JP2013506976A - オプトエレクトロニクス部品 - Google Patents
オプトエレクトロニクス部品 Download PDFInfo
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- JP2013506976A JP2013506976A JP2012531310A JP2012531310A JP2013506976A JP 2013506976 A JP2013506976 A JP 2013506976A JP 2012531310 A JP2012531310 A JP 2012531310A JP 2012531310 A JP2012531310 A JP 2012531310A JP 2013506976 A JP2013506976 A JP 2013506976A
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- 230000005693 optoelectronics Effects 0.000 title claims abstract description 236
- 239000004065 semiconductor Substances 0.000 claims abstract description 148
- 238000001465 metallisation Methods 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910000679 solder Inorganic materials 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 57
- 238000004382 potting Methods 0.000 claims description 50
- 239000004020 conductor Substances 0.000 claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 239000000969 carrier Substances 0.000 claims description 14
- 238000000206 photolithography Methods 0.000 claims description 4
- 230000005670 electromagnetic radiation Effects 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 230000005855 radiation Effects 0.000 description 8
- 239000004033 plastic Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 3
- 230000005499 meniscus Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000012876 carrier material Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 150000002118 epoxides Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- GJNGXPDXRVXSEH-UHFFFAOYSA-N 4-chlorobenzonitrile Chemical compound ClC1=CC=C(C#N)C=C1 GJNGXPDXRVXSEH-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
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Abstract
【選択図】 図1
Description
Claims (14)
- オプトエレクトロニクス部品であって、
− 第1の主領域(1a)を有するキャリア(1)と、
− 少なくとも1個の基板レス・オプトエレクトロニクス半導体チップ(2)と、
− コンタクトメタライゼーション(3a,3b)と、
を備えており、
− 前記キャリア(1)が電気絶縁性であり、
− 前記少なくとも1個のオプトエレクトロニクス半導体チップ(2)が、前記キャリア(1)の前記第1の主領域(1a)に、結合材料(4)、特にはんだ材料によって、固定されており、
− 前記コンタクトメタライゼーション(3a,3b)が、前記第1の主領域(1a)のうち前記オプトエレクトロニクス半導体チップ(2)が存在していない少なくとも1つの領域、を覆っており、
− 前記コンタクトメタライゼーション(3a,3b)が、前記オプトエレクトロニクス半導体チップ(2)に導電接続されている、
オプトエレクトロニクス部品。 - − 前記キャリア(1)が、前記第1の主領域(1a)から、前記キャリア(1)を通って、反対側の第2の主領域(1b)まで延在している少なくとも1つの開口部(5)、を有し、
− 前記開口部(5)が、少なくとも部分的に導電性材料(6)で満たされており、
− 前記導電性材料(6)が、前記コンタクトメタライゼーション(3a,3b)に導電接続されている、
請求項1に記載のオプトエレクトロニクス部品。 - − 前記少なくとも1つの開口部(5)が、横方向において、前記キャリア(1)によって完全に囲まれている、
請求項2に記載のオプトエレクトロニクス部品。 - − 少なくとも1つの開口部(5)の前記導電性材料(6)の横方向に前記キャリア(1)が存在しない、
請求項1から請求項3のいずれか一項に記載のオプトエレクトロニクス部品。 - − 前記キャリア(1)の前記第2の主領域(1b)に、少なくとも1つの部品接続部(8)が配置されており、
− 前記部品接続部(8)が、前記少なくとも1つの開口部(5)における前記導電性材料(6)に導電接続されている、
請求項1から請求項4のいずれか一項に記載のオプトエレクトロニクス部品。 - − 前記キャリア(1)の前記第1の主領域(1a)に固定されている少なくとも2個の同じタイプのオプトエレクトロニクス半導体チップ(2)と、
− 前記同じタイプのオプトエレクトロニクス半導体チップ(2)を、前記第1の主領域(1a)とは反対側の面において覆っている少なくとも1つの変換要素(9)と、
を備えている、請求項1から請求項5のいずれか一項に記載のオプトエレクトロニクス部品。 - − 前記変換要素(9)が、同じタイプの2個の隣り合うオプトエレクトロニクス半導体チップ(2)の間の空間(10)を覆っている、
請求項6に記載のオプトエレクトロニクス部品。 - − 前記オプトエレクトロニクス半導体チップ(2)の周囲に少なくとも部分的に形成されているポッティング体(11)、
を備えており、
− 前記ポッティング体(11)が前記キャリア(1)の前記第1の主領域(1a)に隣接しており、
− 前記ポッティング体の少なくとも1つの側面領域(11c)が、前記キャリア(1)の少なくとも1つの側面領域(1c)と揃っている、
請求項1から請求項7のいずれか一項に記載のオプトエレクトロニクス部品。 - − ハウジング基体(12)と、
− 請求項1から請求項8のいずれか一項に記載の、少なくとも1個のオプトエレクトロニクス部品(100)と、
を備えており、
− 前記オプトエレクトロニクス部品(100)が前記ハウジング基体(12)に固定されている、
オプトエレクトロニクスデバイス。 - − 前記オプトエレクトロニクス部品(100)の周囲に少なくとも部分的にポッティング体(11)が成形されており、
− 前記ポッティング体(11)が、前記キャリア(1)と、前記オプトエレクトロニクス半導体チップ(2)と、前記ハウジング基体(12)とに隣接している、
請求項9に記載のオプトエレクトロニクスデバイス。 - オプトエレクトロニクス部品を製造する方法であって、
− 多数のキャリア(1)を備えたキャリア集合体を形成するステップと、
− 多数のオプトエレクトロニクス半導体チップ(2)を基板(20)上に形成するステップと、
− 前記オプトエレクトロニクス半導体チップ(2)を前記基板(20)から剥離するステップと、
− 少なくとも1個の前記オプトエレクトロニクス半導体チップ(2)を、前記キャリア集合体の少なくとも1つの前記キャリア(1)に、はんだ実装によって貼り付けるステップと、
を含んでおり、
− 前記オプトエレクトロニクス半導体チップ(2)が前記キャリア(1)に貼り付けられる前に、前記オプトエレクトロニクス半導体チップ(2)を動作させることで機能チェックが実行される、
方法。 - − 前記オプトエレクトロニクス半導体チップ(2)が、前記キャリア集合体のキャリア(1)に貼り付けられる前に、補助キャリア(22)に貼り付けられ、
− 前記機能チェックが前記補助キャリア(22)において実行される、
請求項11に記載の方法。 - − 前記キャリア集合体の少なくとも1つのキャリア(1)の第1の主領域(1a)にメタライゼーションが形成され、
− 次いで、フォトリソグラフィ法を使用して前記メタライゼーションがパターン化されてコンタクトメタライゼーション(3a,3b)が形成される、
請求項11または請求項12のいずれか一項に記載の方法。 - − 請求項1から請求項8のいずれか一項に記載のオプトエレクトロニクス部品が製造される、
請求項11から請求項13のいずれか一項に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009047878 | 2009-09-30 | ||
DE102009047878.7 | 2009-09-30 | ||
DE102009051746A DE102009051746A1 (de) | 2009-09-30 | 2009-11-03 | Optoelektronisches Bauelement |
DE102009051746.4 | 2009-11-03 | ||
PCT/EP2010/062733 WO2011039023A1 (de) | 2009-09-30 | 2010-08-31 | Optoelektronisches bauelement |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013506976A true JP2013506976A (ja) | 2013-02-28 |
JP2013506976A5 JP2013506976A5 (ja) | 2013-07-11 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012531310A Pending JP2013506976A (ja) | 2009-09-30 | 2010-08-31 | オプトエレクトロニクス部品 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8853732B2 (ja) |
EP (1) | EP2483937B1 (ja) |
JP (1) | JP2013506976A (ja) |
KR (1) | KR20120091173A (ja) |
CN (1) | CN102576790B (ja) |
DE (1) | DE102009051746A1 (ja) |
TW (1) | TW201126775A (ja) |
WO (1) | WO2011039023A1 (ja) |
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KR20190117174A (ko) * | 2018-04-06 | 2019-10-16 | 엘지이노텍 주식회사 | 반도체 소자 패키지 |
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DE102015114010A1 (de) * | 2015-08-24 | 2017-03-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement, Verfahren zur Herstellung eines optoelektronischen Bauelements und Verfahren zum Betrieb eines optoelektronischen Bauelements |
DE102015118433A1 (de) * | 2015-10-28 | 2017-05-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
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DE102016108682A1 (de) * | 2016-05-11 | 2017-11-16 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement |
DE102018101582B4 (de) * | 2018-01-24 | 2022-10-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlung emittierende Vorrichtung |
EP3591345B1 (de) * | 2018-07-02 | 2020-11-11 | Dr. Johannes Heidenhain GmbH | Verfahren zur herstellung einer lichtquelle für eine sensoreinheit einer positionsmesseinrichtung sowie eine positionsmesseinrichtung |
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KR20170054803A (ko) * | 2015-11-10 | 2017-05-18 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 조명 장치 |
KR102487685B1 (ko) | 2015-11-10 | 2023-01-16 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 및 이를 구비한 조명 장치 |
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Also Published As
Publication number | Publication date |
---|---|
KR20120091173A (ko) | 2012-08-17 |
US8853732B2 (en) | 2014-10-07 |
US20120248492A1 (en) | 2012-10-04 |
EP2483937B1 (de) | 2019-01-09 |
WO2011039023A1 (de) | 2011-04-07 |
CN102576790B (zh) | 2016-08-03 |
DE102009051746A1 (de) | 2011-03-31 |
TW201126775A (en) | 2011-08-01 |
EP2483937A1 (de) | 2012-08-08 |
CN102576790A (zh) | 2012-07-11 |
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