KR20080107968A - 유량 경사 설계를 갖는 균일한 실리콘 막을 증착하는 방법및 장치 - Google Patents
유량 경사 설계를 갖는 균일한 실리콘 막을 증착하는 방법및 장치 Download PDFInfo
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- H01J37/32—Gas-filled discharge tubes
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Abstract
Description
Claims (27)
- 태양 전지 어플리케이션에 적합한 막을 증착하는 장치로서,프로세싱 챔버; 및상기 프로세싱 챔버내에 배치되고 네 측부에 의해 분리된 적어도 네 개의 모서리들을 갖는 사변형의 가스 분배 플레이트를 포함하며, 상기 가스 분배 플레이트는:상기 가스 분배 플레이트를 관통하여 형성되고 상기 모서리에 위치된 다수의 제1 초크들(chokes); 및상기 가스 분배 플레이트를 관통하여 형성되고 상기 모서리 영역들 사이에 있는 상기 가스 분배 플레이트의 측부를 따라 위치된 다수의 제2 초크들 - 상기 다수의 제1 초크들은 상기 다수의 제2 초크들보다 큰 유동 저항(flow resistance)을 가짐 - 을 포함하는,태양 전지 어플리케이션에 적합한 막을 증착하는 장치.
- 제1항에 있어서, 상기 다수의 제2 초크들은 상기 다수의 제1 초크들보다 짧은 길이 또는 작은 직경을 갖는, 태양 전지 어플리케이션에 적합한 막을 증착하는 장치.
- 제2항에 있어서, 상기 가스 분배 플레이트를 관통하여 형성된 상기 초크들 은:상기 플레이트의 상부에 형성된 통로; 및상기 통로와 결합하며 상기 플레이트의 하류면(downstream surface)에 형성된 개구를 갖는 보어(bore) - 상기 통로는 상기 보어의 직경보다 작은 직경을 가짐 - 을 더 포함하는, 태양 전지 어플리케이션에 적합한 막을 증착하는 장치.
- 제1항에 있어서, 상기 가스 분배 플레이트는:오목 상부면을 더 포함하는, 태양 전지 어플리케이션에 적합한 막을 증착하는 장치.
- 제4항에 있어서, 상기 가스 분배 플레이트의 상기 오목 상부면은 약 0.05 인치 내지 약 1 인치 사이의 코드(chord) 깊이를 가지는, 태양 전지 어플리케이션에 적합한 막을 증착하는 장치.
- 제3항에 있어서, 상기 다수의 제2 초크들의 상기 통로는 상기 다수의 제1 초크들의 상기 통로보다 짧은 깊이를 가지는, 태양 전지 어플리케이션에 적합한 막을 증착하는 장치.
- 제2항에 있어서, 상기 가스 분배 플레이트는:오목 하류면(downstream surface)을 더 포함하는, 태양 전지 어플리케이션에 적합한 막을 증착하는 장치.
- 제2항에 있어서, 상기 초크들은 플라즈마 프로세싱 동안 공동 캐소드 경사를 발생시키도록 선택된 구성을 갖고, 상기 초크들의 직경은 약 0.01 인치 내지 약 1 인치 사이인, 태양 전지 어플리케이션에 적합한 막을 증착하는 장치.
- 제1항에 있어서,상기 장치는 상기 챔버 내에 배치된 기판 지지 어셈블리를 더 포함하며, 상기 기판 지지 어셈블리와 상기 가스 분배 플레이트는 이들 사이에 경사 이격(gradient spacing)을 형성하도록 구성되는, 태양 전지 어플리케이션에 적합한 막을 증착하는 장치.
- 제1항에 있어서,상기 장치는 상기 가스 분배 플레이트의 상부 또는 하부면 중 적어도 하나에 대향하여 배치된 어댑터 플레이트를 더 포함하며, 상기 어댑터 플레이트는 상기 가스 분배 플레이트의 모서리에 배치되는, 태양 전지 어플리케이션에 적합한 막을 증착하는 장치.
- 제10항에 있어서, 상기 어댑터 플레이트는:상기 어댑터 플레이트를 관통하여 형성되며 상기 가스 분배 플레이트의 모서 리를 통해 형성된 상기 다수의 제1 초크들과 정렬되는 다수의 통로들을 더 포함하는, 태양 전지 어플리케이션에 적합한 막을 증착하는 장치.
- 제1항에 있어서,상기 가스 분배 플레이트는 상기 다수의 제1 및 제2 초크들의 내부에 위치된 가스 확산기 플레이트를 통해 형성된 다수의 제3 초크들을 더 포함하며, 상기 다수의 제3 초크들은 상기 다수의 제1 초크들보다 작은 유동 저항을 갖는, 태양 전지 어플리케이션에 적합한 막을 증착하는 장치.
- 태양 전지 어플리케이션에 적합한 막을 증착하는 장치로서,프로세싱 챔버; 및상기 프로세싱 챔버내에 배치되고 네 측부에 의해 분리된 적어도 네 개의 모서리들을 갖는 사변형의 가스 분배 플레이트를 포함하며, 상기 가스 분배 플레이트는:상기 가스 분배 플레이트를 관통하여 형성되고 상기 모서리들에 위치된 다수의 제1 초크들(chokes); 및상기 가스 분배 플레이트를 관통하여 형성되고 상기 모서리 영역들 사이에 있는 상기 가스 분배 플레이트의 측부를 따라 위치된 다수의 제2 초크들 - 상기 다수의 제1 초크들은 상기 다수의 제2 초크들보다 큰 길이를 가짐 - 을 포함하는,태양 전지 어플리케이션에 적합한 막을 증착하는 장치.
- 제13항에 있어서, 상기 가스 분배 플레이트는:만곡된 하류면을 더 포함하는, 태양 전지 어플리케이션에 적합한 막을 증착하는 장치.
- 제13항에 있어서,상기 가스 분배 플레이트는 약 0.05 인치 내지 약 1 인치 사이의 코드 깊이를 갖는 오목 상부면을 갖는, 태양 전지 어플리케이션에 적합한 막을 증착하는 장치.
- 제13항에 있어서, 상기 초크들은 약 0.01 인치 내지 약 1 인치 사이의 직경을 갖는, 태양 전지 어플리케이션에 적합한 막을 증착하는 장치.
- 제13항에 있어서,상기 장치는 상기 가스 분배 플레이트의 상부면에 부착된 어댑터 플레이트를 더 포함하는, 태양 전지 어플리케이션에 적합한 막을 증착하는 장치.
- 제13항에 있어서,상기 장치는 상기 가스 분배 플레이트의 각각의 모서리에 부착된 어댑터 플 레이트를 더 포함하고, 상기 다수의 제1 초크들을 통한 유동 저항은 그 하부에 배치된 초크들을 통한 유동 저항을 증가시키는, 태양 전지 어플리케이션에 적합한 막을 증착하는 장치.
- 태양 전지 어플리케이션에 적합한 막을 증착하는 장치로서,프로세싱 챔버; 및상기 프로세싱 챔버내에 배치되고, 적어도 세 개의 서로 다른 유동 저항의 영역을 규정하도록 배치된 다수의 초크들이 내부에 관통 형성되는, 가스 분배 플레이트 - 상기 가스 분배 플레이트의 모서리에 규정된 제1 영역은 상기 가스 분배 플레이트의 가장자리를 따라 규정된 제2 영역의 유동 저항 보다 큰 유동 저항을 가지며, 상기 가스 분배 플레이트의 중심에서 규정된 제3 영역은 상기 제2 영역보다 작은 유동 저항을 갖음 - 를 포함하는,태양 전지 어플리케이션에 적합한 막을 증착하는 장치.
- 제19항에 있어서, 상기 가스 분배 플레이트의 상기 제3 영역에 형성된 초크들은 상기 가스 분배 플레이트의 상기 제2 영역에 형성된 초크들보다 작은 직경을 갖는, 태양 전지 어플리케이션에 적합한 막을 증착하는 장치.
- 제19항에 있어서, 상기 가스 분배 플레이트의 상기 제3 영역에 형성된 초크들은 상기 가스 분배 플레이트의 상기 제2 영역에 형성된 초크들보다 짧은 길이를 갖는, 태양 전지 어플리케이션에 적합한 막을 증착하는 장치.
- 제19항에 있어서, 상기 가스 분배 플레이트는:만곡된 하류면을 더 포함하는, 태양 전지 어플리케이션에 적합한 막을 증착하는 장치.
- 챔버 내에서 태양 전지 어플리케이션에 적합한 실리콘 막을 증착하는 방법으로서,챔버 내에 배치된 기판 지지 어셈블리와 마주하는 가스 분배 플레이트를 구비한 챔버로 기판을 제공하는 단계;상기 가스 분배 플레이트의 모서리를 통해 상기 기판쪽으로 상기 가스 분배 플레이트의 중심을 통해 흐르는 프로세스 가스의 속도보다 느린 속도로 프로세스 가스를 흘리는 단계; 및상기 프로세스 가스로부터 기판상에 미정질 실리콘 층을 증착하는 단계를 포함하는, 태양 전지 어플리케이션에 적합한 실리콘 막을 증착하는 방법.
- 제23항에 있어서,프로세싱 동안 상기 초크들의 적어도 일부내에 플라즈마를 유지하는 단계를 더 포함하는, 태양 전지 어플리케이션에 적합한 실리콘 막을 증착하는 방법.
- 제23항에 있어서, 상기 가스 분배 플레이트의 모서리를 통해 프로세스 가스를 흘리는 단계는:1:20 내지 1:200 사이의 비율로 실란 가스 및 수소 가스를 챔버로 흘리는 단계를 더 포함하는, 태양 전지 어플리케이션에 적합한 실리콘 막을 증착하는 방법.
- 제23항에 있어서, 상기 가스 분배 플레이트의 모서리를 통해 프로세스 가스를 흘리는 단계는:상기 가스 분배 플레이트의 모서리에 위치된 어댑터 플레이트를 관통하여 프로세스 가스를 흘리는 단계를 더 포함하는, 태양 전지 어플리케이션에 적합한 실리콘 막을 증착하는 방법.
- 제23항에 있어서, 상기 가스 분배 플레이트의 모서리를 통해 프로세스 가스를 흘리는 단계는:상기 가스 분배 플레이트의 중심에서의 저항성 흐름보다 상기 가스 분배 플레이트의 모서리에서 보다 큰 저항성 흐름을 제공하는 단계를 더 포함하는, 태양 전지 어플리케이션에 적합한 실리콘 막을 증착하는 방법.
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- 2007-10-26 CN CN2007101653537A patent/CN101319309B/zh active Active
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2008
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2012
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KR20230043816A (ko) * | 2014-08-29 | 2023-03-31 | 램 리써치 코포레이션 | 이온 빔 에칭을 위한 이온 주입기 전극 어셈블리 |
KR102034729B1 (ko) * | 2018-05-04 | 2019-10-21 | (주)뉴젠텍 | 플라즈마 발생 및 유도를 위한 플라즈마 블록 |
US12029133B2 (en) | 2020-02-26 | 2024-07-02 | Lam Research Corporation | Ion beam etching with sidewall cleaning |
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US20080302303A1 (en) | 2008-12-11 |
US20090000551A1 (en) | 2009-01-01 |
US20120103264A1 (en) | 2012-05-03 |
CN101319309B (zh) | 2012-05-02 |
CN101319309A (zh) | 2008-12-10 |
KR100960756B1 (ko) | 2010-06-01 |
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