JP2011119739A - 発光装置及びその製造方法 - Google Patents
発光装置及びその製造方法 Download PDFInfo
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- JP2011119739A JP2011119739A JP2010270340A JP2010270340A JP2011119739A JP 2011119739 A JP2011119739 A JP 2011119739A JP 2010270340 A JP2010270340 A JP 2010270340A JP 2010270340 A JP2010270340 A JP 2010270340A JP 2011119739 A JP2011119739 A JP 2011119739A
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- light emitting
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 229910052809 inorganic oxide Inorganic materials 0.000 claims abstract description 126
- 229920005989 resin Polymers 0.000 claims abstract description 125
- 239000011347 resin Substances 0.000 claims abstract description 125
- 239000000463 material Substances 0.000 claims description 127
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 62
- 239000008119 colloidal silica Substances 0.000 claims description 54
- 239000004065 semiconductor Substances 0.000 claims description 47
- 239000002245 particle Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 20
- 230000001788 irregular Effects 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 194
- 238000000034 method Methods 0.000 description 24
- 238000002347 injection Methods 0.000 description 14
- 239000007924 injection Substances 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- 238000005286 illumination Methods 0.000 description 11
- 239000002019 doping agent Substances 0.000 description 9
- 239000007788 liquid Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- -1 for example Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000003892 spreading Methods 0.000 description 5
- 230000007480 spreading Effects 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- 229920000106 Liquid crystal polymer Polymers 0.000 description 4
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 4
- 239000004954 Polyphthalamide Substances 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229920006375 polyphtalamide Polymers 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229920010524 Syndiotactic polystyrene Polymers 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910019897 RuOx Inorganic materials 0.000 description 1
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000012260 resinous material Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Led Devices (AREA)
Abstract
【解決手段】本発明に従う発光装置は、胴体と、上記胴体の上に発光素子と、上記胴体の上に上記発光素子と電気的に連結される導電部材と、上記発光素子を囲む樹脂物と、上記樹脂物の上に上記樹脂物より小さな屈折率を有する無機酸化物層と、を含む。
【選択図】図1
Description
(第1実施形態)
このような複数の層からなる無機酸化物層140によって、外部に向ける光の効率を増加させることができる。
(第2実施形態)
(第3実施形態)
(第4実施形態)
(第5実施形態)
(第6実施形態)
(第7実施形態)
(第8実施形態)
(第9実施形態)
(第10実施形態)
Claims (15)
- 胴体と、
前記胴体の上に発光素子と、
前記胴体の上に前記発光素子と電気的に連結される導電部材と、
前記発光素子を囲む樹脂物と、
前記樹脂物の上に前記樹脂物より小さな屈折率を有する無機酸化物層と、
を含むことを特徴とする、発光装置。 - 前記無機酸化物層は、屈折率が互いに異なる少なくとも第1無機酸化物層と第2無機酸化物層とを含むことを特徴とする、請求項1に記載の発光装置。
- 前記樹脂物の上に前記第1無機酸化物層が形成され、
前記第1無機酸化物層の上に前記第2無機酸化物層が形成され、
前記第2無機酸化物層の屈折率は前記第1無機酸化物層の屈折率より小さく形成されることを特徴とする、請求項2に記載の発光装置。 - 前記無機酸化物層は、コロイド粒子を含むことを特徴とする、請求項1に記載の発光装置。
- 前記無機酸化物層は、コロイドシリカ粒子を含むことを特徴とする、請求項4に記載の発光装置。
- 前記無機酸化物層の屈折率は、1〜1.5であることを特徴とする、請求項1に記載の発光装置。
- 前記樹脂物の表面には不規則な凹部が形成されることを特徴とする、請求項1に記載の発光装置。
- 前記無機酸化物層はコロイドシリカ粒子からなり、
前記コロイドシリカ粒子は前記凹部の内に形成されることを特徴とする、請求項7に記載の発光装置。 - 前記コロイドシリカ粒子は、前記胴体の上にも形成されることを特徴とする、請求項8に記載の発光装置。
- 前記胴体にキャビティが形成され、
前記キャビティの内に、前記発光素子、前記樹脂物、及び前記無機酸化物層が位置することを特徴とする、請求項1に記載の発光装置。 - 前記胴体にキャビティが形成され、
前記キャビティの内に前記発光素子及び前記樹脂物が位置し、
前記無機酸化物層は前記樹脂物及び前記胴体の上に形成されることを特徴とする、請求項1に記載の発光装置。 - 前記樹脂物がドーム形態を有することを特徴とする、請求項1に記載の発光装置。
- 前記発光素子は複数個が形成されることを特徴とする、請求項1に記載の発光装置。
- 前記発光素子は、伝導性支持基板、第2導電型半導体層、活性層、及び第1導電型半導体層を含むことを特徴とする、請求項1に記載の発光装置。
- 胴体と、前記胴体の上に発光素子と、前記胴体の上に前記発光素子と電気的に連結される導電部材と、前記発光素子を囲む樹脂物と、前記樹脂物の上に無機酸化物層と、を含む発光装置を製造する方法であって、
前記無機酸化物層は、前記樹脂物の上にコロイド粒子を注入して形成することを特徴とする、発光装置の製造方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0119429 | 2009-12-03 | ||
KR20090119429 | 2009-12-03 | ||
KR1020100020499A KR101028313B1 (ko) | 2009-12-03 | 2010-03-08 | 발광 장치 및 그 제조 방법 |
KR10-2010-0020499 | 2010-03-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2011119739A true JP2011119739A (ja) | 2011-06-16 |
Family
ID=44049913
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010270340A Pending JP2011119739A (ja) | 2009-12-03 | 2010-12-03 | 発光装置及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8507931B2 (ja) |
JP (1) | JP2011119739A (ja) |
KR (1) | KR101028313B1 (ja) |
CN (1) | CN102163681B (ja) |
TW (1) | TWI545802B (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013004901A (ja) * | 2011-06-21 | 2013-01-07 | Nippon Kasei Chem Co Ltd | Ledデバイス |
JP2017103492A (ja) * | 2017-03-07 | 2017-06-08 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US9691950B2 (en) | 2013-07-25 | 2017-06-27 | Nichia Corporation | Light emitting device and method of manufacturing light emitting device |
JP2017203096A (ja) * | 2016-05-11 | 2017-11-16 | 三菱電機株式会社 | コーティング組成物、照明装置、コーティング膜の敷設方法、および、照明装置の製造方法 |
JP2018010958A (ja) * | 2016-07-13 | 2018-01-18 | 日亜化学工業株式会社 | 発光装置およびその製造方法、ならびに表示装置 |
JP2018137473A (ja) * | 2018-04-13 | 2018-08-30 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP2019207993A (ja) * | 2018-05-30 | 2019-12-05 | シーシーエス株式会社 | Led発光装置 |
JP2020181995A (ja) * | 2020-07-21 | 2020-11-05 | 日亜化学工業株式会社 | 発光装置およびその製造方法、ならびに表示装置 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102956801B (zh) * | 2011-08-31 | 2016-07-20 | 晶元光电股份有限公司 | 波长转换结构及其制造方法,以及包含其的发光装置 |
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Also Published As
Publication number | Publication date |
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TW201126768A (en) | 2011-08-01 |
US8507931B2 (en) | 2013-08-13 |
US20110133218A1 (en) | 2011-06-09 |
CN102163681B (zh) | 2015-04-08 |
TWI545802B (zh) | 2016-08-11 |
KR101028313B1 (ko) | 2011-04-11 |
CN102163681A (zh) | 2011-08-24 |
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