KR20140117285A - 반도체 장치의 제조 방법 및 반도체 장치 - Google Patents

반도체 장치의 제조 방법 및 반도체 장치 Download PDF

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Publication number
KR20140117285A
KR20140117285A KR20140032580A KR20140032580A KR20140117285A KR 20140117285 A KR20140117285 A KR 20140117285A KR 20140032580 A KR20140032580 A KR 20140032580A KR 20140032580 A KR20140032580 A KR 20140032580A KR 20140117285 A KR20140117285 A KR 20140117285A
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South Korea
Prior art keywords
semiconductor chip
chip
alignment mark
main surface
semiconductor
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Abandoned
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KR20140032580A
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English (en)
Korean (ko)
Inventor
노부히로 기노시따
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르네사스 일렉트로닉스 가부시키가이샤
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Publication of KR20140117285A publication Critical patent/KR20140117285A/ko
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/5442—Marks applied to semiconductor devices or parts comprising non digital, non alphanumeric information, e.g. symbols
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06548—Conductive via connections through the substrate, container, or encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06582—Housing for the assembly, e.g. chip scale package [CSP]
    • H01L2225/06586—Housing with external bump or bump-like connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15172—Fan-out arrangement of the internal vias
    • H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR20140032580A 2013-03-22 2014-03-20 반도체 장치의 제조 방법 및 반도체 장치 Abandoned KR20140117285A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-061087 2013-03-22
JP2013061087A JP6207190B2 (ja) 2013-03-22 2013-03-22 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
KR20140117285A true KR20140117285A (ko) 2014-10-07

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KR20140032580A Abandoned KR20140117285A (ko) 2013-03-22 2014-03-20 반도체 장치의 제조 방법 및 반도체 장치

Country Status (5)

Country Link
US (2) US9117826B2 (enExample)
JP (1) JP6207190B2 (enExample)
KR (1) KR20140117285A (enExample)
CN (1) CN104064479B (enExample)
TW (1) TWI596714B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
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KR20190079788A (ko) * 2017-12-28 2019-07-08 삼성전자주식회사 팬-아웃 반도체 패키지
KR20200020563A (ko) * 2018-08-16 2020-02-26 삼성전자주식회사 수동부품 내장기판
US10998247B2 (en) 2018-08-16 2021-05-04 Samsung Electronics Co., Ltd. Board with embedded passive component
US11021634B2 (en) 2015-09-23 2021-06-01 Lg Chem, Ltd. Adhesive film, preparation method of semiconductor device, and semiconductor device

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JP5876000B2 (ja) * 2012-06-11 2016-03-02 株式会社新川 ボンディング装置およびボンディング方法
KR102149150B1 (ko) * 2013-10-21 2020-08-28 삼성전자주식회사 전자 장치
JP6363854B2 (ja) * 2014-03-11 2018-07-25 キヤノン株式会社 形成方法、および物品の製造方法
TWI566305B (zh) * 2014-10-29 2017-01-11 巨擘科技股份有限公司 製造三維積體電路的方法
US9953963B2 (en) * 2015-11-06 2018-04-24 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit process having alignment marks for underfill
DE102018133319A1 (de) * 2018-12-21 2020-06-25 Rittal Gmbh & Co. Kg Verfahren zur robotergestützten Verdrahtung von elektrischen Komponenten einer auf einer Montageplatte angeordneten elektrischen Schaltanlage
JP7120521B2 (ja) * 2018-12-25 2022-08-17 住友電工デバイス・イノベーション株式会社 電子部品の製造方法及び半導体装置の製造方法
US11430909B2 (en) * 2019-07-31 2022-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. BSI chip with backside alignment mark
KR102728190B1 (ko) * 2019-09-10 2024-11-08 삼성전자주식회사 Pop 형태의 반도체 패키지
KR102739235B1 (ko) * 2019-09-24 2024-12-05 삼성전자주식회사 반도체 패키지
KR102766659B1 (ko) 2020-05-20 2025-02-12 에스케이하이닉스 주식회사 코어 다이가 제어 다이에 스택된 스택 패키지
CN113889420B (zh) * 2020-07-03 2025-05-02 联华电子股份有限公司 半导体元件结构及接合二基板的方法
KR102822141B1 (ko) 2021-09-24 2025-06-18 삼성전자주식회사 정렬 검사용 광학 어셈블리, 이를 포함한 광학 장치, 다이 본딩 시스템 및 이를 이용한 다이 본딩 방법
CN118676109B (zh) * 2024-08-21 2024-11-19 芯爱科技(南京)有限公司 封装基板及其制法

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11021634B2 (en) 2015-09-23 2021-06-01 Lg Chem, Ltd. Adhesive film, preparation method of semiconductor device, and semiconductor device
KR20190079788A (ko) * 2017-12-28 2019-07-08 삼성전자주식회사 팬-아웃 반도체 패키지
US10347584B1 (en) 2017-12-28 2019-07-09 Samsung Electro-Mechanics Co., Ltd. Fan-out semiconductor package
KR20200020563A (ko) * 2018-08-16 2020-02-26 삼성전자주식회사 수동부품 내장기판
US10998247B2 (en) 2018-08-16 2021-05-04 Samsung Electronics Co., Ltd. Board with embedded passive component

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US20140284780A1 (en) 2014-09-25
HK1198562A1 (en) 2015-05-15
TW201445681A (zh) 2014-12-01
TWI596714B (zh) 2017-08-21
CN104064479B (zh) 2018-05-15
US9117826B2 (en) 2015-08-25
JP2014187184A (ja) 2014-10-02
JP6207190B2 (ja) 2017-10-04
US20150325528A1 (en) 2015-11-12
CN104064479A (zh) 2014-09-24

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