200945633 六、發明說明： 【發明所屬之技術領域】 本發明，係有關於發光體及使用有此之半導體發光裝 置，特別是，係有關於具備有將從半導體發光元件之發光 層而朝其之面方向輻射的光變換爲側面方向之光的光路規 定構件之發光體、和使用有此之半導體發光裝置。 q 【先前技術】 於先前技術中，係提案有具備有將從半導體發光元件 之發光層而朝其之面方向輻射的光變換爲側面方向之光的 光路規定構件之發光體、和將此作爲光源而使用之半導體 發光裝置（參考專利文獻1、2、3)。 在專利文獻1中所揭示之技術，係在被形成爲杯狀之 下部鏡的內面中央部處設定LED晶片並藉由透明密封體 來密封，同時，在透明密封體之上部處配置具備有漏斗狀 ❹ 或是圓錐狀之反射面的上部鏡，而將從LED晶片所輻射 之光以及在下部鏡處所反射之光藉由上部鏡來作反射，並 使其朝向LED晶片之側面方向射出。 在專利文獻2中所揭示之技術，係在半導體基板之第 1主面上形成發光層，同時，在與第1主面相對向之第2 主面上，將從第1主面視之而爲末端擴廣之溝形成爲十字 狀，並將從發光層所輻射之光從溝面而取出，而將在發光 層處所被吸收之光的比例減少者。 在專利文獻3中所揭示之技術，係將於主面上形成有 200945633 發光部之半導體基板的側面形成爲以45度以上未滿90度 的角度而傾斜之傾斜面，並僅在傾斜面之其中一方設置背 面電極，而藉由不具備有背面電極之另外一方之傾斜面來 將從發光部所輻射之光取出者。 [專利文獻1]日本特開2006-216939號公報 [專利文獻2]日本特開2005-327979號公報 [專利文獻3]日本特開2006-286710號公報 【發明內容】 [發明所欲解決之課題] 然而，在專利文獻1中所記載之技術，由於係將被形 成爲杯狀之下部鏡與具備有漏斗狀或是圓錐狀之反射面的 上部鏡作爲必要之構成要件，因此，會有著裝置大型化、 厚型化以及高成本化的問題。 另一方面，在專利文獻2、3中所記載之技術，由於 係爲在半導體基板上直接形成溝或是傾斜面的構成，因此 ，製造係爲困難，而有著難以將良品以高良率來獲得的問 題。亦即是，作爲半導體發光元件之半導體基板，一般係 使用藍寶石，但是，由於藍寶石係爲高硬度且高脆性之材 料，因此，加工係爲困難，於其之加工中，係需要高度之 熟練度與慎重之加工程序，而難以將良品以高良率來獲得 。又，若是加工失敗，則半導體發光元件之本身會成爲不 良品，因此，損害係變大。 本發明，係爲了解決此種技術性課題而進行者，其目 -6- 200945633 的，係在於提供一種：小型且低價，而製造係爲容易的側 面放出型之發光體，以及使用有此之半導體發光裝置。 [用以解決課題之手段] 本發明，係爲了解決上述之課題，對於發光體，第1 ，係將其構成爲具備有：半導體發光元件，係在對於所發 光之光而爲透明的半導體基板之主面上形成發光層所成； 0 和透光性之光路規定構件，係於單面上形成有越接近開口 側則溝寬幅成爲越大之未端擴大的溝所成，並在與前述半 導體基板之前述主面相反側的面上接合與前述溝之形成面 相反側的面；和光反射部，係與前述光路規定構件一體化 或是另外地被形成，並將從前述發光層所輻射並到達了前 述溝之形成面處的光作反射。 若藉由此種構成，則由於係在半導體發光元件之與主 面爲相反側的面處，接合具備有末端擴廣之溝與光反射部 Q 的光路規定構件，因此，能夠將從發光層所輻射並入射至 半導體基板內之光，藉由光路規定構件來使其朝向側面方 向。而，由於僅需藉由在半導體發光元件之與主面爲相反 側的面上接合具備有光反射部之光路規定構件，即可得到 側面放出型之發光體，因此，相較於使用被立體性地作加 工之構件的情況，能夠謀求發光體之薄型化以及低成本化 。又，由於係並非對於半導體基板來施加加工，而係對於 與半導體發光元件分開所形成之光路規定構件來施加溝加 工，因此，藉由對光路規定構件之材料作適當選擇，能夠 -7- 200945633 使其之製造或是加工容易化，而成爲能夠以高良率來製作 發光體之良品。進而’就算是作爲光路規定構件而使用藍 寶石等之高硬度且高脆性之材料，而在加工中有所失敗的 情況時，亦由於並不會導致半導體發光元件之浪費，因此 ，發光體不會被高成本化，而能夠增加材料選擇上之自由 〇 本發明，相關於發光體，第2，係採用了以下之構成 :作爲前述第1發光體處之前述光反射部，而將金屬膜至 少形成在前述溝之內面處。 若藉由此種構成，則由於係可使用例如濺鑛或是真空 蒸鍍等的真空成膜法，來將所需要之金屬膜形成在所需要 之部分處，因此，能夠使光反射部之形成成爲容易。 本發明，相關於發光體，第3,係採用了以下之構成 :作爲前述第1發光體處之前述光反射部，而將於表面處 被形成有鏡面之反射鏡構件接合於前述溝之形成面處。 若藉由此種構成，則由於係不需要藉由真空成膜法來 形成光反射部，因此，能夠將發光體之製造更加容易化， 又，由於係能夠將藉由溝面所反射之光在發光體之側面方 向而取出，因此，能夠對光取出效率之降低作抑制。 本發明，相關於發光體，第4,係採用了以下之構成 :在前述第1乃至第3發光體中，將前述光路規定構件之 平面形狀設爲四角形，並在被作對向配置之二邊間的中央 部處，形成前述溝。 若藉由此種構成，則由於係在被形成爲四角形之光路 -8- 200945633 規定構件的相對向之二邊間的中央部處形成了溝，因此， 能夠得到將光從被與光路規定構件之溝平行配置的邊而朝 向外側而輻射的發光體。 本發明，相關於發光體，第5，係採用了以下之構成 :在前述第1乃至第3發光體中，將前述光路規定構件之 平面形狀設爲四角形，並在將對角作連結之線上形成前述 溝。 0 若藉由此種構成，則由於係在將被形成爲四角形之光 路規定構件的對角作連結之線上形成了溝，因此，能夠得 到將光從光路規定構件之對角而朝向外側而輻射的發光體 〇 本發明，相關於發光體，第6，係採用了以下之構成 :在前述第1乃至第5發光體中，前述光路規定構件，係 由玻璃或是樹脂材料所成。 作爲光路規定構件，若是使用玻璃或是樹脂材料，則 〇 在能夠降低材料費的同時，溝加工亦成爲容易，因此，能 夠使光路規定構件之製造成爲容易且低成本者。 另一方面’本發明，關於半導體發光裝置，第i，係 採用了以下之構成，具備有：配線基板，係被形成有所必 要之配線圖案；和半導體發光元件，係在對於所發光之光 而爲透明的半導體基板之主面上形成發光層所成，並將前 述主面朝向前述配線基板側地而被安裝在前述配線基板之 配線圖案形成面上；和透光性之光路規定構件，係於單面 上形成有越接近開口側則溝寬幅成爲越大之末端擴大的溝 -9- 200945633 所成，並在與前述主面相反側的面上接合與前述溝之形成 面相反側的面；和光反射部，係與前述光路規定構件一體 化或是另外地被形成，並將從前述發光層所輻射並到達了 前述溝之形成面處的光作反射。 若藉由此種構成，則由於係在配線基板上，將在半導 體基板之與主面爲相反側的面處接合具備有末端擴廣之溝 與光反射部的光路規定構件所成的半導體發光元件以面朝 下來作安裝，因此，能夠將從發光層所輻射並入射至半導 體基板內之光，藉由光路規定構件來使其朝向側面方向。 而，由於係由配線基板與半導體發光元件與光路規定構件 來構成半導體發光裝置，因此，構造係爲簡單，而能夠作 成薄型且低成本之半導體發光裝置。 本發明，關於半導體發光裝置，第2,係採用了以下 之構成，具備有：配線基板，係被形成有所必要之配線圖 案；和第1半導體發光元件，係在對於所發光之光而爲透 明的半導體基板之主面上形成發光層所成，並將與前述主 面爲相反側之面朝向前述配線基板側地而被安裝在前述配 線基板之配線圖案形成面上；和第2半導體發光元件，係 在半導體基板之主面上形成發光層所成，並將前述主面朝 向前述第1半導體發光元件側地而被安裝在前述第1半導 體發光元件上；和透光性之光路規定構件，係於單面上形 成有越接近開口側則溝寬幅成爲越大之末端擴大的溝所成 ，並在與前述第2半導體發光元件之前述主面相反側的面 上接合與前述溝之形成面相反側的面；和光反射部，係與 -10 - 200945633 前述光路規定構件一體化或是另外地被形成，並將從前述 發光層所輻射並到達了前述溝之形成面處的光作反射。 若藉由此種構成，則由於係在配線基板上將第1半導 體發光元件以面朝上而作安裝，同時，在該當第1半導體 發光元件之上面將第2半導體發光元件以面朝下而作安裝 ，且在該當第2半導體發光元件之與主面爲相反側的面上 接合光路規定構件，因此，能夠將從第1半導體發光元件 Q 之發光層而朝上輻射並入射至第2半導體發光元件之半導 體基板內的光、以及從第2半導體發光元件之發光層而輻 射並入射至第2半導體發光元件之半導體基板內的光，藉 由光路規定構件而使其朝向側面方向。又，由於係在配線 基板上將第1半導體發光元件與第2半導體發光元件作2 層重疊配置，因此，能夠將每單位面積之半導體發光元件 的安裝數提升，而能夠將半導體發光裝置之全輻射通量以 及側面亮度提升。[Technical Field] The present invention relates to an illuminant and a semiconductor light-emitting device using the same, and more particularly to a luminescent layer including a semiconductor light-emitting device. The light radiated in the plane direction is converted into an illuminant of a light path defining member of the light in the side direction, and a semiconductor light emitting device using the same. [Prior Art] In the prior art, an illuminator having an optical path defining member that converts light radiated from the light-emitting layer of the semiconductor light-emitting element toward the surface direction is defined as an optical path defining member, and A semiconductor light-emitting device used for a light source (refer to Patent Documents 1, 2, and 3). The technique disclosed in Patent Document 1 sets an LED wafer at a central portion of an inner surface formed as a cup-shaped lower mirror and is sealed by a transparent sealing body, and is provided at an upper portion of the transparent sealing body. The funnel-shaped 或是 or the upper mirror of the conical reflecting surface, the light radiated from the LED chip and the light reflected at the lower mirror are reflected by the upper mirror and emitted toward the side of the LED chip. According to the technique disclosed in Patent Document 2, a light-emitting layer is formed on the first main surface of the semiconductor substrate, and the second main surface facing the first main surface is viewed from the first main surface. The groove for the end expansion is formed in a cross shape, and the light radiated from the light-emitting layer is taken out from the groove surface, and the ratio of the light absorbed at the light-emitting layer is reduced. According to the technique disclosed in Patent Document 3, the side surface of the semiconductor substrate on which the light-emitting portion of 200945633 is formed on the main surface is formed as an inclined surface which is inclined at an angle of not more than 90 degrees and not more than 90 degrees, and is only in the inclined surface. One of them is provided with a back electrode, and the light radiated from the light-emitting portion is taken out by not including the inclined surface of the other of the back electrodes. [Patent Document 1] JP-A-2006-216979 (Patent Document 2) JP-A-2005-327979 (Patent Document 3) JP-A-2006-286710 SUMMARY OF INVENTION [Problems to be Solved by the Invention] However, the technique described in Patent Document 1 has a device that is formed into a cup-shaped lower mirror and an upper mirror having a funnel-shaped or conical reflecting surface as a necessary constituent element. The problem of large size, thickening, and high cost. On the other hand, in the techniques described in Patent Documents 2 and 3, since the groove or the inclined surface is formed directly on the semiconductor substrate, it is difficult to manufacture the product, and it is difficult to obtain a good product at a high yield. The problem. In other words, sapphire is generally used as a semiconductor substrate of a semiconductor light-emitting device. However, since sapphire is a material having high hardness and high brittleness, processing is difficult, and in the processing thereof, high degree of proficiency is required. With careful processing procedures, it is difficult to obtain good products at high yields. Further, if the processing fails, the semiconductor light-emitting device itself becomes a defective product, and the damage is increased. The present invention has been made in order to solve such a technical problem, and a -6-200945633 is provided to provide a light-emitting body that is small in size and low in cost, and that is easy to manufacture and that is easy to use. Semiconductor light emitting device. [Means for Solving the Problem] In order to solve the above-described problems, the present invention is directed to a semiconductor substrate including a semiconductor light-emitting device and a semiconductor substrate that is transparent to light emitted by the light-emitting body. The light-emitting layer is formed on the main surface; 0 and the light-transmitting optical path defining member is formed on the single surface, and the groove which is wider toward the opening side is formed so that the groove width becomes larger and larger, and a surface of the semiconductor substrate opposite to the main surface is joined to a surface opposite to a surface on which the groove is formed; and a light reflecting portion is integrated with or separately formed from the optical path defining member, and is formed from the light emitting layer. Light that radiates and reaches the formation surface of the aforementioned groove is reflected. According to this configuration, since the optical path defining member including the groove having the end spread and the light reflecting portion Q is bonded to the surface of the semiconductor light emitting element opposite to the main surface, the light emitting layer can be removed from the light emitting layer. The light that is radiated and incident on the semiconductor substrate is directed toward the side surface by the optical path defining member. Further, since it is only necessary to bond the optical path defining member having the light reflecting portion to the surface opposite to the main surface of the semiconductor light emitting element, the side emitting type illuminator can be obtained, and therefore, the illuminating body is used in comparison with the use. In the case of a member that is processed as a material, it is possible to reduce the thickness and cost of the illuminator. Further, since the processing is not performed on the semiconductor substrate, the groove processing is performed on the optical path defining member formed separately from the semiconductor light emitting element. Therefore, by appropriately selecting the material of the optical path defining member, it is possible to -7-200945633 It is easy to manufacture or process, and it is a good product that can produce illuminants with high yield. Furthermore, even if a material having high hardness and high brittleness such as sapphire is used as the optical path defining member, and there is a failure in processing, the semiconductor light emitting element is not wasted, so that the illuminant does not In order to increase the cost of the material, the present invention can be increased in terms of material selection. In the second aspect, the light-emitting body is configured to have at least the metal film as the light-reflecting portion at the first light-emitting body. Formed at the inner surface of the aforementioned groove. According to this configuration, since a desired metal film can be formed in a desired portion by a vacuum film formation method such as sputtering or vacuum deposition, the light reflection portion can be formed. Forming becomes easy. According to the present invention, in relation to the illuminator, a third configuration is adopted in which the mirror member having the mirror surface formed on the surface is joined to the groove as the light reflecting portion at the first illuminator. Face to face. According to this configuration, since it is not necessary to form the light reflecting portion by the vacuum film forming method, the light-emitting body can be easily manufactured, and the light reflected by the groove surface can be formed. Since it is taken out in the side direction of the illuminator, the fall of the light extraction efficiency can be suppressed. According to a fourth aspect of the present invention, in the first to third luminous bodies, the planar shape of the optical path defining member is a quadrangle, and the two sides of the optical path defining member are disposed opposite to each other. The groove is formed at the central portion of the space. According to this configuration, since the groove is formed at the central portion between the opposite sides of the member defined by the optical path -8-200945633 formed in the square shape, the light can be obtained from the member to be defined by the optical path. An illuminator that radiates toward the outside while the grooves are arranged in parallel. According to a fifth aspect of the present invention, in the first to third illuminators, the planar shape of the optical path defining member is a quadrangle, and the diagonal line is connected. The aforementioned grooves are formed. According to this configuration, since grooves are formed on the line connecting the diagonals of the optical path defining members formed in a quadrangular shape, it is possible to obtain radiation from the diagonal of the optical path defining member toward the outside. In the present invention, in the first to fifth luminous bodies, the optical path defining member is made of glass or a resin material. When glass or a resin material is used as the optical path defining member, the material processing cost can be reduced, and the groove processing can be facilitated. Therefore, the manufacture of the optical path defining member can be easily and at low cost. On the other hand, the semiconductor light-emitting device of the present invention has the following configuration, and includes a wiring board which is formed with a necessary wiring pattern, and a semiconductor light-emitting element which emits light for the light. On the other hand, a light-emitting layer is formed on the main surface of the transparent semiconductor substrate, and the main surface is mounted on the wiring pattern forming surface of the wiring substrate toward the wiring board side; and the light-transmitting optical path defining member is provided. The groove is formed on the one surface, and the groove is formed closer to the opening side, and the groove width is increased. The groove is formed on the surface opposite to the main surface and joined to the groove forming surface. And the light reflecting portion is integrated with or separately formed from the optical path defining member, and reflects light radiated from the light emitting layer and reaching the formation surface of the groove. According to such a configuration, the semiconductor light-emitting member including the groove-forming groove and the light-reflecting portion is bonded to the surface of the semiconductor substrate opposite to the main surface of the semiconductor substrate. Since the element is mounted face down, the light radiated from the light-emitting layer and incident on the semiconductor substrate can be directed toward the side surface by the optical path defining member. Further, since the wiring light-emitting device and the semiconductor light-emitting device and the optical path defining member constitute the semiconductor light-emitting device, the structure is simple, and a thin and low-cost semiconductor light-emitting device can be manufactured. According to a second aspect of the present invention, in a semiconductor light-emitting device, a wiring board is provided, and a wiring pattern necessary for forming the wiring pattern is provided, and the first semiconductor light-emitting element is light for the light emitted. a light-emitting layer is formed on a main surface of the transparent semiconductor substrate, and a surface opposite to the main surface is mounted on the wiring pattern forming surface of the wiring substrate toward the wiring board side; and the second semiconductor light-emitting layer is formed. An element is formed by forming a light-emitting layer on a main surface of a semiconductor substrate, and the main surface is attached to the first semiconductor light-emitting element toward the first semiconductor light-emitting device side; and the light-transmitting optical path defining member a groove having a larger end width as the groove width increases toward the opening side, and is joined to the groove on the surface opposite to the main surface of the second semiconductor light-emitting device. Forming a surface opposite to the surface; and the light reflecting portion is integrated with or otherwise formed by the optical path defining member of -10 - 200945633, and is radiated from the light emitting layer And for reflecting light reaching the surface of the groove is formed at. According to this configuration, the first semiconductor light-emitting device is mounted on the wiring substrate with the surface facing upward, and the second semiconductor light-emitting device is placed face down on the upper surface of the first semiconductor light-emitting device. Since the optical path defining member is bonded to the surface of the second semiconductor light emitting element opposite to the main surface, the light emitting layer can be radiated upward from the light emitting layer of the first semiconductor light emitting element Q and incident on the second semiconductor. The light in the semiconductor substrate of the light-emitting element and the light radiated from the light-emitting layer of the second semiconductor light-emitting element and incident on the semiconductor substrate of the second semiconductor light-emitting element are directed to the side surface direction by the optical path defining member. In addition, since the first semiconductor light-emitting device and the second semiconductor light-emitting device are arranged in two layers on the wiring board, the number of semiconductor light-emitting elements per unit area can be increased, and the semiconductor light-emitting device can be completed. Radiant flux and side brightness increase.
GG
[發明之效果] 本發明之發光體，由於係具備有：半導體發光元件， 係在對於所發光之光而爲透明的半導體基板之主面上形成 發光層所成；和透光性之光路規定構件，係於單面上形成 有越接近開口側則溝寬幅成爲越大之末端擴大的溝所成， 並在與前述半導體基板之前述主面相反側的面上接合與前 述溝之形成面相反側的面；和光反射部，係與前述光路規 定構件一體化或是另外地被形成，並將從前述發光層所輻 -11 - 200945633 射並到達了前述溝之形成面處的光作反射’因此，此些之 各構件的製造係爲容易，且亦能夠減少構件數量，而能夠 謀求側面放出型之發光體的薄型化以及低成本化。 本發明之半導體發光裝置’由於係在配線基板上安裝 有發光體，且該發光體之構成’係具備有：半導體發光元 件，係在對於所發光之光而爲透明的半導體基板之主面上 形成發光層所成；和透光性之光路規定構件，係於單面上 形成有越接近開口側則溝寬幅成爲越大之末端擴大的溝所 成，並在與前述半導體基板之前述主面相反側的面上接合 與前述溝之形成面相反側的面；和光反射部，係與前述光 路規定構件一體化或是另外地被形成，並將從前述發光層 所輻射並到達了前述溝之形成面處的光作反射，因此，構 成發光體之各構件的製造係爲容易，且亦能夠減少構件數 量，而能夠謀求側面放出型之半導體發光裝置的薄型化以 及低成本化。 【實施方式】 以下，根據圖1乃至圖6，對本發明之發光體的實施 型態作說明。圖1係爲第1實施型態的發光體之立體圖， 圖2係爲第2實施型態的發光體之立體圖，圖3係爲第3 實施型態的發光體之立體圖，圖4係爲第4實施型態的發 光體之立體圖，圖5係爲第5實施型態的發光體之立體圖 ，圖6係爲第6實施型態的發光體之立體圖》 如同圖1乃至圖6中所示一般，實施型態中之發光體 -12- 200945633 1A〜IF，係由半導體發光元件11、和被接合於半導體發 光元件11處之光路規定構件21、和被配置在光路規定構 件2 1之單面處的光反射部3 1所構成。 關於半導體發光元件11之構成，在各實施例中係爲 共通，而爲在平面形狀被形成爲四角形之藍寶石基板（半 導體基板）12的單面上，形成包含有發光層之所需要的 半導體層13所成。在半導體層13之層積構造以及構成半 Q 導體層13之半導體材料中，係並未特別作限定，而可適 用屬於公知範圍之任意的層積構造以及材質。作爲代表性 的半導體層材料，係有氮化鎵（GaN)。 光路規定構件21，例如係具有藍寶石、玻璃或是樹 脂等的對於從半導體發光元件11所放射而來之光的透過 性爲高的材料，並被形成爲與半導體發光元件11大致同 形狀同大小的四角形，而於其之單面上，係如圖1乃至圖 6中所示一般，以因應於各實施型態之態樣而被形成有越 〇 接近開口側則溝寬幅成爲越大之末端擴大的溝22。第1 實施型態之光路規定構件21，係如圖1中所示一般，爲 在被作對向配置之二邊間的中央部處而將V字形狀之溝 22形成爲一字狀者。溝22之兩端，係以到達另外之被作 對向配置的二邊處的方式而被形成。此事，針對其他實施 型態中之光路規定構件21，亦爲相同。第2實施型態之 光路規定構件21，係如圖2中所示一般，爲在被作對向 配置之二邊間的中央部、和同樣地被作對向配置之另外二 邊間的中央部處，而將V字形狀之溝22形成爲十字狀者 -13- 200945633 。第3實施型態之光路規定構件21，係如圖3中所示一 般，爲在將2個的對角中之其中一方的對角作連結之線上 ，而將V字形狀之溝22形成爲一字狀者。第4實施型態 之光路規定構件21，係如圖4中所示一般，爲在將其中 一方之對角作連結的線上以及將另外一方之對角作連結的 線上，而將V字形狀之溝22形成爲X字狀者。第5實施 型態之光路規定構件21，係如圖5中所示一般，爲將溝 22之剖面形狀形成爲拋物線狀者。另外，在圖5中，雖 _ 係例示在被作對向配置之二邊間的中央部處而被形成有一 條之拋物線形狀的溝22之實施型態，但是，亦可藉由在 圖2乃至圖4中之其他的型態來形成拋物線形狀之溝22 。溝22之形成方向以及數量，係因應於光之取出方位而 被作調整。 光反射部31，係可與光路規定構件21 —體地形成， 亦可與光路規定構件分開地形成。在前述之第1乃至第5 實施型態中的發光體1A〜1E中，光反射部31係與光路 ◎ 規定構件21 —體化形成。與此光路規定構件一體化之光 反射部31，係可藉由在光路規定構件21處之溝22的形 成面以及溝2 2之內面，將例如金、銀、鋁、鈦以及以此 些之金屬材料作爲主成分的合金等之光反射率爲大的金屬 膜作被覆而形成之。作爲金屬膜之形成方法，係可適用濺 鍍或是真空蒸鍍等之真空成膜法。 另一方面，在圖6中所示之第6實施型態的發光體 1 F中，作爲光反射部3 1，係將與光路規定構件2 1分開形 -14- 200945633 成之反射鏡構件，接合在光路規定構件21之溝形成面上 。作爲反射鏡構件31，係可使用由前述之金屬材料或是 合金材料所成的板材，亦可使用在由非反射性材料所成之 板材的表面上被覆了高反射性之金屬膜者。另外，在圖6 中，雖係例示在被作對向配置之二邊間的中央部處而被形 成有一條之V字形狀的溝22之光路規定構件21的溝形 成面處接合了反射鏡構件31所成的發光體1F，但是，亦 Q 可在圖2乃至圖5中所示的各型態中之被形成了 V字形 狀或是拋物線形狀的溝22之光路規定構件的溝形成面上 ，接合反射鏡構件3 1。 第1乃至第5實施型態之發光體1A〜1E，由於係將 從發光層而被輻射並透過藍寶石基板12而在光反射部31 處被反射之光，在藍寶石基板12與光反射部31之間作多 重反射，並於其之間而在溝22之內面處被反射而朝向藍 寶石基板12之側方方向進行，因此，能夠提升從側方向 Q 之光的取出效率。第6實施型態之發光體1F，雖然並未 在溝22之內面處設置光反射部31，但是，由於係可將在 此面處之以超過臨限角度之角度而入射的光作全反射，因 此，同樣的，能夠提升從側方向之光的取出效率。 接下來，針對被安裝有上述之發光體1的半導體發光 裝置之構成作說明。圖7,係爲第1實施型態之半導體發 光裝置的側面圖，圖8係爲第2實施型態之半導體發光裝 置的側面圖。 第1實施型態之半導體發光裝置41A，係如圖7中所 -15- 200945633 示一般，以在被形成有所需要之配線圖案的光反射性之配 線基板42的配線圖案形成面上，將前述之發光體1 A〜1F 作面朝下安裝一事爲特徵。構成發光體1A〜1F之半導體 發光元件11，係經由被形成在配線基板42處之配線圖案 43與突塊44而被作串聯連接。 另一方面，第2實施型態之半導體發光裝置41B，係 如圖8中所示一般，以在被形成有所需要之配線圖案的光 反射性之配線基板42的配線圖案形成面上，將由在平面 形狀被形成爲四角形之藍寶石基板12的單面上形成包含 發光層之所需要的半導體層13所成的複數個的（於圖8 之例中，係爲2個）第1半導體發光元件45作面朝上安 裝’同時’在該當複數個的第1半導體發光元件45的上 面，以橫跨相鄰接之2個的第1半導體發光元件45的方 式，來將前述實施型態之發光體1A〜1F作面朝下安裝一 事爲特徵。下段之第1半導體發光元件45,係經由被形 成在配線基板42上之配線圖案43與焊接導線46而被連 接，而’構成發光體1A〜1F之上段的半導體發光元件（ 第2半導體發光元件）n ’係經由第1半導體發光元件 45與突塊47而被作串聯連接。 另外’前述第1以及第2實施型態之半導體發光裝置 41A、41B’雖係僅具備有1個的發光體μ〜1F，但是， 針對發光體1A〜if之數量，係並未做任何限制，可因應 於必要’而安裝所需要之數量的發光體1A〜if。 第1實施型態之半導體發光裝置41A，由於係在配線 -16- 200945633 基板42上，將光路規定構件21設爲朝向上方，並將由半 導體發光元件11與光路規定構件21以及光反射部31所 成的發光體1A〜1F作了安裝，因此，能夠將從半導體發 光元件11之發光層而被輻射並入射至半導體發光元件之 藍寶石基板12內的光，藉由光路規定構件21而使其朝向 側面方向，並作爲側面放出型之半導體發光裝置而起作用 。而，此第1實施型態之半導體發光裝置41A，由於係經 0 由在配線基板42上安裝發光體1A〜1F而被構成，因此 ，構造係爲簡單，而能夠作成薄型且低成本之半導體發光 裝置。 第2實施型態之半導體發光裝置41B，由於係在配線 基板42上將第1半導體發光元件45以面朝上而作安裝， 同時，在該當第1半導體發光元件45之上面將構成發光 體1A〜1F之第2半導體發光元件11以面朝下而作安裝 ，因此，能夠將從第1半導體發光元件45之發光層而朝 Q 上輻射並入射至第2半導體發光元件11之半導體基板12 內的光、以及從第2半導體發光元件11之發光層而輻射 並入射至第2半導體發光元件11之半導體基板12內的光 ，藉由光路規定構件21而使其朝向側面方向，並作爲側 面放出型之半導體發光裝置而起作用。又，由於係在配線 基板42上將第1半導體發光元件45與第2半導體發光元 件11作2層重疊配置，因此，能夠將每單位面積之半導 體發光元件的安裝數提升，而能夠將半導體發光裝置之全 輻射通量以及側面亮度提升。 -17- 200945633 以下，將前述實施型態之半導體發光裝置的效果，與 比較例作對比而展示之。 於圖9中，展示關於實施型態之半導體發光裝置以及 比較例之半導體發光裝置的全輻射通量以及配光分布之模 擬結果。於此圖中，模式1，係爲將在半導體發光元件11 之上面處接合了不具備溝22以及光反射部31之高折射率 的玻璃板所成之發光體安裝在配線基板42上者，模式2 ，係爲將圖2中所示之發光體1B安裝在配線基板42上者 ，模式3,係爲將圖6中所示之發光體1F安裝在配線基 板42上者，模式4，係爲將圖4中所示之發光體1D安裝 在配線基板42上者，模式5，係將具備有在對角方向上 將2條的溝22形成爲X字狀的光路規定構件21，並在該 當光路規定構件21上作爲光反射部31而被接合有反射鏡 構件的發光體，安裝在配線基板42上者，模式6,係爲 將在模式1之玻璃板上被形成有由金屬膜所成之光反射部 3 1的發光體安裝在配線基板42上者，模式7，係爲將模 式1之發光體作表背面反轉並安裝在配線基板42上者。 故而，模式2、3、4、5係爲實施型態之半導體發光裝置 的模式，模式1、6、7係爲比較例之半導體發光裝置的模 式。另外，在模擬時，係設定爲：半導體發光元件11之 發光係爲綠色、光路規定構件2 1係爲折射率1 . 8之玻璃 、半導體發光元件11以及光路規定構件21之平面尺寸係 爲0.3mmx0.3mm，藍寶石基板12以及光路規定構件21 之厚度係爲〇·〇75ηιπι，半導體層13之厚度係爲0.010mm 200945633 ，配線基板42之光反射率係爲97%。 如圖9(a)中所示一般，全輻射通量最大者，係爲 比較例之模式7，但是，此半導體發光裝置，由於係如圖 9(b)中所示一般，朝向與主面相對向之方向的配光爲大 ，而朝向主面方向、亦即是朝向側方之配光係爲小，因此 ，係無法成爲側面放出型之半導體發光裝置。又，全輻射 通量爲第2大者，亦爲比較例之模式1的半導體發光裝置 φ ，但是，由於相同之理由，此半導體發光裝置亦無法成爲 側面放出型之半導體發光裝置。相對於此，對於側方之配 光爲大者，係爲實施型態之模式2〜5的半導體發光裝置 ，和比較例之模式6的半導體發光裝置，但是，於其中， 比較例之模式6的半導體發光裝置，由於全輻射通量係極 端的小，因此，係無法成爲實用性的側面放出型之半導體 發光裝置。其結果’由圖9(a) 、（b)之結果，可以得 知：由於對於側方之配光係爲大，且全輻射通量亦相對上 φ 爲較高，因此，實施型態之模式2〜5的半導體發光裝置 ，係適合於作爲實用性的側面放出型之半導體發光裝置。 另外，當代替V字形狀之溝22而形成了拋物線形狀之溝 2 2的情況時，亦能夠得到相同之結果。 接下來，於圖1〇乃至圖13中，針對被形成在光路規 定構件21處之溝22的深度（溝深）d以及溝22之內面 所成的角度（溝角度）19的最適値之模擬結果作展示。圖 10,係展示針對實施型態之模式2的半導體發光裝置而對 溝深d以及溝角度Θ作了各種變更的情況之資料，圖11 -19- 200945633 ’係展币針對實施型態之模式3的半導體發光裝置而對溝 深d以及溝角度0作了各種變更的情況之資料，圖1 2， 係展示針對實施型態之模式4的半導體發光裝置而對 '溝深 d以及溝角度0作了各種變更的情況之資料，圖13,係展 示針對實施型態之模式5的半導體發光裝置而對溝深d以 及溝角度0作了各種變更的情況之資料。 如同由圖10中可清楚得知一般，模式2之半導體發 光裝置，無關於溝角度0，若是溝深d變得越大，則大致 一律地全輻射通量爲增加。而後’在一定之溝深d處的全 輻射通量，係存在有因應於溝角度6>之有意差，在將溝角 度0設爲了 50〜60時’全幅射通量係變得最大。在實用 上’從全輻射通量之値來看，針對模式2之半導體發光裝 置，係以將溝角度0設爲60°±10°爲理想。 如同由圖11中可清楚得知一般，模式3之半導體發 光裝置，亦無關於溝角度Θ，若是溝深d變得越大，則大 致一律地全輻射通量爲增加。而後，在一定之溝深d處的 全輻射通量，係存在有因應於溝角度0之有意差，在將溝 角度0設爲了 120°時，全輻射通量係變得最大。在實用上 ’從全輻射通量之値來看，針對模式3之半導體發光裝置 ，係以將溝角度0設爲120°±10°爲理想。 如同由圖12中可清楚得知一般，模式4之半導體發 光裝置，除了溝角度0過大的情況之外，無關於溝角度0 ’若是溝深d變得越大，則大致一律地全輻射通量爲增加 。但是，關於在一定之溝深d處的全輻射通量，係存在有 -20- 200945633 因應於溝角度0之有意差，在將溝角度0設爲了 90°時， 全輻射通量係變得最大。在實用上，從全輻射通量之値來 看，針對模式4之半導體發光裝置，係以將溝角度0設爲 90°±10°爲理想。 如同由圖13中可清楚得知一般，模式5之半導體發 光裝置，除了溝角度0過大的情況之外，無關於溝角度0 ，若是溝深d變得越大，則大致一律地全輻射通量爲增加 0 。而後，在一定之溝深d處的全輻射通量，係存在有因應 於溝角度0之有意差，在將溝角度0設爲了 90°〜1 20°時 ，係可得到大的全輻射通量。 當溝角度0過小時之全輻射通量變小的原因，可以想 見，係因爲藉由溝22所反射之光係難以朝向半導體發光 裝置之側方，而成爲容易被封閉在光路規定構件21內之 故。另一方面，當溝角度Θ過大時之全輻射通量變小的原 因，可以想見，係因爲由於光路規定構件21全體性的變 〇 薄，而使得半導體發光裝置之側剖面積變小，而成爲容易 引起在側面處之全反射之故。 又，如同由模式2與模式3間之比較而可得知一般， 相較於在光路規定構件21之表面處作爲光反射構件31而 形成金屬膜的情況，係以在光路規定構件21之表面上作 爲光反射構件31而接合反射鏡構件的情況時，全輻射通 量係變大。此係因爲，當在光路規定構件21之表面處形 成了金屬膜的情況時，係在溝22內引起反射鏡反射所致 之吸收，相對於此，當在光路規定構件21之表面處接合 -21 - 200945633 反射鏡構件的情況時，可以想見，由於溝22之表面係爲 透明，而在該面處係容易產生全反射，因此，反射鏡反射 係被抑制之故。 接下來，於圖14中，展示將光路規定構件21之材質 變更爲藍寶石、折射率爲1.8之玻璃、折射率爲1.5之玻 璃的情況時之模擬結果。所使用之模式，係設爲實施型態 之模式2、模式3、模式4、模式5,並分別形成了最適當 之溝角度0的溝22。如同由圖14而可明顯得知一般，當 φ 對同一模式彼此作比較的情況時，相較於使用藍寶石製之 光路規定構件21的情況，係以使用玻璃製之光路規定構 件2 1的情況下全輻射通量爲變大，且對於側方之配光亦 變大。 接下來，在圖15中，展示將光路規定構件21之厚度 以及溝角度β作了各種變更的情況時之模擬結果。另外，[Effects of the Invention] The illuminator of the present invention includes a semiconductor light-emitting device formed by forming a light-emitting layer on a main surface of a semiconductor substrate transparent to light emitted; and an optical path for light transmittance The member is formed on a single surface with a groove whose width is increased toward the opening side, and the groove is formed on the surface opposite to the main surface of the semiconductor substrate. a surface on the opposite side; and a light reflecting portion that is integrated with or otherwise formed with the optical path defining member, and reflects light that is emitted from the illuminating layer -11 - 200945633 and reaches the forming surface of the groove Therefore, the manufacture of each of these members is easy, and the number of components can be reduced, and the thickness of the side-emitting type illuminator can be reduced and the cost can be reduced. In the semiconductor light-emitting device of the present invention, the light-emitting body is mounted on the wiring board, and the light-emitting body is configured to include a semiconductor light-emitting element on the main surface of the semiconductor substrate that is transparent to the light to be emitted. And forming a light-emitting layer; and a light-transmitting optical path defining member is formed on a single surface so that a groove having a wider groove width is formed closer to the opening side, and is formed on the semiconductor substrate a surface on the opposite side of the surface is joined to a surface opposite to the surface on which the groove is formed; and a light reflecting portion is integrated with or separately formed from the optical path defining member, and is radiated from the light emitting layer and reaches the groove Since the light at the surface of the formation is reflected, it is easy to manufacture the members constituting the illuminator, and the number of components can be reduced, and the semiconductor light-emitting device of the side-release type can be made thinner and lower in cost. [Embodiment] Hereinafter, an embodiment of an illuminator of the present invention will be described with reference to Figs. 1 to 6 . 1 is a perspective view of a light-emitting body of a first embodiment, FIG. 2 is a perspective view of a light-emitting body of a second embodiment, and FIG. 3 is a perspective view of a light-emitting body of a third embodiment, and FIG. FIG. 5 is a perspective view of the illuminant of the fifth embodiment, and FIG. 6 is a perspective view of the illuminator of the sixth embodiment, as shown in FIG. 1 to FIG. The light-emitting body -12-200945633 1A to IF in the embodiment is composed of a semiconductor light-emitting element 11 and an optical path defining member 21 joined to the semiconductor light-emitting element 11, and a single side of the optical path defining member 21; The light reflecting portion 31 is configured. The configuration of the semiconductor light-emitting device 11 is common to the respective embodiments, and is a semiconductor layer required to include a light-emitting layer on one surface of a sapphire substrate (semiconductor substrate) 12 having a square shape in a planar shape. 13 achievements. The laminated structure of the semiconductor layer 13 and the semiconductor material constituting the semi-Q conductor layer 13 are not particularly limited, and any laminated structure and material belonging to a known range can be used. As a representative semiconductor layer material, gallium nitride (GaN) is used. The optical path defining member 21 has, for example, a material having high permeability to light emitted from the semiconductor light emitting element 11 such as sapphire, glass, or resin, and is formed to have substantially the same shape and size as the semiconductor light emitting element 11. The square shape on the one side is generally as shown in FIG. 1 to FIG. 6, and the width of the groove becomes larger as it is formed closer to the opening side in accordance with the aspect of each embodiment. The end of the enlarged groove 22. As shown in Fig. 1, the optical path defining member 21 of the first embodiment has a V-shaped groove 22 formed in a straight shape at a central portion between the two sides which are opposed to each other. Both ends of the groove 22 are formed in such a manner as to reach the other two sides which are disposed oppositely. This matter is also the same for the optical path defining member 21 in other embodiments. The optical path defining member 21 of the second embodiment is generally shown in Fig. 2, and is located at a central portion between the two sides that are oppositely disposed, and at a central portion between the other two sides that are disposed oppositely in the same manner. The V-shaped groove 22 is formed into a cross-shaped person-13-200945633. The optical path defining member 21 of the third embodiment is generally formed as a line connecting the diagonals of one of the two diagonals as shown in FIG. 3, and the V-shaped groove 22 is formed as A word. The optical path defining member 21 of the fourth embodiment is generally a V-shaped wire on a line connecting the diagonals of one of the diagonal lines and the diagonal of the other one as shown in FIG. The groove 22 is formed in an X shape. The optical path defining member 21 of the fifth embodiment is generally formed as a parabolic shape in the cross-sectional shape of the groove 22 as shown in Fig. 5 . In addition, in FIG. 5, the embodiment of the groove 22 in which a parabolic shape is formed in the center portion between the two sides of the opposite arrangement is exemplified, but it can also be seen in FIG. The other forms in Figure 4 form a parabolic shaped groove 22. The direction and number of formation of the grooves 22 are adjusted in response to the direction in which the light is taken out. The light reflecting portion 31 may be formed integrally with the optical path defining member 21 or may be formed separately from the optical path defining member. In the illuminants 1A to 1E in the first to fifth embodiments described above, the light reflecting portion 31 is formed integrally with the optical path ◎ defining member 21. The light reflecting portion 31 integrated with the optical path defining member can be made of, for example, gold, silver, aluminum, titanium, and the like by the forming surface of the groove 22 at the optical path defining member 21 and the inner surface of the groove 22. The metal material is formed by coating a metal film having a large light reflectance such as an alloy as a main component. As a method of forming the metal film, a vacuum film formation method such as sputtering or vacuum evaporation can be applied. On the other hand, in the illuminator 1 F of the sixth embodiment shown in Fig. 6, as the light reflecting portion 31, a mirror member which is formed by separating the optical path defining member 21 from -14 to 200945633, It is joined to the groove forming surface of the optical path defining member 21. As the mirror member 31, a plate material made of the above-described metal material or alloy material can be used, and a highly reflective metal film coated on the surface of a plate material made of a non-reflective material can be used. In addition, in FIG. 6, the mirror member is joined to the groove forming surface of the optical path defining member 21 in which the V-shaped groove 22 is formed at the central portion between the opposite sides. The illuminant 1F formed by 31, but Q can be formed on the groove forming surface of the optical path defining member of the groove 22 formed in a V-shape or a parabolic shape in each of the types shown in FIG. 2 to FIG. The mirror member 31 is joined. The illuminants 1A to 1E of the first to fifth embodiments are light that is radiated from the luminescent layer and transmitted through the sapphire substrate 12 and reflected by the light reflecting portion 31, and the sapphire substrate 12 and the light reflecting portion 31. The multiple reflection between them is performed between the inner surface of the groove 22 and the lateral direction of the sapphire substrate 12, so that the light extraction efficiency from the side direction Q can be improved. In the illuminant 1F of the sixth embodiment, although the light reflecting portion 31 is not provided at the inner surface of the groove 22, it is possible to make the light incident at the surface at an angle exceeding the threshold angle. The reflection, therefore, can also improve the extraction efficiency of light from the side direction. Next, the configuration of the semiconductor light-emitting device to which the above-described light-emitting body 1 is mounted will be described. Fig. 7 is a side view of the semiconductor light-emitting device of the first embodiment, and Fig. 8 is a side view of the semiconductor light-emitting device of the second embodiment. In the semiconductor light-emitting device 41A of the first embodiment, as shown in FIG. 7-15-200945633, the wiring pattern forming surface of the wiring substrate 42 on which the light-reflective wiring pattern is formed is required. The aforementioned illuminants 1 A to 1F are characterized in that they are mounted face down. The semiconductor light-emitting elements 11 constituting the illuminants 1A to 1F are connected in series via the wiring patterns 43 formed on the wiring substrate 42 and the bumps 44. On the other hand, in the semiconductor light-emitting device 41B of the second embodiment, as shown in FIG. 8, the wiring pattern forming surface of the wiring substrate 42 on which the light-reflective wiring pattern is formed is required to be A plurality of (for example, two in the example of FIG. 8) first semiconductor light-emitting elements formed by forming a semiconductor layer 13 required for a light-emitting layer on one surface of a sapphire substrate 12 having a square shape in plan view. The surface of the first semiconductor light-emitting device 45 of the plural plurality of semiconductor light-emitting elements 45 is mounted on the upper surface of the plurality of first semiconductor light-emitting elements 45 so as to face the first semiconductor light-emitting elements 45 adjacent to each other. The body 1A to 1F are characterized as being mounted face down. The first semiconductor light-emitting device 45 of the lower stage is connected to the solder wire 46 via the wiring pattern 43 formed on the wiring substrate 42, and the semiconductor light-emitting device (the second semiconductor light-emitting device) that constitutes the upper portion of the light-emitting bodies 1A to 1F n' is connected in series via the first semiconductor light-emitting element 45 and the bump 47. In addition, the semiconductor light-emitting devices 41A and 41B' of the first and second embodiments are provided with only one illuminator μ1 to 1F. However, the number of the illuminants 1A to If is not limited. The required number of illuminants 1A to if can be installed in accordance with the necessity. In the semiconductor light-emitting device 41A of the first embodiment, the optical path defining member 21 is placed upward on the wiring -16 - 200945633 substrate 42, and the semiconductor light-emitting device 11 and the optical path defining member 21 and the light reflecting portion 31 are provided. Since the light-emitting bodies 1A to 1F are mounted, the light that is radiated from the light-emitting layer of the semiconductor light-emitting device 11 and enters the sapphire substrate 12 of the semiconductor light-emitting device can be directed by the optical path defining member 21 The side direction acts as a side-emitting type semiconductor light-emitting device. In the semiconductor light-emitting device 41A of the first embodiment, since the light-emitting bodies 1A to 1F are mounted on the wiring substrate 42, the structure is simple, and a thin and low-cost semiconductor can be fabricated. Light emitting device. In the semiconductor light-emitting device 41B of the second embodiment, the first semiconductor light-emitting device 45 is mounted on the wiring substrate 42 with the surface facing upward, and the light-emitting body 1A is formed on the upper surface of the first semiconductor light-emitting device 45. Since the second semiconductor light-emitting device 11 of ～1F is mounted face down, it is possible to radiate from the light-emitting layer of the first semiconductor light-emitting device 45 toward Q and enter the semiconductor substrate 12 of the second semiconductor light-emitting device 11 . The light and the light radiated from the light-emitting layer of the second semiconductor light-emitting element 11 and incident on the semiconductor substrate 12 of the second semiconductor light-emitting element 11 are directed toward the side surface by the optical path defining member 21, and are emitted as side surfaces. A type of semiconductor light-emitting device functions. In addition, since the first semiconductor light-emitting device 45 and the second semiconductor light-emitting device 11 are arranged in two layers on the wiring board 42, the number of semiconductor light-emitting elements per unit area can be increased, and semiconductor light can be emitted. The total radiant flux and side brightness of the device are increased. -17- 200945633 Hereinafter, the effects of the semiconductor light-emitting device of the above-described embodiment will be shown in comparison with a comparative example. In Fig. 9, simulation results of the total radiant flux and the light distribution of the semiconductor light-emitting device of the embodiment and the semiconductor light-emitting device of the comparative example are shown. In the figure, mode 1 is a case where an illuminant in which a glass plate having a high refractive index of not including the groove 22 and the light reflecting portion 31 is bonded to the upper surface of the semiconductor light-emitting device 11 is mounted on the wiring substrate 42. The mode 2 is a case where the illuminator 1B shown in FIG. 2 is mounted on the wiring substrate 42, and the mode 3 is a case where the illuminant 1F shown in FIG. 6 is mounted on the wiring substrate 42, mode 4, In order to attach the illuminator 1D shown in FIG. 4 to the wiring board 42, the mode 5 includes an optical path defining member 21 in which two grooves 22 are formed in an X shape in a diagonal direction, and In the optical path defining member 21, the illuminant to which the mirror member is bonded as the light reflecting portion 31 is attached to the wiring substrate 42, and the mode 6 is formed by the metal film on the glass plate of the mode 1. The illuminant of the incident light reflecting portion 31 is mounted on the wiring substrate 42, and the mode 7 is such that the illuminator of the mode 1 is reversed from the front and back surfaces and mounted on the wiring substrate 42. Therefore, modes 2, 3, 4, and 5 are modes of the semiconductor light-emitting device of the embodiment, and modes 1, 6, and 7 are modes of the semiconductor light-emitting device of the comparative example. Further, in the simulation, the light emission of the semiconductor light-emitting element 11 is green, and the optical path defining member 21 is a refractive index of 1. The glass of the semiconductor light-emitting element 11 and the optical path defining member 21 has a planar size of 0.3. The mmx0.3 mm, the thickness of the sapphire substrate 12 and the optical path defining member 21 are 〇·〇75ηιπι, the thickness of the semiconductor layer 13 is 0.010 mm 200945633, and the light reflectance of the wiring substrate 42 is 97%. As shown in Fig. 9(a), the maximum total radiant flux is the mode 7 of the comparative example, but the semiconductor light-emitting device is oriented as shown in Fig. 9(b). The light distribution in the direction toward the main surface is large, and the light distribution toward the main surface direction, that is, toward the side is small. Therefore, the semiconductor light-emitting device of the side discharge type cannot be used. Further, the total radiant flux is the second largest, and is also the semiconductor light-emitting device φ of the mode 1 of the comparative example. However, for the same reason, the semiconductor light-emitting device cannot be a side-emitting type semiconductor light-emitting device. On the other hand, the semiconductor light-emitting device of the mode 2 to 5 of the mode and the semiconductor light-emitting device of the mode 6 of the comparative example are the larger ones of the side light distribution, but the mode 6 of the comparative example Since the semiconductor illuminating device is extremely small in total radiant flux, it cannot be a practical side-emitting type semiconductor light-emitting device. As a result of the results of FIGS. 9( a ) and ( b ), it can be seen that since the light distribution system for the side is large and the total radiant flux is relatively high with respect to the upper φ, the implementation type is The semiconductor light-emitting devices of the modes 2 to 5 are suitable as a practical side-emitting type semiconductor light-emitting device. Further, when a parabolic shape groove 2 2 is formed instead of the V-shaped groove 22, the same result can be obtained. Next, in FIG. 1A to FIG. 13, the depth (ditch depth) d of the groove 22 formed at the optical path defining member 21 and the angle (groove angle) 19 formed by the inner surface of the groove 22 are optimal. The simulation results are shown. FIG. 10 is a view showing a case where the groove depth d and the groove angle are variously changed for the semiconductor light-emitting device of the mode 2 of the embodiment mode, and FIG. 11 -19- 200945633 'the mode of the coin for the implementation type In the case of the semiconductor light-emitting device of 3, the groove depth d and the groove angle 0 are variously changed. FIG. 12 shows the groove depth d and the groove angle 0 for the semiconductor light-emitting device of the mode 4 of the embodiment. As a result of various changes, FIG. 13 is a view showing a case where the groove depth d and the groove angle 0 are variously changed in the semiconductor light-emitting device of the mode 5 of the embodiment. As is clear from Fig. 10, in general, the semiconductor light-emitting device of mode 2 has no groove angle of 0, and if the groove depth d becomes larger, the total radiation flux is substantially uniformly increased. Then, the total radiant flux at a certain ditch depth d is intentionally different from the groove angle 6>, and when the groove angle 0 is set to 50 to 60, the full-radiation flux system becomes the largest. Practically, from the viewpoint of total radiant flux, the semiconductor light-emitting device for mode 2 is preferably set to have a groove angle of 0 of 60° ± 10°. As is clear from Fig. 11, in general, the semiconductor light-emitting device of mode 3 has no groove angle Θ, and if the groove depth d becomes larger, the total radiant flux is substantially uniformly increased. Then, the total radiant flux at a certain depth d of the ditch has a deliberate difference in response to the groove angle of 0. When the groove angle 0 is set to 120°, the total radiant flux is maximized. Practically, from the viewpoint of total radiant flux, the semiconductor light-emitting device for mode 3 is preferably set to have a groove angle of 0 of 120° ± 10°. As is clear from FIG. 12, in general, the semiconductor light-emitting device of mode 4 has no groove angle 0' except when the groove angle 0 is excessively large. The amount is increased. However, regarding the total radiant flux at a certain depth d, there is a -20-200945633 due to the intentional difference of the groove angle 0. When the groove angle 0 is set to 90°, the total radiant flux becomes maximum. Practically, from the viewpoint of total radiant flux, it is preferable that the semiconductor light-emitting device of mode 4 has a groove angle of 0 of 90° ± 10°. As can be clearly seen from Fig. 13, in general, the semiconductor light-emitting device of mode 5 has no groove angle 0 except for the case where the groove angle 0 is too large, and if the groove depth d becomes larger, the radiation is substantially uniformly The amount is increased by 0. Then, the total radiant flux at a certain depth d of the ditch has a intentional difference in response to the groove angle of 0. When the groove angle 0 is set to 90° to 1 20°, a large total radiant flux can be obtained. the amount. When the total radiant flux of the groove angle 0 is too small, it is conceivable that the light reflected by the groove 22 is hard to be directed to the side of the semiconductor light-emitting device, and is easily enclosed in the optical path defining member 21. Inside. On the other hand, when the total radiant flux is small when the groove angle Θ is too large, it is conceivable that the side sectional area of the semiconductor light-emitting device is reduced because the entire optical path defining member 21 is thinned. It becomes easy to cause total reflection at the side. Further, as can be seen from the comparison between the mode 2 and the mode 3, in general, the case where the metal film is formed as the light reflecting member 31 at the surface of the optical path defining member 21 is formed on the surface of the optical path defining member 21. When the mirror member is joined as the light reflecting member 31, the total radiant flux is increased. This is because, when a metal film is formed at the surface of the optical path defining member 21, absorption due to reflection of the mirror is caused in the groove 22, whereas when it is joined at the surface of the optical path defining member 21 - 21 - 200945633 In the case of a mirror member, it is conceivable that since the surface of the groove 22 is transparent, total reflection is likely to occur at the surface, and therefore mirror reflection is suppressed. Next, Fig. 14 shows a simulation result when the material of the optical path defining member 21 is changed to sapphire, glass having a refractive index of 1.8, and glass having a refractive index of 1.5. The mode used is the mode 2, the mode 3, the mode 4, and the mode 5 of the implementation mode, and the groove 22 having the most appropriate groove angle 0 is formed. As is apparent from Fig. 14, in general, when φ is compared with each other in the same mode, compared with the case where the optical path defining member 21 made of sapphire is used, the optical path defining member 21 is used. The total radiant flux is increased, and the distribution of light to the side is also increased. Next, Fig. 15 shows a simulation result when the thickness of the optical path defining member 21 and the groove angle β are variously changed. In addition,
圖表之橫軸係爲溝深度d，縱軸係成爲輻射通量。所使用 之模式，係設爲實施型態之模式2、模式3、模式4、模 Q 式5。如同由圖15中而可明顯得知一般，不論是在使用 何種模式的情況時，均是當溝深度d越大時則全輻射通量 會變得越大，因此，係得知：若是將光路規定構件21之 厚度設得越大，並使於其處所形成之溝深度d成爲越大， 則越能夠得到高照度之半導體發光裝置。又，在各模式中 均相同的，當將溝角度0設爲一定的情況時，就算是將溝 深度d作了變更的情況時，全輻射通量之圖表線亦係成爲 在同一線上，因此，係可得知，相較於將溝深度d增大， -22- 200945633 係以將溝角度0作最適化一事，更能夠得到全輻射通量之 改善的效果。故而，藉由一面對溝深度d作抑制一面將溝 角度0作最適化，能夠得到薄型且高照度之半導體發光裝 置。 又，由配光分布之模擬結果’而針對使對於側方向之 光的取出效率變高的溝22之形成條件作了檢討。所使用之 模式，係設爲實施型態之模式2、模式3、模式4、模式5, 〇 並計算出了圖16(a)中所示之25°以下的光之輻射通量與 圖16(b)中所示之35°以下的光之輻射通量。圖17，係爲 針對模式2以及模式3之半導體發光裝置的模擬結果，圖18 ，係爲針對模式4以及模式5之半導體發光裝置的模擬結果 。如圖17中所示一般，模式2之半導體發光裝置，係爲在 將光路規定構件21之厚度設爲110# m，將溝深度d設爲 105" m，將溝角度0設爲60°時，在25°方向以及35°方向 上均得到最大之全輻射通量，又，模式3之半導體發光裝 〇 置，係爲在將光路規定構件2〗之厚度設爲將溝 深度d設爲105# m，將溝角度0設爲80°時，在25°方向上 得到最大之全輻射通量，同時，在將光路規定構件21之厚 度設爲ll〇/zm，將溝深度d設爲l〇5#m，將溝角度0設爲 100°時，在35°方向上得到最大之全輻射通量。另一方面 ，如圖18中所示一般’模式4之半導體發光裝置，係爲在 將光路規定構件21之厚度設爲ii〇yam，將溝深度d設爲 l〇5ym，將溝角度β設爲80°時，在25°方向以及35°方向 上均得到最大之全輻射通量，又，模式5之半導體發光裝 -23- 200945633 置，係爲在將光路規定構件21之厚度設爲110/zm，將溝 深度d設爲105//m，將溝角度0設爲60°時，在25°方向上 得到最大之全輻射通量，同時，在將光路規定構件21之厚 度設爲ll〇/zm，將溝深度d設爲l〇5#m，將溝角度0設爲 80°時，在35°方向上得到最大之全輻射通量。 【圖式簡單說明】 [圖1]第1實施型態之發光體的立體圖。 @ [圖2]第2實施型態之發光體的立體圖。 [圖3]第3實施型態之發光體的立體圖。 [圖4]第4實施型態之發光體的立體圖。 [圖5]第5實施型態之發光體的立體圖。 [圖6]第6實施型態之發光體的立體圖。 [圖7]第1實施型態之半導體發光裝置的側面圖。 [圖8]第2實施型態之半導體發光裝置的側面圖。 [圖9]展示關於實施型態之半導體發光裝置以及比較 ❹ 例之半導體發光裝置的全輻射通量以及配光分布之模擬結 果的圖。 [圖10]展示針對實施型態之模式2的半導體發光裝置 而對溝深度d與溝角度β作了各種變更後的情況時之模擬 結果的圖。 [圖U]展示針對實施型態之模式3的半導體發光裝置 而對溝深度d與溝角度Θ作了各種變更後的情況時之模擬 結果的圖。 -24- 200945633 [圖12]展示針對實施型態之模式4的半導體發光裝置 而對溝深度d與溝角度0作了各種變更後的情況時之模擬 結果的圖。 [圖13]展示針對實施型態之模式5的半導體發光裝置 而對溝深度d與溝角度β作了各種變更後的情況時之模擬 結果的圖。 [圖14]展示對光路規定構件之材質作了各種變更後之 〇 情況的模擬結果之圖。 [圖15]展示對光路規定構件之厚度、溝深度以及溝角 度作了各種變更後之情況的模擬結果之圖。 [圖16]25°方向之光以及35°方向之光的說明圖》 [圖17]展示針對模式2以及模式3的半導體發光裝置 之輻射25°方向以及35°方向的光之條件的模擬結果之圖 〇 [圖18]展示針對模式4以及模式5的半導體發光裝置 © 之輻射25°方向以及35°方向的光之條件的模擬結果之圖 【主要元件符號說明】 1Α〜1F :發光體 1 1 :半導體發光元件 12:藍寶石基板（半導體基板） 13 :半導體層 21 :光路規定構件 -25- 200945633 22 :溝 3 1 :光反射部 41A、41B:半導體發光裝置 42 :配線基板 4 3 :配線圖案 44 :突塊 45:第1半導體發光元件 46 :焊接導線 47 :突塊The horizontal axis of the graph is the groove depth d, and the vertical axis is the radiant flux. The mode used is set to mode 2, mode 3, mode 4, and mode Q of the implementation mode. As is apparent from Fig. 15, generally, in the case of which mode is used, the total radiant flux becomes larger as the groove depth d is larger, and therefore, it is known that: The larger the thickness of the optical path defining member 21 is, and the larger the groove depth d formed therein is, the higher the illuminance semiconductor light-emitting device can be obtained. In the case where the groove angle 0 is constant in each mode, even when the groove depth d is changed, the chart line of the total radiant flux is also on the same line. It can be seen that compared with the increase of the groove depth d, -22-200945633 is able to optimize the groove angle 0, and the effect of improving the total radiant flux can be obtained. Therefore, by suppressing the groove angle 0 while suppressing the groove depth d, a thin and high-illuminance semiconductor light-emitting device can be obtained. Further, the formation conditions of the grooves 22 for increasing the extraction efficiency of the light in the side direction were examined from the simulation result of the light distribution. The mode used is set to mode 2, mode 3, mode 4, and mode 5 of the implementation mode, and the radiant flux of light of 25° or less as shown in Fig. 16(a) is calculated and Fig. 16 The radiant flux of light below 35° as shown in (b). Fig. 17 is a simulation result of the semiconductor light-emitting device for mode 2 and mode 3, and Fig. 18 is a simulation result for the semiconductor light-emitting device of mode 4 and mode 5. As shown in FIG. 17, generally, the semiconductor light-emitting device of mode 2 has a thickness of the light path defining member 21 of 110#m, a groove depth d of 105" m, and a groove angle of 0 of 60°. The maximum total radiant flux is obtained in both the 25° direction and the 35° direction. Further, in the semiconductor illuminating device of the mode 3, the thickness of the optical path defining member 2 is set to set the groove depth d to 105. #m, when the groove angle 0 is set to 80°, the maximum total radiant flux is obtained in the 25° direction, and at the same time, the thickness of the optical path defining member 21 is set to ll 〇 / zm, and the groove depth d is set to l 〇5#m, when the groove angle 0 is set to 100°, the maximum total radiant flux is obtained in the 35° direction. On the other hand, as shown in FIG. 18, the semiconductor light-emitting device of the general mode 4 has a groove depth d of l〇5ym and a groove angle β when the thickness of the optical path defining member 21 is ii 〇 yam. At 80°, the maximum total radiant flux is obtained in both the 25° direction and the 35° direction, and the mode 5 semiconductor illuminating device -23-200945633 is set to set the thickness of the optical path defining member 21 to 110. /zm, the groove depth d is set to 105//m, and when the groove angle 0 is 60°, the maximum total radiant flux is obtained in the 25° direction, and the thickness of the optical path defining member 21 is set to ll. 〇/zm, the groove depth d is set to l〇5#m, and when the groove angle 0 is set to 80°, the maximum total radiant flux is obtained in the 35° direction. BRIEF DESCRIPTION OF THE DRAWINGS [Fig. 1] A perspective view of an illuminator of a first embodiment. @ [ Fig. 2] A perspective view of an illuminator of a second embodiment. Fig. 3 is a perspective view of an illuminator of a third embodiment. Fig. 4 is a perspective view of an illuminant of a fourth embodiment. Fig. 5 is a perspective view of an illuminant of a fifth embodiment. Fig. 6 is a perspective view of an illuminator of a sixth embodiment. Fig. 7 is a side view showing a semiconductor light-emitting device of a first embodiment. Fig. 8 is a side view showing a semiconductor light-emitting device of a second embodiment. Fig. 9 is a view showing simulation results of the total radiant flux and the light distribution of the semiconductor light-emitting device of the embodiment and the semiconductor light-emitting device of the comparative example. Fig. 10 is a view showing simulation results in the case where the groove depth d and the groove angle β are variously changed in the semiconductor light-emitting device of the mode 2 of the embodiment. Fig. 5 is a view showing simulation results in the case where the groove depth d and the groove angle are variously changed in the semiconductor light-emitting device of the mode 3 of the embodiment. -24-200945633 [Fig. 12] Fig. 12 is a view showing simulation results when the groove depth d and the groove angle 0 are variously changed in the semiconductor light-emitting device of the mode 4 of the embodiment. Fig. 13 is a view showing simulation results in the case where the groove depth d and the groove angle β are variously changed in the semiconductor light-emitting device of the mode 5 of the embodiment. Fig. 14 is a view showing a simulation result of a case where various changes are made to the material of the optical path defining member. Fig. 15 is a view showing simulation results of various changes in the thickness, the groove depth, and the groove angle of the optical path defining member. [Fig. 16] Explanation of Light in the 25° Direction and Light in the 35° Direction [Fig. 17] Simulation results showing the conditions of the radiation in the 25° direction and the 35° direction of the semiconductor light-emitting device of Mode 2 and Mode 3 FIG. 18 is a diagram showing simulation results of the conditions of the radiation in the 25° direction and the 35° direction of the semiconductor light-emitting device © of the mode 4 and the mode 5 [Description of main components] 1Α~1F: Illuminant 1 1 : semiconductor light-emitting device 12: sapphire substrate (semiconductor substrate) 13 : semiconductor layer 21 : optical path defining member - 25 - 200945633 22 : groove 3 1 : light reflecting portion 41A, 41B: semiconductor light-emitting device 42 : wiring substrate 4 3 : wiring Pattern 44: Projection 45: First semiconductor light-emitting element 46: Soldering wire 47: Projection
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