KR20080039786A - 소스 측이 소거된 부동 게이트 메모리 셀의 반도체 메모리배열을 형성하는 자기 정렬 방법 및 그에 의해 제작된메모리 배열 - Google Patents
소스 측이 소거된 부동 게이트 메모리 셀의 반도체 메모리배열을 형성하는 자기 정렬 방법 및 그에 의해 제작된메모리 배열 Download PDFInfo
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- KR20080039786A KR20080039786A KR1020070100961A KR20070100961A KR20080039786A KR 20080039786 A KR20080039786 A KR 20080039786A KR 1020070100961 A KR1020070100961 A KR 1020070100961A KR 20070100961 A KR20070100961 A KR 20070100961A KR 20080039786 A KR20080039786 A KR 20080039786A
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- Prior art keywords
- region
- insulated
- floating gate
- conductive material
- forming
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- 238000000034 method Methods 0.000 title claims abstract description 80
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
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- 239000004020 conductor Substances 0.000 claims abstract description 58
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- 230000000903 blocking effect Effects 0.000 claims description 34
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- 125000006850 spacer group Chemical group 0.000 claims description 24
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- 230000005689 Fowler Nordheim tunneling Effects 0.000 claims description 7
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- 238000000151 deposition Methods 0.000 description 9
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- 230000008021 deposition Effects 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
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- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/592,104 US8138524B2 (en) | 2006-11-01 | 2006-11-01 | Self-aligned method of forming a semiconductor memory array of floating memory cells with source side erase, and a memory array made thereby |
US11/592,104 | 2006-11-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20080039786A true KR20080039786A (ko) | 2008-05-07 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070100961A KR20080039786A (ko) | 2006-11-01 | 2007-10-08 | 소스 측이 소거된 부동 게이트 메모리 셀의 반도체 메모리배열을 형성하는 자기 정렬 방법 및 그에 의해 제작된메모리 배열 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8138524B2 (zh) |
JP (1) | JP5035775B2 (zh) |
KR (1) | KR20080039786A (zh) |
CN (1) | CN101174652B (zh) |
TW (1) | TWI383473B (zh) |
Families Citing this family (13)
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US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
TWI422017B (zh) * | 2011-04-18 | 2014-01-01 | Powerchip Technology Corp | 非揮發性記憶體元件及其製造方法 |
US8975131B2 (en) * | 2012-09-28 | 2015-03-10 | Silicon Storage Technology, Inc. | Self-aligned method of forming a semiconductor memory array of floating gate memory cells with single poly layer |
KR102131812B1 (ko) | 2013-03-13 | 2020-08-05 | 삼성전자주식회사 | 소스라인 플로팅 회로, 이를 포함하는 메모리 장치 및 메모리 장치의 독출 방법 |
US9922715B2 (en) * | 2014-10-03 | 2018-03-20 | Silicon Storage Technology, Inc. | Non-volatile split gate memory device and a method of operating same |
TWI566381B (zh) * | 2014-12-05 | 2017-01-11 | 力晶科技股份有限公司 | 非揮發性記憶體及其製造方法 |
US9276006B1 (en) * | 2015-01-05 | 2016-03-01 | Silicon Storage Technology, Inc. | Split gate non-volatile flash memory cell having metal-enhanced gates and method of making same |
JP2017045835A (ja) * | 2015-08-26 | 2017-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
US9673208B2 (en) | 2015-10-12 | 2017-06-06 | Silicon Storage Technology, Inc. | Method of forming memory array and logic devices |
CN107305892B (zh) * | 2016-04-20 | 2020-10-02 | 硅存储技术公司 | 使用两个多晶硅沉积步骤来形成三栅极非易失性闪存单元对的方法 |
US10714634B2 (en) | 2017-12-05 | 2020-07-14 | Silicon Storage Technology, Inc. | Non-volatile split gate memory cells with integrated high K metal control gates and method of making same |
CN112185815A (zh) * | 2019-07-04 | 2021-01-05 | 硅存储技术公司 | 形成具有间隔物限定的浮栅和离散地形成的多晶硅栅的分裂栅闪存存储器单元的方法 |
CA3204504A1 (en) | 2021-03-02 | 2022-09-09 | Takuya Sunakawa | Workpiece cutting device and workpiece cutting method |
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-
2006
- 2006-11-01 US US11/592,104 patent/US8138524B2/en active Active
-
2007
- 2007-08-08 TW TW096129196A patent/TWI383473B/zh active
- 2007-10-08 KR KR1020070100961A patent/KR20080039786A/ko not_active Application Discontinuation
- 2007-10-31 CN CN2007101700237A patent/CN101174652B/zh active Active
- 2007-10-31 JP JP2007283108A patent/JP5035775B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2008118136A (ja) | 2008-05-22 |
TWI383473B (zh) | 2013-01-21 |
CN101174652A (zh) | 2008-05-07 |
TW200822296A (en) | 2008-05-16 |
US20080099789A1 (en) | 2008-05-01 |
CN101174652B (zh) | 2012-06-13 |
JP5035775B2 (ja) | 2012-09-26 |
US8138524B2 (en) | 2012-03-20 |
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