CN100400234C - 大直径高硬度6H-SiC单晶片的表面抛光方法 - Google Patents
大直径高硬度6H-SiC单晶片的表面抛光方法 Download PDFInfo
- Publication number
- CN100400234C CN100400234C CNB2006100438168A CN200610043816A CN100400234C CN 100400234 C CN100400234 C CN 100400234C CN B2006100438168 A CNB2006100438168 A CN B2006100438168A CN 200610043816 A CN200610043816 A CN 200610043816A CN 100400234 C CN100400234 C CN 100400234C
- Authority
- CN
- China
- Prior art keywords
- polishing
- wafer
- silicon carbide
- rough
- oxidant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 130
- 238000000034 method Methods 0.000 title claims abstract description 34
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 33
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000000126 substance Substances 0.000 claims abstract description 9
- 230000003746 surface roughness Effects 0.000 claims abstract description 7
- 239000004744 fabric Substances 0.000 claims description 25
- 239000012530 fluid Substances 0.000 claims description 24
- 239000007800 oxidant agent Substances 0.000 claims description 21
- 230000001590 oxidative effect Effects 0.000 claims description 21
- 239000002270 dispersing agent Substances 0.000 claims description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000003344 environmental pollutant Substances 0.000 claims description 3
- 231100000252 nontoxic Toxicity 0.000 claims description 3
- 230000003000 nontoxic effect Effects 0.000 claims description 3
- 231100000719 pollutant Toxicity 0.000 claims description 3
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 3
- 239000007791 liquid phase Substances 0.000 claims description 2
- 239000002178 crystalline material Substances 0.000 abstract description 2
- 238000003486 chemical etching Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 27
- 239000000463 material Substances 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- 230000007812 deficiency Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229920002635 polyurethane Polymers 0.000 description 5
- 239000004814 polyurethane Substances 0.000 description 5
- 239000002649 leather substitute Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- 239000004115 Sodium Silicate Substances 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 description 2
- 235000019795 sodium metasilicate Nutrition 0.000 description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical group [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- 229910052911 sodium silicate Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 fragility is big Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006100438168A CN100400234C (zh) | 2006-04-19 | 2006-04-19 | 大直径高硬度6H-SiC单晶片的表面抛光方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006100438168A CN100400234C (zh) | 2006-04-19 | 2006-04-19 | 大直径高硬度6H-SiC单晶片的表面抛光方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1836842A CN1836842A (zh) | 2006-09-27 |
CN100400234C true CN100400234C (zh) | 2008-07-09 |
Family
ID=37014423
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100438168A Active CN100400234C (zh) | 2006-04-19 | 2006-04-19 | 大直径高硬度6H-SiC单晶片的表面抛光方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100400234C (zh) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2195139B1 (en) * | 2007-08-28 | 2014-11-12 | REM Technologies, Inc. | Method for inspecting and refurbishing engineering components |
CN100579723C (zh) * | 2008-03-21 | 2010-01-13 | 中国科学院上海光学精密机械研究所 | 激光玻璃机械化学抛光方法 |
CN101724344A (zh) * | 2008-10-14 | 2010-06-09 | 周海 | 碳化硅基片的抛光液 |
CN101671525B (zh) * | 2009-09-01 | 2013-04-10 | 湖南皓志新材料股份有限公司 | 一种改善稀土抛光粉悬浮性的方法 |
CN102107391B (zh) * | 2009-12-24 | 2014-01-15 | 北京天科合达蓝光半导体有限公司 | 一种SiC单晶晶片的加工方法 |
CN102214565B (zh) * | 2010-04-09 | 2012-10-03 | 中国科学院微电子研究所 | 一种对碳化硅晶片进行减薄的方法 |
CN102339744A (zh) * | 2010-07-23 | 2012-02-01 | 苏州普锐晶科技有限公司 | 一种超高频晶片的抛光方法 |
CN101934497A (zh) * | 2010-08-11 | 2011-01-05 | 中国电子科技集团公司第四十五研究所 | 硅片单面化学机械抛光方法和装置 |
CN101966689B (zh) * | 2010-09-27 | 2013-04-10 | 山东大学 | 一种大直径4H-SiC晶片碳面的表面抛光方法 |
CN102051677B (zh) * | 2010-11-12 | 2012-03-28 | 山东大学 | 在大直径6H-SiC碳面上生长石墨烯的方法 |
CN102543665B (zh) * | 2010-12-07 | 2014-01-01 | 中国科学院微电子研究所 | 砷化镓衬底改进的快速减薄方法 |
CN102543718A (zh) * | 2010-12-14 | 2012-07-04 | 北京天科合达蓝光半导体有限公司 | 一种降低碳化硅晶片翘曲度、弯曲度的方法 |
CN102198701B (zh) * | 2011-05-11 | 2014-05-14 | 山东大学 | 一种刻面碳化硅宝石成品的加工方法 |
CN102263024A (zh) * | 2011-07-18 | 2011-11-30 | 北京通美晶体技术有限公司 | 一种单面抛光晶片的背面防腐蚀方法 |
CN102427034B (zh) * | 2011-11-23 | 2013-08-07 | 中国科学院微电子研究所 | 一种对超薄厚度GaAs晶片进行镜面抛光减薄的方法 |
CN102709170A (zh) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | 用于少子寿命测量的硅片表面处理方法 |
CN103506928B (zh) * | 2012-06-19 | 2016-02-10 | 上海硅酸盐研究所中试基地 | 超硬半导体材料抛光方法 |
CN103934741B (zh) * | 2014-04-01 | 2016-08-17 | 壹埃光学(苏州)有限公司 | 表面粗糙度达到零点一纳米级的超光滑抛光工艺 |
CN105154968A (zh) * | 2015-06-18 | 2015-12-16 | 江苏苏创光学器材有限公司 | 蓝宝石led灯丝基板的制备方法 |
CN105140362A (zh) * | 2015-06-25 | 2015-12-09 | 江苏苏创光学器材有限公司 | 蓝宝石led灯丝基板的生产方法 |
CN105666300A (zh) * | 2016-02-02 | 2016-06-15 | 北京华进创威电子有限公司 | 一种碳化硅晶片的双面抛光方法 |
CN105734673A (zh) * | 2016-04-26 | 2016-07-06 | 北京世纪金光半导体有限公司 | 一种获得大尺寸碳化硅单晶片高加工精度的方法 |
CN106098868A (zh) * | 2016-07-06 | 2016-11-09 | 湘能华磊光电股份有限公司 | 一种led芯片的加工和清洗方法 |
CN106115612B (zh) * | 2016-07-11 | 2017-11-17 | 中国电子科技集团公司第四十五研究所 | 一种晶圆平坦化方法 |
CN106625202A (zh) * | 2016-11-02 | 2017-05-10 | 浙江蓝特光学股份有限公司 | 一种晶圆片的加工方法及其抛光夹具 |
CN106625204B (zh) * | 2017-01-06 | 2019-05-24 | 东莞市天域半导体科技有限公司 | 一种大尺寸SiC晶片的背面处理方法 |
CN106826408B (zh) * | 2017-02-09 | 2018-05-08 | 同济大学 | 一种基于晶体氧化剂的lbo晶体抛光方法 |
CN108161581A (zh) * | 2017-12-25 | 2018-06-15 | 大连三生科技发展有限公司 | 一种牙种植体表面抛光的方法 |
CN108949036B (zh) * | 2018-09-06 | 2021-01-05 | 北京保利世达科技有限公司 | 一种抛光液及对碳化硅晶体的抛光方法 |
CN109702639B (zh) * | 2019-01-02 | 2021-02-19 | 山东天岳先进科技股份有限公司 | 一种SiC单晶片磨抛方法 |
CN110539240A (zh) * | 2019-07-18 | 2019-12-06 | 浙江博蓝特半导体科技股份有限公司 | 一种碳化硅单晶衬底的加工方法 |
CN110890271A (zh) * | 2019-10-21 | 2020-03-17 | 江苏吉星新材料有限公司 | 一种碳化硅晶片的加工方法 |
CN110919467B (zh) * | 2019-12-24 | 2021-06-29 | 深圳佰维存储科技股份有限公司 | 晶圆抛光方法 |
CN111379009B (zh) * | 2020-04-30 | 2022-04-29 | 中国电子科技集团公司第五十五研究所 | 一种薄膜铌酸锂光波导芯片抛光装置的抛光方法 |
CN111558853A (zh) * | 2020-05-15 | 2020-08-21 | 南通大学 | 一种大尺寸超硬衬底片快速抛光方法 |
CN111748287A (zh) * | 2020-06-30 | 2020-10-09 | 中国科学院上海微系统与信息技术研究所 | 一种SiC晶圆抛光液及其制备方法和应用 |
CN111702565B (zh) * | 2020-07-03 | 2021-06-29 | 中国电子科技集团公司第九研究所 | 一种大尺寸铁氧体基片及其抛光方法 |
CN112077691B (zh) * | 2020-07-28 | 2022-07-22 | 武汉高芯科技有限公司 | 一种锑化镓单晶片的抛光方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5710566B2 (zh) * | 1978-06-01 | 1982-02-26 | ||
CN1428388A (zh) * | 2001-12-27 | 2003-07-09 | 拜尔公司 | 金属和金属/电介质结构的化学机械抛光用组合物 |
JP2004327952A (ja) * | 2003-03-03 | 2004-11-18 | Fujimi Inc | 研磨用組成物 |
-
2006
- 2006-04-19 CN CNB2006100438168A patent/CN100400234C/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5710566B2 (zh) * | 1978-06-01 | 1982-02-26 | ||
CN1428388A (zh) * | 2001-12-27 | 2003-07-09 | 拜尔公司 | 金属和金属/电介质结构的化学机械抛光用组合物 |
US20030157804A1 (en) * | 2001-12-27 | 2003-08-21 | Lothar Puppe | Composition for the chemical mechanical polishing of metal and metal/dielectric structures |
JP2004327952A (ja) * | 2003-03-03 | 2004-11-18 | Fujimi Inc | 研磨用組成物 |
Non-Patent Citations (4)
Title |
---|
SiC单晶片的超精密加工. 李娟,陈秀芳,马德营,姜守振,李现祥,王丽,董捷,胡小波,徐现刚,王继扬,蒋民华.功能材料,第37卷第1期. 2006 |
SiC单晶片的超精密加工. 李娟,陈秀芳,马德营,姜守振,李现祥,王丽,董捷,胡小波,徐现刚,王继扬,蒋民华.功能材料,第37卷第1期. 2006 * |
提高硅片抛光质量的分析研究. 刘玉岭.半导体技术,第3期. 1985 |
提高硅片抛光质量的分析研究. 刘玉岭.半导体技术,第3期. 1985 * |
Also Published As
Publication number | Publication date |
---|---|
CN1836842A (zh) | 2006-09-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100400234C (zh) | 大直径高硬度6H-SiC单晶片的表面抛光方法 | |
CN101966689B (zh) | 一种大直径4H-SiC晶片碳面的表面抛光方法 | |
Arif et al. | A state-of-the-art review of ductile cutting of silicon wafers for semiconductor and microelectronics industries | |
Hu et al. | Planarization machining of sapphire wafers with boron carbide and colloidal silica as abrasives | |
US8227350B2 (en) | Controlling diamond film surfaces and layering | |
CN103506928B (zh) | 超硬半导体材料抛光方法 | |
Deng et al. | Plasma-assisted polishing of gallium nitride to obtain a pit-free and atomically flat surface | |
CN101920477B (zh) | 半导体晶片的生产方法和处理方法 | |
Huo et al. | Nanogrinding of SiC wafers with high flatness and low subsurface damage | |
Yiqing et al. | The double-side lapping of SiC wafers with semifixed abrasives and resin–combined plates | |
CN100496893C (zh) | 用于在sic薄膜上外延生长适用表面的处理的方法 | |
NIU et al. | Method of surface treatment on sapphire substrate | |
TW200411754A (en) | A method of polishing a wafer of material | |
CN113089093B (zh) | 金刚石半导体结构的形成方法 | |
An et al. | Effect of process parameters on material removal rate in chemical mechanical polishing of 6H-SiC (0001) | |
Ji et al. | A general strategy for polishing SiC wafers to atomic smoothness with arbitrary facets | |
Le et al. | Polishing-induced material attrition in surface-texturing AlN using a nanoscale polishing tool: An atomic-scale understanding | |
KR101267982B1 (ko) | 반도체 기판의 연마방법 및 반도체 기판의 연마장치 | |
Huaiyue et al. | Chemical mechanical polishing of freestanding GaN substrates | |
Suyang et al. | Study on the influence of ambient temperature on surface/subsurface damage of monocrystalline germanium lapping wafer | |
Wang et al. | Generation and removal of pits during chemical mechanical polishing process for MgO single crystal substrate | |
Zhou et al. | Analysis of the grinding characteristics of β-Ga2O3 crystal on different planes | |
Lee et al. | Experimental analysis on CMP mechanism of single crystal SiC | |
Zhou et al. | Molecular dynamics study on sub-nanoscale removal mechanism of 3C-SIC in a fixed abrasive polishing | |
Kuo et al. | Augmented CMP techniques for silicon carbide |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHANDONG TIANYUE ADVANCED MATERIALS TECHNOLOGY CO. Free format text: FORMER OWNER: SHANDONG UNIVERSITY Effective date: 20120131 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 250100 JINAN, SHANDONG PROVINCE TO: 250101 JINAN, SHANDONG PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20120131 Address after: Xinluo Avenue high tech Zone of Ji'nan City, Shandong province 250101 silver bearing No. 2008 building 3 storey block C room 304 Patentee after: Shandong Tianyue Advanced Material Technology Co., Ltd. Address before: Licheng Alexander Road in Ji'nan City, Shandong province 250100 No. 27 Patentee before: Shandong University |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Surface polishing method for large diameter and high hardness 6H-SiC single crystal chip Effective date of registration: 20160505 Granted publication date: 20080709 Pledgee: China Everbright Bank Ji'nan branch Pledgor: Shandong Tianyue Advanced Material Technology Co., Ltd. Registration number: 2016990000354 |
|
PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20201119 Granted publication date: 20080709 Pledgee: China Everbright Bank Ji'nan branch Pledgor: Shandong Tianyue Advanced Materials Technology Co.,Ltd. Registration number: 2016990000354 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
CP03 | Change of name, title or address |
Address after: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue advanced technology Co., Ltd Address before: Room 304, 3 / F, block C, Yinhe building, 2008 Xinluo street, hi tech Zone, Jinan City, Shandong Province Patentee before: Shandong Tianyue Advanced Materials Technology Co.,Ltd. |
|
CP03 | Change of name, title or address |