WO2010008209A3 - 수직구조 반도체 발광소자 제조용 지지기판 및 이를 이용한 수직구조 반도체 발광소자 - Google Patents

수직구조 반도체 발광소자 제조용 지지기판 및 이를 이용한 수직구조 반도체 발광소자 Download PDF

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Publication number
WO2010008209A3
WO2010008209A3 PCT/KR2009/003905 KR2009003905W WO2010008209A3 WO 2010008209 A3 WO2010008209 A3 WO 2010008209A3 KR 2009003905 W KR2009003905 W KR 2009003905W WO 2010008209 A3 WO2010008209 A3 WO 2010008209A3
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WO
WIPO (PCT)
Prior art keywords
emitting element
semiconductor light
supporting substrate
vertically structured
structured semiconductor
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PCT/KR2009/003905
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English (en)
French (fr)
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WO2010008209A2 (ko
Inventor
성태연
Original Assignee
고려대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 고려대학교 산학협력단 filed Critical 고려대학교 산학협력단
Priority to JP2011518649A priority Critical patent/JP5305364B2/ja
Priority to US13/054,472 priority patent/US8946745B2/en
Priority to EP09798112.0A priority patent/EP2315268B1/en
Priority to CN2009801288297A priority patent/CN102099934B/zh
Priority to EP16191592.1A priority patent/EP3136457B1/en
Publication of WO2010008209A2 publication Critical patent/WO2010008209A2/ko
Publication of WO2010008209A3 publication Critical patent/WO2010008209A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

반도체 발광소자 제조시 사파이어 기판으로부터 분리되는 그룹 3-5족 질화물계 반도체로 구성된 다층발광구조체 박막의 손상을 최소화시키고, 그 결과 반도체 발광소자의 전체적인 성능이 향상될 수 있는 수직구조 반도체 발광소자 제조용 지지기판 및 이를 이용한 수직구조 반도체 발광소자에 대하여 개시한다. 본 발명에 따른 수직구조 반도체 발광소자 제조용 지지기판은 그룹 3-5족 질화물계 반도체로 구성되는 다층발광구조체 박막이 적층되는 사파이어 기판과의 열팽창 계수 차이가 5ppm 이하인 물질로 이루어진 선택지지기판; 상기 선택지지기판 상에 형성되는 희생층(sacrificial layer); 상기 희생층의 상부에 형성되는 금속후막(thick metal film); 및 상기 금속후막의 상부에 형성되며, 솔더링(soldering) 또는 브레이징(brazing) 합금 물질로 이루어진 본딩층을 구비하여 이루어진다.
PCT/KR2009/003905 2008-07-15 2009-07-15 수직구조 반도체 발광소자 제조용 지지기판 및 이를 이용한 수직구조 반도체 발광소자 WO2010008209A2 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011518649A JP5305364B2 (ja) 2008-07-15 2009-07-15 垂直構造半導体発光素子の製造方法
US13/054,472 US8946745B2 (en) 2008-07-15 2009-07-15 Supporting substrate for manufacturing vertically-structured semiconductor light-emitting device and semiconductor light-emitting device using the supporting substrate
EP09798112.0A EP2315268B1 (en) 2008-07-15 2009-07-15 Vertically structured semiconductor light-emitting device
CN2009801288297A CN102099934B (zh) 2008-07-15 2009-07-15 用于制造垂直构造的半导体发光装置的支撑衬底以及使用该支撑衬底的半导体发光装置
EP16191592.1A EP3136457B1 (en) 2008-07-15 2009-07-15 Light emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080068536A KR20100008123A (ko) 2008-07-15 2008-07-15 이중 히트 씽크층으로 구성된 지지대를 갖춘 고성능수직구조의 반도체 발광소자
KR10-2008-0068536 2008-07-15

Publications (2)

Publication Number Publication Date
WO2010008209A2 WO2010008209A2 (ko) 2010-01-21
WO2010008209A3 true WO2010008209A3 (ko) 2010-05-14

Family

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Family Applications (1)

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PCT/KR2009/003905 WO2010008209A2 (ko) 2008-07-15 2009-07-15 수직구조 반도체 발광소자 제조용 지지기판 및 이를 이용한 수직구조 반도체 발광소자

Country Status (6)

Country Link
US (1) US8946745B2 (ko)
EP (4) EP3136457B1 (ko)
JP (2) JP5305364B2 (ko)
KR (1) KR20100008123A (ko)
CN (1) CN102099934B (ko)
WO (1) WO2010008209A2 (ko)

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JP2005236304A (ja) * 2004-02-20 2005-09-02 Shogen Koden Kofun Yugenkoshi 垂直構造を有する有機接着発光素子

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JP2011528500A (ja) 2011-11-17
EP2333846A3 (en) 2014-03-12
CN102099934B (zh) 2013-06-05
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EP2315268A4 (en) 2014-03-12
EP2315268A2 (en) 2011-04-27
KR20100008123A (ko) 2010-01-25
CN102099934A (zh) 2011-06-15
EP2315268B1 (en) 2016-11-16
JP5305364B2 (ja) 2013-10-02
EP3136457B1 (en) 2018-07-11
EP2333845A2 (en) 2011-06-15
EP2333845B1 (en) 2016-11-09
US8946745B2 (en) 2015-02-03
US20110114984A1 (en) 2011-05-19
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