CN103681556A - 凸块结构、电连接结构及其形成方法 - Google Patents
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- CN103681556A CN103681556A CN201310445656.XA CN201310445656A CN103681556A CN 103681556 A CN103681556 A CN 103681556A CN 201310445656 A CN201310445656 A CN 201310445656A CN 103681556 A CN103681556 A CN 103681556A
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Abstract
本发明提供了凸块结构、电连接结构及其形成方法。该凸块结构可以包括:主体部分,与设置在基板上的焊盘间隔开;和第一延伸部,从主体部分的一侧延伸到焊盘上。第二延伸部从主体部分的另一侧延伸。
Description
技术领域
本发明构思涉及包括凸块结构的半导体器件及其形成方法。
背景技术
在半导体产业中,已经引入各种封装技术来满足对大容量、超薄且较小的半导体器件以及利用该半导体器件的电子产品的快速增长的需求。多芯片封装包括垂直堆叠的半导体芯片。利用多芯片封装技术,具有各种功能的半导体芯片形成在比由单个半导体芯片构成的一般封装更小的区域中。
已经越来越需要具有许多输入/输出(I/O)引脚(pin)、优良的电特性和低制造成本的半导体封装,以及高速、高集成度和/或多功能的半导体器件。倒装芯片封装技术是用于实现所述需要的其中一种封装技术。通常,倒装芯片封装的半导体芯片具有连接到凸块的芯片焊盘并以面向下的方式安装在印刷电路板上。然而,倒装芯片封装的机械耐用性和/或电特性会因倒装芯片封装的芯片焊盘的位置而恶化,使得倒装芯片封装的可靠性会恶化。这些问题在具有芯片堆叠结构的其他半导体封装和/或封装堆叠结构中也会发生。
发明内容
本发明构思的实施例可以提供能够容易地将基板电连接至彼此的结构。
本发明构思的实施例还可以提供能够改善半导体器件的可靠性的结构。
本发明构思的实施例可以提供能够减小半导体器件的焊盘之间的距离的结构。
在一个方面中,凸块结构可以包括:主体部分,提供在基板上并与设置在基板上的焊盘间隔开;第一延伸部,从主体部分的一侧延伸到焊盘上;以及第二延伸部,从主体部分的另一侧延伸。第一延伸部的宽度可以小于主体部分的宽度。
在一实施例中,凸块结构可以包括顺序地堆叠在基板上的阻挡层、金属层和焊料层。焊料层在主体部分中的部分可以比焊料层在第一延伸部中的另一部分厚。
在一实施例中,焊料层的厚度可以从焊盘附近的位置朝向主体部分增大。
在一实施例中,焊料层的厚度可以从主体部分朝向第二延伸部的端部分减小。
在一实施例中,焊料层的最厚部分可以提供于主体部分中。
在一实施例中,第二延伸部的长度可以小于第一延伸部的长度。
在一实施例中,第一延伸部的宽度可以具有主体部分的宽度的约10%至约90%的范围。
在一实施例中,第一延伸部的长度可以大于主体部分的长度。
在一实施例中,第二延伸部可以包括多个第二延伸部;多个第二延伸部中的至少一个具有不同于多个第二延伸部中的另一个的长度的长度。
在一实施例中,第一延伸部可以在第一方向上延伸。凸块结构还可以包括:第三延伸部,在交叉第一方向的第二方向上从第一延伸部延伸。
在一实施例中,第三延伸部可以提供在第一延伸部的两侧。
在另一方面中,凸块结构可以包括:主体部分,提供在基板上并与设置在基板上的焊盘间隔开;和第一延伸部,从主体部分的一侧延伸到焊盘。主体部分和第一延伸部可以包括顺序地堆叠在基板上的阻挡层、金属层和焊料(solder)层。金属层的厚度可以是阻挡层的厚度的三倍或更多倍。主体部分的上表面可以高于第一延伸部的上表面。
在一实施例中,第一延伸部可以在第一方向上延伸;并且在平面图中,在基本上垂直于第一方向的第二方向上,第一延伸部的宽度可以小于主体部分的宽度。
在一实施例中,第一延伸部的宽度可以具有主体部分的宽度的约10%至约90%的范围。
在一实施例中,第一延伸部的长度可以大于主体部分的长度。
在一实施例中,主体部分中的焊料层的厚度可以大于第一延伸部中的焊料层的厚度。
在一实施例中,主体部分中的焊料层的厚度可以为第一延伸部中的焊料层的厚度的约1.5倍或更多倍。
在一实施例中,焊料层的厚度可以沿第一延伸部至主体部分增大。
在一实施例中,凸块结构还可以包括:金属-焊料混合层,设置在金属层和焊料层之间。
在一实施例中,凸块结构还可以包括:保护绝缘层,设置在基板和阻挡层之间。保护绝缘层可以暴露焊盘的上表面。
在一实施例中,金属层的侧壁和阻挡层的侧壁可以包括从焊料层的外边界横向地凹陷的底切区域。
在一实施例中,凸块结构还可以包括:第二延伸部,从主体部分的另一侧延伸。主体部分的上表面可以高于第二延伸部的上表面。
在一实施例中,第二延伸部可以在长度上短于第一延伸部。
在另一方面中,一种电连接结构可以包括:第一焊盘,在第一基板上;凸块结构,连接到第一焊盘;和第二焊盘,在第二基板上,第二焊盘通过凸块结构电连接到第一焊盘。每个凸块结构可以包括:主体部分,与第一焊盘横向地间隔开并连接到第二焊盘;第一延伸部,从主体部分的一侧延伸到第一焊盘上;以及第二延伸部,从主体部分的另一侧延伸。主体部分可以比第一延伸部厚。
在一实施例中,每个凸块结构可以包括顺序地堆叠在第一基板上的阻挡层、金属层和焊料层;焊料层的最厚部分可以设置在主体部分中。
在一实施例中,第一延伸部中的焊料层可以朝向主体部分变厚。
在一实施例中,第一延伸部可以在第一方向上延伸;并且在平面图中,在垂直于第一方向的第二方向上,第一延伸部的宽度可以小于主体部分的宽度。
在一实施例中,第一延伸部的宽度可以具有主体部分的宽度的约10%至约90%的范围。
在一实施例中,第一焊盘可以布置在一个方向上。在这种情况下,与布置在一个方向上的第一焊盘中的奇数编号的焊盘连接的凸块结构可以设置在第一焊盘的一侧;与布置在所述一个方向上的第一焊盘中的偶数编号的焊盘连接的凸块结构可以设置在第一焊盘的另一侧。
在一个实施例中,在平面图中,第一焊盘在第一方向上沿第一基板布置。此外,凸块结构包括第一组凸块结构和第二组凸块结构。第一组凸块结构分别连接到第一焊盘中的奇数编号的焊盘,第二组凸块结构分别连接到第一焊盘中的偶数编号的焊盘。第一组凸块结构在平面图中沿第二方向延伸,并设置在第一焊盘的第一侧。第二组凸块结构沿第二方向延伸,并设置在第一焊盘的相对侧。
在一实施例中,电连接结构还可以包括:绝缘图案,设置在第二基板上并垂直地交叠第一延伸部。
在一实施例中,绝缘图案可以在所述一个方向上延伸。
在一实施例中,每个凸块结构的主体部分可以与每个第二焊盘对准。
在另一方面中,一种形成电连接结构方法可以包括:在基板上形成焊盘;在焊盘上形成阻挡层;在阻挡层上形成包括开口的模子图案;在开口中顺序地形成金属层和焊料镀层;以及回流焊料镀层。开口可以包括:第一部分,在第一方向上从焊盘延伸;和第二部分,具有比第一部分的宽度大的宽度。
在一实施例中,开口还可以包括:第三部分,从第二部分延伸。第三部分可以在长度上比第一部分短。
在一实施例中,当回流焊料镀层时,焊料镀层的在第一部分中的部分可以通过表面张力移到第二部分。
在一实施例中,所述方法还可以包括:利用通过回流焊料镀层形成的焊料层作为蚀刻掩模来蚀刻阻挡层。
在一实施例中,所述方法还可以包括:在阻挡层和金属层之间形成籽层。籽层可以包括与金属层相同的材料。
在一实施例中,籽层可以在蚀刻阻挡层时与阻挡层一起被蚀刻。
在一实施例中,所述方法还可以包括:在回流焊料镀层之前,去除形成在籽层上的自然氧化物层。自然氧化物层可以利用甲酸(HCO2H)通过热处理工艺被去除。
在一实施例中,蚀刻阻挡层可以包括:进行湿蚀刻工艺。当进行湿蚀刻工艺时,底切区域可以形成在金属层的侧壁和/或阻挡层的侧壁上。
在一些实施例中,一种半导体封装包括:半导体芯片,具有芯片焊盘;和凸块结构。凸块结构包括:金属层图案,在芯片焊盘上;和焊料镀层,设置在金属层图案上。焊料镀层包括从其突出以耦接到基板的接合部分。芯片焊盘的中心与焊料镀层的接合部分的中心间隔开。
在一些实施例中,凸块结构可以具有沿其中心轴不对称的形状。
在一些实施例中,一种半导体封装包括:半导体芯片,具有芯片焊盘;和凸块结构,在芯片焊盘上。凸块结构可以包括:再分布层,耦接到芯片焊盘并延伸通过芯片焊盘的边缘;和焊料镀层,布置在再分布层上。焊料层具有位于与芯片焊盘间隔开的区域中的突出部分。
在一些实施例中,半导体芯片包括具有暴露芯片焊盘的开口的钝化层,凸块结构的再分布层设置在钝化层的最上表面上。
附图说明
鉴于附图和伴随的详细说明,本发明构思将变得更明显。
图1A是示出根据本发明构思的示例实施例的凸块结构(bump structure)的平面图;
图1B是示出根据本发明构思的示例实施例的凸块结构的截面图;
图1C是图1B的区域‘Q’的放大图;
图2是根据本发明构思的示例实施例的形成凸块结构的方法的流程图;
图3A至图7A是示出根据本发明构思的示例实施例的形成凸块结构的方法的平面图;
图3B至图7B是示出根据本发明构思的示例实施例的形成凸块结构的方法的截面图;
图8A、图8B和图8C是示出根据本发明构思的其它实施例的凸块结构的第二延伸部的形状的平面图;
图9A、图9B和图9C是示出根据本发明构思另一些实施例的凸块结构的第一延伸部的形状的平面图;
图10是示出包括根据本发明构思的示例实施例的凸块结构的半导体封装的截面图;
图11A是示出第一基板的上表面的平面图;
图11B是示出第二基板的上表面的平面图;
图11C是图10的区域‘R’的放大图;
图12A和图12B是示出根据本发明构思的其它实施例的半导体封装的截面图;
图13是示出根据本发明构思的示例实施例的封装模块的平面图;
图14是示出根据本发明构思的示例实施例的存储卡的示意框图;
图15是示出根据本发明构思的示例实施例的电子系统的示意框图;以及
图16示出应用有根据本发明构思的示例实施例的电子系统的移动电话。具体实施方式
下文将参照附图更全面地描述本发明构思,附图中示出了本发明构思的示例性实施例。本发明构思的优点和特征以及实现它们的方法将从以下的示例性实施例变得明显,这些示例性实施例将参照附图被更详细地描述。然而,应当注意到,本发明构思不限于以下的示例性实施例,而是可以以各种形式实施。因此,示例性实施例仅被提供来公开本发明构思并让本领域技术人员知道本发明构思的分类。在附图中,本发明构思的实施例不限于这里提供的具体示例并且为了清晰被夸大。
这里所用的术语仅是为了描述特定实施例的目的,并非要限制本发明。如这里所用的,除非上下文另有明确表述,否则单数形式“一”和“该”均同时旨在包括复数形式。如这里所用的,术语“和/或”包括一个或多个所列相关项目的任何及所有组合。将理解,当称一元件“连接”或“耦接”到另一元件时,它可以直接连接或耦接到另一元件,或者可以存在中间元件。
类似地,将理解,当一元件诸如层、区域或基板被称为在另一元件“上”时,它可以直接在另一元件上或可以存在中间元件。相反,术语“直接”表示没有中间元件。还将理解,术语“包括”和/或“包含”,当在这里使用时,表明所述特征、整体、步骤、操作、元件和/或组件的存在,但并不排除一个或多个其他特征、整体、步骤、操作、元件、组件和/或其组的存在或增加。
另外,在详细描述中的实施例将通过作为本发明构思的理想示例性视图的截面图来描述。因此,示例性视图的形状可以根据制造技术和/或可允许公差而修改。因此,本发明构思的实施例不限于示例性视图中示出的特定形状,而是可以包括可根据制造工艺产生的其他形状。在附图中图示的区域具有一般的性质,并用于示出元件的特定形状。因此,这不应被解释为限于本发明构思的范围。
还将理解,虽然这里可以使用术语第一、第二、第三等描述各种元件,但这些元件不应受限于这些术语。这些术语仅用于将一个元件与另一元件区别开。因此,一些实施例中的第一元件可以在其他实施例中被称为第二元件,而不脱离本发明的教导。这里说明和图示的本发明构思的多个方面的实施例包括它们的互补对应物。相同的附图标记或相同的参考标记在说明书始终指代相同的元件。
而且,这里参照截面图和/或平面图描述示例性实施例,这些图为理想化示例性图示。因而,由例如制造技术和/或公差引起的图示形状的变化是可能发生的。因此,示例性实施例不应被解释为限于这里示出的区域的形状,而是包括由例如制造引起的形状偏差在内。例如,图示为矩形的蚀刻区域将通常具有圆化或弯曲的特征。因此,附图所示的区域本质上是示意性的,它们的形状并非要示出器件的区域的真实形状,也并非要限制示例实施例的范围。
[凸块结构]
图1A是示出根据本发明构思的示例实施例的凸块结构的平面图。图1B是示出根据本发明构思的示例实施例的凸块结构的截面图。图1C是图1B的区域‘Q’的放大图。
参照图1A、图1B和图1C,第一焊盘(或芯片焊盘)105可以提供在第一基板100上。第一基板100可以包括基于半导体的结构。例如,第一基板100可以包括硅基板或绝缘体上硅(SOI)基板。第一基板100可以包括至少一个集成电路(未示出)。例如,第一基板100可以包括存储器件、系统LSI器件诸如微控制器、逻辑器件、模拟器件、数字信号处理器件和芯片上系统(SOC)中的至少一种。
在一实施例中,第一焊盘105可以电连接到形成在第一基板100中的集成电路(未示出)。例如,第一焊盘105可以包括金属诸如铝(Al)、铜(Cu)、银(Ag)或金(Au)。第一焊盘105的形状不限于图1A示出的四边形形状。第一焊盘105的形状可以改变。例如,第一焊盘105可以具有多于四个的边,例如,五边形、六边形、八边形形状。
第一焊盘105的上表面的一部分可以通过提供在第一基板100上的保护绝缘层暴露,如图1B所示。保护绝缘层可以包括顺序地堆叠在第一基板100上的下绝缘层101和上绝缘层111。下绝缘层101可以是用于第一基板100的钝化的绝缘层。例如,下绝缘层101可以包括硅氧化物、硅氮化物和硅氮氧化物中的至少一种。上绝缘层111可以包括有机材料诸如聚酰亚胺或环氧树脂。
凸块结构BS1可以提供在上绝缘层111上。凸块结构BS1可以包括顺序地堆叠在上绝缘层111上的阻挡图案(barrier pattern)121、籽图案126、金属层131和焊料层141。例如,阻挡图案121可以包括金属材料诸如钛(Ti)和/或钛-钨(TiW)。阻挡图案121可以防止第一焊盘105被氧化并可以增加第一焊盘105和金属层131之间的粘合强度。
金属层131可以提供在阻挡图案121上。金属层131的厚度可以为阻挡图案121的厚度的三倍或更多倍。在一实施例中,金属层131可以包括与阻挡图案121不同的金属材料。例如,金属层131可以包括铜(Cu)或铝(Al)。
籽图案126可以提供在阻挡图案121和金属层131之间。籽图案126可以包括与金属层131相同的材料。例如,籽图案126可以包括铜(Cu)。籽图案126的厚度可以等于或小于金属层131的厚度的三分之一(即,1/3)。
焊料层141可以提供在金属层131上,如图1C所示。焊料层141的厚度可以不是均一的,例如在金属层131上沿长度方向变化。后面将更详细地描述焊料层141的厚度。
金属-焊料混合层146可以提供在金属层131和焊料层141之间。金属层131可以与焊料层141反应以形成金属-焊料混合层146。例如,金属-焊料混合层146可以包括铜(Cu)-锡(Sn)-银(Ag)合金。金属-焊料混合层146的厚度可以小于金属层131的厚度的约50%。
设置在焊料层141下面的图案121和126以及层131和146的侧壁可以具有从焊料层141的侧壁横向地凹陷的底切区域UR。底切区域UR可以在后面描述的形成方法中通过用于形成阻挡图案121和籽图案126的蚀刻工艺形成。
凸块结构BS1可以包括与第一焊盘105间隔开的主体部分(或接合部分)BP以及从主体部分BP的一侧延伸到第一焊盘105上或朝向第一焊盘105延伸的第一延伸部TP。第一延伸部TP的第一端部分连接到第一焊盘105,第一延伸部TP的第二端部分连接到主体部分BP。第一延伸部TP的宽度可以小于主体部分BP的宽度。在一实施例中,如果第一延伸部TP在第一方向(在下文,称为‘X方向’)上延伸,则在垂直于X方向的第二方向(在下文,称为‘Y方向’)上第一延伸部TP的宽度W1可以小于主体部分BP的宽度W2。例如,第一延伸部TP的宽度W1可以具有主体部分BP的宽度W2的约10%至约90%的范围。在下文,在本说明书中,主体部分BP的宽度和/或长度、第一延伸部TP的宽度和/或长度以及第二延伸部SP的宽度和长度可以基于焊料层141的外边界和/或焊料层141下面的金属层131的外边界而被确定。第一延伸部TP、主体部分BP和第二延伸SP的每个能够包括焊料层141、金属层131、籽图案126和阻挡图案121的相应部分。
凸块结构BS1还可以包括从主体部分BP的另一侧延伸的至少一个第二延伸部SP。在一实施例中,三个第二延伸部SP可以如图1A所示地提供。然而,本发明构思不限于此。第二延伸部SP的宽度W3可以小于主体部分BP的宽度W2。
在X方向上,第一延伸部TP的长度E1可以大于主体部分BP的长度E2。第二延伸部SP在X方向上的长度E3可以小于第一延伸部TP的长度E1和/或主体部分BP的长度E2。在一实施例中,相对较长的第一延伸部TP可以用作再分布配线结构。因此,凸块结构BS1的一部分可以执行与再分布配线结构相同的功能,而没有需要多个工艺的再分布配线结构的形成工艺。
焊料层141的最厚部分可以位于主体部分BP中。换句话说,主体部分BP的上表面可以比第一延伸部TP的上表面和第二延伸部SP的上表面高。主体部分BP中的焊料层141的厚度T2可以大于第一延伸部TP中的焊料层141的厚度T1。在一实施例中,主体部分BP中的焊料层141的厚度T2可以是第一延伸部TP中的焊料层141的厚度T1的约1.5倍或更多倍。例如,主体部分BP中的焊料层141的厚度T2可以为第一延伸部TP中的焊料层141的厚度T1的约1.5倍至约6.0倍。主体部分BP中的焊料层141的厚度T2可以大于第二延伸部SP中的焊料层141的厚度T3。
焊料层141的厚度可以从第一延伸部TP的设置在第一焊盘105上的端部分附近的位置朝向主体部分BP逐渐增大。焊料层141的厚度可以从主体部分BP到第二延伸部SP的端部分减小。
根据本发明构思的实施例,具有增大的厚度的主体部分BP可以对应于凸块结构的电连接第一基板100与另一器件(诸如另一电元件或另一基板)的部分。主体部分BP可以与第一焊盘105水平地间隔开,第一延伸部TP布置在其间。因此,凸块结构BS1可以电连接第一焊盘105与另一基板的焊盘或另一器件的端子,而不需要在第一基板100上的再分布结构诸如附加配线、层或图案。另外,由于主体部分BP连接到另一基板的焊盘,所以产生的热和/或物理性应力可以通过第一延伸部TP传输到第一焊盘105。换句话说,第一延伸部TP可以吸收或缓冲施加到第一焊盘105的热和/或物理性应力。如果主体部分BP直接提供在第一焊盘105上,则第一焊盘105会被热和/或物理性应力损伤。然而,通过所述凸块结构BS1,可以大大减少对第一焊盘105的损伤。
[形成凸块结构的方法]
图2是根据本发明构思的示例实施例的形成凸块结构的方法的流程图。图3A至图7A是示出根据本发明构思的示例实施例的形成凸块结构的方法的平面图。图3B至图7B是示出根据本发明构思的示例实施例的形成凸块结构的方法的截面图。
参照图2、图3A和图3B,第一焊盘105可以形成在第一基板100上。第一基板100可以包括基于半导体的结构。例如,第一基板100可以包括硅基板或绝缘体上硅(SOI)基板。第一基板100可以包括至少一个集成电路(未示出)。例如,第一基板100可以包括存储器件、系统大规模集成(LSI)器件诸如微控制器、逻辑器件、模拟器件、数字信号处理器件或和芯片上系统(SOC)中的至少一种。
在一实施例中,第一焊盘105可以电连接到第一基板100中的集成电路(未示出)。例如,第一焊盘105可以包括金属诸如铝(Al)、铜(Cu)、银(Ag)或金(Au)。在一实施例中,金属层可以通过溅射方法或化学气相沉积(CVD)方法形成,然后金属层可以被图案化以形成第一焊盘105。
暴露第一焊盘105的上表面的保护绝缘层(或钝化层)可以形成在第一基板100上(S1)。形成保护绝缘层可以包括在第一基板100上顺序地形成下绝缘层101和上绝缘层111。下绝缘层101可以是用于第一基板100的钝化的绝缘层。例如,下绝缘层101可以包括硅氧化物、硅氮化物和硅氮氧化物中的至少一种。上绝缘层111可以包括有机材料诸如聚酰亚胺或环氧树脂。下绝缘层101和上绝缘层111可以顺序地形成在第一基板100上,然后可以被依次图案化以暴露第一焊盘105。备选地,在下绝缘层101形成在第一基板100上然后被图案化以暴露第一焊盘105之后,上绝缘层101可以形成在具有下绝缘层101的第一基板100上,然后可以被图案化以暴露第一焊盘105。
参照图2、图4A和图4B,阻挡层120和籽层125可以顺序地形成在上绝缘层111上(S2)。阻挡层120可以与通过上绝缘层111暴露的第一焊盘105接触。阻挡层120可以由金属材料诸如钛(Ti)和/或钛-钨(TiW)形成。例如,阻挡层120可以形成为具有约至约的厚度。阻挡层120可以通过薄膜形成工艺诸如溅射方法或物理气相沉积(PVD)方法形成。
在形成阻挡层120之前,可以额外地执行蚀刻工艺以去除形成在第一焊盘105的表面上的自然氧化物层。例如,自然氧化物层可以通过干蚀刻工艺(例如,溅射蚀刻工艺或等离子体蚀刻工艺)或湿蚀刻工艺被去除。
籽层125可以形成在阻挡层120上。籽层125可以由与后面描述的金属层相同的材料形成。例如,籽层125可以包括铜(Cu)。籽层125可以形成为具有约至约的厚度。籽层125可以通过薄膜形成工艺诸如溅射方法或PVD方法形成。
参照图2、图5A和图5B,包括开口192的模子图案191可以形成在籽层125上(S3)。模子图案191可以是光致抗蚀剂图案。例如,模子图案191的高度可以具有约30μm至约120μm的范围。
开口192可以垂直地交叠第一焊盘105的至少一部分。开口192可以包括在X方向上从第一焊盘105延伸的第一部分OP1、连接到第一部分OP1的第二部分OP2以及连接到第二部分OP2的第三部分OP3。第二部分OP2具有比第一部分OP1宽的宽度。在一些实施例中,多个第三部分OP3可以连接到第二部分OP2,如图5A所示。
参照图2、图6A和图6B,金属层131可以形成在开口192(S4)中。金属层131可以通过电镀工艺形成。例如,具有模子图案191的第一基板100可以浸入电镀槽(bath)中以在通过开口192暴露的籽层120上生长金属层131。金属层131可以形成为部分地填充开口192。例如,金属层131可以包括铜(Cu)。然而,本发明构思不限于此。由于金属层131利用模子图案191形成,所以金属层131可以形成为具有窄的宽度。因此,根据本发明构思,凸块结构之间的距离可以小于仅利用焊料层形成的凸块之间的距离。结果,可以提高半导体器件的集成度。金属层131的厚度可以为阻挡层120的厚度的三倍或更多倍。
填充开口192的焊料镀层140可以形成在金属层131上(S5)。焊料镀层140可以通过电镀工艺形成。例如,具有金属层131的第一基板100可以被浸入另一电镀槽中,然后可以执行电镀工艺以形成焊料镀层140。焊料镀层140的熔化温度可以低于金属层131的熔化温度。如图6B所示,焊料镀层140可以具有设置在与模子图案191的上表面实质上相同高度处的上表面。然而,本发明构思不限于此。在其它实施例中,焊料镀层140的上表面可以高于或低于模子图案191的上表面。例如,焊料镀层146可以由锡(Sn)-银(Ag)合金或铅(Pb)-锡(Sn)合金形成。另外,当出现该需要时,焊料镀层140还可以包括添加剂诸如铜(Cu)、钯(Pd)、铋(Bi)和/或锑(Sb)。
参照图2、图7A和图7B,模子图案191可以被去除。例如,模子图案191的去除可以通过灰化工艺进行。在去除模子图案191之后,可以去除形成在籽层125上的自然氧化物层(S6)。自然氧化物层可以使用甲酸(HCO2H)(一种羧酸)的热处理工艺被去除。例如,悬浮态的甲酸颗粒可以精细地且均匀地分布在第一基板100被装入其中的工艺腔室中,然后可以在约200摄氏度至约250摄氏度的温度进行热处理工艺以去除自然氧化物层。
在凸块的一般形成工艺中,自然氧化物层可以利用液体熔剂(liquid flux)被去除。熔剂可以去除设置在金属层131的表面上的自然氧化物层,并可以改善湿润性以便焊料层141良好地覆盖金属层131的表面。然而,如果使用该熔剂,则熔剂残余物会保留在籽层125上。因此,如果籽层125是在进行焊料镀层140的回流工艺之后被去除,如上所述,则籽层125的被熔剂残余物覆盖的部分不能通过湿蚀刻工艺被去除。在本发明构思的实施例中,自然氧化物层可以通过如上所述的利用甲酸的热处理工艺被去除。因此,可以不需要用于去除熔剂残余物的额外清洗工艺。
焊料镀层140的回流工艺可以被执行以形成回流焊料层141(S7)。结果,凸块结构BS1可以形成为包括从第一焊盘105延伸的第一延伸部TP、提供在第一延伸部TP的端部分的主体部分BP以及从主体部分BP延伸的第二延伸部SP。例如,回流工艺可以在约200摄氏度至约300摄氏度的温度进行。金属-焊料混合层146可以形成在焊料层141和金属层131之间,如参照图1C所述的。
在回流工艺之前焊料镀层140的分别存在于开口的第一部分OP1和第三部分OP3中的部分A1和A2可以在回流工艺期间移到主体部分BP(例如,图7B中的箭头方向)。换句话说,由于第一和第二延伸部TP和SP的宽度小于主体部分BP的宽度,所以回流的焊料材料可以通过表面张力移到主体部分BP。结果,与回流工艺之前第一和第二延伸部TP和SP的高度相比,在回流工艺之后第一和第二延伸部TP和SP的高度可以降低;与回流工艺之前主体部分BP的高度相比,回流工艺之后的主体部分BP的高度可以增加。第二延伸部SP可以实质上防止具有增加高度的主体部分BP中的焊料层141沿金属层131的侧壁流动到籽层125上,使得主体部分BP的焊料层141可以具有足够的厚度。
在进行回流工艺之后,可以利用去离子(DI)水进行清洗工艺。
再次参照图1A、图1B、图1C和图2,阻挡层120和籽层125可以被图案化以形成阻挡图案121和籽图案126(S8)。阻挡层120和籽层125的图案化工艺可以利用焊料层141作为蚀刻掩模进行。例如,阻挡层120和籽层125的图案化工艺可以通过利用包括过氧化氢(H2O2)的蚀刻溶液的湿蚀刻工艺进行。在湿蚀刻工艺期间,焊料层141下面的层的侧壁可以被横向地蚀刻以形成底切区域UR根据本发明构思的实施例,在回流工艺之后进行阻挡层120和籽层125的图案化工艺。因此,尽管形成了底切区域UR,但是焊料层141的润湿角不减小,因为已完成了焊料层141的回流。因此,可以实质上限制润湿角的减小,如果回流工艺在图案化工艺之后进行则可能发生润湿角的减小。结果,可以防止因为由于润湿角的减小而引起的焊料层141沿金属层131侧壁流动。
根据本发明构思的示范性实施例,可以形成凸块结构而没有额外的光刻工艺,除了用于形成模子图案191的光刻工艺之外。
[凸块结构的变型示例]
图8A、图8B和图8C是示出根据本发明构思的一些其它实施例的凸块结构的第二延伸部的形状的平面图。为了说明的容易和方便,与以上实施例相同的元件的描述将被省略或简要地提及。
参照图8A,根据本实施例的凸块结构BS2可以包括第一延伸部TP和主体部分BP,但是可以不包括第二延伸部。
参照图8B,根据本实施例的凸块结构BS3可以包括第一延伸部TP、主体部分BP和第二延伸部SP。与图1A所示的不同,第二延伸部SP可以包括从主体部分BP在Y方向上突出的两个延伸部,但是可以不包括在X方向上延伸的延伸部。
参照图8C,凸块结构BS4可以包括第一延伸部TP、主体部分BP和第二延伸部SP1和SP2。第二延伸部SP1和SP2可以包括从主体部分BP在Y方向上突出的延伸部SP1和从主体部分BP在X方向上突出的延伸部SP2。延伸部SP2在X方向上突出的长度可以大于延伸部SP1在Y方向上突出的长度。备选地,每个延伸部SP1在Y方向上突出的长度可以大于延伸部SP2在X方向上突出的长度。
图9A、图9B和图9C是示出根据本发明构思另一些实施例的凸块结构的第一延伸部的形状的平面图。为了说明的容易和方便,与以上实施例相同的元件的描述将被省略或简要地提及。
参照图9A,凸块结构BS5可以包括第一延伸部TP、主体部分BP和第二延伸部SP。凸块结构BS5还可以包括从第一延伸部TP的侧壁突出的第三延伸部WP。多个第三延伸部WP可以沿第一延伸部TP的两个侧壁设置。当焊料层141通过回流工艺从第一焊盘105移到主体部分BP时,第三延伸部WP可以额外地防止焊料层141沿着金属层131的侧壁流动。
参照图9B,凸块结构BS6可以包括第一延伸部TP、主体部分BP和第二延伸部SP。第一延伸部TP可以具有非线性形状。在一实施例中,第一延伸部TP1可以包括在X方向上延伸的部分和在Y方向上延伸的部分。第一延伸部TP的形状不限于图9B所示的形状。第一延伸部TP的形状可以取决于第一焊盘105的布置位置和/或安装在第一基板100上的第二基板的焊盘的布置位置而改变。
参照图9C,凸块结构BS7可以包括多个第一延伸部,例如两个第一延伸部TP1和TP2、主体部分BP和第二延伸部SP。第一延伸部TP1和TP2可以延伸到单个第一焊盘105上并可以连接到单个主体部分BP。备选地,第一延伸部TP1和TP2可以分别延伸到彼此不同的焊盘上。
[包括凸块结构的半导体封装]
图10是示出包括根据本发明构思的示例实施例的凸块结构的半导体封装的截面图。图11A是示出第一基板100的上表面12的平面图,图11B是示出第二基板200的上表面21的平面图。图11C是图10的区域‘R’的放大图。
参照图10、图11A、图11B和图11C,半导体封装401可以包括第二基板200(例如,封装基板)和安装在第二基板200上的第一半导体器件10。第二基板200可以是印刷电路板(PCB)。第二基板200可以包括绝缘基板201、穿过绝缘基板201的通孔207、设置在绝缘基板201的上表面上的第二焊盘205、和设置在绝缘基板201的下表面上的第三焊盘211。绝缘层206可以覆盖第三焊盘211的部分,封装凸块73可以提供在分别被绝缘层206暴露的第三焊盘211上。封装凸块73可以是焊球、导电凸块、导电间隔物、引脚栅格阵列或其任何组合。备选地,封装凸块73可以是根据本发明构思的以上实施例的凸块结构。
第一半导体器件10可以包括第一基板100。多个第一焊盘105和多个凸块结构BS可以提供在第一半导体器件10中的第一基板100的上表面12上。凸块结构BS可以以交替或Z字形的方式布置,使第一焊盘105在其之间。例如,第一焊盘105可以在Y方向上布置,第一焊盘105可以包括奇数编号的焊盘105_1和偶数编号的焊盘105_2。连接到奇数编号的焊盘105_1的凸块结构BS_1可以设置在第一焊盘105的第一侧,连接到偶数编号的焊盘105_2的凸块结构BS_2可以设置在第一焊盘105的第二侧。第一侧和第二侧可以是沿X方向彼此间隔开的区域,第一焊盘105布置在第一侧与第二侧之间。在一实施例中,连接到奇数编号的焊盘105_1的凸块结构BS_1可以在与连接到偶数编号的焊盘105_2的凸块结构BS_2的延伸方向相反的方向上延伸。然而,本发明构思不限于此。
根据本发明构思的一些实施例,凸块结构BS可以以交替或Z字形方式布置,从而即使第一焊盘105之间在Y方向上的距离减小,也可以防止相邻凸块结构BS之间的短路。因此,第一焊盘105之间的距离能够被大大减小,从而半导体器件可以更高度地集成。另外,凸块结构BS的形状能够取决于第二焊盘205的布置而改变,使得第一半导体器件10可以容易地安装在第二基板200上。
第一半导体器件10可以以第一基板100的上表面12面对第二基板200的上表面21的方式安装在第二基板200上。形成在第一半导体器件10上的凸块结构BS的主体部分BP可以与第二焊盘205对准。在第一半导体器件10安装在第二基板200上之后,模子层310可以形成为覆盖第一半导体器件10。模子层310可以填充第一半导体器件10和第二基板200之间的空间。模子层310可以包括环氧模塑化合物。
在第二焊盘205之间延伸的绝缘图案215可以提供在第二基板200上。当第一半导体器件10安装在第二基板200上时,绝缘图案215可以垂直地交叠凸块结构BS中的第一延伸部TP的至少部分。绝缘图案215可以防止第一延伸部TP与第二基板200的除了第二焊盘205之外的其他结构短路。绝缘图案215可以在第一焊盘105的布置方向(例如,Y方向)上延伸并可以垂直地交叠第一焊盘105。例如,绝缘图案215可以包括硅氧化物、硅氮化物和/或硅氮氧化物。
[半导体封装的变型示例]
图12A和图12B是示出根据本发明构思的其他实施例的半导体封装的截面图。为了简单起见,与上述实施例相同的元件的描述将被省略或简要地提及。
参照图12A,半导体封装402可以包括第二基板200、安装在第二基板200上的第一半导体器件10以及在第一半导体器件10上的第二半导体器件300。第一半导体器件10还可以包括贯穿电极TS,凸块结构BS可以电连接到贯穿电极TS。第二半导体器件300可以是不同于第一半导体器件10的另一种类型的半导体器件。例如,第二半导体器件300可以对应于存储芯片或逻辑芯片。第二半导体器件300可以不包括根据本发明构思实施例的凸块结构BS。例如,第二半导体器件300可以通过常规焊料凸块75连接到设置在第一半导体器件10上的第四焊盘106。
参照图12B,半导体封装403可以包括第二基板200、安装在第二基板200上的第一半导体器件10以及在第一半导体器件10上的第三半导体器件20。根据本实施例,半导体封装403可以是多芯片封装。第三半导体器件20可以是与第一半导体器件10相同的种类和/或可以具有与第一半导体器件10相同的结构。
图13是示出根据本发明构思的示例实施例的封装模块500的平面图。参照图13,封装模块500可以包括具有外部连接端子508的模块基板502以及安装在模块基板502上的半导体芯片504和四方扁平封装(QFP)型半导体封装506。半导体芯片504和/或半导体封装506可以包括根据本发明构思的上述实施例的半导体器件。封装模块500可以通过外部连接端子508连接到外部电子设备。
图14是示出根据本发明构思的示例实施例的存储卡600的示意框图。参照图14,存储卡600可以包括在壳体610中的控制器620和存储器件630。控制器620和存储器件630可以彼此交换电信号。例如,存储器件630可以通过控制器620的命令而与控制器620交换数据。因此,存储卡600可以在存储器件630中存储数据或可以将存储器件630中存储的数据输出到外部电子设备。
控制器620和/或存储器件630可以包括根据本发明构思的以上实施例的半导体器件或半导体封装中的至少一个。存储卡600可以用作安装在各种便携式设备中的数据存储介质。例如,存储卡600可以包括多媒体卡(MMC)或安全数字(SD)卡。
图15是示出根据本发明构思的示例实施例的电子系统700的示意框图。参照图15,电子系统700可以包括根据本发明构思的上述实施例的半导体器件或半导体封装中的至少一个。电子系统700可以包括移动装置或计算机。例如,电子系统700可以包括通过数据总线720彼此通信的存储系统712、处理器714、RAM器件716和用户接口单元718。处理器714可以执行程序并控制电子系统700。RAM器件716可以用作处理器714的操作存储器。例如,处理器714和RAM器件716的每个可以包括根据本发明构思的以上实施例的半导体器件或半导体封装。备选地,处理器714和RAM器件716可以被包括在一个封装中。用户接口单元718可以用于电子系统700的数据输入/输出。存储系统712可以存储用于操作处理器714的代码和由处理器714处理的数据和/或从外部电子设备输入的数据。存储系统712可以包括控制器和存储器件。存储系统712可以与图14示出的存储卡600实质上相同。
电子系统700可以应用于各种电子设备的电子控制元件。图16示出应用有图15的电子系统700的移动电话800。在其它实施例中,图15的电子系统700可以应用于便携式笔记本、MP3播放器、导航系统、固态盘(SSD)、汽车和/或家用电器。
根据本发明构思的示范性实施例,基板可以容易地电连接到彼此。另外,可以改善半导体器件的可靠性。此外,可以提供能够减少焊盘之间的距离的半导体器件。
虽然已经参照示例实施例描述了本发明构思,但是对于本领域技术人员将是明显的,可以进行各种改变和变型而不背离本发明构思的精神和范围。因此,应当理解,以上实施例不是限制性的,而是说明性的。因此,本发明构思的范围将由以下权利要求及其等同物的最宽可允许解释来确定,而不应被以上描述限制或限定。
本申请要求于2012年9月25日提交的韩国专利申请No.10-2012-0106710的优先权,其全部内容通过引用结合于此。
Claims (44)
1.一种凸块结构,包括:
主体部分,提供在基板上并与设置在所述基板上的焊盘间隔开;
第一延伸部,从所述主体部分的一侧朝向所述焊盘延伸;以及
第二延伸部,从所述主体部分的另一侧延伸,
其中所述第一延伸部的宽度小于所述主体部分的宽度。
2.如权利要求1所述的凸块结构,其中所述凸块结构包括顺序地堆叠在所述基板上的阻挡层、金属层和焊料层;并且
其中所述焊料层在所述主体部分中的部分比所述焊料层在所述第一延伸部中的另一部分厚。
3.如权利要求2所述的凸块结构,其中所述焊料层的厚度从所述焊盘附近的位置朝向所述主体部分增大。
4.如权利要求2所述的凸块结构,其中所述焊料层的厚度从所述主体部分朝向所述第二延伸部的端部分减小。
5.如权利要求2所述的凸块结构,其中所述焊料层的最厚部分提供在所述主体部分中。
6.如权利要求1所述的凸块结构,其中所述第二延伸部的长度小于所述第一延伸部的长度。
7.如权利要求1所述的凸块结构,其中所述第一延伸部的宽度具有所述主体部分的宽度的10%至90%的范围。
8.如权利要求1所述的凸块结构,其中所述第一延伸部的长度大于所述主体部分的长度。
9.如权利要求1所述的凸块结构,其中所述第二延伸部包括多个第二延伸部;并且
其中所述多个第二延伸部中的至少一个具有不同于所述多个第二延伸部中的另一个的长度的长度。
10.如权利要求1所述的凸块结构,其中所述第一延伸部在第一方向上延伸,并且其中所述凸块结构还包括:
第三延伸部,从所述第一延伸部延伸,其中每个第三延伸部在交叉所述第一方向的第二方向上从所述第一延伸部延伸。
11.如权利要求10所述的凸块结构,其中所述第三延伸部提供在所述第一延伸部的两侧。
12.一种凸块结构,包括:
主体部分,提供在基板上并与设置在所述基板上的焊盘间隔开;和
第一延伸部,从所述主体部分的一侧朝向所述焊盘延伸,
其中所述主体部分和所述第一延伸部包括顺序地堆叠在所述基板上的阻挡层、金属层和焊料层;
其中所述金属层的厚度是所述阻挡层的厚度的三倍或更多倍;并且
其中所述主体部分的上表面高于所述第一延伸部的上表面。
13.如权利要求12所述的凸块结构,其中所述第一延伸部在第一方向上延伸;并且
其中,在平面图中,在垂直于所述第一方向的第二方向上,所述第一延伸部的宽度小于所述主体部分的宽度。
14.如权利要求13所述的凸块结构,其中所述第一延伸部的所述宽度具有所述主体部分的所述宽度的10%至90%的范围。
15.如权利要求13所述的凸块结构,其中所述第一延伸部的长度大于所述主体部分的长度。
16.如权利要求12所述的凸块结构,其中在所述主体部分中的所述焊料层的厚度大于在所述第一延伸部中的所述焊料层的厚度。
17.如权利要求16所述的凸块结构,其中所述主体部分中的所述焊料层的厚度为所述第一延伸部中的所述焊料层的厚度的1.5倍或更多倍。
18.如权利要求16所述的凸块结构,其中所述焊料层的厚度沿所述第一延伸部到所述主体部分增大。
19.如权利要求12所述的凸块结构,还包括:
金属-焊料混合层,设置在所述金属层和所述焊料层之间。
20.如权利要求12所述的凸块结构,还包括:
保护绝缘层,设置在所述基板和所述阻挡层之间,所述保护绝缘层暴露所述焊盘的上表面。
21.如权利要求12所述的凸块结构,其中所述金属层的侧壁和所述阻挡层的侧壁包括从所述焊料层的外边界横向地凹陷的底切区域。
22.如权利要求12所述的凸块结构,还包括:
第二延伸部,从所述主体部分的另一侧延伸,其中所述主体部分的上表面高于所述第二延伸部的上表面。
23.如权利要求22所述的凸块结构,其中所述第二延伸部在长度上比所述第一延伸部短。
24.一种电连接结构,包括:
第一焊盘,设置在第一基板上;
凸块结构,连接到所述第一焊盘;和
第二焊盘,设置在第二基板上,所述第二焊盘通过所述凸块结构电连接到所述第一焊盘,
其中每个所述凸块结构包括:
主体部分,与所述第一焊盘横向地间隔开并连接到所述第二焊盘;
第一延伸部,从所述主体部分的一侧延伸到所述第一焊盘;以及
第二延伸部,从所述主体部分的另一侧延伸,
其中所述主体部分比所述第一延伸部厚。
25.如权利要求24所述的电连接结构,其中每个所述凸块结构包括顺序地堆叠在所述第一基板上的阻挡层、金属层和焊料层;并且
其中所述焊料层的最厚部分设置在所述主体部分中。
26.如权利要求25所述的电连接结构,其中所述第一延伸部中的所述焊料层朝向所述主体部分变厚。
27.如权利要求24所述的电连接结构,其中所述第一延伸部在第一方向上延伸;并且
其中在平面图中,在垂直于所述第一方向的第二方向上,所述第一延伸部的宽度小于所述主体部分的宽度。
28.如权利要求27所述的电连接结构,其中所述第一延伸部的宽度具有所述主体部分的所述宽度的10%至90%的范围。
29.如权利要求24所述的电连接结构,其中在平面图中,所述第一焊盘在第一方向上沿所述第一基板布置;
其中所述凸块结构包括第一组凸块结构和第二组凸块结构,其中所述第一组凸块结构分别连接到所述第一焊盘中的奇数编号的焊盘,其中所述第二组凸块结构分别连接到所述第一焊盘中的偶数编号的焊盘;
其中所述第一组凸块结构在平面图中沿第二方向延伸并设置在所述第一焊盘的第一侧;并且
其中所述第二组凸块结构沿所述第二方向延伸并设置在所述第一焊盘的相对侧。
30.如权利要求29所述的电连接结构,还包括:
绝缘图案,设置在所述第二基板上并垂直地交叠所述第一延伸部。
31.如权利要求30所述的电连接结构,其中所述绝缘图案在所述第一方向上延伸。
32.如权利要求24所述的电连接结构,其中每个所述凸块结构的所述主体部分与每个所述第二焊盘对准。
33.一种形成电连接结构方法,包括:
在基板上形成焊盘;
在所述焊盘上形成阻挡层;
在所述阻挡层上形成包括开口的模子图案;
在所述开口中顺序地形成金属层和焊料镀层;以及
回流所述焊料镀层,
其中所述开口包括:第一部分,在第一方向上从所述焊盘延伸;和第二部分,具有比所述第一部分的宽度大的宽度。
34.如权利要求33所述的方法,其中所述开口还包括:第三部分,从所述第二部分延伸,
其中所述第三部分在长度上比所述第一部分短。
35.如权利要求33所述的方法,其中当回流所述焊料镀层时,所述焊料镀层的在所述第一部分中的部分通过表面张力移到所述第二部分。
36.如权利要求33所述的方法,还包括:
利用通过回流所述焊料镀层形成的焊料层作为蚀刻掩模来蚀刻所述阻挡层。
37.如权利要求36所述的方法,还包括:
在所述阻挡层和所述金属层之间形成籽层,
其中所述籽层包括与所述金属层相同的材料。
38.如权利要求37所述的方法,其中当蚀刻所述阻挡层时,所述籽层与所述阻挡层一起被蚀刻。
39.如权利要求36所述的方法,还包括:
在回流所述焊料镀层之前,去除形成在所述籽层上的自然氧化物层,
其中所述自然氧化物层利用甲酸通过热处理工艺被去除。
40.如权利要求36所述的方法,其中蚀刻所述阻挡层包括进行湿蚀刻工艺,
其中当进行所述湿蚀刻工艺时,底切区域形成在所述金属层的侧壁和/或所述阻挡层的侧壁上。
41.一种半导体封装,包括:
半导体芯片,具有芯片焊盘;和
凸块结构,包括:
金属层图案,在所述芯片焊盘上;和
焊料层,设置在所述金属层图案上,所述焊料层包括从其突出以耦接到基板的接合部分;其中所述芯片焊盘的中心与所述焊料层的所述接合部分的中心间隔开。
42.如权利要求41所述的半导体封装,其中所述凸块结构具有不对称形状。
43.一种半导体封装,包括:
半导体芯片,具有芯片焊盘;和
凸块结构,在所述芯片焊盘上,所述凸块结构包括:
再分布层,耦接到所述芯片焊盘并延伸通过所述芯片焊盘的边缘;和
焊料层,布置在所述再分布层上,所述焊料层具有位于与所述芯片焊盘间隔开的区域中的突出部分。
44.如权利要求43所述的半导体封装,其中所述半导体芯片包括具有暴露所述芯片焊盘的开口的钝化层,并且其中所述凸块结构的所述再分布层设置在所述钝化层的最上表面上。
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Also Published As
Publication number | Publication date |
---|---|
CN103681556B (zh) | 2018-06-08 |
JP2014068015A (ja) | 2014-04-17 |
US20140084457A1 (en) | 2014-03-27 |
KR20140041975A (ko) | 2014-04-07 |
US9312213B2 (en) | 2016-04-12 |
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