JP5629098B2 - シリコン基板上のパターン修復方法 - Google Patents

シリコン基板上のパターン修復方法 Download PDF

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Publication number
JP5629098B2
JP5629098B2 JP2010009979A JP2010009979A JP5629098B2 JP 5629098 B2 JP5629098 B2 JP 5629098B2 JP 2010009979 A JP2010009979 A JP 2010009979A JP 2010009979 A JP2010009979 A JP 2010009979A JP 5629098 B2 JP5629098 B2 JP 5629098B2
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Japan
Prior art keywords
silicon substrate
pattern
repairing
patterns
foreign matter
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JP2010009979A
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English (en)
Japanese (ja)
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JP2011151114A (ja
JP2011151114A5 (enExample
Inventor
栄一 西村
栄一 西村
慈 田原
慈 田原
扶美子 山下
扶美子 山下
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Priority to JP2010009979A priority Critical patent/JP5629098B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to EP11151363.6A priority patent/EP2348524B1/en
Priority to CN2011100253660A priority patent/CN102140638A/zh
Priority to TW100101954A priority patent/TWI534857B/zh
Priority to KR1020110005479A priority patent/KR20110085929A/ko
Priority to US13/010,203 priority patent/US20110174337A1/en
Publication of JP2011151114A publication Critical patent/JP2011151114A/ja
Publication of JP2011151114A5 publication Critical patent/JP2011151114A5/ja
Application granted granted Critical
Publication of JP5629098B2 publication Critical patent/JP5629098B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H01L21/02049—Dry cleaning only with gaseous HF
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
JP2010009979A 2010-01-20 2010-01-20 シリコン基板上のパターン修復方法 Active JP5629098B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010009979A JP5629098B2 (ja) 2010-01-20 2010-01-20 シリコン基板上のパターン修復方法
CN2011100253660A CN102140638A (zh) 2010-01-20 2011-01-19 硅基板上的图案修复方法和硅基板上的图案修复装置
TW100101954A TWI534857B (zh) 2010-01-20 2011-01-19 Method of Pattern Repair on Silicon Substrate
KR1020110005479A KR20110085929A (ko) 2010-01-20 2011-01-19 실리콘 기판상의 패턴 복구 방법 및 장치
EP11151363.6A EP2348524B1 (en) 2010-01-20 2011-01-19 Method for recovering pattern on silicon substrate
US13/010,203 US20110174337A1 (en) 2010-01-20 2011-01-20 Method and apparatus for recovering pattern on silicon substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010009979A JP5629098B2 (ja) 2010-01-20 2010-01-20 シリコン基板上のパターン修復方法

Publications (3)

Publication Number Publication Date
JP2011151114A JP2011151114A (ja) 2011-08-04
JP2011151114A5 JP2011151114A5 (enExample) 2013-03-07
JP5629098B2 true JP5629098B2 (ja) 2014-11-19

Family

ID=44022937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010009979A Active JP5629098B2 (ja) 2010-01-20 2010-01-20 シリコン基板上のパターン修復方法

Country Status (6)

Country Link
US (1) US20110174337A1 (enExample)
EP (1) EP2348524B1 (enExample)
JP (1) JP5629098B2 (enExample)
KR (1) KR20110085929A (enExample)
CN (1) CN102140638A (enExample)
TW (1) TWI534857B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8440573B2 (en) * 2010-01-26 2013-05-14 Lam Research Corporation Method and apparatus for pattern collapse free wet processing of semiconductor devices
CN105990096B (zh) * 2015-02-15 2020-03-27 盛美半导体设备(上海)股份有限公司 半导体结构的清洗方法
JP6533576B2 (ja) 2015-07-13 2019-06-19 富士フイルム株式会社 パターン構造の処理方法、電子デバイスの製造方法およびパターン構造の倒壊抑制用処理液
JP6466315B2 (ja) * 2015-12-25 2019-02-06 東京エレクトロン株式会社 基板処理方法及び基板処理システム
JP6875811B2 (ja) 2016-09-16 2021-05-26 株式会社Ｓｃｒｅｅｎホールディングス パターン倒壊回復方法、基板処理方法および基板処理装置
JP2021022598A (ja) * 2019-07-24 2021-02-18 東京エレクトロン株式会社 基板処理方法、基板処理装置及び配線パターン形成システム
JP7130791B2 (ja) * 2021-02-08 2022-09-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0319217A (ja) * 1989-06-15 1991-01-28 Nec Corp 微細パターン形成方法
US5017998A (en) * 1989-09-14 1991-05-21 Fujitsu Limited Semiconductor device using SOI substrate
JP2632262B2 (ja) 1991-08-20 1997-07-23 大日本スクリーン製造株式会社 シリコンウエハ上のコンタクトホール内の自然酸化膜の除去方法
JPH05129263A (ja) * 1991-11-01 1993-05-25 Kawasaki Steel Corp 半導体基板の処理方法
JPH05326478A (ja) * 1992-05-26 1993-12-10 Nippon Steel Corp ウェーハの洗浄方法およびその装置
JPH08264507A (ja) 1995-03-20 1996-10-11 Matsushita Electron Corp シリコンのエッチング方法
JPH11340183A (ja) 1998-05-27 1999-12-10 Morita Kagaku Kogyo Kk 半導体装置用洗浄液およびそれを用いた半導体装置の製 造方法
KR100486690B1 (ko) * 2002-11-29 2005-05-03 삼성전자주식회사 기판 이송 모듈의 오염을 제어할 수 있는 기판 처리 장치및 방법
US7877161B2 (en) * 2003-03-17 2011-01-25 Tokyo Electron Limited Method and system for performing a chemical oxide removal process
US7094613B2 (en) * 2003-10-21 2006-08-22 Applied Materials, Inc. Method for controlling accuracy and repeatability of an etch process
KR100542464B1 (ko) * 2003-11-20 2006-01-11 학교법인 한양학원 원자력간 현미경 리소그래피 기술을 이용한 극자외선 노광공정용 반사형 다층 박막 미러의 제조방법
CN101156233B (zh) * 2005-03-31 2010-12-08 东京毅力科创株式会社 氧化硅膜的制造方法和等离子体处理装置
JP5319868B2 (ja) * 2005-10-17 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US20070224811A1 (en) * 2006-03-16 2007-09-27 Xinming Wang Substrate processing method and substrate processing apparatus
JP2007311540A (ja) * 2006-05-18 2007-11-29 Renesas Technology Corp 半導体装置の製造方法
JP5233097B2 (ja) * 2006-08-15 2013-07-10 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体
US20080045030A1 (en) * 2006-08-15 2008-02-21 Shigeru Tahara Substrate processing method, substrate processing system and storage medium
JP4961894B2 (ja) * 2006-08-25 2012-06-27 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
US20080085090A1 (en) * 2006-10-10 2008-04-10 Meek David W Crimp and crimp mechanism for fiber optic connector
JP5204964B2 (ja) * 2006-10-17 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2008186865A (ja) * 2007-01-26 2008-08-14 Tokyo Electron Ltd 基板処理装置
JP4818140B2 (ja) * 2007-01-31 2011-11-16 東京エレクトロン株式会社 基板の処理方法及び基板処理装置
JP4776575B2 (ja) * 2007-03-28 2011-09-21 株式会社東芝 表面処理方法、エッチング処理方法および電子デバイスの製造方法
JP5374039B2 (ja) * 2007-12-27 2013-12-25 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体

Also Published As

Publication number Publication date
US20110174337A1 (en) 2011-07-21
EP2348524A3 (en) 2011-11-09
TW201142919A (en) 2011-12-01
JP2011151114A (ja) 2011-08-04
CN102140638A (zh) 2011-08-03
TWI534857B (zh) 2016-05-21
EP2348524B1 (en) 2019-03-20
KR20110085929A (ko) 2011-07-27
EP2348524A2 (en) 2011-07-27

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