KR20130135262A - 마이크로파 플라즈마를 사용한 유전체 막의 증착 방법 - Google Patents

마이크로파 플라즈마를 사용한 유전체 막의 증착 방법 Download PDF

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Publication number
KR20130135262A
KR20130135262A KR1020137014449A KR20137014449A KR20130135262A KR 20130135262 A KR20130135262 A KR 20130135262A KR 1020137014449 A KR1020137014449 A KR 1020137014449A KR 20137014449 A KR20137014449 A KR 20137014449A KR 20130135262 A KR20130135262 A KR 20130135262A
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South Korea
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gas
carbon
nitrogen
substrate
film
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KR1020137014449A
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English (en)
Korean (ko)
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히로유키 다카바
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도쿄엘렉트론가부시키가이샤
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Publication of KR20130135262A publication Critical patent/KR20130135262A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

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  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
KR1020137014449A 2010-11-04 2011-10-28 마이크로파 플라즈마를 사용한 유전체 막의 증착 방법 Ceased KR20130135262A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US41015510P 2010-11-04 2010-11-04
US61/410,155 2010-11-04
US13/073,957 2011-03-28
US13/073,957 US8962454B2 (en) 2010-11-04 2011-03-28 Method of depositing dielectric films using microwave plasma
PCT/US2011/058283 WO2012061232A2 (en) 2010-11-04 2011-10-28 Method of depositing dielectric films using microwave plasma

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187012370A Division KR101959183B1 (ko) 2010-11-04 2011-10-28 마이크로파 플라즈마를 사용한 유전체 막의 증착 방법

Publications (1)

Publication Number Publication Date
KR20130135262A true KR20130135262A (ko) 2013-12-10

Family

ID=46020025

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020137014449A Ceased KR20130135262A (ko) 2010-11-04 2011-10-28 마이크로파 플라즈마를 사용한 유전체 막의 증착 방법
KR1020187012370A Expired - Fee Related KR101959183B1 (ko) 2010-11-04 2011-10-28 마이크로파 플라즈마를 사용한 유전체 막의 증착 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020187012370A Expired - Fee Related KR101959183B1 (ko) 2010-11-04 2011-10-28 마이크로파 플라즈마를 사용한 유전체 막의 증착 방법

Country Status (5)

Country Link
US (1) US8962454B2 (enExample)
JP (1) JP6025735B2 (enExample)
KR (2) KR20130135262A (enExample)
TW (1) TWI476294B (enExample)
WO (1) WO2012061232A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2883971B1 (fr) 2005-03-31 2007-11-16 C2 Diagnostics Sa Dispositif optique d'analyse sanguine, appareil d'analyse equipe d'un tel dispositif
WO2012092020A2 (en) * 2010-12-30 2012-07-05 Applied Materials, Inc. Thin film deposition using microwave plasma
JP2013026265A (ja) * 2011-07-15 2013-02-04 Sony Corp プラズマ処理方法、プラズマ処理装置、及び、半導体装置の製造方法
JP5951443B2 (ja) * 2011-12-09 2016-07-13 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
US9177787B2 (en) * 2013-03-15 2015-11-03 Applied Materials, Inc. NH3 containing plasma nitridation of a layer of a three dimensional structure on a substrate
KR102458923B1 (ko) 2016-02-01 2022-10-25 삼성전자주식회사 집적회로 소자 및 그 제조 방법
JP6777614B2 (ja) 2017-09-26 2020-10-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
US11075113B2 (en) * 2018-06-29 2021-07-27 Taiwan Semiconductor Manufacturing Co., Ltd. Metal capping layer and methods thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003027238A (ja) * 2001-07-09 2003-01-29 Canon Inc 堆積膜形成方法
US7078336B2 (en) 2003-11-19 2006-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for fabricating a copper barrier layer with low dielectric constant and leakage current
US7163877B2 (en) * 2004-08-18 2007-01-16 Tokyo Electron Limited Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing
JP4149427B2 (ja) 2004-10-07 2008-09-10 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
JP5121698B2 (ja) 2006-03-06 2013-01-16 東京エレクトロン株式会社 プラズマ処理装置
KR101240842B1 (ko) * 2006-07-28 2013-03-08 도쿄엘렉트론가부시키가이샤 마이크로파 플라즈마원 및 플라즈마 처리장치
US7923819B2 (en) 2006-11-09 2011-04-12 National Iniversity Corporation Tohoku University Interlayer insulating film, wiring structure and electronic device and methods of manufacturing the same
US8197913B2 (en) 2007-07-25 2012-06-12 Tokyo Electron Limited Film forming method for a semiconductor
EP2105957A3 (en) 2008-03-26 2011-01-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate and method for manufacturing semiconductor device
JP2010219112A (ja) * 2009-03-13 2010-09-30 Tokyo Electron Ltd アモルファスハイドロカーボンナイトライド（ａ−ＣＮ：Ｈｘ）膜の成膜方法、有機ＥＬデバイスおよびその製造方法

Also Published As

Publication number Publication date
US20120115334A1 (en) 2012-05-10
JP2013546182A (ja) 2013-12-26
TWI476294B (zh) 2015-03-11
WO2012061232A3 (en) 2012-06-28
WO2012061232A2 (en) 2012-05-10
KR20180049229A (ko) 2018-05-10
KR101959183B1 (ko) 2019-03-15
US8962454B2 (en) 2015-02-24
TW201229288A (en) 2012-07-16
JP6025735B2 (ja) 2016-11-16

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