JP5615433B2 - 発光素子、及び、発光素子の製造方法 - Google Patents
発光素子、及び、発光素子の製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 14
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- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 230000005855 radiation Effects 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000002310 reflectometry Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 229920001296 polysiloxane Polymers 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000000945 filler Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 239000004408 titanium dioxide Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000012778 molding material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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Description
・アクティブ領域を有する半導体積層体を含む半導体本体、とりわけエピタキシ積層体のうち、例えば基板27のような支持体要素の方向に向いた第1主面には、ミラー層が被着されているか、又は、ミラー層が、例えばブラッグミラーとして半導体積層体に組み込まれる形で形成されている。ミラー層は、半導体積層体にて生成される光の少なくとも一部を半導体積層体へと戻すよう反射するものである;
・半導体積層体は、20μm以下の範囲、特に10μmの範囲の厚さを有する;
及び/又は、
・半導体積層体は、理想的なケースにおいて、半導体積層体における光を近似的にエルゴード分布にさせる混合構造、つまりできるだけエルゴード的な確率の散乱特性を有する混合構造を有する少なくとも1つの平面を備える少なくとも1つの半導体層を含む。
Claims (14)
- 発光素子(1)において、
・第1主面(25)と、該第1主面(25)とは反対の側にある第2主面(26)と、光生成のために設けられたアクティブ領域(23)とを有する半導体チップ(2)と、
・前記半導体チップ(2)が前記第2主面(26)の側で固定されている支持体(5)と、
・前記半導体チップ(2)の前記第1主面(25)に配置されており、前記半導体チップ(2)から横方向に離間配置された出射側面(40)を形成している出射層(4)とを有しており、
前記出射層(4)の中には、前記半導体チップ(2)の方向に向かって先細りになった切欠部(45)が形成されており、
前記切欠部は、前記出射層を垂直方向に貫通して延在しており、
前記切欠部(45)は、動作中に、前記第1主平面(25)から出た光を、前記出射側面(40)の方向へと方向転換させ、
前記出射層の上には、第1コンタクト構造が形成されており、該第1コンタクト構造は、前記出射層の中に設けられた前記切欠部を貫通して、前記第1主平面の側で、前記半導体チップと電気的にコンタクトしており、
前記半導体チップは、横方向において、少なくとも部分的に反射層(31)によって取り囲まれている、
ことを特徴とする発光素子。 - 前記反射層は、電気絶縁性であり、少なくとも部分的に前記半導体チップに直接接している、
ことを特徴とする請求項1記載の発光素子。 - 前記出射層のうち前記反射層とは反対の側に、別の反射層(32)が配置されている、
ことを特徴とする請求項1又は2記載の発光素子。 - 前記第1コンタクト構造のうち前記半導体チップの方に向いた層は、前記別の反射層である、
ことを特徴とする請求項3記載の発光素子。 - 前記切欠部は、前記発光素子を上から見たときに漏斗状に形成されており、前記半導体チップの中央に配置されている、
ことを特徴とする請求項1から4のいずれか一項記載の発光素子。 - 前記出射側面は、前記発光素子を上から見たときに少なくとも部分的に湾曲されている、
ことを特徴とする請求項1から5のいずれか一項記載の発光素子。 - 発光素子(1)において、
・第1主面(25)と、該第1主面(25)とは反対の側にある第2主面(26)と、光生成のために設けられたアクティブ領域(23)とを有する半導体チップ(2)と、
・前記半導体チップ(2)が前記第2主面(26)の側で固定されている支持体(5)と、
・前記半導体チップ(2)の前記第1主面(25)に配置されており、前記半導体チップ(2)から横方向に離間配置された出射側面(40)を形成している出射層(4)とを有しており、
前記出射層(4)の中には、前記半導体チップ(2)の方向に向かって先細りになった切欠部(45)が形成されており、
前記切欠部は、前記出射層を垂直方向に貫通して延在しており、
前記切欠部(45)は、動作中に、前記第1主平面(25)から出た光を、前記出射側面(40)の方向へと方向転換させ、
前記出射層の上には、第1コンタクト構造が形成されており、該第1コンタクト構造は、前記出射層の中に設けられた前記切欠部を貫通して、前記第1主平面の側で、前記半導体チップと電気的にコンタクトしており、
少なくとも1つの第1発光素子(1A)及び第2発光素子(1B)は、垂直方向に互いに上下に重なり合って配置されている、
ことを特徴とする発光素子装置。 - 前記第1発光素子及び前記第2発光素子は、それぞれ、各出射層(4)のうち前記半導体チップ(2)とは反対の側に、第1コンタクト構造(61)を有しており、各発光素子のうち該第1コンタクト構造とは反対の側に、第2コンタクト構造(62)を有しており、
前記第1発光素子の前記第1コンタクト構造は、前記第2発光素子の前記第2コンタクト構造に導電的に接続されている、
ことを特徴とする請求項7記載の発光素子装置。 - 前記第1発光素子及び前記第2発光素子は、それぞれ1つの第1コンタクト構造(61)及び1つの第2コンタクト構造(62)を有しており、
前記第1コンタクト構造及び前記第2コンタクト構造は、互いに逆方向から前記アクティブ領域(23)へと電荷担体を注入するために設けられており、
前記第1コンタクト構造及び前記第2コンタクト構造は、垂直方向に、それぞれ前記支持体(5)及び前記出射層(4)を貫通して延在している、
ことを特徴とする請求項7記載の発光素子装置。 - 発光素子(1)において、
・第1主面(25)と、該第1主面(25)とは反対の側にある第2主面(26)と、光生成のために設けられたアクティブ領域(23)とを有する半導体チップ(2)と、
・前記半導体チップ(2)が前記第2主面(26)の側で固定されている支持体(5)と、
・前記半導体チップ(2)の前記第1主面(25)に配置されており、前記半導体チップ(2)から横方向に離間配置された出射側面(40)を形成している出射層(4)とを有しており、
前記出射層(4)の中には、前記半導体チップ(2)の方向に向かって先細りになった切欠部(45)が形成されており、
前記切欠部は、前記出射層を垂直方向に貫通して延在しており、
前記切欠部(45)は、動作中に、前記第1主平面(25)から出た光を、前記出射側面(40)の方向へと方向転換させ、
前記出射層の上には、第1コンタクト構造が形成されており、該第1コンタクト構造は、前記出射層の中に設けられた前記切欠部を貫通して、前記第1主平面の側で、前記半導体チップと電気的にコンタクトしており、
少なくとも1つの第1発光素子(1A)及び第2発光素子(1B)が、横方向に互いに隣り合って配置されており、
前記発光素子装置は、複数のコンタクト路(81)を有しており、
該コンタクト路(81)は、前記発光素子の相互に対向する両面に配置されており、前記発光素子を互いに電気的に並列に接続している、
ことを特徴とする発光素子装置。 - 発光素子(1)において、
・第1主面(25)と、該第1主面(25)とは反対の側にある第2主面(26)と、光生成のために設けられたアクティブ領域(23)とを有する半導体チップ(2)と、
・前記半導体チップ(2)が前記第2主面(26)の側で固定されている支持体(5)と、
・前記半導体チップ(2)の前記第1主面(25)に配置されており、前記半導体チップ(2)から横方向に離間配置された出射側面(40)を形成している出射層(4)とを有しており、
前記出射層(4)の中には、前記半導体チップ(2)の方向に向かって先細りになった切欠部(45)が形成されており、
前記切欠部は、前記出射層を垂直方向に貫通して延在しており、
前記切欠部(45)は、動作中に、前記第1主平面(25)から出た光を、前記出射側面(40)の方向へと方向転換させ、
前記出射層の上には、第1コンタクト構造が形成されており、該第1コンタクト構造は、前記出射層の中に設けられた前記切欠部を貫通して、前記第1主平面の側で、前記半導体チップと電気的にコンタクトしており、
前記発光素子は、2つのプレート(8)の間に配置されており、
これらのプレートのうちの少なくとも1つは、前記発光素子で生成された光に対して透明又は少なくとも半透明である、
ことを特徴とする発光素子装置。 - 複数の発光素子(1)の製造方法において、
a)複数の半導体チップ(2)を1つの支持体(5)の上に配置するステップと、
b)前記半導体チップ同士の間の中間スペース(55)の中に反射層(31)を被着させるステップと、
c)切欠部(25)を有する出射層(4)を形成するステップであって、前記切欠部(25)の中ではそれぞれ1つの半導体チップが露出しており、前記切欠部(25)は前記半導体チップの方向に先細りになっている、ステップと、
d)前記出射層を分離して、各発光素子が少なくとも1つの半導体チップと、前記出射層の中に設けられた1つの切欠部とを有するよう、複数の発光素子を個別化するステップ、
を有する方法。 - 前記切欠部を、コヒーレント光によって形成する、
ことを特徴とする請求項12記載の方法。 - 前記請求項1から6のいずれか一項に記載の発光素子を製造する、
ことを特徴とする請求項12又は13記載の方法。
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DE102010032041A DE102010032041A1 (de) | 2010-07-23 | 2010-07-23 | Strahlungsemittierendes Bauelement und Verfahren zur Herstellung von strahlungsemittierenden Bauelemnenten |
PCT/EP2011/062157 WO2012010519A1 (de) | 2010-07-23 | 2011-07-15 | Strahlungsemittierendes bauelement und verfahren zur herstellung von strahlungsemittierenden bauelementen |
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