KR20120059559A - 반도체 장치의 형성방법 - Google Patents

반도체 장치의 형성방법 Download PDF

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Publication number
KR20120059559A
KR20120059559A KR1020127007098A KR20127007098A KR20120059559A KR 20120059559 A KR20120059559 A KR 20120059559A KR 1020127007098 A KR1020127007098 A KR 1020127007098A KR 20127007098 A KR20127007098 A KR 20127007098A KR 20120059559 A KR20120059559 A KR 20120059559A
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South Korea
Prior art keywords
silicon
layer
epitaxial
wafer
growing
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Ceased
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KR1020127007098A
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English (en)
Korean (ko)
Inventor
헤밀톤 루
더-투 차우
카일 테릴
데바 엔. 펫트아나야크
샤론 시
쿠오-인 첸
로버트 수
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비쉐이-실리코닉스
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Publication of KR20120059559A publication Critical patent/KR20120059559A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/15—Diffusion of dopants within, into or out of semiconductor bodies or layers from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H10D62/605—Planar doped, e.g. atomic-plane doped or delta-doped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3448—Delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3822—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
KR1020127007098A 2009-09-03 2010-09-03 반도체 장치의 형성방법 Ceased KR20120059559A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US23972909P 2009-09-03 2009-09-03
US61/239,729 2009-09-03
US12/873,147 US9230810B2 (en) 2009-09-03 2010-08-31 System and method for substrate wafer back side and edge cross section seals
US12/873,147 2010-08-31
PCT/US2010/047827 WO2011029010A2 (en) 2009-09-03 2010-09-03 Method of forming a semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020167008584A Division KR101752112B1 (ko) 2009-09-03 2010-09-03 반도체 장치의 형성방법

Publications (1)

Publication Number Publication Date
KR20120059559A true KR20120059559A (ko) 2012-06-08

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Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020127007098A Ceased KR20120059559A (ko) 2009-09-03 2010-09-03 반도체 장치의 형성방법
KR1020167008584A Active KR101752112B1 (ko) 2009-09-03 2010-09-03 반도체 장치의 형성방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020167008584A Active KR101752112B1 (ko) 2009-09-03 2010-09-03 반도체 장치의 형성방법

Country Status (6)

Country Link
US (2) US9230810B2 (https=)
EP (1) EP2474039B1 (https=)
JP (1) JP6002037B2 (https=)
KR (2) KR20120059559A (https=)
CN (1) CN102598276B (https=)
WO (1) WO2011029010A2 (https=)

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Publication number Priority date Publication date Assignee Title
CN104810363B (zh) * 2014-01-26 2018-04-17 北大方正集团有限公司 功率集成器件及其制作方法
US9379185B2 (en) 2014-04-24 2016-06-28 International Business Machines Corporation Method of forming channel region dopant control in fin field effect transistor
WO2016021020A1 (ja) * 2014-08-07 2016-02-11 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置の製造方法、及び、半導体装置
CN106835269A (zh) * 2017-03-03 2017-06-13 上海新傲科技股份有限公司 用于氮化物外延生长的叠层基板及其形成方法
JP2019075438A (ja) * 2017-10-13 2019-05-16 明広 石田 半導体レーザ素子及び半導体レーザ素子の製造方法
CN112595949A (zh) * 2020-12-28 2021-04-02 上海超硅半导体有限公司 一种晶圆自动测试装置及测试方法
CN120656944A (zh) * 2024-03-13 2025-09-16 朗姆研究公司 半导体衬底的背面密封
CN118380332B (zh) * 2024-06-21 2024-09-06 日月新半导体(威海)有限公司 一种集成电路封装体及其制备方法

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Publication number Publication date
JP2013504217A (ja) 2013-02-04
KR101752112B1 (ko) 2017-06-28
US9230810B2 (en) 2016-01-05
CN102598276B (zh) 2015-05-06
WO2011029010A2 (en) 2011-03-10
US10546750B2 (en) 2020-01-28
EP2474039A4 (en) 2014-01-08
US20110049682A1 (en) 2011-03-03
EP2474039A2 (en) 2012-07-11
WO2011029010A3 (en) 2011-07-21
CN102598276A (zh) 2012-07-18
JP6002037B2 (ja) 2016-10-05
EP2474039B1 (en) 2020-11-04
KR20160042462A (ko) 2016-04-19
US20160225622A1 (en) 2016-08-04

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