CN102140638A - 硅基板上的图案修复方法和硅基板上的图案修复装置 - Google Patents

硅基板上的图案修复方法和硅基板上的图案修复装置 Download PDF

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Publication number
CN102140638A
CN102140638A CN2011100253660A CN201110025366A CN102140638A CN 102140638 A CN102140638 A CN 102140638A CN 2011100253660 A CN2011100253660 A CN 2011100253660A CN 201110025366 A CN201110025366 A CN 201110025366A CN 102140638 A CN102140638 A CN 102140638A
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CN
China
Prior art keywords
silicon substrate
pattern
foreign matter
restorative procedure
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011100253660A
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English (en)
Chinese (zh)
Inventor
西村荣一
田原慈
山下扶美子
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN102140638A publication Critical patent/CN102140638A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H01L21/02049—Dry cleaning only with gaseous HF
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN2011100253660A 2010-01-20 2011-01-19 硅基板上的图案修复方法和硅基板上的图案修复装置 Pending CN102140638A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-009979 2010-01-20
JP2010009979A JP5629098B2 (ja) 2010-01-20 2010-01-20 シリコン基板上のパターン修復方法

Publications (1)

Publication Number Publication Date
CN102140638A true CN102140638A (zh) 2011-08-03

Family

ID=44022937

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011100253660A Pending CN102140638A (zh) 2010-01-20 2011-01-19 硅基板上的图案修复方法和硅基板上的图案修复装置

Country Status (6)

Country Link
US (1) US20110174337A1 (enExample)
EP (1) EP2348524B1 (enExample)
JP (1) JP5629098B2 (enExample)
KR (1) KR20110085929A (enExample)
CN (1) CN102140638A (enExample)
TW (1) TWI534857B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
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CN105990096A (zh) * 2015-02-15 2016-10-05 盛美半导体设备（上海）有限公司 半导体结构的清洗方法
CN109496346A (zh) * 2016-09-16 2019-03-19 株式会社斯库林集团 图案倒塌恢复方法、基板处理方法以及基板处理装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8440573B2 (en) 2010-01-26 2013-05-14 Lam Research Corporation Method and apparatus for pattern collapse free wet processing of semiconductor devices
JP6533576B2 (ja) * 2015-07-13 2019-06-19 富士フイルム株式会社 パターン構造の処理方法、電子デバイスの製造方法およびパターン構造の倒壊抑制用処理液
JP6466315B2 (ja) * 2015-12-25 2019-02-06 東京エレクトロン株式会社 基板処理方法及び基板処理システム
JP2021022598A (ja) * 2019-07-24 2021-02-18 東京エレクトロン株式会社 基板処理方法、基板処理装置及び配線パターン形成システム
JP7130791B2 (ja) * 2021-02-08 2022-09-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

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CN1609711A (zh) * 2003-10-21 2005-04-27 应用材料有限公司 控制蚀刻工序的精确度和再现性的方法
US20080182421A1 (en) * 2007-01-31 2008-07-31 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
CN101276746A (zh) * 2007-03-28 2008-10-01 株式会社东芝 表面处理方法、蚀刻处理方法及电子装置的制造方法

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US5017998A (en) * 1989-09-14 1991-05-21 Fujitsu Limited Semiconductor device using SOI substrate
JP2632262B2 (ja) 1991-08-20 1997-07-23 大日本スクリーン製造株式会社 シリコンウエハ上のコンタクトホール内の自然酸化膜の除去方法
JPH05129263A (ja) * 1991-11-01 1993-05-25 Kawasaki Steel Corp 半導体基板の処理方法
JPH05326478A (ja) * 1992-05-26 1993-12-10 Nippon Steel Corp ウェーハの洗浄方法およびその装置
JPH08264507A (ja) 1995-03-20 1996-10-11 Matsushita Electron Corp シリコンのエッチング方法
JPH11340183A (ja) 1998-05-27 1999-12-10 Morita Kagaku Kogyo Kk 半導体装置用洗浄液およびそれを用いた半導体装置の製 造方法
KR100486690B1 (ko) * 2002-11-29 2005-05-03 삼성전자주식회사 기판 이송 모듈의 오염을 제어할 수 있는 기판 처리 장치및 방법
US7877161B2 (en) * 2003-03-17 2011-01-25 Tokyo Electron Limited Method and system for performing a chemical oxide removal process
KR100542464B1 (ko) * 2003-11-20 2006-01-11 학교법인 한양학원 원자력간 현미경 리소그래피 기술을 이용한 극자외선 노광공정용 반사형 다층 박막 미러의 제조방법
EP1865548A4 (en) * 2005-03-31 2011-01-05 Tokyo Electron Ltd METHOD FOR PRODUCING A SILICON OXIDE FILM, A CONTROL PROGRAM THEREFOR, A RECORDING MEDIUM AND A PLASMA PROCESSING DEVICE
JP5319868B2 (ja) * 2005-10-17 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
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JP5233097B2 (ja) * 2006-08-15 2013-07-10 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体
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JP5374039B2 (ja) * 2007-12-27 2013-12-25 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1609711A (zh) * 2003-10-21 2005-04-27 应用材料有限公司 控制蚀刻工序的精确度和再现性的方法
US20080182421A1 (en) * 2007-01-31 2008-07-31 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
CN101276746A (zh) * 2007-03-28 2008-10-01 株式会社东芝 表面处理方法、蚀刻处理方法及电子装置的制造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105990096A (zh) * 2015-02-15 2016-10-05 盛美半导体设备（上海）有限公司 半导体结构的清洗方法
CN105990096B (zh) * 2015-02-15 2020-03-27 盛美半导体设备(上海)股份有限公司 半导体结构的清洗方法
CN109496346A (zh) * 2016-09-16 2019-03-19 株式会社斯库林集团 图案倒塌恢复方法、基板处理方法以及基板处理装置
CN109496346B (zh) * 2016-09-16 2023-06-06 株式会社斯库林集团 图案倒塌恢复方法、基板处理方法以及基板处理装置

Also Published As

Publication number Publication date
EP2348524A2 (en) 2011-07-27
KR20110085929A (ko) 2011-07-27
US20110174337A1 (en) 2011-07-21
TW201142919A (en) 2011-12-01
TWI534857B (zh) 2016-05-21
EP2348524A3 (en) 2011-11-09
JP2011151114A (ja) 2011-08-04
EP2348524B1 (en) 2019-03-20
JP5629098B2 (ja) 2014-11-19

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Application publication date: 20110803