CN104396014B - 以反熔丝为特征的集成电路器件及其制造方法 - Google Patents
以反熔丝为特征的集成电路器件及其制造方法 Download PDFInfo
- Publication number
- CN104396014B CN104396014B CN201380034473.7A CN201380034473A CN104396014B CN 104396014 B CN104396014 B CN 104396014B CN 201380034473 A CN201380034473 A CN 201380034473A CN 104396014 B CN104396014 B CN 104396014B
- Authority
- CN
- China
- Prior art keywords
- antifuse
- electrode
- integrated circuit
- dielectric
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
- H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
- G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/60—Peripheral circuit regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/47—Resistors having no potential barriers
- H10D1/474—Resistors having no potential barriers comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261666649P | 2012-06-29 | 2012-06-29 | |
| US61/666,649 | 2012-06-29 | ||
| US13/684,107 | 2012-11-21 | ||
| US13/684,107 US9502424B2 (en) | 2012-06-29 | 2012-11-21 | Integrated circuit device featuring an antifuse and method of making same |
| PCT/US2013/048088 WO2014004770A2 (en) | 2012-06-29 | 2013-06-27 | Integrated circuit device featuring an antifuse and method of making same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104396014A CN104396014A (zh) | 2015-03-04 |
| CN104396014B true CN104396014B (zh) | 2018-10-09 |
Family
ID=49777221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380034473.7A Active CN104396014B (zh) | 2012-06-29 | 2013-06-27 | 以反熔丝为特征的集成电路器件及其制造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9502424B2 (enExample) |
| EP (1) | EP2867922A2 (enExample) |
| JP (1) | JP2015525969A (enExample) |
| KR (1) | KR20150033690A (enExample) |
| CN (1) | CN104396014B (enExample) |
| WO (1) | WO2014004770A2 (enExample) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9842802B2 (en) | 2012-06-29 | 2017-12-12 | Qualcomm Incorporated | Integrated circuit device featuring an antifuse and method of making same |
| US20150129975A1 (en) | 2013-11-13 | 2015-05-14 | Globalfoundries Singapore Pte. Ltd. | Multi-time programmable device |
| KR102204054B1 (ko) * | 2014-03-24 | 2021-01-18 | 인텔 코포레이션 | 스페이서 브레이크다운을 이용한 안티퓨즈 요소 |
| US20150279479A1 (en) * | 2014-04-01 | 2015-10-01 | Qualcomm Incorporated | Anti-fuse one-time programmable resistive random access memories |
| US9876123B2 (en) * | 2014-07-16 | 2018-01-23 | Qualcomm Incorporated | Non-volatile one-time programmable memory device |
| US20160093672A1 (en) * | 2014-09-26 | 2016-03-31 | Qualcomm Incorporated | Logic high-k/metal gate 1t-1c rram mtp/otp devices |
| US9496048B2 (en) * | 2015-03-12 | 2016-11-15 | Qualcomm Incorporated | Differential one-time-programmable (OTP) memory array |
| US9865601B2 (en) * | 2015-12-16 | 2018-01-09 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor integrated circuit |
| US9852988B2 (en) | 2015-12-18 | 2017-12-26 | Invensas Bonding Technologies, Inc. | Increased contact alignment tolerance for direct bonding |
| US9837168B1 (en) * | 2016-09-15 | 2017-12-05 | Globalfoundries Inc. | Word line voltage generator for programmable memory array |
| US10446487B2 (en) | 2016-09-30 | 2019-10-15 | Invensas Bonding Technologies, Inc. | Interface structures and methods for forming same |
| US10580735B2 (en) | 2016-10-07 | 2020-03-03 | Xcelsis Corporation | Stacked IC structure with system level wiring on multiple sides of the IC die |
| FR3058567B1 (fr) * | 2016-11-08 | 2019-01-25 | Stmicroelectronics (Rousset) Sas | Circuit integre comportant une structure antifusible, et procede de realisation |
| KR102184449B1 (ko) | 2016-11-09 | 2020-12-01 | 삼성전자주식회사 | 반도체 소자 |
| KR20190092584A (ko) | 2016-12-29 | 2019-08-07 | 인벤사스 본딩 테크놀로지스 인코포레이티드 | 집적된 수동 컴포넌트를 구비한 접합된 구조체 |
| US10276909B2 (en) | 2016-12-30 | 2019-04-30 | Invensas Bonding Technologies, Inc. | Structure comprising at least a first element bonded to a carrier having a closed metallic channel waveguide formed therein |
| KR102592928B1 (ko) * | 2017-01-18 | 2023-10-24 | 삼성디스플레이 주식회사 | 데이터 보정 장치 및 이를 포함하는 표시 장치 |
| US10629577B2 (en) | 2017-03-16 | 2020-04-21 | Invensas Corporation | Direct-bonded LED arrays and applications |
| WO2018183739A1 (en) | 2017-03-31 | 2018-10-04 | Invensas Bonding Technologies, Inc. | Interface structures and methods for forming same |
| US9953990B1 (en) * | 2017-08-01 | 2018-04-24 | Synopsys, Inc. | One-time programmable memory using rupturing of gate insulation |
| US10566253B2 (en) * | 2017-11-30 | 2020-02-18 | Nanya Technology Corporation | Electronic device and electrical testing method thereof |
| US11169326B2 (en) | 2018-02-26 | 2021-11-09 | Invensas Bonding Technologies, Inc. | Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects |
| US11256004B2 (en) | 2018-03-20 | 2022-02-22 | Invensas Bonding Technologies, Inc. | Direct-bonded lamination for improved image clarity in optical devices |
| DE102019109087A1 (de) | 2018-05-31 | 2019-12-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Elektrische sicherung |
| US10923483B2 (en) | 2018-05-31 | 2021-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | EFuse |
| US11515291B2 (en) | 2018-08-28 | 2022-11-29 | Adeia Semiconductor Inc. | Integrated voltage regulator and passive components |
| US11031407B2 (en) * | 2018-08-30 | 2021-06-08 | Taiwan Semiconductor Manufacturing Company Ltd. | Anti-fuse device, circuit, methods, and layout |
| WO2020042078A1 (zh) * | 2018-08-30 | 2020-03-05 | 深圳市为通博科技有限责任公司 | 存储单元、存储器件以及存储单元的操作方法 |
| KR102609372B1 (ko) | 2018-08-31 | 2023-12-06 | 삼성전자주식회사 | 반도체 소자 |
| US10763269B2 (en) * | 2018-10-28 | 2020-09-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Anti-fuse cell and chip having anti-fuse cells |
| US11456303B2 (en) * | 2018-12-27 | 2022-09-27 | Nanya Technology Corporation | Fuse array structure |
| US11901281B2 (en) | 2019-03-11 | 2024-02-13 | Adeia Semiconductor Bonding Technologies Inc. | Bonded structures with integrated passive component |
| US11094701B2 (en) * | 2019-07-17 | 2021-08-17 | Taiwan Semiconductor Manufacturing Company Ltd. | Layout structure of storage cell and method thereof |
| US11762200B2 (en) | 2019-12-17 | 2023-09-19 | Adeia Semiconductor Bonding Technologies Inc. | Bonded optical devices |
| TWI764371B (zh) * | 2019-12-31 | 2022-05-11 | 台灣積體電路製造股份有限公司 | 積體電路元件、生成積體電路佈局圖的方法以及電子設計自動化系統 |
| TWI734452B (zh) * | 2020-04-23 | 2021-07-21 | 友達光電股份有限公司 | 記憶體裝置以及寫入方法 |
| US11094388B1 (en) * | 2020-07-20 | 2021-08-17 | Winbond Electronics Corp. | Anti-fuse device and program method using the same |
| US11282960B2 (en) * | 2020-08-04 | 2022-03-22 | Nanya Technology Corporation | Semiconductor device with programmable element and method for fabricating the same |
| US11799001B2 (en) * | 2021-03-09 | 2023-10-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Back-end-of-line devices |
| US11670587B2 (en) * | 2021-04-16 | 2023-06-06 | Nanya Technology Corporation | Semiconductor device with copper-manganese liner and method for forming the same |
| CN115224034B (zh) * | 2021-04-16 | 2025-09-09 | 联华电子股份有限公司 | 一次性可编程存储器结构 |
| CN116113238A (zh) | 2021-09-16 | 2023-05-12 | 联华电子股份有限公司 | 半导体存储器结构及其制作方法 |
| KR102753760B1 (ko) * | 2022-06-24 | 2025-01-14 | 창신 메모리 테크놀로지즈 아이엔씨 | 반도체 구조 및 제조 방법, 메모리 및 동작 방법 |
| CN115148703A (zh) * | 2022-06-29 | 2022-10-04 | 上海集成电路装备材料产业创新中心有限公司 | 互连结构及其制备方法 |
| US12406741B2 (en) * | 2022-08-10 | 2025-09-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor memory devices with backside heater structure |
| CN117794234A (zh) * | 2022-09-21 | 2024-03-29 | 长鑫存储技术有限公司 | 半导体结构及其形成方法 |
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| US20040087098A1 (en) * | 2002-11-01 | 2004-05-06 | Chartered Semiconductor Manufacturing Ltd. | Mim and metal resistor formation at cu beol using only one extra mask |
| US20060097325A1 (en) * | 2004-11-09 | 2006-05-11 | Ching-Sung Yang | One-time programmable read only memory and operating method thereof |
| CN101180684A (zh) * | 2005-05-24 | 2008-05-14 | Nxp股份有限公司 | 反熔丝存储装置 |
| CN101621034A (zh) * | 2008-07-02 | 2010-01-06 | 旺宏电子股份有限公司 | 半导体装置的数据元件及其制造方法 |
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| US6794726B2 (en) | 2002-04-17 | 2004-09-21 | International Business Machines Corporation | MOS antifuse with low post-program resistance |
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| JP5666078B2 (ja) * | 2007-07-27 | 2015-02-12 | ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． | アンチヒューズ素子及びこれを有する半導体装置 |
| JP5245324B2 (ja) * | 2007-08-20 | 2013-07-24 | 日本電気株式会社 | スイッチ素子を搭載した半導体装置 |
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| JP2009206490A (ja) | 2008-01-30 | 2009-09-10 | Elpida Memory Inc | 半導体装置及びその製造方法 |
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| KR20100055823A (ko) * | 2008-11-18 | 2010-05-27 | 주식회사 동부하이텍 | 안티 퓨즈를 구비하는 반도체 소자 및 그 제조 방법 |
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| JP2011187472A (ja) | 2010-03-04 | 2011-09-22 | Elpida Memory Inc | 半導体装置 |
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| US20120061796A1 (en) | 2010-09-14 | 2012-03-15 | Power Gold LLC | Programmable anti-fuse wire bond pads |
| US9842802B2 (en) | 2012-06-29 | 2017-12-12 | Qualcomm Incorporated | Integrated circuit device featuring an antifuse and method of making same |
| US8975724B2 (en) | 2012-09-13 | 2015-03-10 | Qualcomm Incorporated | Anti-fuse device |
-
2012
- 2012-11-21 US US13/684,107 patent/US9502424B2/en not_active Expired - Fee Related
-
2013
- 2013-06-27 CN CN201380034473.7A patent/CN104396014B/zh active Active
- 2013-06-27 JP JP2015520484A patent/JP2015525969A/ja not_active Ceased
- 2013-06-27 WO PCT/US2013/048088 patent/WO2014004770A2/en not_active Ceased
- 2013-06-27 EP EP13735171.4A patent/EP2867922A2/en not_active Ceased
- 2013-06-27 KR KR1020157002134A patent/KR20150033690A/ko not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040087098A1 (en) * | 2002-11-01 | 2004-05-06 | Chartered Semiconductor Manufacturing Ltd. | Mim and metal resistor formation at cu beol using only one extra mask |
| US20060097325A1 (en) * | 2004-11-09 | 2006-05-11 | Ching-Sung Yang | One-time programmable read only memory and operating method thereof |
| CN101180684A (zh) * | 2005-05-24 | 2008-05-14 | Nxp股份有限公司 | 反熔丝存储装置 |
| CN101621034A (zh) * | 2008-07-02 | 2010-01-06 | 旺宏电子股份有限公司 | 半导体装置的数据元件及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104396014A (zh) | 2015-03-04 |
| KR20150033690A (ko) | 2015-04-01 |
| US20140001568A1 (en) | 2014-01-02 |
| EP2867922A2 (en) | 2015-05-06 |
| WO2014004770A2 (en) | 2014-01-03 |
| WO2014004770A3 (en) | 2014-03-27 |
| JP2015525969A (ja) | 2015-09-07 |
| US9502424B2 (en) | 2016-11-22 |
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