KR20110086832A - 임프린트 공정의 분리 단계 동안의 변형 및 동력학 제어 - Google Patents
임프린트 공정의 분리 단계 동안의 변형 및 동력학 제어 Download PDFInfo
- Publication number
- KR20110086832A KR20110086832A KR1020117011723A KR20117011723A KR20110086832A KR 20110086832 A KR20110086832 A KR 20110086832A KR 1020117011723 A KR1020117011723 A KR 1020117011723A KR 20117011723 A KR20117011723 A KR 20117011723A KR 20110086832 A KR20110086832 A KR 20110086832A
- Authority
- KR
- South Korea
- Prior art keywords
- template
- substrate
- separation
- solidified layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000926 separation method Methods 0.000 title claims abstract description 123
- 238000000034 method Methods 0.000 title claims abstract description 58
- 230000008569 process Effects 0.000 title abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 150
- 238000001459 lithography Methods 0.000 claims abstract description 6
- 230000001133 acceleration Effects 0.000 claims description 14
- 238000000059 patterning Methods 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 12
- 238000012544 monitoring process Methods 0.000 claims description 8
- 230000002787 reinforcement Effects 0.000 claims description 6
- 230000003014 reinforcing effect Effects 0.000 claims description 6
- 238000000701 chemical imaging Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 238000012546 transfer Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 60
- 239000000463 material Substances 0.000 description 16
- 230000007547 defect Effects 0.000 description 14
- 230000002829 reductive effect Effects 0.000 description 12
- 230000007704 transition Effects 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000000203 droplet dispensing Methods 0.000 description 1
- 238000005189 flocculation Methods 0.000 description 1
- 230000016615 flocculation Effects 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
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- 239000010453 quartz Substances 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
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- 238000004528 spin coating Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C37/00—Component parts, details, accessories or auxiliary operations, not covered by group B29C33/00 or B29C35/00
- B29C37/0003—Discharging moulded articles from the mould
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10813108P | 2008-10-24 | 2008-10-24 | |
| US61/108,131 | 2008-10-24 | ||
| US10955708P | 2008-10-30 | 2008-10-30 | |
| US61/109,557 | 2008-10-30 | ||
| US12/604,517 | 2009-10-23 | ||
| US12/604,517 US8652393B2 (en) | 2008-10-24 | 2009-10-23 | Strain and kinetics control during separation phase of imprint process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20110086832A true KR20110086832A (ko) | 2011-08-01 |
Family
ID=42116691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020117011723A Ceased KR20110086832A (ko) | 2008-10-24 | 2009-10-26 | 임프린트 공정의 분리 단계 동안의 변형 및 동력학 제어 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US8652393B2 (enExample) |
| EP (1) | EP2350741B1 (enExample) |
| JP (2) | JP2012507141A (enExample) |
| KR (1) | KR20110086832A (enExample) |
| CN (1) | CN102203671B (enExample) |
| MY (1) | MY152446A (enExample) |
| TW (2) | TWI405659B (enExample) |
| WO (1) | WO2010047837A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220031078A (ko) * | 2019-08-15 | 2022-03-11 | 캐논 가부시끼가이샤 | 평탄화 공정, 장치, 및 물품 제조 방법 |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11508790A (ja) | 1995-06-30 | 1999-08-03 | ボストン・サイエンティフィック・コーポレイション | 切断エレメントを備えた超音波映写カテーテル |
| US8652393B2 (en) | 2008-10-24 | 2014-02-18 | Molecular Imprints, Inc. | Strain and kinetics control during separation phase of imprint process |
| JP4792096B2 (ja) * | 2009-03-19 | 2011-10-12 | 株式会社東芝 | テンプレートパターンの設計方法、テンプレートの製造方法及び半導体装置の製造方法。 |
| JP4940262B2 (ja) * | 2009-03-25 | 2012-05-30 | 株式会社東芝 | インプリントパターン形成方法 |
| JP5499668B2 (ja) * | 2009-12-03 | 2014-05-21 | 大日本印刷株式会社 | インプリント用モールドおよび該モールドを用いたパターン形成方法 |
| JP5833636B2 (ja) * | 2010-04-27 | 2015-12-16 | モレキュラー・インプリンツ・インコーポレーテッド | ナノインプリント・リソグラフィのテンプレート製作方法およびそのシステム |
| JP5750992B2 (ja) * | 2011-04-27 | 2015-07-22 | 大日本印刷株式会社 | インプリント方法およびそれを実施するためのインプリント装置 |
| JP5875250B2 (ja) * | 2011-04-28 | 2016-03-02 | キヤノン株式会社 | インプリント装置、インプリント方法及びデバイス製造方法 |
| JP5747670B2 (ja) * | 2011-06-10 | 2015-07-15 | 大日本印刷株式会社 | 成形部材およびその製造方法 |
| JP6004738B2 (ja) * | 2011-09-07 | 2016-10-12 | キヤノン株式会社 | インプリント装置、それを用いた物品の製造方法 |
| JP5535162B2 (ja) * | 2011-09-21 | 2014-07-02 | 株式会社東芝 | パターン形成装置、パターン形成方法及びパターン形成用プログラム |
| JP2013069920A (ja) * | 2011-09-22 | 2013-04-18 | Toshiba Corp | 成膜方法およびパターン形成方法 |
| JP6140966B2 (ja) * | 2011-10-14 | 2017-06-07 | キヤノン株式会社 | インプリント装置、それを用いた物品の製造方法 |
| JP2014033050A (ja) * | 2012-08-02 | 2014-02-20 | Toshiba Corp | インプリントシステム及びインプリント方法 |
| US20140239529A1 (en) * | 2012-09-28 | 2014-08-28 | Nanonex Corporation | System and Methods For Nano-Scale Manufacturing |
| JP6060796B2 (ja) * | 2013-04-22 | 2017-01-18 | 大日本印刷株式会社 | インプリントモールド及びダミーパターン設計方法 |
| CN103529644A (zh) * | 2013-10-25 | 2014-01-22 | 无锡英普林纳米科技有限公司 | 一种纳米压印机 |
| CN106462054B (zh) * | 2014-03-31 | 2020-07-07 | 皇家飞利浦有限公司 | 压印方法、用于压印方法的计算机程序产品和装置 |
| JP6472189B2 (ja) * | 2014-08-14 | 2019-02-20 | キヤノン株式会社 | インプリント装置、インプリント方法及び物品の製造方法 |
| JP6774178B2 (ja) * | 2015-11-16 | 2020-10-21 | キヤノン株式会社 | 基板を処理する装置、及び物品の製造方法 |
| JP6335948B2 (ja) * | 2016-02-12 | 2018-05-30 | キヤノン株式会社 | インプリント装置および物品製造方法 |
| TWI672212B (zh) * | 2016-08-25 | 2019-09-21 | 國立成功大學 | 奈米壓印組合體及其壓印方法 |
| US10627715B2 (en) * | 2016-10-31 | 2020-04-21 | Canon Kabushiki Kaisha | Method for separating a nanoimprint template from a substrate |
| JP6762853B2 (ja) | 2016-11-11 | 2020-09-30 | キヤノン株式会社 | 装置、方法、及び物品製造方法 |
| US11442359B2 (en) | 2019-03-11 | 2022-09-13 | Canon Kabushiki Kaisha | Method of separating a template from a shaped film on a substrate |
| JP7284639B2 (ja) * | 2019-06-07 | 2023-05-31 | キヤノン株式会社 | 成形装置、および物品製造方法 |
| TWI888630B (zh) * | 2020-09-01 | 2025-07-01 | 美商伊路米納有限公司 | 夾具及相關系統及方法 |
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| NO311797B1 (no) * | 1999-05-12 | 2002-01-28 | Thin Film Electronics Asa | Fremgangsmåter til mönstring av polymerfilmer og anvendelse av fremgangsmåtene |
| US6873087B1 (en) | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
| SE515607C2 (sv) | 1999-12-10 | 2001-09-10 | Obducat Ab | Anordning och metod vid tillverkning av strukturer |
| JP3848070B2 (ja) * | 2000-09-27 | 2006-11-22 | 株式会社東芝 | パターン形成方法 |
| JP2003017390A (ja) | 2001-06-29 | 2003-01-17 | Toshiba Corp | パターン形成方法及びパターン形成に用いるマスク |
| DE20122197U1 (de) | 2001-06-30 | 2004-12-02 | Zf Friedrichshafen Ag | Schaltelement-Baugruppe für ein Getriebe |
| US20050064344A1 (en) | 2003-09-18 | 2005-03-24 | University Of Texas System Board Of Regents | Imprint lithography templates having alignment marks |
| JP3556647B2 (ja) | 2001-08-21 | 2004-08-18 | 沖電気工業株式会社 | 半導体素子の製造方法 |
| US7179079B2 (en) | 2002-07-08 | 2007-02-20 | Molecular Imprints, Inc. | Conforming template for patterning liquids disposed on substrates |
| US20080160129A1 (en) | 2006-05-11 | 2008-07-03 | Molecular Imprints, Inc. | Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template |
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| JP5062521B2 (ja) | 2007-02-27 | 2012-10-31 | 独立行政法人理化学研究所 | レプリカモールドの製造方法およびレプリカモールド |
| KR101610180B1 (ko) | 2007-11-21 | 2016-04-07 | 캐논 나노테크놀로지즈 인코퍼레이티드 | 나노-임프린트 리소그래피용 다공성 주형 및 임프린팅 스택 |
| US8075299B2 (en) | 2008-10-21 | 2011-12-13 | Molecular Imprints, Inc. | Reduction of stress during template separation |
| US8652393B2 (en) | 2008-10-24 | 2014-02-18 | Molecular Imprints, Inc. | Strain and kinetics control during separation phase of imprint process |
| US8309008B2 (en) | 2008-10-30 | 2012-11-13 | Molecular Imprints, Inc. | Separation in an imprint lithography process |
| JP4940262B2 (ja) * | 2009-03-25 | 2012-05-30 | 株式会社東芝 | インプリントパターン形成方法 |
-
2009
- 2009-10-23 US US12/604,517 patent/US8652393B2/en active Active
- 2009-10-26 TW TW098136139A patent/TWI405659B/zh active
- 2009-10-26 JP JP2011533187A patent/JP2012507141A/ja active Pending
- 2009-10-26 TW TW102121927A patent/TWI541125B/zh active
- 2009-10-26 KR KR1020117011723A patent/KR20110086832A/ko not_active Ceased
- 2009-10-26 WO PCT/US2009/005803 patent/WO2010047837A2/en not_active Ceased
- 2009-10-26 CN CN2009801426456A patent/CN102203671B/zh active Active
- 2009-10-26 MY MYPI20111581 patent/MY152446A/en unknown
- 2009-10-26 EP EP09748532A patent/EP2350741B1/en active Active
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2014
- 2014-01-08 US US14/150,261 patent/US20140117574A1/en not_active Abandoned
- 2014-04-10 JP JP2014080783A patent/JP5728602B2/ja active Active
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2019
- 2019-01-31 US US16/264,318 patent/US11161280B2/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220031078A (ko) * | 2019-08-15 | 2022-03-11 | 캐논 가부시끼가이샤 | 평탄화 공정, 장치, 및 물품 제조 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20100102469A1 (en) | 2010-04-29 |
| JP2014160844A (ja) | 2014-09-04 |
| CN102203671B (zh) | 2013-07-17 |
| US8652393B2 (en) | 2014-02-18 |
| US20190232533A1 (en) | 2019-08-01 |
| TWI541125B (zh) | 2016-07-11 |
| JP5728602B2 (ja) | 2015-06-03 |
| EP2350741B1 (en) | 2012-08-29 |
| WO2010047837A3 (en) | 2010-10-07 |
| US20140117574A1 (en) | 2014-05-01 |
| JP2012507141A (ja) | 2012-03-22 |
| CN102203671A (zh) | 2011-09-28 |
| WO2010047837A2 (en) | 2010-04-29 |
| TWI405659B (zh) | 2013-08-21 |
| TW201345698A (zh) | 2013-11-16 |
| MY152446A (en) | 2014-09-30 |
| EP2350741A2 (en) | 2011-08-03 |
| TW201026482A (en) | 2010-07-16 |
| US11161280B2 (en) | 2021-11-02 |
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