KR20130092377A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20130092377A
KR20130092377A KR1020127019037A KR20127019037A KR20130092377A KR 20130092377 A KR20130092377 A KR 20130092377A KR 1020127019037 A KR1020127019037 A KR 1020127019037A KR 20127019037 A KR20127019037 A KR 20127019037A KR 20130092377 A KR20130092377 A KR 20130092377A
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KR
South Korea
Prior art keywords
semiconductor device
type
region
silicon carbide
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Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
KR1020127019037A
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English (en)
Korean (ko)
Inventor
도루 히요시
게이지 와다
다케요시 마스다
히로무 시오미
Original Assignee
스미토모덴키고교가부시키가이샤
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Publication of KR20130092377A publication Critical patent/KR20130092377A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01366—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the semiconductor being silicon carbide

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020127019037A 2010-07-26 2011-06-29 반도체 장치 Withdrawn KR20130092377A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2010-167004 2010-07-26
JP2010167004 2010-07-26
JPJP-P-2011-012510 2011-01-25
JP2011012510A JP5699628B2 (ja) 2010-07-26 2011-01-25 半導体装置
PCT/JP2011/064897 WO2012014617A1 (ja) 2010-07-26 2011-06-29 半導体装置

Publications (1)

Publication Number Publication Date
KR20130092377A true KR20130092377A (ko) 2013-08-20

Family

ID=45492856

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127019037A Withdrawn KR20130092377A (ko) 2010-07-26 2011-06-29 반도체 장치

Country Status (8)

Country Link
US (1) US20120018743A1 (https=)
EP (1) EP2600402A4 (https=)
JP (1) JP5699628B2 (https=)
KR (1) KR20130092377A (https=)
CN (1) CN103168361A (https=)
CA (1) CA2796857A1 (https=)
TW (1) TW201210025A (https=)
WO (1) WO2012014617A1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8674439B2 (en) 2010-08-02 2014-03-18 Microsemi Corporation Low loss SiC MOSFET
JP5668576B2 (ja) * 2011-04-01 2015-02-12 住友電気工業株式会社 炭化珪素半導体装置
JP5751113B2 (ja) * 2011-09-28 2015-07-22 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP5811829B2 (ja) 2011-12-22 2015-11-11 住友電気工業株式会社 半導体装置の製造方法
CN102664192B (zh) * 2012-05-08 2015-03-11 北京大学 一种自适应复合机制隧穿场效应晶体管及其制备方法
JP2014007310A (ja) * 2012-06-26 2014-01-16 Sumitomo Electric Ind Ltd 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
JP6068042B2 (ja) 2012-08-07 2017-01-25 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2014038896A (ja) * 2012-08-13 2014-02-27 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
JP5646569B2 (ja) 2012-09-26 2014-12-24 株式会社東芝 半導体装置
US9515145B2 (en) * 2013-02-28 2016-12-06 Mitsubishi Electric Corporation Vertical MOSFET device with steady on-resistance
EP2976786A1 (en) * 2013-03-21 2016-01-27 Microsemi Corporation Sic power vertical dmos with increased safe operating area
JP6242633B2 (ja) * 2013-09-03 2017-12-06 株式会社東芝 半導体装置
WO2015072210A1 (ja) * 2013-11-13 2015-05-21 三菱電機株式会社 半導体装置の製造方法
JP6089015B2 (ja) * 2014-10-17 2017-03-01 株式会社東芝 半導体装置
CN107331603B (zh) * 2017-03-20 2020-05-01 中国电子科技集团公司第五十五研究所 一种碳化硅mosfet单胞结构的制造方法
CN108257872A (zh) * 2018-01-12 2018-07-06 北京品捷电子科技有限公司 一种SiC基DI-MOSFET的制备方法及SiC基DI-MOSFET
GB2589543A (en) * 2019-09-09 2021-06-09 Mqsemi Ag Method for forming a low injection P-type contact region and power semiconductor devices with the same
CN111129155A (zh) * 2019-12-25 2020-05-08 重庆伟特森电子科技有限公司 一种低栅漏电容碳化硅di-mosfet制备方法
TW202345215A (zh) * 2022-05-06 2023-11-16 國立陽明交通大學 垂直雙重擴散式金氧半場效電晶體的源極基體自動對準方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5877515A (en) * 1995-10-10 1999-03-02 International Rectifier Corporation SiC semiconductor device
JP2000106428A (ja) * 1998-09-28 2000-04-11 Toshiba Corp 半導体装置
DE60033829T2 (de) * 1999-09-07 2007-10-11 Sixon Inc. SiC-HALBLEITERSCHEIBE, SiC-HALBLEITERBAUELEMENT SOWIE HERSTELLUNGSVERFAHREN FÜR EINE SiC-HALBLEITERSCHEIBE
JP4843854B2 (ja) * 2001-03-05 2011-12-21 住友電気工業株式会社 Ｍｏｓデバイス
JP3697211B2 (ja) * 2002-01-10 2005-09-21 日本原子力研究所 炭化珪素半導体素子及びその絶縁膜の形成方法
US7221010B2 (en) * 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
JP5368140B2 (ja) * 2003-03-28 2013-12-18 三菱電機株式会社 ＳｉＣを用いた縦型ＭＯＳＦＥＴの製造方法
JP2005167035A (ja) * 2003-12-03 2005-06-23 Kansai Electric Power Co Inc:The 炭化珪素半導体素子およびその製造方法
JP4775102B2 (ja) * 2005-05-09 2011-09-21 住友電気工業株式会社 半導体装置の製造方法
US7727904B2 (en) * 2005-09-16 2010-06-01 Cree, Inc. Methods of forming SiC MOSFETs with high inversion layer mobility
JPWO2007086196A1 (ja) * 2006-01-30 2009-06-18 住友電気工業株式会社 炭化珪素半導体装置の製造方法
US20090134476A1 (en) * 2007-11-13 2009-05-28 Thunderbird Technologies, Inc. Low temperature coefficient field effect transistors and design and fabrication methods
JP5504597B2 (ja) * 2007-12-11 2014-05-28 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法
JP2009272365A (ja) * 2008-05-01 2009-11-19 Renesas Technology Corp 半導体装置の製造方法
JP5564781B2 (ja) * 2008-07-07 2014-08-06 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法
WO2010110253A1 (ja) * 2009-03-27 2010-09-30 住友電気工業株式会社 Ｍｏｓｆｅｔおよびｍｏｓｆｅｔの製造方法
KR102293198B1 (ko) * 2009-09-16 2021-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법

Also Published As

Publication number Publication date
TW201210025A (en) 2012-03-01
JP2012049491A (ja) 2012-03-08
EP2600402A4 (en) 2013-12-25
JP5699628B2 (ja) 2015-04-15
CN103168361A (zh) 2013-06-19
CA2796857A1 (en) 2012-02-02
WO2012014617A1 (ja) 2012-02-02
US20120018743A1 (en) 2012-01-26
EP2600402A1 (en) 2013-06-05

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