KR20110105730A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20110105730A
KR20110105730A KR1020110024432A KR20110024432A KR20110105730A KR 20110105730 A KR20110105730 A KR 20110105730A KR 1020110024432 A KR1020110024432 A KR 1020110024432A KR 20110024432 A KR20110024432 A KR 20110024432A KR 20110105730 A KR20110105730 A KR 20110105730A
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KR
South Korea
Prior art keywords
transistor
potential
electrode
insulating layer
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020110024432A
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English (en)
Korean (ko)
Inventor
히로키 이노우에
타카노리 마쓰자키
슈헤이 나가쓰카
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20110105730A publication Critical patent/KR20110105730A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020110024432A 2010-03-19 2011-03-18 반도체 장치 Ceased KR20110105730A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-063929 2010-03-19
JP2010063929 2010-03-19

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020140042726A Division KR101635626B1 (ko) 2010-03-19 2014-04-10 반도체 장치

Publications (1)

Publication Number Publication Date
KR20110105730A true KR20110105730A (ko) 2011-09-27

Family

ID=44646526

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020110024432A Ceased KR20110105730A (ko) 2010-03-19 2011-03-18 반도체 장치
KR1020140042726A Expired - Fee Related KR101635626B1 (ko) 2010-03-19 2014-04-10 반도체 장치
KR1020160077403A Active KR101718931B1 (ko) 2010-03-19 2016-06-21 반도체 장치

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020140042726A Expired - Fee Related KR101635626B1 (ko) 2010-03-19 2014-04-10 반도체 장치
KR1020160077403A Active KR101718931B1 (ko) 2010-03-19 2016-06-21 반도체 장치

Country Status (5)

Country Link
US (1) US8563973B2 (https=)
JP (4) JP5736196B2 (https=)
KR (3) KR20110105730A (https=)
TW (1) TWI523150B (https=)
WO (1) WO2011114868A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120120039A (ko) * 2011-04-21 2012-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 신호 처리 회로
KR20150107672A (ko) * 2014-03-14 2015-09-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법, 및 전자 기기
KR20180093103A (ko) * 2010-02-19 2018-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치, 그 구동 방법, 및 반도체 장치 제작 방법

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KR20150107672A (ko) * 2014-03-14 2015-09-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법, 및 전자 기기

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JP2017108154A (ja) 2017-06-15
KR101635626B1 (ko) 2016-07-04
JP5736196B2 (ja) 2015-06-17
JP2013232652A (ja) 2013-11-14
WO2011114868A1 (en) 2011-09-22
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US20110227072A1 (en) 2011-09-22
US8563973B2 (en) 2013-10-22
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KR20160075480A (ko) 2016-06-29
JP6293085B2 (ja) 2018-03-14
JP6360925B2 (ja) 2018-07-18

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