KR20140041975A - 범프 구조체 및 이를 포함하는 전기적 연결 구조체 - Google Patents

범프 구조체 및 이를 포함하는 전기적 연결 구조체 Download PDF

Info

Publication number
KR20140041975A
KR20140041975A KR1020120106710A KR20120106710A KR20140041975A KR 20140041975 A KR20140041975 A KR 20140041975A KR 1020120106710 A KR1020120106710 A KR 1020120106710A KR 20120106710 A KR20120106710 A KR 20120106710A KR 20140041975 A KR20140041975 A KR 20140041975A
Authority
KR
South Korea
Prior art keywords
extension
layer
body portion
substrate
pads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020120106710A
Other languages
English (en)
Korean (ko)
Inventor
조문기
김영룡
박선희
임환식
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020120106710A priority Critical patent/KR20140041975A/ko
Priority to US14/014,300 priority patent/US9312213B2/en
Priority to CN201310445656.XA priority patent/CN103681556B/zh
Priority to JP2013197965A priority patent/JP2014068015A/ja
Publication of KR20140041975A publication Critical patent/KR20140041975A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01233—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01235—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01255—Changing the shapes of bumps by using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01257—Changing the shapes of bumps by reflowing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
    • H10W72/01938—Manufacture or treatment of bond pads using blanket deposition in gaseous form, e.g. by CVD or PVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01971—Cleaning, e.g. oxide removal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H10W72/07254—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/231—Shapes
    • H10W72/232—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/231—Shapes
    • H10W72/234—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/244—Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/247—Dispositions of multiple bumps
    • H10W72/248—Top-view layouts, e.g. mirror arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/281—Auxiliary members
    • H10W72/285—Alignment aids, e.g. alignment marks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/281—Auxiliary members
    • H10W72/287—Flow barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/922—Bond pads being integral with underlying chip-level interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/942—Dispositions of bond pads relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
KR1020120106710A 2012-09-25 2012-09-25 범프 구조체 및 이를 포함하는 전기적 연결 구조체 Ceased KR20140041975A (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020120106710A KR20140041975A (ko) 2012-09-25 2012-09-25 범프 구조체 및 이를 포함하는 전기적 연결 구조체
US14/014,300 US9312213B2 (en) 2012-09-25 2013-08-29 Bump structures having an extension
CN201310445656.XA CN103681556B (zh) 2012-09-25 2013-09-25 凸块结构、电连接结构及其形成方法
JP2013197965A JP2014068015A (ja) 2012-09-25 2013-09-25 バンプ構造体、電気的接続構造体、及びその形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120106710A KR20140041975A (ko) 2012-09-25 2012-09-25 범프 구조체 및 이를 포함하는 전기적 연결 구조체

Publications (1)

Publication Number Publication Date
KR20140041975A true KR20140041975A (ko) 2014-04-07

Family

ID=50318664

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120106710A Ceased KR20140041975A (ko) 2012-09-25 2012-09-25 범프 구조체 및 이를 포함하는 전기적 연결 구조체

Country Status (4)

Country Link
US (1) US9312213B2 (enExample)
JP (1) JP2014068015A (enExample)
KR (1) KR20140041975A (enExample)
CN (1) CN103681556B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015228472A (ja) * 2014-06-03 2015-12-17 株式会社ソシオネクスト 半導体装置およびその製造方法
JP6329059B2 (ja) 2014-11-07 2018-05-23 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN108598177A (zh) * 2015-01-19 2018-09-28 苏州固锝电子股份有限公司 高精度高良率整流器件
JP6522980B2 (ja) * 2015-02-18 2019-05-29 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR102450326B1 (ko) * 2015-10-06 2022-10-05 삼성전자주식회사 반도체 칩, 이의 제조방법, 및 이를 포함하는 반도체 패키지
KR20180136148A (ko) * 2017-06-14 2018-12-24 에스케이하이닉스 주식회사 범프를 구비하는 반도체 장치
TWI736695B (zh) * 2017-10-24 2021-08-21 啟耀光電股份有限公司 電子裝置與其製造方法
KR102544375B1 (ko) * 2018-06-21 2023-06-15 시트로닉스 테크놀로지 코퍼레이션 범프 구조물
US11166381B2 (en) 2018-09-25 2021-11-02 International Business Machines Corporation Solder-pinning metal pads for electronic components
CN109877411A (zh) * 2019-04-10 2019-06-14 中国电子科技集团公司第十三研究所 无助焊剂的微电路焊接组装方法
CN110418510A (zh) * 2019-07-15 2019-11-05 宁波华远电子科技有限公司 一种开放性电镀凸台的制作方法
KR20230045322A (ko) * 2021-09-28 2023-04-04 삼성전자주식회사 반도체 패키지
CN114189981B (zh) * 2021-12-17 2023-07-28 浪潮(山东)计算机科技有限公司 一种pcb板上连接器焊盘及反焊盘
US12224222B2 (en) * 2022-01-11 2025-02-11 Infineon Technologies Ag Semiconductor package having a thermally and electrically conductive spacer
US12183708B2 (en) 2022-01-31 2024-12-31 International Business Machines Corporation Double resist structure for electrodeposition bonding
US12354983B2 (en) * 2022-03-30 2025-07-08 International Business Machines Corporation Fine-pitch joining pad structure
US20250329672A1 (en) * 2024-04-22 2025-10-23 Taiwan Semiconductor Manufacturing Company Limited Bonding scheme to provide improved coplanarity and high joint yields with reduced costs and methods for forming the same

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0436114Y2 (enExample) * 1986-08-28 1992-08-26
US6388203B1 (en) * 1995-04-04 2002-05-14 Unitive International Limited Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby
KR100425750B1 (ko) 1995-04-05 2004-07-16 유나이티브 인터내셔널 리미티드 마이크로일렉트로닉 기판용 솔더범프구조체
US5902686A (en) 1996-11-21 1999-05-11 Mcnc Methods for forming an intermetallic region between a solder bump and an under bump metallurgy layer and related structures
EP0899787A3 (en) * 1997-07-25 2001-05-16 Mcnc Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structurs formed thereby
JP2003179183A (ja) * 1999-10-29 2003-06-27 Hitachi Ltd 半導体装置およびその製造方法
JP3446826B2 (ja) * 2000-04-06 2003-09-16 沖電気工業株式会社 半導体装置及びその製造方法
US6818545B2 (en) * 2001-03-05 2004-11-16 Megic Corporation Low fabrication cost, fine pitch and high reliability solder bump
JP2007073681A (ja) 2005-09-06 2007-03-22 Renesas Technology Corp 半導体装置およびその製造方法
JP4577690B2 (ja) * 2005-09-29 2010-11-10 エルピーダメモリ株式会社 半導体装置
JP4708148B2 (ja) 2005-10-07 2011-06-22 ルネサスエレクトロニクス株式会社 半導体装置
US7674701B2 (en) 2006-02-08 2010-03-09 Amkor Technology, Inc. Methods of forming metal layers using multi-layer lift-off patterns
KR100753415B1 (ko) * 2006-03-17 2007-08-30 주식회사 하이닉스반도체 스택 패키지
DE102006028811A1 (de) 2006-06-21 2007-12-27 Qimonda Ag Verfahren zum Aufbringen von Lot auf Umverdrahtungsleitungen
US20080093749A1 (en) * 2006-10-20 2008-04-24 Texas Instruments Incorporated Partial Solder Mask Defined Pad Design
JP4536757B2 (ja) * 2007-08-02 2010-09-01 株式会社フジクラ 半導体パッケージおよび半導体パッケージの製造方法
JP5512082B2 (ja) * 2007-12-17 2014-06-04 株式会社東芝 半導体装置の製造方法及び半導体装置
WO2009151123A1 (ja) 2008-06-12 2009-12-17 三菱マテリアル株式会社 はんだペーストを用いた基板と被搭載物の接合方法
CN101728346A (zh) * 2008-10-10 2010-06-09 瀚宇彩晶股份有限公司 凸块结构及其制作方法
JP5249080B2 (ja) 2009-02-19 2013-07-31 セイコーインスツル株式会社 半導体装置
JP2010225851A (ja) * 2009-03-24 2010-10-07 Tamura Seisakusho Co Ltd はんだ堆積制御用基板
US9035459B2 (en) * 2009-04-10 2015-05-19 International Business Machines Corporation Structures for improving current carrying capability of interconnects and methods of fabricating the same
US8546254B2 (en) 2010-08-19 2013-10-01 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming copper pillar bumps using patterned anodes
US20120098120A1 (en) 2010-10-21 2012-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Centripetal layout for low stress chip package
KR101782503B1 (ko) 2011-05-18 2017-09-28 삼성전자 주식회사 솔더 범프 붕괴를 억제하는 반도체 소자의 범프 형성방법

Also Published As

Publication number Publication date
US20140084457A1 (en) 2014-03-27
CN103681556A (zh) 2014-03-26
CN103681556B (zh) 2018-06-08
JP2014068015A (ja) 2014-04-17
US9312213B2 (en) 2016-04-12

Similar Documents

Publication Publication Date Title
KR20140041975A (ko) 범프 구조체 및 이를 포함하는 전기적 연결 구조체
US11955449B2 (en) Stacked semiconductor package
US11031347B2 (en) Semiconductor packages
KR102410018B1 (ko) 반도체 패키지
US20120199981A1 (en) Semiconductor device and method of fabricating the semiconductor device
KR100881199B1 (ko) 관통전극을 구비하는 반도체 장치 및 이를 제조하는 방법
KR102007780B1 (ko) 멀티 범프 구조의 전기적 연결부를 포함하는 반도체 소자의 제조방법
EP3547364B1 (en) Semiconductor chip and semiconductor package including the same
KR102468773B1 (ko) 반도체 소자
KR101801137B1 (ko) 반도체 장치 및 그 제조 방법
KR20120035721A (ko) 반도체 패키지 및 반도체 패키지 모듈
JP2004152812A (ja) 半導体装置及び積層型半導体装置
US20090200664A1 (en) Manufacturing method of semiconductor apparatus and semiconductor apparatus
US8890329B2 (en) Semiconductor device
US9548283B2 (en) Package redistribution layer structure and method of forming same
KR102474933B1 (ko) 관통 전극을 갖는 반도체 칩, 이를 포함하는 칩 스택 구조체 및 반도체 칩의 제조 방법
KR101858954B1 (ko) 반도체 패키지 및 이의 제조 방법
KR20130032724A (ko) 반도체 칩, 이를 포함하는 반도체 패키지 및 이의 제조 방법
CN114141764A (zh) 具有具备台阶结构的焊盘的半导体封装件
KR20210126188A (ko) 반도체 소자
US20080251937A1 (en) Stackable semiconductor device and manufacturing method thereof
CN106057685A (zh) 封装方法及倒装芯片封装结构
KR100912427B1 (ko) 적층 칩 패키지 및 그 제조 방법
JP4728079B2 (ja) 半導体装置用基板および半導体装置
US20240250008A1 (en) Semiconductor package

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

E601 Decision to refuse application
E801 Decision on dismissal of amendment
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

PE0801 Dismissal of amendment

St.27 status event code: A-2-2-P10-P12-nap-PE0801

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000