JP2013529841A - オプトエレクトロニクス素子 - Google Patents
オプトエレクトロニクス素子 Download PDFInfo
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- JP2013529841A JP2013529841A JP2013514617A JP2013514617A JP2013529841A JP 2013529841 A JP2013529841 A JP 2013529841A JP 2013514617 A JP2013514617 A JP 2013514617A JP 2013514617 A JP2013514617 A JP 2013514617A JP 2013529841 A JP2013529841 A JP 2013529841A
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- 230000005693 optoelectronics Effects 0.000 title claims abstract description 131
- 239000004065 semiconductor Substances 0.000 claims abstract description 74
- 239000000463 material Substances 0.000 claims abstract description 25
- 239000004033 plastic Substances 0.000 claims abstract description 16
- 238000004382 potting Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 16
- -1 polyphenylene Polymers 0.000 claims description 5
- 229920000265 Polyparaphenylene Polymers 0.000 claims description 2
- 239000002245 particle Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000001746 injection moulding Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004071 soot Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000000414 obstructive effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Abstract
Description
支持体要素、特に支持体基板の方に向いたビーム発生半導体積層体、とりわけビーム発生エピタキシャル成長積層体の主要面に、前記半導体積層体内で生成される電磁ビームの少なくとも一部を当該半導体積層体内へ逆反射させる反射層が被着又は形成され、
前記薄膜発光ダイオードチップは、支持体要素の上に半導体積層体がエピタキシャル成長された成長基板の支持体要素ではなく、半導体積層体に事後的に固定された別個の支持体要素を有しており、
前記半導体積層体は、20μm以下の範囲、とりわけ10μm以下の範囲の厚さを有し、
前記半導体積層体は成長基板から開放されている。ここでの"…成長基板から開放されている…"とは、本願では、場合によって成長のために使用される成長基板が、半導体積層体から除去されていること、若しくはそれが少なくとも大幅に薄くなっていることを意味している。特にこの"大幅に薄い"とは、それ自体だけ、若しくは、エピタキシャル成長積層体と供にそれらだけ、では、自己支持できない位の薄さを指す。そのような大幅に薄くなった成長基板として残った残留部分は、とりわけそのような成長基板としての機能には不適切である。さらに、本発明では、前記半導体積層体が、その内部でほぼエルゴード的な光の分散を理想的に引き起こすような混合構造を備えた少なくとも1つの平面、すなわち可及的にエルゴード的分散特性を有する平面を備えた少なくとも1つの半導体層を含んでいる。
前記図面中、同じ要素、同種の要素、又は作用の同じ要素には、同じ参照符号が付されている。これらの図面とこれらの図面中に示されている要素のサイズ比はそれぞれ異なっており、必ずしも縮尺通りではない。それどころか、個々の要素は、見易くするために、及び/又は分かり易くするために、拡大して示されている場合もある。
Claims (15)
- オプトエレクトロニクス素子であって、
プリント基板(1)と、
オプトエレクトロニクス半導体チップ(2)と、
ケーシング体(3)とを有し、
前記プリント基板(1)は、チップ接続領域(10)を備えた上側(1a)を有しており、
前記オプトエレクトロニクス半導体チップ(2)は、前記チップ接続領域(10)に固定されており、
前記ケーシング体(3)は、前記プリント基板(1)の上側(1a)にて当該プリント基板(1)に固定され、さらに反射器領域(30)を備えている、オプトエレクトロニクス素子において、
前記反射器領域(30)が前記ケーシング体(3)において開口部(31)を含んでおり、該開口部(31)内には前記オプトエレクトロニクス半導体チップ(2)が配置されており、さらに、
前記ケーシング体(3)はプラスチック材料で形成されており、該プラスチック材料は前記反射器領域(30)において少なくとも所々で金属化されていることを特徴とする、オプトエレクトロニクス素子。 - 前記半導体チップ(2)は注封体(35)に埋め込まれており、該注封体(35)は白色、黒色又は有色に見え、この場合前記チップ接続領域(10)とは反対側のオプトエレクトロニクス半導体チップ(2)の表面が前記注封体(35)から露出している、請求項1記載のオプトエレクトロニクス素子。
- 前記プリント基板(1)は基体(11)を有しており、該基体(11)はプラスチック材料、とりわけポリフェニレンスルフィで形成されている、請求項1又は2記載のオプトエレクトロニクス素子。
- 前記プリント基板(1)の上側(1a)は、ワイヤ接続領域(12)を有しており、該ワイヤ接続領域(12)は前記チップ接続領域(10)から離間されており、
前記ケーシング体(3)は、ワイヤ領域(32)を有しており、該ワイヤ領域(32)は前記ケーシング体(3)において開口部(33)を含んでおり、該開口部(33)内には前記ワイヤ接続領域(12)が配置されており、前記ワイヤ領域(32)は反射器領域(30)から離間されている、請求項1から3いずれか1項記載のオプトエレクトロニクス素子。 - 前記オプトエレクトロニクス半導体チップ(2)と前記ワイヤ接続領域(12)に固定される接続ワイヤ(4)を有しており、この場合前記接続ワイヤ(4)は前記ケーシング体(3)において凹部(34)を通って案内されており、該凹部(34)は前記反射器領域(30)とワイヤ領域(32)とを相互に接続している、請求項4記載のオプトエレクトロニクス素子。
- 前記凹部(34)の底面(34a)において前記プリント基板(1)が所々で露出している、請求項5記載のオプトエレクトロニクス素子。
- 前記ケーシング体(3)は前記プリント基板(1)の上側(1a)において当該プリント基板(1)を、前記反射器領域(30)及び場合によりワイヤ領域(32)と凹部(34)まで完全に覆っている、請求項1から6いずれか1項記載のオプトエレクトロニクス素子。
- 前記ケーシング体(3)の側面(3c)は少なくとも所々で前記プリント基板(1)の側面(1c)と面一に終端している、請求項1から7いずれか1項記載のオプトエレクトロニクス素子。
- 前記ケーシング体(3)の基準面は、前記プリント基板(1)の基準面と同じ形を有している、請求項1から8いずれか1項記載のオプトエレクトロニクス素子。
- 前記ケーシング体(3)の基準面は、前記プリント基板(1)の基準面と同じ大きさを有している、請求項1から9いずれか1項記載のオプトエレクトロニクス素子。
- 前記反射器領域(30)はチップに近い側の反射器開口部(30a)とチップから遠い側の反射器開口部(30b)とを含んでおり、
前記反射器領域(30)の開口部(31)は、前記チップから遠い側の反射器開口部(30b)から前記チップに近い側の反射器開口部(30a)まで先細になっており、さらに
前記反射器領域の少なくとも1つの反射器面(30c)は、前記チップに近い反射器開口部(30a)と前記チップから遠い反射器開口部(30b)とを相互に接続しており、この場合前記反射器面(30c)は、少なくとも所々で金属化された前記ケーシング体(3)の一部によって形成されている、請求項1から10いずれか1項記載のオプトエレクトロニクス素子。 - 前記ケーシング体(3)は、前記反射器面(30c)の領域だけが金属化されている、請求項11記載のオプトエレクトロニクス素子。
- 前記チップに近い反射器開口部(30a)は、前記オプトエレクトロニクス半導体チップ(2)の主表面(2a)の表面積よりも最大で4倍広い表面積を有している、請求項1から12いずれか1項記載のオプトエレクトロニクス素子。
- 前記プリント基板(1)はその上側(1a)とは反対側に下側(1b)を有しており、さらに前記下側(1b)には、表面実装のための素子接続領域(13)が形成されている、請求項1から13いずれか1項記載のオプトエレクトロニクス素子。
- 前記オプトエレクトロニクス素子は最大で1.00mmの厚さ(d)を有しており、前記プリント基板(1)は最大で0.35mmの厚さ(dl)を有しており、前記ケーシング体(3)は最大で0.65mmの厚さ(dg)を有している、請求項1から14いずれか1項記載のオプトエレクトロニクス素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102010023955.0 | 2010-06-16 | ||
DE102010023955A DE102010023955A1 (de) | 2010-06-16 | 2010-06-16 | Optoelektronisches Bauteil |
PCT/EP2011/058489 WO2011157515A1 (de) | 2010-06-16 | 2011-05-24 | Optoelektronisches bauteil |
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JP2013529841A true JP2013529841A (ja) | 2013-07-22 |
JP5832530B2 JP5832530B2 (ja) | 2015-12-16 |
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JP2013514617A Active JP5832530B2 (ja) | 2010-06-16 | 2011-05-24 | オプトエレクトロニクス素子 |
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US (1) | US8759862B2 (ja) |
EP (1) | EP2583319B1 (ja) |
JP (1) | JP5832530B2 (ja) |
KR (1) | KR101772722B1 (ja) |
CN (1) | CN102939670B (ja) |
DE (1) | DE102010023955A1 (ja) |
WO (1) | WO2011157515A1 (ja) |
Cited By (2)
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JP2019220608A (ja) * | 2018-06-21 | 2019-12-26 | 日亜化学工業株式会社 | 発光装置 |
JP2021044501A (ja) * | 2019-09-13 | 2021-03-18 | 日亜化学工業株式会社 | 発光装置 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102010023955A1 (de) * | 2010-06-16 | 2011-12-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
DE102011105010A1 (de) * | 2011-06-20 | 2012-12-20 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung |
DE102012107829B4 (de) | 2012-08-24 | 2024-01-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische Bauelemente und Verfahren zur Herstellung eines optoelektronischen Bauelements |
DE102013203759A1 (de) * | 2013-03-05 | 2014-09-11 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und elektronisches Gerät mit optoelektronischem Bauelement |
JP6261720B2 (ja) * | 2013-05-17 | 2018-01-17 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法 |
DE102014106020A1 (de) * | 2014-04-29 | 2015-10-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
DE102016106833A1 (de) | 2016-04-13 | 2017-10-19 | Osram Opto Semiconductors Gmbh | Bauelement mit Reflektor und Verfahren zur Herstellung von Bauelementen |
DE102018009292A1 (de) | 2018-11-26 | 2020-05-28 | Harting Ag | Elektrooptische Baugruppe mit Wärmeabführung sowie Verfahren zur Herstellung einer solchen Baugruppe |
DE102019216720A1 (de) * | 2019-10-30 | 2021-05-06 | Robert Bosch Gmbh | Verfahren und Vorrichtung zum Erzeugen eines Elektronikmoduls |
CN113078252B (zh) * | 2021-03-17 | 2022-11-01 | 江门市迪司利光电股份有限公司 | 一种led芯片的封装方法 |
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Also Published As
Publication number | Publication date |
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EP2583319A1 (de) | 2013-04-24 |
JP5832530B2 (ja) | 2015-12-16 |
DE102010023955A1 (de) | 2011-12-22 |
CN102939670B (zh) | 2015-11-25 |
EP2583319B1 (de) | 2019-08-07 |
WO2011157515A1 (de) | 2011-12-22 |
KR101772722B1 (ko) | 2017-08-29 |
US8759862B2 (en) | 2014-06-24 |
CN102939670A (zh) | 2013-02-20 |
US20130200411A1 (en) | 2013-08-08 |
KR20130080020A (ko) | 2013-07-11 |
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