JP5964963B2 - 結晶成長用のるつぼ - Google Patents

結晶成長用のるつぼ Download PDF

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Publication number
JP5964963B2
JP5964963B2 JP2014523142A JP2014523142A JP5964963B2 JP 5964963 B2 JP5964963 B2 JP 5964963B2 JP 2014523142 A JP2014523142 A JP 2014523142A JP 2014523142 A JP2014523142 A JP 2014523142A JP 5964963 B2 JP5964963 B2 JP 5964963B2
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JP
Japan
Prior art keywords
crucible
inner lining
single crystal
basic
sapphire single
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JP2014523142A
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English (en)
Japanese (ja)
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JP2014521585A (ja
JP2014521585A5 (enExample
Inventor
クラインパス、ベルント
ヴァルザー、ヘルマン
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Plansee SE
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Plansee SE
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2014523142A 2011-08-05 2012-08-03 結晶成長用のるつぼ Expired - Fee Related JP5964963B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ATGM445/2011 2011-08-05
ATGM445/2011U AT12783U1 (de) 2011-08-05 2011-08-05 Tiegel zur kristallzucht
PCT/AT2012/000206 WO2013020153A1 (de) 2011-08-05 2012-08-03 Tiegel zur kristallzucht

Publications (3)

Publication Number Publication Date
JP2014521585A JP2014521585A (ja) 2014-08-28
JP2014521585A5 JP2014521585A5 (enExample) 2015-07-16
JP5964963B2 true JP5964963B2 (ja) 2016-08-03

Family

ID=47221804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014523142A Expired - Fee Related JP5964963B2 (ja) 2011-08-05 2012-08-03 結晶成長用のるつぼ

Country Status (5)

Country Link
US (1) US20140174341A1 (enExample)
JP (1) JP5964963B2 (enExample)
KR (1) KR20140048231A (enExample)
AT (1) AT12783U1 (enExample)
WO (1) WO2013020153A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013155540A1 (de) * 2012-04-17 2013-10-24 Plansee Se Tiegel zur herstellung von oxidkeramischen einkristallen
CN103266294A (zh) * 2013-03-07 2013-08-28 贵阳嘉瑜光电科技咨询中心 一种在hem晶体生长中重复使用钼坩埚的方法
KR101547329B1 (ko) * 2013-03-21 2015-08-25 주식회사 사파이어테크놀로지 사파이어 단결정 성장장치 및 성장방법
WO2015099010A1 (ja) * 2013-12-26 2015-07-02 株式会社アライドマテリアル サファイア単結晶育成用坩堝、サファイア単結晶育成方法およびサファイア単結晶育成用坩堝の製造方法
EP2902534A1 (en) 2014-02-04 2015-08-05 SGL Carbon SE Metal coated crucible for sapphire single crystal growth
AT14854U1 (de) 2015-07-03 2016-07-15 Plansee Se Behälter aus Refraktärmetall
CN112281214A (zh) * 2020-10-29 2021-01-29 山东大学 一种基于双坩埚法生长稀土倍半氧化物晶体的方法和装置
CN115111914B (zh) * 2022-07-04 2023-09-15 泰州市万鑫钨钼制品有限公司 一种便于清洁的钼坩埚

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60170230A (ja) * 1984-02-14 1985-09-03 Sharp Corp 化合物半導体製造装置
JP2528285B2 (ja) * 1986-05-27 1996-08-28 東洋炭素株式会社 黒鉛ルツボの保護方法
JPS6393855A (ja) * 1986-10-07 1988-04-25 Mitsubishi Electric Corp 蒸着装置
JPH0293063A (ja) * 1988-09-30 1990-04-03 Mitsubishi Heavy Ind Ltd 真空蒸発装置用るつぼ
DE19702465A1 (de) * 1997-01-24 1998-07-30 Heraeus Gmbh W C Tiegel zur Einkristall-Züchtung, Verfahren zu seiner Herstellung und seine Verwendung
JPH11278992A (ja) * 1998-03-27 1999-10-12 Komatsu Electronic Metals Co Ltd 単結晶シリコン引上げ方法、引上げ装置および黒鉛るつぼならびに石英るつぼ
CH693746A5 (de) * 1999-05-04 2004-01-15 Satis Vacuum Ind Vetriebs Ag Elektronenstrahlverdampfer fuer Vacuum-Beschichtungsanlagen.
JP3023788B1 (ja) * 1999-05-10 2000-03-21 株式会社藤森技術研究所 単結晶半導体の製造装置における内槽ルツボの分離方法及びその分離部材
US6533993B2 (en) * 2001-05-31 2003-03-18 Fireline, Inc. Variable height liner system
US20030213575A1 (en) * 2002-05-14 2003-11-20 Todaro Thomas J. Melting crucible and method
DE102008008993A1 (de) * 2008-02-13 2009-08-20 Ald Vacuum Technologies Gmbh Vorrichtung zum Schmelzen insbesondere von Metallen
CN101323985B (zh) * 2008-07-25 2010-04-21 哈尔滨工业大学 一种大尺寸高熔点晶体生长用的筒形隔热屏
DE102008060520A1 (de) * 2008-12-04 2010-06-10 Schott Ag Ein Tiegel zur Prozessierung hochschmelzender Materialien
TWI519685B (zh) * 2009-07-22 2016-02-01 國立大學法人信州大學 藍寶石單結晶之製造方法以及藍寶石單結晶之製造裝置
JP5359845B2 (ja) * 2009-12-15 2013-12-04 富士電機株式会社 単結晶成長装置
DE102010048297B4 (de) * 2010-10-14 2016-07-21 Schott Ag Vorrichtung zum Läutern einer anorganischen nichtmetallischen Schmelze und Verfahren zur Herstellung eines Glases und/oder einer Glaskeramik

Also Published As

Publication number Publication date
WO2013020153A1 (de) 2013-02-14
JP2014521585A (ja) 2014-08-28
AT12783U1 (de) 2012-11-15
KR20140048231A (ko) 2014-04-23
US20140174341A1 (en) 2014-06-26

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