JP6621797B2 - 複数のオプトエレクトロニクス部品の製造方法 - Google Patents
複数のオプトエレクトロニクス部品の製造方法 Download PDFInfo
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- JP6621797B2 JP6621797B2 JP2017231543A JP2017231543A JP6621797B2 JP 6621797 B2 JP6621797 B2 JP 6621797B2 JP 2017231543 A JP2017231543 A JP 2017231543A JP 2017231543 A JP2017231543 A JP 2017231543A JP 6621797 B2 JP6621797 B2 JP 6621797B2
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- 238000000034 method Methods 0.000 title claims description 85
- 230000005693 optoelectronics Effects 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 147
- 239000000463 material Substances 0.000 claims description 108
- 238000004382 potting Methods 0.000 claims description 79
- 229910052751 metal Inorganic materials 0.000 claims description 60
- 239000002184 metal Substances 0.000 claims description 60
- 238000006243 chemical reaction Methods 0.000 claims description 41
- 239000002245 particle Substances 0.000 claims description 24
- 230000005855 radiation Effects 0.000 claims description 21
- 230000003287 optical effect Effects 0.000 claims description 19
- 229910052594 sapphire Inorganic materials 0.000 claims description 15
- 239000010980 sapphire Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 238000005266 casting Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 239000010410 layer Substances 0.000 description 102
- 235000012431 wafers Nutrition 0.000 description 41
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 20
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 19
- 230000005670 electromagnetic radiation Effects 0.000 description 19
- 239000011159 matrix material Substances 0.000 description 14
- 230000000087 stabilizing effect Effects 0.000 description 13
- 229910052761 rare earth metal Inorganic materials 0.000 description 12
- 229910052759 nickel Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000002131 composite material Substances 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 150000002910 rare earth metals Chemical class 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000004954 Polyphthalamide Substances 0.000 description 4
- 229920006375 polyphtalamide Polymers 0.000 description 4
- 238000004062 sedimentation Methods 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000012876 carrier material Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 229920001123 polycyclohexylenedimethylene terephthalate Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 235000014692 zinc oxide Nutrition 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- MFEVGQHCNVXMER-UHFFFAOYSA-L 1,3,2$l^{2}-dioxaplumbetan-4-one Chemical compound [Pb+2].[O-]C([O-])=O MFEVGQHCNVXMER-UHFFFAOYSA-L 0.000 description 1
- 229910000003 Lead carbonate Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- UJAXHWXDLUXGII-UHFFFAOYSA-N [Ni].[Cu].[Ag].[Ni] Chemical compound [Ni].[Cu].[Ag].[Ni] UJAXHWXDLUXGII-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- -1 alkaline earth metal silicon nitride Chemical class 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- GTDCAOYDHVNFCP-UHFFFAOYSA-N chloro(trihydroxy)silane Chemical compound O[Si](O)(O)Cl GTDCAOYDHVNFCP-UHFFFAOYSA-N 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
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- H01L2924/181—Encapsulation
- H01L2924/183—Connection portion, e.g. seal
- H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
Claims (17)
- − コンタクト構造体(4)を有する補助キャリアウェハ(1)を設けるステップと;
− 動作中に側面を介して光を出射可能な複数の放射出射半導体ボディ(5)を前記コンタクト構造体(4)に設けるステップと;
− 反射性ポッティング材(10)を使用して少なくとも前記コンタクト構造体(4)を封止するステップであって、前記半導体ボディ(5)の側面から前記反射性ポッティング材(10)を完全になくす、又は、前記半導体ボディ(5)から前記反射性ポッティング材(10)を離隔するステップと;
− 前記補助キャリアウェハ(1)をレーザリフトオフ法により除去するステップと、
を含む、複数のオプトエレクトロニクス部品の製造方法。 - 前記コンタクト構造体(4)は、第1金属層(2)および第2金属層(3)を有し、
前記第2金属層(3)は、前記第1金属層(2)上に電気めっき法により成膜される、
請求項1に記載の方法。 - 前記第2金属層(3)は、アンダーカット部を有する横側面を有する、
請求項2に記載の方法。 - 前記第2金属層(3)の横側面は、前記第2金属層(3)の主面の法線に対して傾斜しており、
前記第2金属層(3)の断面領域は、前記半導体ボディ(5)に対向する主面から前記半導体ボディ(5)と反対側の主面に向かってテーパー状となっている、
請求項3に記載の方法。 - 前記反射性ポッティング材(10)の上縁は、前記第2金属層(3)の上縁まで延在する、
請求項2〜4のいずれか一項に記載の方法。 - 前記反射性ポッティング材(10)の上縁は、部分的に前記第2金属層(3)を越えて延在する、
請求項2〜4のいずれか一項に記載の方法。 - 前記反射性ポッティング材(10)の上縁は、前記半導体ボディ(5)の上縁まで延在する、
請求項1〜4のいずれか一項に記載の方法。 - 前記反射性ポッティング材(10)は、キャスト法、吐出法、噴射法、成形法のうちの1つを使用して設けられる、
請求項1〜7のいずれか一項に記載の方法。 - 波長変換層(14)が前記半導体ボディ(5)の上方に位置する光路(12)上に配置される、
請求項1〜8のいずれか一項に記載の方法。 - 光学要素(15)が前記各半導体ボディ(5)の上方に位置する光路(12)上に配置される、
請求項1〜9のいずれか一項に記載の方法。 - 光学要素(15)は、前記半導体ボディ(5)の上に成形される、
請求項1〜10のいずれか一項に記載の方法。 - 前記半導体ボディ(5)は、フリップチップとして具現化される、
請求項1〜11のいずれか一項に記載の方法。 - 前記半導体ボディ(5)は、前記半導体ボディ(5)の表側面(9)上に1つの電気コンタクトまたは少なくとも2つの電気コンタクトを有する、
請求項1〜11のいずれか一項に記載の方法。 - 前記反射性ポッティング材(10)は、反射性粒子が埋め込まれた樹脂を含む、
請求項1〜13の何れか一項に記載の方法。 - 波長変換層が前記反射性ポッティング材(10)上に適用される、
請求項1〜14の何れか一項に記載の方法。 - 前記半導体ボディ(5)は、サファイア基板、または、炭化ケイ素基板を含む、
請求項1〜15の何れか一項に記載の方法。 - 前記補助キャリアウェハ(1)は、ガラスまたはサファイアで構成される、
請求項1〜16の何れか一項に記載の方法。
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