JP2013532905A - 発光素子、及び、発光素子の製造方法 - Google Patents
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Abstract
・第1主面(25)と、該第1主面(25)とは反対の側にある第2主面(26)と、光生成のために設けられたアクティブ領域(23)とを有する半導体チップ(2)と、
・前記半導体チップ(2)が前記第2主面(26)の側で固定されている支持体(5)と、
・前記半導体チップ(2)の前記第1主面(25)に配置されており、前記半導体チップ(2)から横方向に離間配置された出射側面(40)を形成している出射層(4)とを有しており、
前記出射層(4)の中には、前記半導体チップ(2)の方向に向かって先細りになった切欠部(45)が形成されており、
前記切欠部(45)は、動作中に、前記第1主面(25)から出た光を、前記出射側面(40)の方向へと方向転換させる、
ことを特徴とする発光素子(1)。
Description
・アクティブ領域を有する半導体積層体を含む半導体本体、とりわけエピタキシ積層体のうち、例えば基板27のような支持体要素の方向に向いた第1主面には、ミラー層が被着されているか、又は、ミラー層が、例えばブラッグミラーとして半導体積層体に組み込まれる形で形成されている。ミラー層は、半導体積層体にて生成される光の少なくとも一部を半導体積層体へと戻すよう反射するものである;
・半導体積層体は、20μm以下の範囲、特に10μmの範囲の厚さを有する;
及び/又は、
・半導体積層体は、理想的なケースにおいて、半導体積層体における光を近似的にエルゴード分布にさせる混合構造、つまりできるだけエルゴード的な確率の散乱特性を有する混合構造を有する少なくとも1つの平面を備える少なくとも1つの半導体層を含む。
Claims (15)
- 発光素子(1)において、
・第1主面(25)と、該第1主面(25)とは反対の側にある第2主面(26)と、光生成のために設けられたアクティブ領域(23)とを有する半導体チップ(2)と、
・前記半導体チップ(2)が前記第2主面(26)の側で固定されている支持体(5)と、
・前記半導体チップ(2)の前記第1主面(25)に配置されており、前記半導体チップ(2)から横方向に離間配置された出射側面(40)を形成している出射層(4)とを有しており、
前記出射層(4)の中には、前記半導体チップ(2)の方向に向かって先細りになった切欠部(45)が形成されており、
前記切欠部(45)は、動作中に、前記第1主面(25)から出た光を、前記出射側面(40)の方向へと方向転換させる、
ことを特徴とする発光素子(1)。 - 前記半導体チップは、横方向において、少なくとも部分的に反射層(31)によって取り囲まれている、
ことを特徴とする請求項1記載の発光素子。 - 前記反射層は、電気絶縁性であり、少なくとも部分的に前記半導体チップに直接接している、
ことを特徴とする請求項2記載の発光素子。 - 前記出射層のうち前記反射層とは反対の側に、別の反射層(32)が配置されている、
ことを特徴とする請求項2又は3記載の発光素子。 - 前記出射層の上に第1コンタクト構造(61)が形成されており、
前記第1コンタクト構造(61)は、前記出射層の中に設けられた切欠部を貫通して、第1主面の側で、前記半導体チップと電気的にコンタクトしている、
ことを特徴とする請求項1から4のいずれか一項記載の発光素子。 - 前記切欠部は、前記発光素子を上から見たときに漏斗状に形成されており、前記半導体チップの中央に配置されている、
ことを特徴とする請求項1から5のいずれか一項記載の発光素子。 - 前記出射側面は、前記発光素子を上から見たときに少なくとも部分的に湾曲されている、
ことを特徴とする請求項1から6のいずれか一項記載の発光素子。 - 請求項1から7のいずれか一項記載の発光素子を複数有する発光素子装置において、
少なくとも1つの第1発光素子(1A)及び第2発光素子(1B)は、垂直方向に互いに上下に重なり合って配置されている、
ことを特徴とする発光素子装置。 - 前記第1発光素子及び前記第2発光素子は、それぞれ、各出射層(4)のうち前記半導体チップ(2)とは反対の側に、第1コンタクト構造(61)を有しており、各発光素子のうち該第1コンタクト構造とは反対の側に、第2コンタクト構造(62)を有しており、
前記第1発光素子の前記第1コンタクト構造は、前記第2発光素子の前記第2コンタクト構造に導電的に接続されている、
ことを特徴とする請求項8記載の発光素子装置。 - 前記第1発光素子及び前記第2発光素子は、それぞれ1つの第1コンタクト構造(61)及び1つの第2コンタクト構造(62)を有しており、
前記第1コンタクト構造及び前記第2コンタクト構造は、互いに逆方向から前記アクティブ領域(23)へと電荷担体を注入するために設けられており、
前記第1コンタクト構造及び前記第2コンタクト構造は、垂直方向に、それぞれ前記支持体(5)及び前記出射層(4)を貫通して延在している、
ことを特徴とする請求項8記載の発光素子装置。 - 請求項1から7のいずれか一項記載の発光素子を複数有する発光素子装置において、
少なくとも1つの第1発光素子(1A)及び第2発光素子(1B)が、横方向に互いに隣り合って配置されており、
前記発光素子装置は、複数のコンタクト路(81)を有しており、
該コンタクト路(81)は、前記発光素子の相互に対向する両面に配置されており、前記発光素子を互いに電気的に並列に接続している、
ことを特徴とする発光素子装置。 - 請求項1から7のいずれか一項記載の発光素子を複数有する発光素子装置において、
前記発光素子は、2つのプレート(8)の間に配置されており、
これらのプレートのうちの少なくとも1つは、前記発光素子で生成された光に対して透明又は少なくとも半透明である、
ことを特徴とする発光素子装置。 - 複数の発光素子(1)の製造方法において、
a)複数の半導体チップ(2)を1つの支持体(5)の上に配置するステップと、
b)前記半導体チップ同士の間の中間スペース(55)の中に反射層(31)を被着させるステップと、
c)切欠部(25)を有する出射層(4)を形成するステップであって、前記切欠部(25)の中ではそれぞれ1つの半導体チップが露出しており、前記切欠部(25)は前記半導体チップの方向に先細りになっている、ステップと、
d)前記出射層を分離して、各発光素子が少なくとも1つの半導体チップと、前記出射層の中に設けられた1つの切欠部とを有するよう、複数の発光素子を個別化するステップ、
を有する方法。 - 前記切欠部を、コヒーレント光によって形成する、
ことを特徴とする請求項13記載の方法。 - 前記請求項1から7のいずれか一項に記載の発光素子を製造する、
ことを特徴とする請求項13又は14記載の方法。
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DE102010032041A DE102010032041A1 (de) | 2010-07-23 | 2010-07-23 | Strahlungsemittierendes Bauelement und Verfahren zur Herstellung von strahlungsemittierenden Bauelemnenten |
DE102010032041.2 | 2010-07-23 | ||
PCT/EP2011/062157 WO2012010519A1 (de) | 2010-07-23 | 2011-07-15 | Strahlungsemittierendes bauelement und verfahren zur herstellung von strahlungsemittierenden bauelementen |
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US (1) | US9159889B2 (ja) |
EP (1) | EP2596534B1 (ja) |
JP (1) | JP5615433B2 (ja) |
KR (1) | KR101830275B1 (ja) |
CN (1) | CN103038903B (ja) |
DE (1) | DE102010032041A1 (ja) |
TW (1) | TW201220545A (ja) |
WO (1) | WO2012010519A1 (ja) |
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- 2011-07-15 KR KR1020137004519A patent/KR101830275B1/ko active IP Right Grant
- 2011-07-15 CN CN201180036037.4A patent/CN103038903B/zh not_active Expired - Fee Related
- 2011-07-15 EP EP11739022.9A patent/EP2596534B1/de not_active Not-in-force
- 2011-07-15 US US13/811,846 patent/US9159889B2/en not_active Expired - Fee Related
- 2011-07-15 JP JP2013521057A patent/JP5615433B2/ja not_active Expired - Fee Related
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Cited By (6)
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JP2018518049A (ja) * | 2015-05-13 | 2018-07-05 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 光電子半導体構成部品および光電子半導体構成部品を製造する方法 |
US10381391B2 (en) | 2015-05-13 | 2019-08-13 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component |
KR20190092556A (ko) * | 2016-12-15 | 2019-08-07 | 루미리즈 홀딩 비.브이. | 높은 근거리 콘트라스트 비를 갖는 led 모듈 |
JP2020502795A (ja) * | 2016-12-15 | 2020-01-23 | ルミレッズ ホールディング ベーフェー | 高い近接場コントラスト比を有するledモジュール |
JP2023009160A (ja) * | 2016-12-15 | 2023-01-19 | ルミレッズ ホールディング ベーフェー | 高い近接場コントラスト比を有するledモジュール |
KR102519814B1 (ko) * | 2016-12-15 | 2023-04-10 | 루미리즈 홀딩 비.브이. | 높은 근거리 콘트라스트 비를 갖는 led 모듈 |
Also Published As
Publication number | Publication date |
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CN103038903A (zh) | 2013-04-10 |
KR101830275B1 (ko) | 2018-02-20 |
EP2596534A1 (de) | 2013-05-29 |
EP2596534B1 (de) | 2017-08-30 |
KR20130092567A (ko) | 2013-08-20 |
CN103038903B (zh) | 2017-03-01 |
JP5615433B2 (ja) | 2014-10-29 |
WO2012010519A1 (de) | 2012-01-26 |
US20130207139A1 (en) | 2013-08-15 |
TW201220545A (en) | 2012-05-16 |
DE102010032041A1 (de) | 2012-01-26 |
US9159889B2 (en) | 2015-10-13 |
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