KR20150033690A - 안티퓨즈를 특징으로 하는 집적 회로 디바이스 및 이를 제조하는 방법 - Google Patents

안티퓨즈를 특징으로 하는 집적 회로 디바이스 및 이를 제조하는 방법 Download PDF

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Publication number
KR20150033690A
KR20150033690A KR1020157002134A KR20157002134A KR20150033690A KR 20150033690 A KR20150033690 A KR 20150033690A KR 1020157002134 A KR1020157002134 A KR 1020157002134A KR 20157002134 A KR20157002134 A KR 20157002134A KR 20150033690 A KR20150033690 A KR 20150033690A
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South Korea
Prior art keywords
integrated circuit
fuse
dielectric
source
conductor
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Ceased
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KR1020157002134A
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English (en)
Korean (ko)
Inventor
총제 왕
존 지안홍 추
시아 리
Original Assignee
퀄컴 인코포레이티드
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Publication of KR20150033690A publication Critical patent/KR20150033690A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/60—Peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H10D1/474—Resistors having no potential barriers comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
KR1020157002134A 2012-06-29 2013-06-27 안티퓨즈를 특징으로 하는 집적 회로 디바이스 및 이를 제조하는 방법 Ceased KR20150033690A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261666649P 2012-06-29 2012-06-29
US61/666,649 2012-06-29
US13/684,107 2012-11-21
US13/684,107 US9502424B2 (en) 2012-06-29 2012-11-21 Integrated circuit device featuring an antifuse and method of making same
PCT/US2013/048088 WO2014004770A2 (en) 2012-06-29 2013-06-27 Integrated circuit device featuring an antifuse and method of making same

Publications (1)

Publication Number Publication Date
KR20150033690A true KR20150033690A (ko) 2015-04-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157002134A Ceased KR20150033690A (ko) 2012-06-29 2013-06-27 안티퓨즈를 특징으로 하는 집적 회로 디바이스 및 이를 제조하는 방법

Country Status (6)

Country Link
US (1) US9502424B2 (enExample)
EP (1) EP2867922A2 (enExample)
JP (1) JP2015525969A (enExample)
KR (1) KR20150033690A (enExample)
CN (1) CN104396014B (enExample)
WO (1) WO2014004770A2 (enExample)

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KR20180085421A (ko) * 2017-01-18 2018-07-27 삼성디스플레이 주식회사 데이터 보정 장치 및 이를 포함하는 표시 장치
KR20190137004A (ko) * 2018-05-31 2019-12-10 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 이퓨즈
KR20200026404A (ko) * 2018-08-31 2020-03-11 삼성전자주식회사 반도체 소자
US12165865B2 (en) 2018-05-31 2024-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Efuse with fuse walls and method of manufacturing the same
TWI895741B (zh) * 2022-08-10 2025-09-01 台灣積體電路製造股份有限公司 半導體裝置、記憶體裝置、和用於製造記憶體裝置的方法

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US9876123B2 (en) * 2014-07-16 2018-01-23 Qualcomm Incorporated Non-volatile one-time programmable memory device
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US9496048B2 (en) * 2015-03-12 2016-11-15 Qualcomm Incorporated Differential one-time-programmable (OTP) memory array
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TWI764371B (zh) * 2019-12-31 2022-05-11 台灣積體電路製造股份有限公司 積體電路元件、生成積體電路佈局圖的方法以及電子設計自動化系統
TWI734452B (zh) * 2020-04-23 2021-07-21 友達光電股份有限公司 記憶體裝置以及寫入方法
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US11670587B2 (en) * 2021-04-16 2023-06-06 Nanya Technology Corporation Semiconductor device with copper-manganese liner and method for forming the same
CN115224034B (zh) * 2021-04-16 2025-09-09 联华电子股份有限公司 一次性可编程存储器结构
CN116113238A (zh) 2021-09-16 2023-05-12 联华电子股份有限公司 半导体存储器结构及其制作方法
KR102753760B1 (ko) * 2022-06-24 2025-01-14 창신 메모리 테크놀로지즈 아이엔씨 반도체 구조 및 제조 방법, 메모리 및 동작 방법
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KR20190137004A (ko) * 2018-05-31 2019-12-10 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 이퓨즈
US10923483B2 (en) 2018-05-31 2021-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. EFuse
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US12165865B2 (en) 2018-05-31 2024-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Efuse with fuse walls and method of manufacturing the same
KR20200026404A (ko) * 2018-08-31 2020-03-11 삼성전자주식회사 반도체 소자
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Also Published As

Publication number Publication date
CN104396014A (zh) 2015-03-04
US20140001568A1 (en) 2014-01-02
EP2867922A2 (en) 2015-05-06
WO2014004770A2 (en) 2014-01-03
CN104396014B (zh) 2018-10-09
WO2014004770A3 (en) 2014-03-27
JP2015525969A (ja) 2015-09-07
US9502424B2 (en) 2016-11-22

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