KR20120091173A - 광전자 소자 - Google Patents

광전자 소자 Download PDF

Info

Publication number
KR20120091173A
KR20120091173A KR1020127011272A KR20127011272A KR20120091173A KR 20120091173 A KR20120091173 A KR 20120091173A KR 1020127011272 A KR1020127011272 A KR 1020127011272A KR 20127011272 A KR20127011272 A KR 20127011272A KR 20120091173 A KR20120091173 A KR 20120091173A
Authority
KR
South Korea
Prior art keywords
carrier
optoelectronic
semiconductor chip
optoelectronic semiconductor
major surface
Prior art date
Application number
KR1020127011272A
Other languages
English (en)
Korean (ko)
Inventor
클라우스 뮐러
귄터 슈파트
지크프리트 헤르만
에발트 칼 미하엘 귄터
헤르베르트 브루너
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20120091173A publication Critical patent/KR20120091173A/ko

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0093Wafer bonding; Removal of the growth substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
KR1020127011272A 2009-09-30 2010-08-31 광전자 소자 KR20120091173A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102009047878 2009-09-30
DE102009047878.7 2009-09-30
DE102009051746A DE102009051746A1 (de) 2009-09-30 2009-11-03 Optoelektronisches Bauelement
DE102009051746.4 2009-11-03

Publications (1)

Publication Number Publication Date
KR20120091173A true KR20120091173A (ko) 2012-08-17

Family

ID=43662656

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127011272A KR20120091173A (ko) 2009-09-30 2010-08-31 광전자 소자

Country Status (8)

Country Link
US (1) US8853732B2 (fr)
EP (1) EP2483937B1 (fr)
JP (1) JP2013506976A (fr)
KR (1) KR20120091173A (fr)
CN (1) CN102576790B (fr)
DE (1) DE102009051746A1 (fr)
TW (1) TW201126775A (fr)
WO (1) WO2011039023A1 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011105010A1 (de) * 2011-06-20 2012-12-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung
DE102012200416B4 (de) 2012-01-12 2018-03-01 Osram Opto Semiconductors Gmbh Optoelektronisches modul und verfahren zur herstellung eines optoelektronischen moduls
DE102012101463A1 (de) 2012-02-23 2013-08-29 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und derart hergestelltes optoelektronisches Bauelement
DE102012108160A1 (de) 2012-09-03 2014-03-06 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102014101492A1 (de) 2014-02-06 2015-08-06 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102014101489B4 (de) * 2014-02-06 2023-03-02 Pictiva Displays International Limited Verfahren zur Herstellung einer optoelektronischen Anordnung
DE102015208704A1 (de) * 2015-05-11 2016-11-17 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102015114010A1 (de) * 2015-08-24 2017-03-02 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement, Verfahren zur Herstellung eines optoelektronischen Bauelements und Verfahren zum Betrieb eines optoelektronischen Bauelements
DE102015118433A1 (de) * 2015-10-28 2017-05-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
KR102487685B1 (ko) * 2015-11-10 2023-01-16 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 및 이를 구비한 조명 장치
DE102016104383A1 (de) * 2016-03-10 2017-09-14 Osram Opto Semiconductors Gmbh Verfahren und optoelektronische Leuchtvorrichtung zum Beleuchten eines Gesichts einer Person sowie Kamera und mobiles Endgerät
DE102016108682A1 (de) * 2016-05-11 2017-11-16 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
DE102018101582B4 (de) * 2018-01-24 2022-10-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlung emittierende Vorrichtung
KR102567568B1 (ko) * 2018-04-06 2023-08-16 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 패키지
EP3591345B1 (fr) * 2018-07-02 2020-11-11 Dr. Johannes Heidenhain GmbH Procédé de fabrication d'une source lumineuse pour une unité de capteur de position d'un dispositif de mesure de position ainsi que dispositif de mesure de position

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI289944B (en) 2000-05-26 2007-11-11 Osram Opto Semiconductors Gmbh Light-emitting-diode-element with a light-emitting-diode-chip
JP2002335020A (ja) * 2001-05-10 2002-11-22 Nichia Chem Ind Ltd 発光装置
JP4876356B2 (ja) * 2001-09-05 2012-02-15 ソニー株式会社 回路素子内蔵基板の製造方法、並びに電気回路装置の製造方法
US8455994B2 (en) * 2002-01-31 2013-06-04 Imbera Electronics Oy Electronic module with feed through conductor between wiring patterns
DE10233050B4 (de) * 2002-07-19 2012-06-14 Osram Opto Semiconductors Gmbh Lichtquelle auf LED-Basis für die Erzeugung von Licht unter Ausnutzung des Farbmischprinzips
JP2004363279A (ja) * 2003-06-04 2004-12-24 Sony Corp 光電変換装置の製造方法、並びにその製造に用いる疑似ウェーハの製造方法
US7919787B2 (en) * 2003-06-27 2011-04-05 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Semiconductor device with a light emitting semiconductor die
JP4458804B2 (ja) * 2003-10-17 2010-04-28 シチズン電子株式会社 白色led
JP2005322722A (ja) * 2004-05-07 2005-11-17 Korai Kagi Kofun Yugenkoshi 発光ダイオード
CN101032034A (zh) * 2004-06-30 2007-09-05 克里公司 用于封装发光器件的芯片级方法和芯片级封装的发光器件
WO2006002607A2 (fr) 2004-06-30 2006-01-12 Osram Opto Semiconductors Gmbh Ensemble diode electroluminescente, appareil d'enregistrement optique et procede pour faire fonctionner de maniere pulsee au moins une diode electroluminescente
CN100433383C (zh) 2004-08-31 2008-11-12 丰田合成株式会社 光发射装置及其制造方法和光发射元件
JP2006100787A (ja) * 2004-08-31 2006-04-13 Toyoda Gosei Co Ltd 発光装置および発光素子
DE102004050371A1 (de) * 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer drahtlosen Kontaktierung
TW200637033A (en) * 2004-11-22 2006-10-16 Matsushita Electric Ind Co Ltd Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device
JP2006313825A (ja) * 2005-05-09 2006-11-16 Sony Corp 表示装置および表示装置の製造方法
US7754507B2 (en) 2005-06-09 2010-07-13 Philips Lumileds Lighting Company, Llc Method of removing the growth substrate of a semiconductor light emitting device
CN100472830C (zh) * 2005-08-25 2009-03-25 夏普株式会社 半导体发光器件制造方法
TWI307178B (en) 2006-03-24 2009-03-01 Advanced Optoelectronic Tech Package structure of led
TWI418054B (zh) * 2006-08-08 2013-12-01 Lg Electronics Inc 發光裝置封裝與製造此封裝之方法
KR101271225B1 (ko) * 2006-10-31 2013-06-03 삼성디스플레이 주식회사 발광 다이오드 칩 및 발광 다이오드 광원 모듈의 제조 방법
TWI320608B (en) * 2006-12-06 2010-02-11 Chipmos Technologies Inc Light emitting chip package and light source module
KR100947454B1 (ko) * 2006-12-19 2010-03-11 서울반도체 주식회사 다단 구조의 열전달 슬러그 및 이를 채용한 발광 다이오드패키지
US7964888B2 (en) * 2007-04-18 2011-06-21 Cree, Inc. Semiconductor light emitting device packages and methods
DE102007022947B4 (de) * 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
JP5158472B2 (ja) * 2007-05-24 2013-03-06 スタンレー電気株式会社 半導体発光装置
DE102007030129A1 (de) 2007-06-29 2009-01-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement
JP2009049267A (ja) * 2007-08-22 2009-03-05 Toshiba Corp 半導体発光素子及びその製造方法
JP2009117536A (ja) * 2007-11-05 2009-05-28 Towa Corp 樹脂封止発光体及びその製造方法
RU2489774C2 (ru) * 2007-11-29 2013-08-10 Нития Корпорейшн Светоизлучающее устройство и способ его изготовления
US20090173956A1 (en) * 2007-12-14 2009-07-09 Philips Lumileds Lighting Company, Llc Contact for a semiconductor light emitting device
TW201114003A (en) * 2008-12-11 2011-04-16 Xintec Inc Chip package structure and method for fabricating the same
US7838878B2 (en) * 2009-03-24 2010-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor-based sub-mounts for optoelectronic devices with conductive paths to facilitate testing and binning
CN102954401B (zh) * 2011-08-23 2015-01-14 松下电器产业株式会社 Led单元以及使用该led单元的照明装置

Also Published As

Publication number Publication date
TW201126775A (en) 2011-08-01
CN102576790B (zh) 2016-08-03
EP2483937B1 (fr) 2019-01-09
WO2011039023A1 (fr) 2011-04-07
EP2483937A1 (fr) 2012-08-08
US8853732B2 (en) 2014-10-07
US20120248492A1 (en) 2012-10-04
CN102576790A (zh) 2012-07-11
JP2013506976A (ja) 2013-02-28
DE102009051746A1 (de) 2011-03-31

Similar Documents

Publication Publication Date Title
KR20120091173A (ko) 광전자 소자
EP3454372B1 (fr) Diode électroluminescente
TWI446593B (zh) 光電半導體組件之製造方法及光電半導體組件
JP5727784B2 (ja) オプトエレクトロニクス部品の製造方法
TWI396309B (zh) 照明裝置
CN108987546B (zh) 发光二极管、发光二极管模块和制造发光二极管的方法
JP5355536B2 (ja) 光電素子および光電素子の製造方法
JP5615433B2 (ja) 発光素子、及び、発光素子の製造方法
TWI389328B (zh) 光電半導體構件及其製造方法
KR101642867B1 (ko) 광전자 반도체 컴포넌트
US20060118800A1 (en) Light emitting device package
US20160087161A1 (en) Lighting apparatus including an optoelectronic component
JP6862556B2 (ja) 半導体素子
US8487339B2 (en) Light-emitting diode chip package body and method for manufacturing same
KR101403639B1 (ko) 반도체 발광소자
JP2012507157A (ja) 半導体コンポーネント用の担体、半導体コンポーネントおよび担体の製造方法
JP2021518666A (ja) オプトエレクトロニクス部品およびオプトエレクトロニクス部品の製造方法
JP2013529841A (ja) オプトエレクトロニクス素子
CN110197864B (zh) 半导体发光器件及其制造方法
JP2019536280A (ja) 半導体素子パッケージ及びその製造方法
JP2012523108A (ja) オプトエレクトロニクス部品
KR100866879B1 (ko) 발광 소자 패키지 및 그 제조방법
EP2930749B1 (fr) Dispositif électroluminescent et son procédé de production
KR102329776B1 (ko) 금속 벌크를 포함하는 발광 소자
TWI407603B (zh) 發光元件封裝結構及其製程

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid