KR20190032414A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20190032414A
KR20190032414A KR1020197003827A KR20197003827A KR20190032414A KR 20190032414 A KR20190032414 A KR 20190032414A KR 1020197003827 A KR1020197003827 A KR 1020197003827A KR 20197003827 A KR20197003827 A KR 20197003827A KR 20190032414 A KR20190032414 A KR 20190032414A
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South Korea
Prior art keywords
insulator
oxide
transistor
barrier layer
film
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KR1020197003827A
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English (en)
Korean (ko)
Inventor
야스마사 야마네
모토무 구라타
료타 호도
다카히사 이시야마
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Priority to KR1020227018347A priority Critical patent/KR102613288B1/ko
Publication of KR20190032414A publication Critical patent/KR20190032414A/ko
Ceased legal-status Critical Current

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    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H01L27/1052—
    • H01L27/1207—
    • H01L27/1225—
    • H01L27/1248—
    • H01L27/1255—
    • H01L29/4908—
    • H01L29/513—
    • H01L29/66969—
    • H01L29/78648—
    • H01L29/78696—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
KR1020197003827A 2016-07-26 2017-07-13 반도체 장치 Ceased KR20190032414A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020227018347A KR102613288B1 (ko) 2016-07-26 2017-07-13 반도체 장치

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2016-146342 2016-07-26
JP2016146342 2016-07-26
JP2017026908 2017-02-16
JPJP-P-2017-026908 2017-02-16
PCT/IB2017/054229 WO2018020350A1 (en) 2016-07-26 2017-07-13 Semiconductor device

Related Child Applications (1)

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Publications (1)

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KR20190032414A true KR20190032414A (ko) 2019-03-27

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Country Status (6)

Country Link
US (1) US10236390B2 (https=)
JP (1) JP6995523B2 (https=)
KR (2) KR20190032414A (https=)
CN (2) CN109478514A (https=)
TW (1) TWI731121B (https=)
WO (1) WO2018020350A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11362034B2 (en) 2018-04-04 2022-06-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a laminate contact plug of specified configuration including a conductive metal oxide layer

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI737665B (zh) * 2016-07-01 2021-09-01 日商半導體能源硏究所股份有限公司 半導體裝置以及半導體裝置的製造方法
CN109478514A (zh) * 2016-07-26 2019-03-15 株式会社半导体能源研究所 半导体装置
WO2019092541A1 (ja) * 2017-11-09 2019-05-16 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US11245040B2 (en) 2018-03-02 2022-02-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US20210242207A1 (en) * 2018-05-18 2021-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
JP2020047732A (ja) * 2018-09-18 2020-03-26 キオクシア株式会社 磁気記憶装置
WO2020084415A1 (ja) 2018-10-26 2020-04-30 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US11211461B2 (en) * 2018-12-28 2021-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
US11289475B2 (en) * 2019-01-25 2022-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
JP7315661B2 (ja) * 2019-04-12 2023-07-26 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP7550759B2 (ja) 2019-07-12 2024-09-13 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US11349023B2 (en) * 2019-10-01 2022-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Integration of p-channel and n-channel E-FET III-V devices without parasitic channels
KR102819716B1 (ko) * 2020-06-12 2025-06-13 삼성전자주식회사 3차원 반도체 장치 및 반도체 장치의 제조방법
JP7744260B2 (ja) * 2022-02-15 2025-09-25 キオクシア株式会社 半導体装置
US20250324726A1 (en) * 2022-06-17 2025-10-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and storage device
JPWO2024154036A1 (https=) * 2023-01-20 2024-07-25

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007096055A (ja) 2005-09-29 2007-04-12 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法
JP2007123861A (ja) 2005-09-29 2007-05-17 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2011119674A (ja) 2009-10-30 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW237562B (https=) 1990-11-09 1995-01-01 Semiconductor Energy Res Co Ltd
TW345695B (en) 1997-07-17 1998-11-21 United Microelectronics Corp Process for producing gate oxide layer
US6348709B1 (en) * 1999-03-15 2002-02-19 Micron Technology, Inc. Electrical contact for high dielectric constant capacitors and method for fabricating the same
US7314785B2 (en) 2003-10-24 2008-01-01 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US7888702B2 (en) 2005-04-15 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the display device
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
US7524713B2 (en) 2005-11-09 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5280716B2 (ja) * 2007-06-11 2013-09-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR102104986B1 (ko) 2009-02-06 2020-04-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 구동 방법
KR101804589B1 (ko) * 2009-12-11 2018-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011145538A1 (en) * 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101938726B1 (ko) 2010-06-11 2019-01-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101809105B1 (ko) 2010-08-06 2017-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
KR101426515B1 (ko) 2010-09-15 2014-08-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 표시 장치
US8883556B2 (en) 2010-12-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6104522B2 (ja) 2011-06-10 2017-03-29 株式会社半導体エネルギー研究所 半導体装置
KR20140101817A (ko) * 2011-12-02 2014-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8916424B2 (en) * 2012-02-07 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8901556B2 (en) * 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
US9219164B2 (en) 2012-04-20 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor channel
KR102113160B1 (ko) 2012-06-15 2020-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9190525B2 (en) 2012-07-06 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer
KR102171650B1 (ko) 2012-08-10 2020-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
TWI761605B (zh) * 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP6283191B2 (ja) 2012-10-17 2018-02-21 株式会社半導体エネルギー研究所 半導体装置
KR102436895B1 (ko) 2013-10-22 2022-08-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
KR102244460B1 (ko) * 2013-10-22 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2015128151A (ja) * 2013-11-29 2015-07-09 株式会社半導体エネルギー研究所 半導体装置及び表示装置
KR20240042562A (ko) * 2013-12-26 2024-04-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6402017B2 (ja) 2013-12-26 2018-10-10 株式会社半導体エネルギー研究所 半導体装置
KR102529174B1 (ko) * 2013-12-27 2023-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6506961B2 (ja) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 液晶表示装置
US9577110B2 (en) 2013-12-27 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor and the display device including the semiconductor device
TWI665778B (zh) * 2014-02-05 2019-07-11 日商半導體能源研究所股份有限公司 半導體裝置、模組及電子裝置
US9443872B2 (en) 2014-03-07 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10361290B2 (en) 2014-03-14 2019-07-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising adding oxygen to buffer film and insulating film
KR102212267B1 (ko) * 2014-03-19 2021-02-04 삼성전자주식회사 반도체 장치 및 그 제조 방법
JPWO2015151337A1 (ja) 2014-03-31 2017-04-13 株式会社東芝 薄膜トランジスタ、半導体装置及び薄膜トランジスタの製造方法
TWI772799B (zh) 2014-05-09 2022-08-01 日商半導體能源研究所股份有限公司 半導體裝置
KR102437450B1 (ko) 2014-06-13 2022-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치를 포함하는 전자 기기
US9455337B2 (en) 2014-06-18 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9461179B2 (en) 2014-07-11 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor device (TFT) comprising stacked oxide semiconductor layers and having a surrounded channel structure
JP2016072498A (ja) * 2014-09-30 2016-05-09 株式会社東芝 半導体装置
US10460984B2 (en) 2015-04-15 2019-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating electrode and semiconductor device
KR102549926B1 (ko) 2015-05-04 2023-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 반도체 장치의 제작 방법, 및 전자기기
WO2017081579A1 (en) 2015-11-13 2017-05-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6887243B2 (ja) 2015-12-11 2021-06-16 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、電子機器及び半導ウエハ
US9917207B2 (en) * 2015-12-25 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6845692B2 (ja) 2016-01-15 2021-03-24 株式会社半導体エネルギー研究所 半導体装置
US10431583B2 (en) * 2016-02-11 2019-10-01 Samsung Electronics Co., Ltd. Semiconductor device including transistors with adjusted threshold voltages
KR102628719B1 (ko) 2016-02-12 2024-01-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US10741587B2 (en) 2016-03-11 2020-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method the same
US10032918B2 (en) * 2016-04-22 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN109478514A (zh) * 2016-07-26 2019-03-15 株式会社半导体能源研究所 半导体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007096055A (ja) 2005-09-29 2007-04-12 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法
JP2007123861A (ja) 2005-09-29 2007-05-17 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2011119674A (ja) 2009-10-30 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11362034B2 (en) 2018-04-04 2022-06-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a laminate contact plug of specified configuration including a conductive metal oxide layer

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WO2018020350A1 (en) 2018-02-01
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US10236390B2 (en) 2019-03-19
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