KR20140048231A - 결정을 성장시키기 위한 도가니 - Google Patents
결정을 성장시키기 위한 도가니 Download PDFInfo
- Publication number
- KR20140048231A KR20140048231A KR1020147002892A KR20147002892A KR20140048231A KR 20140048231 A KR20140048231 A KR 20140048231A KR 1020147002892 A KR1020147002892 A KR 1020147002892A KR 20147002892 A KR20147002892 A KR 20147002892A KR 20140048231 A KR20140048231 A KR 20140048231A
- Authority
- KR
- South Korea
- Prior art keywords
- crucible
- base
- inner lining
- sapphire single
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 92
- 239000000463 material Substances 0.000 claims abstract description 53
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 48
- 239000010980 sapphire Substances 0.000 claims abstract description 48
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 22
- 239000000956 alloy Substances 0.000 claims abstract description 22
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 16
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 16
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 32
- 239000011888 foil Substances 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 239000000155 melt Substances 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims description 4
- 238000007711 solidification Methods 0.000 claims description 4
- 230000008023 solidification Effects 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000002844 melting Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 5
- 238000003825 pressing Methods 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910000691 Re alloy Inorganic materials 0.000 description 3
- 238000004049 embossing Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000004663 powder metallurgy Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000013441 quality evaluation Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ATGM445/2011 | 2011-08-05 | ||
| ATGM445/2011U AT12783U1 (de) | 2011-08-05 | 2011-08-05 | Tiegel zur kristallzucht |
| PCT/AT2012/000206 WO2013020153A1 (de) | 2011-08-05 | 2012-08-03 | Tiegel zur kristallzucht |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20140048231A true KR20140048231A (ko) | 2014-04-23 |
Family
ID=47221804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020147002892A Withdrawn KR20140048231A (ko) | 2011-08-05 | 2012-08-03 | 결정을 성장시키기 위한 도가니 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20140174341A1 (enExample) |
| JP (1) | JP5964963B2 (enExample) |
| KR (1) | KR20140048231A (enExample) |
| AT (1) | AT12783U1 (enExample) |
| WO (1) | WO2013020153A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013155540A1 (de) * | 2012-04-17 | 2013-10-24 | Plansee Se | Tiegel zur herstellung von oxidkeramischen einkristallen |
| CN103266294A (zh) * | 2013-03-07 | 2013-08-28 | 贵阳嘉瑜光电科技咨询中心 | 一种在hem晶体生长中重复使用钼坩埚的方法 |
| KR101547329B1 (ko) * | 2013-03-21 | 2015-08-25 | 주식회사 사파이어테크놀로지 | 사파이어 단결정 성장장치 및 성장방법 |
| WO2015099010A1 (ja) * | 2013-12-26 | 2015-07-02 | 株式会社アライドマテリアル | サファイア単結晶育成用坩堝、サファイア単結晶育成方法およびサファイア単結晶育成用坩堝の製造方法 |
| EP2902534A1 (en) | 2014-02-04 | 2015-08-05 | SGL Carbon SE | Metal coated crucible for sapphire single crystal growth |
| AT14854U1 (de) | 2015-07-03 | 2016-07-15 | Plansee Se | Behälter aus Refraktärmetall |
| CN112281214A (zh) * | 2020-10-29 | 2021-01-29 | 山东大学 | 一种基于双坩埚法生长稀土倍半氧化物晶体的方法和装置 |
| CN115111914B (zh) * | 2022-07-04 | 2023-09-15 | 泰州市万鑫钨钼制品有限公司 | 一种便于清洁的钼坩埚 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60170230A (ja) * | 1984-02-14 | 1985-09-03 | Sharp Corp | 化合物半導体製造装置 |
| JP2528285B2 (ja) * | 1986-05-27 | 1996-08-28 | 東洋炭素株式会社 | 黒鉛ルツボの保護方法 |
| JPS6393855A (ja) * | 1986-10-07 | 1988-04-25 | Mitsubishi Electric Corp | 蒸着装置 |
| JPH0293063A (ja) * | 1988-09-30 | 1990-04-03 | Mitsubishi Heavy Ind Ltd | 真空蒸発装置用るつぼ |
| DE19702465A1 (de) * | 1997-01-24 | 1998-07-30 | Heraeus Gmbh W C | Tiegel zur Einkristall-Züchtung, Verfahren zu seiner Herstellung und seine Verwendung |
| JPH11278992A (ja) * | 1998-03-27 | 1999-10-12 | Komatsu Electronic Metals Co Ltd | 単結晶シリコン引上げ方法、引上げ装置および黒鉛るつぼならびに石英るつぼ |
| CH693746A5 (de) * | 1999-05-04 | 2004-01-15 | Satis Vacuum Ind Vetriebs Ag | Elektronenstrahlverdampfer fuer Vacuum-Beschichtungsanlagen. |
| JP3023788B1 (ja) * | 1999-05-10 | 2000-03-21 | 株式会社藤森技術研究所 | 単結晶半導体の製造装置における内槽ルツボの分離方法及びその分離部材 |
| US6533993B2 (en) * | 2001-05-31 | 2003-03-18 | Fireline, Inc. | Variable height liner system |
| US20030213575A1 (en) * | 2002-05-14 | 2003-11-20 | Todaro Thomas J. | Melting crucible and method |
| DE102008008993A1 (de) * | 2008-02-13 | 2009-08-20 | Ald Vacuum Technologies Gmbh | Vorrichtung zum Schmelzen insbesondere von Metallen |
| CN101323985B (zh) * | 2008-07-25 | 2010-04-21 | 哈尔滨工业大学 | 一种大尺寸高熔点晶体生长用的筒形隔热屏 |
| DE102008060520A1 (de) * | 2008-12-04 | 2010-06-10 | Schott Ag | Ein Tiegel zur Prozessierung hochschmelzender Materialien |
| TWI519685B (zh) * | 2009-07-22 | 2016-02-01 | 國立大學法人信州大學 | 藍寶石單結晶之製造方法以及藍寶石單結晶之製造裝置 |
| JP5359845B2 (ja) * | 2009-12-15 | 2013-12-04 | 富士電機株式会社 | 単結晶成長装置 |
| DE102010048297B4 (de) * | 2010-10-14 | 2016-07-21 | Schott Ag | Vorrichtung zum Läutern einer anorganischen nichtmetallischen Schmelze und Verfahren zur Herstellung eines Glases und/oder einer Glaskeramik |
-
2011
- 2011-08-05 AT ATGM445/2011U patent/AT12783U1/de not_active IP Right Cessation
-
2012
- 2012-08-03 KR KR1020147002892A patent/KR20140048231A/ko not_active Withdrawn
- 2012-08-03 US US14/237,267 patent/US20140174341A1/en not_active Abandoned
- 2012-08-03 WO PCT/AT2012/000206 patent/WO2013020153A1/de not_active Ceased
- 2012-08-03 JP JP2014523142A patent/JP5964963B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP5964963B2 (ja) | 2016-08-03 |
| WO2013020153A1 (de) | 2013-02-14 |
| JP2014521585A (ja) | 2014-08-28 |
| AT12783U1 (de) | 2012-11-15 |
| US20140174341A1 (en) | 2014-06-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20140048231A (ko) | 결정을 성장시키기 위한 도가니 | |
| JP5170127B2 (ja) | ＳｉＣ単結晶の製造方法 | |
| JP5304600B2 (ja) | ＳｉＣ単結晶の製造装置及び製造方法 | |
| JP4831128B2 (ja) | 結晶成長用坩堝 | |
| WO2010008209A3 (ko) | 수직구조 반도체 발광소자 제조용 지지기판 및 이를 이용한 수직구조 반도체 발광소자 | |
| CN102177271A (zh) | 蒸发材料及蒸发材料的制造方法 | |
| FR2940327A1 (fr) | Four de fusion-solidification comportant une modulation des echanges thermiques par les parois laterales | |
| JP2014521585A5 (enExample) | ||
| JP5012655B2 (ja) | 単結晶成長装置 | |
| JP2012522710A (ja) | 半導体製造のために適したシリコンを製造するための坩堝 | |
| CN113195800A (zh) | 单晶生长用坩埚、单晶制造方法及单晶 | |
| JP2014529571A (ja) | 不均一な熱耐性を有するるつぼから結晶性材料を製造する装置 | |
| JP2012197190A (ja) | 自立基板の製造方法、ＡｌＮ自立基板及びＩＩＩ族窒化物半導体デバイス | |
| JP2015189616A (ja) | サファイア単結晶の製造方法 | |
| JP2012158520A (ja) | 単結晶成長装置 | |
| JP2009051700A (ja) | 炭化珪素単結晶の製造方法 | |
| Wisniewski et al. | Macroscopic glass-permeated single-crystals of fresnoite | |
| JP2016043377A (ja) | Ｃｕ−Ｇａ合金の連続鋳造方法 | |
| JP2015140291A (ja) | サファイア単結晶育成用坩堝およびこの坩堝を用いたサファイア単結晶の製造方法 | |
| JP6060755B2 (ja) | サファイア単結晶育成用坩堝およびその製造方法 | |
| JP2011246296A (ja) | 筒状シリコン結晶体製造方法及びその製造方法で製造される筒状シリコン結晶体 | |
| JP5314710B2 (ja) | 窒化アルミニウム製造方法 | |
| WO2018079192A1 (ja) | １３族元素窒化物層、複合基板および機能素子 | |
| RU2015141124A (ru) | Способ изготовления композитной структуры | |
| KR101683646B1 (ko) | 사파이어 단결정 성장용 도가니 및 이를 이용한 단결정 성장장치 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20140204 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |