JP5474341B2 - マイクロヒーターアレイ及びマイクロヒーターアレイを備えたｐｎ接合、並びにその形成方法 - Google Patents

マイクロヒーターアレイ及びマイクロヒーターアレイを備えたｐｎ接合、並びにその形成方法 Download PDF

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Publication number
JP5474341B2
JP5474341B2 JP2008309025A JP2008309025A JP5474341B2 JP 5474341 B2 JP5474341 B2 JP 5474341B2 JP 2008309025 A JP2008309025 A JP 2008309025A JP 2008309025 A JP2008309025 A JP 2008309025A JP 5474341 B2 JP5474341 B2 JP 5474341B2
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Japan
Prior art keywords
heating unit
heating
junction
material layer
type material
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JP2008309025A
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Japanese (ja)
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JP2009238732A5 (https=
JP2009238732A (ja
Inventor
濬 熙 崔
性 秀 朴
ゾウルカーネフ アンドレイ
在 鎔 韓
得 錫 鄭
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3462—Nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3464—Nanotubes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Resistance Heating (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
JP2008309025A 2008-03-25 2008-12-03 マイクロヒーターアレイ及びマイクロヒーターアレイを備えたｐｎ接合、並びにその形成方法 Expired - Fee Related JP5474341B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080027233A KR20090102031A (ko) 2008-03-25 2008-03-25 마이크로 히터 어레이, 이를 이용한 ｐｎ 접합 형성방법,및 마이크로 히터 어레이 및 ｐｎ 접합을 포함하는 ｐｎ접합 소자
KR10-2008-0027233 2008-03-25

Publications (3)

Publication Number Publication Date
JP2009238732A JP2009238732A (ja) 2009-10-15
JP2009238732A5 JP2009238732A5 (https=) 2012-11-29
JP5474341B2 true JP5474341B2 (ja) 2014-04-16

Family

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JP2008309025A Expired - Fee Related JP5474341B2 (ja) 2008-03-25 2008-12-03 マイクロヒーターアレイ及びマイクロヒーターアレイを備えたｐｎ接合、並びにその形成方法

Country Status (4)

Country Link
US (1) US8053854B2 (https=)
JP (1) JP5474341B2 (https=)
KR (1) KR20090102031A (https=)
CN (1) CN101545136B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11247462B2 (en) 2017-04-03 2022-02-15 Board Of Trustees Of The University Of Arkansas Selective resistive sintering—a new additive manufacturing method
CN116363644A (zh) * 2023-03-03 2023-06-30 深圳赛意法微电子有限公司 Pn结区域检测方法
CN116046089B (zh) * 2023-03-23 2023-07-18 东南大学 一种基于碳化硅pn结测温的高温MEMS热式流量传感器及制备方法
CN118516741A (zh) * 2024-04-28 2024-08-20 厦门城市职业学院(厦门开放大学) 一种用于定向凝固的加热工艺
CN119826912B (zh) * 2024-12-31 2025-10-03 西南科技大学 量热式微流量传感器的电极及其制备方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5025415Y2 (https=) * 1971-04-13 1975-07-30
JPH0765179B2 (ja) * 1987-05-15 1995-07-12 日本電信電話株式会社 化学的気相成長方法
JPH0731053Y2 (ja) * 1988-07-25 1995-07-19 牧 厚 ユニット式床暖房装置
JPH06302530A (ja) * 1993-04-12 1994-10-28 Nec Kansai Ltd 半導体装置の製造装置
JPH09190871A (ja) * 1996-01-11 1997-07-22 Canon Inc 加熱装置及びその温度制御方法
JP3536516B2 (ja) * 1996-02-28 2004-06-14 株式会社ニコン フローティング構造の形成方法
US6602345B1 (en) * 1999-06-29 2003-08-05 American Crystal Technologies, Inc., Heater arrangement for crystal growth furnace
JP2003047840A (ja) * 2001-08-06 2003-02-18 Yamatake Corp マイクロリアクタ
KR100449069B1 (ko) * 2001-09-12 2004-09-18 한국전자통신연구원 미소전극, 미소전극 어레이 및 미소전극 제조 방법
JP2003094395A (ja) * 2001-09-26 2003-04-03 Olympus Optical Co Ltd アレイ化マイクロ流体素子
JP3914031B2 (ja) * 2001-11-07 2007-05-16 助川電気工業株式会社 マイクロヒータ
CN1244453C (zh) * 2003-02-20 2006-03-08 祥群科技股份有限公司 热转印元件的结构及制造方法
JP5011628B2 (ja) * 2004-01-20 2012-08-29 日亜化学工業株式会社 半導体発光素子
CN100376683C (zh) * 2005-01-14 2008-03-26 北京大学 聚合酶链式反应芯片微系统
CN100336068C (zh) * 2005-04-21 2007-09-05 中国科学院上海微系统与信息技术研究所 用于驱动聚合酶链式反应微芯片阵列的温度控制方法及装置
JP2007027625A (ja) * 2005-07-21 2007-02-01 Matsushita Electric Works Ltd 有機太陽電池及びその製造方法
JP2007221016A (ja) * 2006-02-20 2007-08-30 Rohm Co Ltd 半導体発光素子の製造方法
JP2007242445A (ja) * 2006-03-09 2007-09-20 Alps Electric Co Ltd マイクロヒータ及びそれを用いたフローセンサ
JP4872450B2 (ja) * 2006-05-12 2012-02-08 日立電線株式会社 窒化物半導体発光素子
CN101086009B (zh) * 2006-06-06 2010-05-12 北京大学 一种带温控矩阵的生物芯片及其加工方法
JP2008010207A (ja) * 2006-06-27 2008-01-17 Optrex Corp 電極基板及びその製造方法
KR20090095314A (ko) * 2008-03-05 2009-09-09 삼성전자주식회사 비정질막의 결정화 방법 및 이를 적용한 박막 태양전지 및박막 태양 전지의 제조 방법
KR20090106750A (ko) * 2008-04-07 2009-10-12 삼성전자주식회사 마이크로 히터 어레이를 이용한 멀티 스택형 태양 전지 및이의 제조 방법
KR20100086735A (ko) * 2009-01-23 2010-08-02 삼성전자주식회사 실리콘 막 형성 방법, ｐｎ 접합 형성 방법 및 이를 이용하여 형성된 ｐｎ 접합
US7952599B2 (en) * 2009-05-29 2011-05-31 Xerox Corporation Heating element incorporating an array of transistor micro-heaters for digital image marking

Also Published As

Publication number Publication date
US8053854B2 (en) 2011-11-08
CN101545136A (zh) 2009-09-30
KR20090102031A (ko) 2009-09-30
US20090243040A1 (en) 2009-10-01
JP2009238732A (ja) 2009-10-15
CN101545136B (zh) 2013-08-07

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