KR20110085929A - 실리콘 기판상의 패턴 복구 방법 및 장치 - Google Patents

실리콘 기판상의 패턴 복구 방법 및 장치 Download PDF

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Publication number
KR20110085929A
KR20110085929A KR1020110005479A KR20110005479A KR20110085929A KR 20110085929 A KR20110085929 A KR 20110085929A KR 1020110005479 A KR1020110005479 A KR 1020110005479A KR 20110005479 A KR20110005479 A KR 20110005479A KR 20110085929 A KR20110085929 A KR 20110085929A
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KR
South Korea
Prior art keywords
silicon substrate
pattern
heating
recovery method
chamber
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Ceased
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KR1020110005479A
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English (en)
Korean (ko)
Inventor
에이이치 니시무라
시게루 다하라
후미코 야마시타
Original Assignee
도쿄엘렉트론가부시키가이샤
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Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20110085929A publication Critical patent/KR20110085929A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H01L21/02049—Dry cleaning only with gaseous HF
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
KR1020110005479A 2010-01-20 2011-01-19 실리콘 기판상의 패턴 복구 방법 및 장치 Ceased KR20110085929A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-009979 2010-01-20
JP2010009979A JP5629098B2 (ja) 2010-01-20 2010-01-20 シリコン基板上のパターン修復方法

Publications (1)

Publication Number Publication Date
KR20110085929A true KR20110085929A (ko) 2011-07-27

Family

ID=44022937

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110005479A Ceased KR20110085929A (ko) 2010-01-20 2011-01-19 실리콘 기판상의 패턴 복구 방법 및 장치

Country Status (6)

Country Link
US (1) US20110174337A1 (enExample)
EP (1) EP2348524B1 (enExample)
JP (1) JP5629098B2 (enExample)
KR (1) KR20110085929A (enExample)
CN (1) CN102140638A (enExample)
TW (1) TWI534857B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190018728A (ko) * 2016-09-16 2019-02-25 가부시키가이샤 스크린 홀딩스 패턴 도괴 회복 방법, 기판 처리 방법 및 기판 처리 장치

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8440573B2 (en) 2010-01-26 2013-05-14 Lam Research Corporation Method and apparatus for pattern collapse free wet processing of semiconductor devices
CN105990096B (zh) * 2015-02-15 2020-03-27 盛美半导体设备(上海)股份有限公司 半导体结构的清洗方法
KR102056139B1 (ko) * 2015-07-13 2019-12-16 후지필름 가부시키가이샤 패턴 구조의 처리 방법, 전자 디바이스의 제조 방법 및 패턴 구조의 붕괴 억제용 처리액
JP6466315B2 (ja) * 2015-12-25 2019-02-06 東京エレクトロン株式会社 基板処理方法及び基板処理システム
JP2021022598A (ja) * 2019-07-24 2021-02-18 東京エレクトロン株式会社 基板処理方法、基板処理装置及び配線パターン形成システム
JP7130791B2 (ja) * 2021-02-08 2022-09-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

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JPH0319217A (ja) * 1989-06-15 1991-01-28 Nec Corp 微細パターン形成方法
US5017998A (en) * 1989-09-14 1991-05-21 Fujitsu Limited Semiconductor device using SOI substrate
JP2632262B2 (ja) 1991-08-20 1997-07-23 大日本スクリーン製造株式会社 シリコンウエハ上のコンタクトホール内の自然酸化膜の除去方法
JPH05129263A (ja) * 1991-11-01 1993-05-25 Kawasaki Steel Corp 半導体基板の処理方法
JPH05326478A (ja) * 1992-05-26 1993-12-10 Nippon Steel Corp ウェーハの洗浄方法およびその装置
JPH08264507A (ja) 1995-03-20 1996-10-11 Matsushita Electron Corp シリコンのエッチング方法
JPH11340183A (ja) 1998-05-27 1999-12-10 Morita Kagaku Kogyo Kk 半導体装置用洗浄液およびそれを用いた半導体装置の製 造方法
KR100486690B1 (ko) * 2002-11-29 2005-05-03 삼성전자주식회사 기판 이송 모듈의 오염을 제어할 수 있는 기판 처리 장치및 방법
US7877161B2 (en) * 2003-03-17 2011-01-25 Tokyo Electron Limited Method and system for performing a chemical oxide removal process
US7094613B2 (en) * 2003-10-21 2006-08-22 Applied Materials, Inc. Method for controlling accuracy and repeatability of an etch process
KR100542464B1 (ko) * 2003-11-20 2006-01-11 학교법인 한양학원 원자력간 현미경 리소그래피 기술을 이용한 극자외선 노광공정용 반사형 다층 박막 미러의 제조방법
CN101156233B (zh) * 2005-03-31 2010-12-08 东京毅力科创株式会社 氧化硅膜的制造方法和等离子体处理装置
JP5319868B2 (ja) * 2005-10-17 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US20070224811A1 (en) * 2006-03-16 2007-09-27 Xinming Wang Substrate processing method and substrate processing apparatus
JP2007311540A (ja) * 2006-05-18 2007-11-29 Renesas Technology Corp 半導体装置の製造方法
US20080045030A1 (en) * 2006-08-15 2008-02-21 Shigeru Tahara Substrate processing method, substrate processing system and storage medium
JP5233097B2 (ja) * 2006-08-15 2013-07-10 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体
JP4961894B2 (ja) * 2006-08-25 2012-06-27 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
US20080085090A1 (en) * 2006-10-10 2008-04-10 Meek David W Crimp and crimp mechanism for fiber optic connector
JP5204964B2 (ja) * 2006-10-17 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2008186865A (ja) * 2007-01-26 2008-08-14 Tokyo Electron Ltd 基板処理装置
JP4818140B2 (ja) * 2007-01-31 2011-11-16 東京エレクトロン株式会社 基板の処理方法及び基板処理装置
JP4776575B2 (ja) * 2007-03-28 2011-09-21 株式会社東芝 表面処理方法、エッチング処理方法および電子デバイスの製造方法
JP5374039B2 (ja) * 2007-12-27 2013-12-25 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190018728A (ko) * 2016-09-16 2019-02-25 가부시키가이샤 스크린 홀딩스 패턴 도괴 회복 방법, 기판 처리 방법 및 기판 처리 장치

Also Published As

Publication number Publication date
JP2011151114A (ja) 2011-08-04
TW201142919A (en) 2011-12-01
EP2348524B1 (en) 2019-03-20
US20110174337A1 (en) 2011-07-21
JP5629098B2 (ja) 2014-11-19
CN102140638A (zh) 2011-08-03
TWI534857B (zh) 2016-05-21
EP2348524A3 (en) 2011-11-09
EP2348524A2 (en) 2011-07-27

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