KR20120091173A - 광전자 소자 - Google Patents
광전자 소자 Download PDFInfo
- Publication number
- KR20120091173A KR20120091173A KR1020127011272A KR20127011272A KR20120091173A KR 20120091173 A KR20120091173 A KR 20120091173A KR 1020127011272 A KR1020127011272 A KR 1020127011272A KR 20127011272 A KR20127011272 A KR 20127011272A KR 20120091173 A KR20120091173 A KR 20120091173A
- Authority
- KR
- South Korea
- Prior art keywords
- carrier
- optoelectronic
- semiconductor chip
- optoelectronic semiconductor
- major surface
- Prior art date
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- 230000005693 optoelectronics Effects 0.000 title claims abstract description 257
- 239000004065 semiconductor Substances 0.000 claims abstract description 154
- 239000000463 material Substances 0.000 claims abstract description 49
- 238000001465 metallisation Methods 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 238000005219 brazing Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 57
- 238000005266 casting Methods 0.000 claims description 49
- 238000004519 manufacturing process Methods 0.000 claims description 28
- 239000004020 conductor Substances 0.000 claims description 23
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 239000000969 carrier Substances 0.000 claims description 12
- 229910000679 solder Inorganic materials 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000010292 electrical insulation Methods 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 15
- 238000012545 processing Methods 0.000 description 12
- 230000008878 coupling Effects 0.000 description 10
- 238000010168 coupling process Methods 0.000 description 10
- 238000005859 coupling reaction Methods 0.000 description 10
- 230000005855 radiation Effects 0.000 description 10
- 230000005670 electromagnetic radiation Effects 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 229910010293 ceramic material Inorganic materials 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000012512 characterization method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
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- 239000012876 carrier material Substances 0.000 description 2
- 150000002118 epoxides Chemical class 0.000 description 2
- 230000005499 meniscus Effects 0.000 description 2
- 229910001512 metal fluoride Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- GJNGXPDXRVXSEH-UHFFFAOYSA-N 4-chlorobenzonitrile Chemical compound ClC1=CC=C(C#N)C=C1 GJNGXPDXRVXSEH-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011990 functional testing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009047878 | 2009-09-30 | ||
DE102009047878.7 | 2009-09-30 | ||
DE102009051746A DE102009051746A1 (de) | 2009-09-30 | 2009-11-03 | Optoelektronisches Bauelement |
DE102009051746.4 | 2009-11-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20120091173A true KR20120091173A (ko) | 2012-08-17 |
Family
ID=43662656
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020127011272A KR20120091173A (ko) | 2009-09-30 | 2010-08-31 | 광전자 소자 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8853732B2 (fr) |
EP (1) | EP2483937B1 (fr) |
JP (1) | JP2013506976A (fr) |
KR (1) | KR20120091173A (fr) |
CN (1) | CN102576790B (fr) |
DE (1) | DE102009051746A1 (fr) |
TW (1) | TW201126775A (fr) |
WO (1) | WO2011039023A1 (fr) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011105010A1 (de) * | 2011-06-20 | 2012-12-20 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung |
DE102012200416B4 (de) | 2012-01-12 | 2018-03-01 | Osram Opto Semiconductors Gmbh | Optoelektronisches modul und verfahren zur herstellung eines optoelektronischen moduls |
DE102012101463A1 (de) | 2012-02-23 | 2013-08-29 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements und derart hergestelltes optoelektronisches Bauelement |
DE102012108160A1 (de) | 2012-09-03 | 2014-03-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
DE102014101492A1 (de) | 2014-02-06 | 2015-08-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
DE102014101489B4 (de) * | 2014-02-06 | 2023-03-02 | Pictiva Displays International Limited | Verfahren zur Herstellung einer optoelektronischen Anordnung |
DE102015208704A1 (de) * | 2015-05-11 | 2016-11-17 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
DE102015114010A1 (de) * | 2015-08-24 | 2017-03-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement, Verfahren zur Herstellung eines optoelektronischen Bauelements und Verfahren zum Betrieb eines optoelektronischen Bauelements |
DE102015118433A1 (de) * | 2015-10-28 | 2017-05-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
KR102487685B1 (ko) * | 2015-11-10 | 2023-01-16 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 및 이를 구비한 조명 장치 |
DE102016104383A1 (de) * | 2016-03-10 | 2017-09-14 | Osram Opto Semiconductors Gmbh | Verfahren und optoelektronische Leuchtvorrichtung zum Beleuchten eines Gesichts einer Person sowie Kamera und mobiles Endgerät |
DE102016108682A1 (de) * | 2016-05-11 | 2017-11-16 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement |
DE102018101582B4 (de) * | 2018-01-24 | 2022-10-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlung emittierende Vorrichtung |
KR102567568B1 (ko) * | 2018-04-06 | 2023-08-16 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 패키지 |
EP3591345B1 (fr) * | 2018-07-02 | 2020-11-11 | Dr. Johannes Heidenhain GmbH | Procédé de fabrication d'une source lumineuse pour une unité de capteur de position d'un dispositif de mesure de position ainsi que dispositif de mesure de position |
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TWI289944B (en) | 2000-05-26 | 2007-11-11 | Osram Opto Semiconductors Gmbh | Light-emitting-diode-element with a light-emitting-diode-chip |
JP2002335020A (ja) * | 2001-05-10 | 2002-11-22 | Nichia Chem Ind Ltd | 発光装置 |
JP4876356B2 (ja) * | 2001-09-05 | 2012-02-15 | ソニー株式会社 | 回路素子内蔵基板の製造方法、並びに電気回路装置の製造方法 |
US8455994B2 (en) * | 2002-01-31 | 2013-06-04 | Imbera Electronics Oy | Electronic module with feed through conductor between wiring patterns |
DE10233050B4 (de) * | 2002-07-19 | 2012-06-14 | Osram Opto Semiconductors Gmbh | Lichtquelle auf LED-Basis für die Erzeugung von Licht unter Ausnutzung des Farbmischprinzips |
JP2004363279A (ja) * | 2003-06-04 | 2004-12-24 | Sony Corp | 光電変換装置の製造方法、並びにその製造に用いる疑似ウェーハの製造方法 |
US7919787B2 (en) * | 2003-06-27 | 2011-04-05 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Semiconductor device with a light emitting semiconductor die |
JP4458804B2 (ja) * | 2003-10-17 | 2010-04-28 | シチズン電子株式会社 | 白色led |
JP2005322722A (ja) * | 2004-05-07 | 2005-11-17 | Korai Kagi Kofun Yugenkoshi | 発光ダイオード |
CN101032034A (zh) * | 2004-06-30 | 2007-09-05 | 克里公司 | 用于封装发光器件的芯片级方法和芯片级封装的发光器件 |
WO2006002607A2 (fr) | 2004-06-30 | 2006-01-12 | Osram Opto Semiconductors Gmbh | Ensemble diode electroluminescente, appareil d'enregistrement optique et procede pour faire fonctionner de maniere pulsee au moins une diode electroluminescente |
CN100433383C (zh) | 2004-08-31 | 2008-11-12 | 丰田合成株式会社 | 光发射装置及其制造方法和光发射元件 |
JP2006100787A (ja) * | 2004-08-31 | 2006-04-13 | Toyoda Gosei Co Ltd | 発光装置および発光素子 |
DE102004050371A1 (de) * | 2004-09-30 | 2006-04-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit einer drahtlosen Kontaktierung |
TW200637033A (en) * | 2004-11-22 | 2006-10-16 | Matsushita Electric Ind Co Ltd | Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device |
JP2006313825A (ja) * | 2005-05-09 | 2006-11-16 | Sony Corp | 表示装置および表示装置の製造方法 |
US7754507B2 (en) | 2005-06-09 | 2010-07-13 | Philips Lumileds Lighting Company, Llc | Method of removing the growth substrate of a semiconductor light emitting device |
CN100472830C (zh) * | 2005-08-25 | 2009-03-25 | 夏普株式会社 | 半导体发光器件制造方法 |
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TWI418054B (zh) * | 2006-08-08 | 2013-12-01 | Lg Electronics Inc | 發光裝置封裝與製造此封裝之方法 |
KR101271225B1 (ko) * | 2006-10-31 | 2013-06-03 | 삼성디스플레이 주식회사 | 발광 다이오드 칩 및 발광 다이오드 광원 모듈의 제조 방법 |
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KR100947454B1 (ko) * | 2006-12-19 | 2010-03-11 | 서울반도체 주식회사 | 다단 구조의 열전달 슬러그 및 이를 채용한 발광 다이오드패키지 |
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DE102007022947B4 (de) * | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
JP5158472B2 (ja) * | 2007-05-24 | 2013-03-06 | スタンレー電気株式会社 | 半導体発光装置 |
DE102007030129A1 (de) | 2007-06-29 | 2009-01-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement |
JP2009049267A (ja) * | 2007-08-22 | 2009-03-05 | Toshiba Corp | 半導体発光素子及びその製造方法 |
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US20090173956A1 (en) * | 2007-12-14 | 2009-07-09 | Philips Lumileds Lighting Company, Llc | Contact for a semiconductor light emitting device |
TW201114003A (en) * | 2008-12-11 | 2011-04-16 | Xintec Inc | Chip package structure and method for fabricating the same |
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CN102954401B (zh) * | 2011-08-23 | 2015-01-14 | 松下电器产业株式会社 | Led单元以及使用该led单元的照明装置 |
-
2009
- 2009-11-03 DE DE102009051746A patent/DE102009051746A1/de not_active Withdrawn
-
2010
- 2010-08-31 US US13/499,622 patent/US8853732B2/en not_active Expired - Fee Related
- 2010-08-31 WO PCT/EP2010/062733 patent/WO2011039023A1/fr active Application Filing
- 2010-08-31 KR KR1020127011272A patent/KR20120091173A/ko not_active Application Discontinuation
- 2010-08-31 EP EP10749639.0A patent/EP2483937B1/fr not_active Not-in-force
- 2010-08-31 CN CN201080044010.5A patent/CN102576790B/zh not_active Expired - Fee Related
- 2010-08-31 JP JP2012531310A patent/JP2013506976A/ja active Pending
- 2010-09-20 TW TW099131809A patent/TW201126775A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
TW201126775A (en) | 2011-08-01 |
CN102576790B (zh) | 2016-08-03 |
EP2483937B1 (fr) | 2019-01-09 |
WO2011039023A1 (fr) | 2011-04-07 |
EP2483937A1 (fr) | 2012-08-08 |
US8853732B2 (en) | 2014-10-07 |
US20120248492A1 (en) | 2012-10-04 |
CN102576790A (zh) | 2012-07-11 |
JP2013506976A (ja) | 2013-02-28 |
DE102009051746A1 (de) | 2011-03-31 |
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