JP2012507141A - インプリント・プロセスの分離段階における歪みと動特性の制御 - Google Patents
インプリント・プロセスの分離段階における歪みと動特性の制御 Download PDFInfo
- Publication number
- JP2012507141A JP2012507141A JP2011533187A JP2011533187A JP2012507141A JP 2012507141 A JP2012507141 A JP 2012507141A JP 2011533187 A JP2011533187 A JP 2011533187A JP 2011533187 A JP2011533187 A JP 2011533187A JP 2012507141 A JP2012507141 A JP 2012507141A
- Authority
- JP
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- Prior art keywords
- template
- substrate
- separation
- relief pattern
- solidified layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C37/00—Component parts, details, accessories or auxiliary operations, not covered by group B29C33/00 or B29C35/00
- B29C37/0003—Discharging moulded articles from the mould
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10813108P | 2008-10-24 | 2008-10-24 | |
| US61/108,131 | 2008-10-24 | ||
| US10955708P | 2008-10-30 | 2008-10-30 | |
| US61/109,557 | 2008-10-30 | ||
| US12/604,517 | 2009-10-23 | ||
| US12/604,517 US8652393B2 (en) | 2008-10-24 | 2009-10-23 | Strain and kinetics control during separation phase of imprint process |
| PCT/US2009/005803 WO2010047837A2 (en) | 2008-10-24 | 2009-10-26 | Strain and kinetics control during separation phase of imprint process |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014080783A Division JP5728602B2 (ja) | 2008-10-24 | 2014-04-10 | インプリント・プロセスの分離段階における歪みと動特性の制御 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012507141A true JP2012507141A (ja) | 2012-03-22 |
| JP2012507141A5 JP2012507141A5 (enExample) | 2012-12-06 |
Family
ID=42116691
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011533187A Pending JP2012507141A (ja) | 2008-10-24 | 2009-10-26 | インプリント・プロセスの分離段階における歪みと動特性の制御 |
| JP2014080783A Active JP5728602B2 (ja) | 2008-10-24 | 2014-04-10 | インプリント・プロセスの分離段階における歪みと動特性の制御 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014080783A Active JP5728602B2 (ja) | 2008-10-24 | 2014-04-10 | インプリント・プロセスの分離段階における歪みと動特性の制御 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US8652393B2 (enExample) |
| EP (1) | EP2350741B1 (enExample) |
| JP (2) | JP2012507141A (enExample) |
| KR (1) | KR20110086832A (enExample) |
| CN (1) | CN102203671B (enExample) |
| MY (1) | MY152446A (enExample) |
| TW (2) | TWI405659B (enExample) |
| WO (1) | WO2010047837A2 (enExample) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011116032A (ja) * | 2009-12-03 | 2011-06-16 | Dainippon Printing Co Ltd | インプリント用モールドおよび該モールドを用いたパターン形成方法 |
| JP2012254603A (ja) * | 2011-06-10 | 2012-12-27 | Dainippon Printing Co Ltd | 成形部材およびその製造方法 |
| JP2013070023A (ja) * | 2011-09-07 | 2013-04-18 | Canon Inc | インプリント装置、それを用いた物品の製造方法 |
| JP2013532369A (ja) * | 2010-04-27 | 2013-08-15 | モレキュラー・インプリンツ・インコーポレーテッド | ナノインプリント・リソグラフィのテンプレート製作方法およびそのシステム |
| JP2014033050A (ja) * | 2012-08-02 | 2014-02-20 | Toshiba Corp | インプリントシステム及びインプリント方法 |
| KR20160021053A (ko) * | 2014-08-14 | 2016-02-24 | 캐논 가부시끼가이샤 | 임프린트 장치 및 물품 제조 방법 |
| JP2017511604A (ja) * | 2014-03-31 | 2017-04-20 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | インプリント方法、そのためのコンピュータプログラム及び装置 |
| JP2018074159A (ja) * | 2016-10-31 | 2018-05-10 | キヤノン株式会社 | 基板からナノインプリントテンプレートを引き離す方法 |
| JP2020202269A (ja) * | 2019-06-07 | 2020-12-17 | キヤノン株式会社 | 成形装置、および物品製造方法 |
| JP2022544891A (ja) * | 2019-08-15 | 2022-10-24 | キヤノン株式会社 | 平坦化プロセス、装置、および物品の製造方法 |
| JP2023540833A (ja) * | 2020-09-01 | 2023-09-27 | イルミナ インコーポレイテッド | 固定具並びに関連するインプリントシステム及び方法 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2225784A1 (en) | 1995-06-30 | 1997-01-23 | Boston Scientific Corporation | Ultrasound imaging catheter with a cutting element |
| US8652393B2 (en) | 2008-10-24 | 2014-02-18 | Molecular Imprints, Inc. | Strain and kinetics control during separation phase of imprint process |
| JP4792096B2 (ja) * | 2009-03-19 | 2011-10-12 | 株式会社東芝 | テンプレートパターンの設計方法、テンプレートの製造方法及び半導体装置の製造方法。 |
| JP4940262B2 (ja) * | 2009-03-25 | 2012-05-30 | 株式会社東芝 | インプリントパターン形成方法 |
| JP5750992B2 (ja) * | 2011-04-27 | 2015-07-22 | 大日本印刷株式会社 | インプリント方法およびそれを実施するためのインプリント装置 |
| JP5875250B2 (ja) * | 2011-04-28 | 2016-03-02 | キヤノン株式会社 | インプリント装置、インプリント方法及びデバイス製造方法 |
| JP5535162B2 (ja) * | 2011-09-21 | 2014-07-02 | 株式会社東芝 | パターン形成装置、パターン形成方法及びパターン形成用プログラム |
| JP2013069920A (ja) * | 2011-09-22 | 2013-04-18 | Toshiba Corp | 成膜方法およびパターン形成方法 |
| JP6140966B2 (ja) | 2011-10-14 | 2017-06-07 | キヤノン株式会社 | インプリント装置、それを用いた物品の製造方法 |
| US20140239529A1 (en) * | 2012-09-28 | 2014-08-28 | Nanonex Corporation | System and Methods For Nano-Scale Manufacturing |
| JP6060796B2 (ja) * | 2013-04-22 | 2017-01-18 | 大日本印刷株式会社 | インプリントモールド及びダミーパターン設計方法 |
| CN103529644A (zh) * | 2013-10-25 | 2014-01-22 | 无锡英普林纳米科技有限公司 | 一种纳米压印机 |
| JP6774178B2 (ja) * | 2015-11-16 | 2020-10-21 | キヤノン株式会社 | 基板を処理する装置、及び物品の製造方法 |
| JP6335948B2 (ja) * | 2016-02-12 | 2018-05-30 | キヤノン株式会社 | インプリント装置および物品製造方法 |
| TWI672212B (zh) * | 2016-08-25 | 2019-09-21 | 國立成功大學 | 奈米壓印組合體及其壓印方法 |
| JP6762853B2 (ja) | 2016-11-11 | 2020-09-30 | キヤノン株式会社 | 装置、方法、及び物品製造方法 |
| US11442359B2 (en) | 2019-03-11 | 2022-09-13 | Canon Kabushiki Kaisha | Method of separating a template from a shaped film on a substrate |
Family Cites Families (65)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NO311797B1 (no) * | 1999-05-12 | 2002-01-28 | Thin Film Electronics Asa | Fremgangsmåter til mönstring av polymerfilmer og anvendelse av fremgangsmåtene |
| US6873087B1 (en) * | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
| SE515607C2 (sv) | 1999-12-10 | 2001-09-10 | Obducat Ab | Anordning och metod vid tillverkning av strukturer |
| JP3848070B2 (ja) * | 2000-09-27 | 2006-11-22 | 株式会社東芝 | パターン形成方法 |
| JP2003017390A (ja) | 2001-06-29 | 2003-01-17 | Toshiba Corp | パターン形成方法及びパターン形成に用いるマスク |
| DE20122197U1 (de) | 2001-06-30 | 2004-12-02 | Zf Friedrichshafen Ag | Schaltelement-Baugruppe für ein Getriebe |
| US20050064344A1 (en) | 2003-09-18 | 2005-03-24 | University Of Texas System Board Of Regents | Imprint lithography templates having alignment marks |
| JP3556647B2 (ja) | 2001-08-21 | 2004-08-18 | 沖電気工業株式会社 | 半導体素子の製造方法 |
| US7179079B2 (en) | 2002-07-08 | 2007-02-20 | Molecular Imprints, Inc. | Conforming template for patterning liquids disposed on substrates |
| US20080160129A1 (en) | 2006-05-11 | 2008-07-03 | Molecular Imprints, Inc. | Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template |
| US7442336B2 (en) | 2003-08-21 | 2008-10-28 | Molecular Imprints, Inc. | Capillary imprinting technique |
| US7077992B2 (en) | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
| US6932934B2 (en) | 2002-07-11 | 2005-08-23 | Molecular Imprints, Inc. | Formation of discontinuous films during an imprint lithography process |
| US7019819B2 (en) | 2002-11-13 | 2006-03-28 | Molecular Imprints, Inc. | Chucking system for modulating shapes of substrates |
| US6936194B2 (en) | 2002-09-05 | 2005-08-30 | Molecular Imprints, Inc. | Functional patterning material for imprint lithography processes |
| US8349241B2 (en) | 2002-10-04 | 2013-01-08 | Molecular Imprints, Inc. | Method to arrange features on a substrate to replicate features having minimal dimensional variability |
| US20040065252A1 (en) | 2002-10-04 | 2004-04-08 | Sreenivasan Sidlgata V. | Method of forming a layer on a substrate to facilitate fabrication of metrology standards |
| EP1567913B1 (en) | 2002-11-13 | 2009-07-29 | Molecular Imprints, Inc. | A chucking system and method for modulating shapes of substrates |
| US6980282B2 (en) | 2002-12-11 | 2005-12-27 | Molecular Imprints, Inc. | Method for modulating shapes of substrates |
| US7641840B2 (en) | 2002-11-13 | 2010-01-05 | Molecular Imprints, Inc. | Method for expelling gas positioned between a substrate and a mold |
| US20040168613A1 (en) | 2003-02-27 | 2004-09-02 | Molecular Imprints, Inc. | Composition and method to form a release layer |
| US7179396B2 (en) | 2003-03-25 | 2007-02-20 | Molecular Imprints, Inc. | Positive tone bi-layer imprint lithography method |
| EP1606834B1 (en) | 2003-03-27 | 2013-06-05 | Korea Institute Of Machinery & Materials | Uv nanoimprint lithography process using elementwise embossed stamp |
| US7396475B2 (en) | 2003-04-25 | 2008-07-08 | Molecular Imprints, Inc. | Method of forming stepped structures employing imprint lithography |
| US7157036B2 (en) | 2003-06-17 | 2007-01-02 | Molecular Imprints, Inc | Method to reduce adhesion between a conformable region and a pattern of a mold |
| US7150622B2 (en) | 2003-07-09 | 2006-12-19 | Molecular Imprints, Inc. | Systems for magnification and distortion correction for imprint lithography processes |
| JP2005085922A (ja) * | 2003-09-08 | 2005-03-31 | Canon Inc | マスク作製方法及び微小開口を有するマスク |
| JPWO2005057634A1 (ja) | 2003-12-11 | 2007-07-05 | 農工大ティー・エル・オー株式会社 | ナノインプリントを利用するパターン形成方法および該方法を実行する装置 |
| US8076386B2 (en) | 2004-02-23 | 2011-12-13 | Molecular Imprints, Inc. | Materials for imprint lithography |
| EP1594001B1 (en) | 2004-05-07 | 2015-12-30 | Obducat AB | Device and method for imprint lithography |
| WO2005119802A2 (en) | 2004-05-28 | 2005-12-15 | Board Of Regents, The University Of Texas System | Adaptive shape substrate support system and method |
| WO2005118914A2 (en) | 2004-05-28 | 2005-12-15 | Board Of Regents, The University Of Texas System | Substrate support system and method |
| US7768624B2 (en) | 2004-06-03 | 2010-08-03 | Board Of Regents, The University Of Texas System | Method for obtaining force combinations for template deformation using nullspace and methods optimization techniques |
| US20050270516A1 (en) * | 2004-06-03 | 2005-12-08 | Molecular Imprints, Inc. | System for magnification and distortion correction during nano-scale manufacturing |
| US20060081557A1 (en) | 2004-10-18 | 2006-04-20 | Molecular Imprints, Inc. | Low-k dielectric functional imprinting materials |
| US7363854B2 (en) | 2004-12-16 | 2008-04-29 | Asml Holding N.V. | System and method for patterning both sides of a substrate utilizing imprint lithography |
| US20060145398A1 (en) | 2004-12-30 | 2006-07-06 | Board Of Regents, The University Of Texas System | Release layer comprising diamond-like carbon (DLC) or doped DLC with tunable composition for imprint lithography templates and contact masks |
| US7349076B2 (en) * | 2005-01-14 | 2008-03-25 | The Institute For Technology Development | Video tracking-based real-time hyperspectral data acquisition |
| US7636999B2 (en) * | 2005-01-31 | 2009-12-29 | Molecular Imprints, Inc. | Method of retaining a substrate to a wafer chuck |
| US7635263B2 (en) * | 2005-01-31 | 2009-12-22 | Molecular Imprints, Inc. | Chucking system comprising an array of fluid chambers |
| US7798801B2 (en) * | 2005-01-31 | 2010-09-21 | Molecular Imprints, Inc. | Chucking system for nano-manufacturing |
| US7922474B2 (en) | 2005-02-17 | 2011-04-12 | Asml Netherlands B.V. | Imprint lithography |
| JP2006245072A (ja) | 2005-02-28 | 2006-09-14 | Canon Inc | パターン転写用モールドおよび転写装置 |
| US7762186B2 (en) | 2005-04-19 | 2010-07-27 | Asml Netherlands B.V. | Imprint lithography |
| US20070035717A1 (en) | 2005-08-12 | 2007-02-15 | Wei Wu | Contact lithography apparatus, system and method |
| JP2007081048A (ja) * | 2005-09-13 | 2007-03-29 | Canon Inc | ナノインプリント用型、装置および方法 |
| JP2007083626A (ja) * | 2005-09-22 | 2007-04-05 | Ricoh Co Ltd | 微細構造転写装置 |
| JP4533358B2 (ja) | 2005-10-18 | 2010-09-01 | キヤノン株式会社 | インプリント方法、インプリント装置およびチップの製造方法 |
| JP4923924B2 (ja) | 2005-11-22 | 2012-04-25 | コニカミノルタホールディングス株式会社 | インプリント装置及びインプリント方法 |
| US7803308B2 (en) | 2005-12-01 | 2010-09-28 | Molecular Imprints, Inc. | Technique for separating a mold from solidified imprinting material |
| US7670530B2 (en) | 2006-01-20 | 2010-03-02 | Molecular Imprints, Inc. | Patterning substrates employing multiple chucks |
| EP1957249B1 (en) | 2005-12-08 | 2014-11-12 | Canon Nanotechnologies, Inc. | Method and system for double-sided patterning of substrates |
| EP2007566A4 (en) * | 2006-04-03 | 2010-10-13 | Molecular Imprints Inc | CHUCK SYSTEM COMPRISING A NETWORK OF FLUID CHAMBERS |
| US20070231422A1 (en) | 2006-04-03 | 2007-10-04 | Molecular Imprints, Inc. | System to vary dimensions of a thin template |
| US20070238815A1 (en) | 2006-04-11 | 2007-10-11 | Lai On Products Industrial, Ltd. | Sponge-like sculpturing compound |
| WO2007136832A2 (en) | 2006-05-18 | 2007-11-29 | Molecular Imprints, Inc. | Method for expelling gas positioned between a substrate and a mold |
| JP4810319B2 (ja) * | 2006-06-09 | 2011-11-09 | キヤノン株式会社 | 加工装置及びデバイス製造方法 |
| JP4939134B2 (ja) | 2006-07-07 | 2012-05-23 | 株式会社日立ハイテクノロジーズ | インプリント装置およびインプリント方法 |
| JP4999069B2 (ja) * | 2007-01-23 | 2012-08-15 | 株式会社日立製作所 | ナノインプリント用スタンパ、ナノインプリント用スタンパの製造方法、およびナノインプリント用スタンパの表面処理剤 |
| JP5062521B2 (ja) | 2007-02-27 | 2012-10-31 | 独立行政法人理化学研究所 | レプリカモールドの製造方法およびレプリカモールド |
| US9778562B2 (en) | 2007-11-21 | 2017-10-03 | Canon Nanotechnologies, Inc. | Porous template and imprinting stack for nano-imprint lithography |
| US8075299B2 (en) | 2008-10-21 | 2011-12-13 | Molecular Imprints, Inc. | Reduction of stress during template separation |
| US8652393B2 (en) | 2008-10-24 | 2014-02-18 | Molecular Imprints, Inc. | Strain and kinetics control during separation phase of imprint process |
| US8309008B2 (en) | 2008-10-30 | 2012-11-13 | Molecular Imprints, Inc. | Separation in an imprint lithography process |
| JP4940262B2 (ja) * | 2009-03-25 | 2012-05-30 | 株式会社東芝 | インプリントパターン形成方法 |
-
2009
- 2009-10-23 US US12/604,517 patent/US8652393B2/en active Active
- 2009-10-26 JP JP2011533187A patent/JP2012507141A/ja active Pending
- 2009-10-26 TW TW098136139A patent/TWI405659B/zh active
- 2009-10-26 CN CN2009801426456A patent/CN102203671B/zh active Active
- 2009-10-26 TW TW102121927A patent/TWI541125B/zh active
- 2009-10-26 EP EP09748532A patent/EP2350741B1/en active Active
- 2009-10-26 KR KR1020117011723A patent/KR20110086832A/ko not_active Ceased
- 2009-10-26 MY MYPI20111581 patent/MY152446A/en unknown
- 2009-10-26 WO PCT/US2009/005803 patent/WO2010047837A2/en not_active Ceased
-
2014
- 2014-01-08 US US14/150,261 patent/US20140117574A1/en not_active Abandoned
- 2014-04-10 JP JP2014080783A patent/JP5728602B2/ja active Active
-
2019
- 2019-01-31 US US16/264,318 patent/US11161280B2/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2011116032A (ja) * | 2009-12-03 | 2011-06-16 | Dainippon Printing Co Ltd | インプリント用モールドおよび該モールドを用いたパターン形成方法 |
| JP2013532369A (ja) * | 2010-04-27 | 2013-08-15 | モレキュラー・インプリンツ・インコーポレーテッド | ナノインプリント・リソグラフィのテンプレート製作方法およびそのシステム |
| JP2015195409A (ja) * | 2010-04-27 | 2015-11-05 | モレキュラー・インプリンツ・インコーポレーテッド | ナノインプリント・リソグラフィのテンプレート製作方法およびそのシステム |
| US11020894B2 (en) | 2010-04-27 | 2021-06-01 | Molecular Imprints, Inc. | Safe separation for nano imprinting |
| JP2012254603A (ja) * | 2011-06-10 | 2012-12-27 | Dainippon Printing Co Ltd | 成形部材およびその製造方法 |
| JP2013070023A (ja) * | 2011-09-07 | 2013-04-18 | Canon Inc | インプリント装置、それを用いた物品の製造方法 |
| JP2014033050A (ja) * | 2012-08-02 | 2014-02-20 | Toshiba Corp | インプリントシステム及びインプリント方法 |
| JP2017511604A (ja) * | 2014-03-31 | 2017-04-20 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | インプリント方法、そのためのコンピュータプログラム及び装置 |
| JP2016042501A (ja) * | 2014-08-14 | 2016-03-31 | キヤノン株式会社 | インプリント装置及び物品の製造方法 |
| KR101940365B1 (ko) * | 2014-08-14 | 2019-01-18 | 캐논 가부시끼가이샤 | 임프린트 장치 및 물품 제조 방법 |
| US10514599B2 (en) | 2014-08-14 | 2019-12-24 | Canon Kabushiki Kaisha | Imprint apparatus and method of manufacturing article |
| KR20160021053A (ko) * | 2014-08-14 | 2016-02-24 | 캐논 가부시끼가이샤 | 임프린트 장치 및 물품 제조 방법 |
| JP2018074159A (ja) * | 2016-10-31 | 2018-05-10 | キヤノン株式会社 | 基板からナノインプリントテンプレートを引き離す方法 |
| JP2020202269A (ja) * | 2019-06-07 | 2020-12-17 | キヤノン株式会社 | 成形装置、および物品製造方法 |
| JP7284639B2 (ja) | 2019-06-07 | 2023-05-31 | キヤノン株式会社 | 成形装置、および物品製造方法 |
| JP2022544891A (ja) * | 2019-08-15 | 2022-10-24 | キヤノン株式会社 | 平坦化プロセス、装置、および物品の製造方法 |
| JP2023540833A (ja) * | 2020-09-01 | 2023-09-27 | イルミナ インコーポレイテッド | 固定具並びに関連するインプリントシステム及び方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110086832A (ko) | 2011-08-01 |
| TW201345698A (zh) | 2013-11-16 |
| TWI405659B (zh) | 2013-08-21 |
| US8652393B2 (en) | 2014-02-18 |
| MY152446A (en) | 2014-09-30 |
| TWI541125B (zh) | 2016-07-11 |
| CN102203671A (zh) | 2011-09-28 |
| EP2350741B1 (en) | 2012-08-29 |
| EP2350741A2 (en) | 2011-08-03 |
| US20140117574A1 (en) | 2014-05-01 |
| WO2010047837A3 (en) | 2010-10-07 |
| JP5728602B2 (ja) | 2015-06-03 |
| US20190232533A1 (en) | 2019-08-01 |
| CN102203671B (zh) | 2013-07-17 |
| WO2010047837A2 (en) | 2010-04-29 |
| US11161280B2 (en) | 2021-11-02 |
| US20100102469A1 (en) | 2010-04-29 |
| JP2014160844A (ja) | 2014-09-04 |
| TW201026482A (en) | 2010-07-16 |
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