份公司 | 用于研磨半导体晶片的方法 |
CN102528648A (zh) * | 2012-02-10 | 2012-07-04 | 安徽工业大学 | 一种用于固结磨料抛光垫的纳米金刚石-高分子复合磨料 |
CN203171414U (zh) * | 2013-03-11 | 2013-09-04 | 中芯国际集成电路制造(北京)有限公司 | 固着磨料化学机械研磨设备 |
CN103381573A (zh) * | 2013-05-27 | 2013-11-06 | 河南科技学院 | 一种SiC单晶片研磨工序用固结磨料化学机械研磨盘 |
CN103252708A (zh) * | 2013-05-29 | 2013-08-21 | 南京航空航天大学 | 基于固结磨料抛光垫的蓝宝石衬底的超精密加工方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105463405A (zh) * | 2014-08-15 | 2016-04-06 | 瑞科硅公司 | 用于形成用在流化床反应器中的碳化硅的高纯度硅 |
CN105463405B (zh) * | 2014-08-15 | 2020-08-04 | 陕西有色天宏瑞科硅材料有限责任公司 | 用于形成用在流化床反应器中的碳化硅的高纯度硅 |
CN109545680A (zh) * | 2018-10-16 | 2019-03-29 | 山东天岳先进材料科技有限公司 | 一种高平整度、低损伤单晶碳化硅衬底的快速制备方法 |
TWI748260B (zh) * | 2018-10-16 | 2021-12-01 | 大陸商山東天岳先進科技股份有限公司 | 高平整度、低損傷大直徑單晶碳化矽基材及其製備方法 |
CN112980391A (zh) * | 2021-03-02 | 2021-06-18 | 河北思瑞恩新材料科技有限公司 | 一种用于碳化硅晶片加工的粗磨液及其制备方法 |
Also Published As
Publication number | Publication date |
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CN103624675B (zh) | 2016-05-11 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Machining method for acquiring silicon carbide substrate surface small in machining damage Effective date of registration: 20160826 Granted publication date: 20160511 Pledgee: Chinese for key construction fund limited Pledgor: Hebei Tongguang Crystal Co., Ltd. Registration number: 2016990000669 |
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PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20201207 Granted publication date: 20160511 Pledgee: Chinese for key construction fund Ltd. Pledgor: HEBEI TONGGUANG CRYSTAL Co.,Ltd. Registration number: 2016990000669 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
CP03 | Change of name, title or address |
Address after: No. 6001, North Third Ring Road, Baoding City, Hebei Province, 071000 Patentee after: Hebei Tongguang Semiconductor Co.,Ltd. Address before: 071000 A007, 4th floor, block B, building 6, University Science Park, No. 5699, North 2nd Ring Road, Baoding City, Hebei Province Patentee before: HEBEI TONGGUANG CRYSTAL Co.,Ltd. |
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