KR20070046790A - 광검출 장치 - Google Patents

광검출 장치 Download PDF

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Publication number
KR20070046790A
KR20070046790A KR1020067027155A KR20067027155A KR20070046790A KR 20070046790 A KR20070046790 A KR 20070046790A KR 1020067027155 A KR1020067027155 A KR 1020067027155A KR 20067027155 A KR20067027155 A KR 20067027155A KR 20070046790 A KR20070046790 A KR 20070046790A
Authority
KR
South Korea
Prior art keywords
output
voltage value
capacitor
charge
signal processor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020067027155A
Other languages
English (en)
Korean (ko)
Inventor
유키노부 스기야마
세이이치로 미즈노
Original Assignee
하마마츠 포토닉스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 하마마츠 포토닉스 가부시키가이샤 filed Critical 하마마츠 포토닉스 가부시키가이샤
Publication of KR20070046790A publication Critical patent/KR20070046790A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
KR1020067027155A 2004-08-26 2005-08-15 광검출 장치 Ceased KR20070046790A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004247183A JP4744828B2 (ja) 2004-08-26 2004-08-26 光検出装置
JPJP-P-2004-00247183 2004-08-26

Publications (1)

Publication Number Publication Date
KR20070046790A true KR20070046790A (ko) 2007-05-03

Family

ID=35967378

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067027155A Ceased KR20070046790A (ko) 2004-08-26 2005-08-15 광검출 장치

Country Status (7)

Country Link
US (1) US7679663B2 (enExample)
EP (1) EP1783467A1 (enExample)
JP (1) JP4744828B2 (enExample)
KR (1) KR20070046790A (enExample)
CN (1) CN101023330B (enExample)
TW (1) TW200619604A (enExample)
WO (1) WO2006022163A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200122879A (ko) 2019-04-19 2020-10-28 한화시스템 주식회사 광 검출 장치
KR20200122880A (ko) 2019-04-19 2020-10-28 한화시스템 주식회사 레이저 탐색기

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5076416B2 (ja) * 2006-09-14 2012-11-21 株式会社ニコン 撮像素子および撮像装置
KR100830583B1 (ko) * 2006-11-13 2008-05-22 삼성전자주식회사 듀얼 캡쳐가 가능한 씨모스 이미지 센서의 픽셀 회로 및그것의 구조
JP4719201B2 (ja) * 2007-09-25 2011-07-06 浜松ホトニクス株式会社 固体撮像装置
JP5058057B2 (ja) * 2008-04-24 2012-10-24 浜松ホトニクス株式会社 医療用ｘ線撮像システム
JP6334908B2 (ja) * 2013-12-09 2018-05-30 キヤノン株式会社 撮像装置及びその制御方法、及び撮像素子
JP2016139660A (ja) * 2015-01-26 2016-08-04 株式会社東芝 固体撮像装置
JP7850520B2 (ja) 2020-07-22 2026-04-23 浜松ホトニクス株式会社 光検出装置

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6338256A (ja) * 1986-08-01 1988-02-18 Nikon Corp イメ−ジセンサ
JPS6353968A (ja) * 1986-08-22 1988-03-08 Nikon Corp イメ−ジセンサ
JP3146502B2 (ja) 1990-08-30 2001-03-19 富士電機株式会社 フォトセンサ回路
JPH08256293A (ja) * 1995-03-17 1996-10-01 Fujitsu Ltd 固体撮像素子及び固体撮像ユニット並びに撮像カメラ
US6246436B1 (en) * 1997-11-03 2001-06-12 Agilent Technologies, Inc Adjustable gain active pixel sensor
US6008486A (en) * 1997-12-31 1999-12-28 Gentex Corporation Wide dynamic range optical sensor
JPH11274454A (ja) 1998-03-19 1999-10-08 Canon Inc 固体撮像装置及びその形成方法
US6831691B1 (en) * 1998-04-15 2004-12-14 Minolta Co., Ltd. Solid-state image pickup device
US6078037A (en) * 1998-04-16 2000-06-20 Intel Corporation Active pixel CMOS sensor with multiple storage capacitors
JP2000023041A (ja) * 1998-06-30 2000-01-21 Toshiba Corp 撮像装置
JP2000092395A (ja) * 1998-09-11 2000-03-31 Nec Corp 固体撮像装置およびその駆動方法
JP3592106B2 (ja) * 1998-11-27 2004-11-24 キヤノン株式会社 固体撮像装置およびカメラ
US6697114B1 (en) * 1999-08-13 2004-02-24 Foveon, Inc. Triple slope pixel sensor and arry
US7116366B1 (en) * 1999-08-31 2006-10-03 Micron Technology, Inc. CMOS aps pixel sensor dynamic range increase
US6882367B1 (en) * 2000-02-29 2005-04-19 Foveon, Inc. High-sensitivity storage pixel sensor having auto-exposure detection
JP2001285717A (ja) * 2000-03-29 2001-10-12 Toshiba Corp 固体撮像装置
JP2002072963A (ja) * 2000-06-12 2002-03-12 Semiconductor Energy Lab Co Ltd 発光モジュールおよびその駆動方法並びに光センサ
US6809769B1 (en) * 2000-06-22 2004-10-26 Pixim, Inc. Designs of digital pixel sensors
US7286172B2 (en) * 2000-08-03 2007-10-23 Hamamatsu Photonics K.K. Optical sensor
JP3493405B2 (ja) * 2000-08-31 2004-02-03 ミノルタ株式会社 固体撮像装置
JP4628586B2 (ja) * 2001-05-14 2011-02-09 浜松ホトニクス株式会社 光検出装置
JP3931606B2 (ja) * 2001-09-20 2007-06-20 ソニー株式会社 撮像装置およびノイズ除去方法
US6927796B2 (en) * 2001-09-24 2005-08-09 The Board Of Trustees Of The Leland Stanford Junior University CMOS image sensor system with self-reset digital pixel architecture for improving SNR and dynamic range
JP2005034511A (ja) 2003-07-17 2005-02-10 Inax Corp 衣類乾燥装置
JP4268492B2 (ja) * 2003-10-02 2009-05-27 浜松ホトニクス株式会社 光検出装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200122879A (ko) 2019-04-19 2020-10-28 한화시스템 주식회사 광 검출 장치
KR20200122880A (ko) 2019-04-19 2020-10-28 한화시스템 주식회사 레이저 탐색기

Also Published As

Publication number Publication date
EP1783467A1 (en) 2007-05-09
US20060109361A1 (en) 2006-05-25
JP2006064525A (ja) 2006-03-09
TW200619604A (en) 2006-06-16
TWI372240B (enExample) 2012-09-11
CN101023330B (zh) 2010-09-29
WO2006022163A1 (ja) 2006-03-02
US7679663B2 (en) 2010-03-16
JP4744828B2 (ja) 2011-08-10
CN101023330A (zh) 2007-08-22

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Patent event date: 20061222

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Patent event date: 20100428

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PE0601 Decision on rejection of patent

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