KR20090102031A - 마이크로 히터 어레이, 이를 이용한 ｐｎ 접합 형성방법,및 마이크로 히터 어레이 및 ｐｎ 접합을 포함하는 ｐｎ접합 소자 - Google Patents

마이크로 히터 어레이, 이를 이용한 ｐｎ 접합 형성방법,및 마이크로 히터 어레이 및 ｐｎ 접합을 포함하는 ｐｎ접합 소자

Info

Publication number
KR20090102031A
KR20090102031A KR1020080027233A KR20080027233A KR20090102031A KR 20090102031 A KR20090102031 A KR 20090102031A KR 1020080027233 A KR1020080027233 A KR 1020080027233A KR 20080027233 A KR20080027233 A KR 20080027233A KR 20090102031 A KR20090102031 A KR 20090102031A
Authority
KR
South Korea
Prior art keywords
heating
micro heater
junction
substrate
material layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020080027233A
Other languages
English (en)
Korean (ko)
Inventor
최준희
박성수
안드레이 줄카니브
한재용
정득석
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020080027233A priority Critical patent/KR20090102031A/ko
Priority to US12/232,711 priority patent/US8053854B2/en
Priority to JP2008309025A priority patent/JP5474341B2/ja
Priority to CN2008101859144A priority patent/CN101545136B/zh
Publication of KR20090102031A publication Critical patent/KR20090102031A/ko
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3462—Nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3464—Nanotubes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Resistance Heating (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
KR1020080027233A 2008-03-25 2008-03-25 마이크로 히터 어레이, 이를 이용한 ｐｎ 접합 형성방법,및 마이크로 히터 어레이 및 ｐｎ 접합을 포함하는 ｐｎ접합 소자 Ceased KR20090102031A (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020080027233A KR20090102031A (ko) 2008-03-25 2008-03-25 마이크로 히터 어레이, 이를 이용한 ｐｎ 접합 형성방법,및 마이크로 히터 어레이 및 ｐｎ 접합을 포함하는 ｐｎ접합 소자
US12/232,711 US8053854B2 (en) 2008-03-25 2008-09-23 Micro-heater arrays and pn-junction devices having micro-heater arrays, and methods for fabricating the same
JP2008309025A JP5474341B2 (ja) 2008-03-25 2008-12-03 マイクロヒーターアレイ及びマイクロヒーターアレイを備えたｐｎ接合、並びにその形成方法
CN2008101859144A CN101545136B (zh) 2008-03-25 2008-12-16 微加热器阵列、具有其的pn结器件及制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080027233A KR20090102031A (ko) 2008-03-25 2008-03-25 마이크로 히터 어레이, 이를 이용한 ｐｎ 접합 형성방법,및 마이크로 히터 어레이 및 ｐｎ 접합을 포함하는 ｐｎ접합 소자

Publications (1)

Publication Number Publication Date
KR20090102031A true KR20090102031A (ko) 2009-09-30

Family

ID=41115826

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080027233A Ceased KR20090102031A (ko) 2008-03-25 2008-03-25 마이크로 히터 어레이, 이를 이용한 ｐｎ 접합 형성방법,및 마이크로 히터 어레이 및 ｐｎ 접합을 포함하는 ｐｎ접합 소자

Country Status (4)

Country Link
US (1) US8053854B2 (https=)
JP (1) JP5474341B2 (https=)
KR (1) KR20090102031A (https=)
CN (1) CN101545136B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11247462B2 (en) 2017-04-03 2022-02-15 Board Of Trustees Of The University Of Arkansas Selective resistive sintering—a new additive manufacturing method
CN116363644A (zh) * 2023-03-03 2023-06-30 深圳赛意法微电子有限公司 Pn结区域检测方法
CN116046089B (zh) * 2023-03-23 2023-07-18 东南大学 一种基于碳化硅pn结测温的高温MEMS热式流量传感器及制备方法
CN118516741A (zh) * 2024-04-28 2024-08-20 厦门城市职业学院(厦门开放大学) 一种用于定向凝固的加热工艺
CN119826912B (zh) * 2024-12-31 2025-10-03 西南科技大学 量热式微流量传感器的电极及其制备方法

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JPH0765179B2 (ja) * 1987-05-15 1995-07-12 日本電信電話株式会社 化学的気相成長方法
JPH0731053Y2 (ja) * 1988-07-25 1995-07-19 牧 厚 ユニット式床暖房装置
JPH06302530A (ja) * 1993-04-12 1994-10-28 Nec Kansai Ltd 半導体装置の製造装置
JPH09190871A (ja) * 1996-01-11 1997-07-22 Canon Inc 加熱装置及びその温度制御方法
JP3536516B2 (ja) * 1996-02-28 2004-06-14 株式会社ニコン フローティング構造の形成方法
US6602345B1 (en) * 1999-06-29 2003-08-05 American Crystal Technologies, Inc., Heater arrangement for crystal growth furnace
JP2003047840A (ja) * 2001-08-06 2003-02-18 Yamatake Corp マイクロリアクタ
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JP2003094395A (ja) * 2001-09-26 2003-04-03 Olympus Optical Co Ltd アレイ化マイクロ流体素子
JP3914031B2 (ja) * 2001-11-07 2007-05-16 助川電気工業株式会社 マイクロヒータ
CN1244453C (zh) * 2003-02-20 2006-03-08 祥群科技股份有限公司 热转印元件的结构及制造方法
JP5011628B2 (ja) * 2004-01-20 2012-08-29 日亜化学工業株式会社 半導体発光素子
CN100376683C (zh) * 2005-01-14 2008-03-26 北京大学 聚合酶链式反应芯片微系统
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KR20090106750A (ko) * 2008-04-07 2009-10-12 삼성전자주식회사 마이크로 히터 어레이를 이용한 멀티 스택형 태양 전지 및이의 제조 방법
KR20100086735A (ko) * 2009-01-23 2010-08-02 삼성전자주식회사 실리콘 막 형성 방법, ｐｎ 접합 형성 방법 및 이를 이용하여 형성된 ｐｎ 접합
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Also Published As

Publication number Publication date
US8053854B2 (en) 2011-11-08
CN101545136A (zh) 2009-09-30
US20090243040A1 (en) 2009-10-01
JP2009238732A (ja) 2009-10-15
JP5474341B2 (ja) 2014-04-16
CN101545136B (zh) 2013-08-07

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