JP4744828B2 - 光検出装置 - Google Patents

光検出装置 Download PDF

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Publication number
JP4744828B2
JP4744828B2 JP2004247183A JP2004247183A JP4744828B2 JP 4744828 B2 JP4744828 B2 JP 4744828B2 JP 2004247183 A JP2004247183 A JP 2004247183A JP 2004247183 A JP2004247183 A JP 2004247183A JP 4744828 B2 JP4744828 B2 JP 4744828B2
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JP
Japan
Prior art keywords
unit
output
voltage value
capacitor
signal processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004247183A
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English (en)
Japanese (ja)
Other versions
JP2006064525A (ja
Inventor
行信 杉山
誠一郎 水野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
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Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2004247183A priority Critical patent/JP4744828B2/ja
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to EP05780280A priority patent/EP1783467A1/en
Priority to CN2005800288022A priority patent/CN101023330B/zh
Priority to KR1020067027155A priority patent/KR20070046790A/ko
Priority to PCT/JP2005/014910 priority patent/WO2006022163A1/ja
Priority to TW094128988A priority patent/TW200619604A/zh
Priority to US11/260,229 priority patent/US7679663B2/en
Publication of JP2006064525A publication Critical patent/JP2006064525A/ja
Application granted granted Critical
Publication of JP4744828B2 publication Critical patent/JP4744828B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP2004247183A 2004-08-26 2004-08-26 光検出装置 Expired - Fee Related JP4744828B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2004247183A JP4744828B2 (ja) 2004-08-26 2004-08-26 光検出装置
CN2005800288022A CN101023330B (zh) 2004-08-26 2005-08-15 光检测装置
KR1020067027155A KR20070046790A (ko) 2004-08-26 2005-08-15 광검출 장치
PCT/JP2005/014910 WO2006022163A1 (ja) 2004-08-26 2005-08-15 光検出装置
EP05780280A EP1783467A1 (en) 2004-08-26 2005-08-15 Photodetector
TW094128988A TW200619604A (en) 2004-08-26 2005-08-24 Photodetection apparatus
US11/260,229 US7679663B2 (en) 2004-08-26 2005-10-28 Photodetection apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004247183A JP4744828B2 (ja) 2004-08-26 2004-08-26 光検出装置

Publications (2)

Publication Number Publication Date
JP2006064525A JP2006064525A (ja) 2006-03-09
JP4744828B2 true JP4744828B2 (ja) 2011-08-10

Family

ID=35967378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004247183A Expired - Fee Related JP4744828B2 (ja) 2004-08-26 2004-08-26 光検出装置

Country Status (7)

Country Link
US (1) US7679663B2 (enExample)
EP (1) EP1783467A1 (enExample)
JP (1) JP4744828B2 (enExample)
KR (1) KR20070046790A (enExample)
CN (1) CN101023330B (enExample)
TW (1) TW200619604A (enExample)
WO (1) WO2006022163A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5076416B2 (ja) * 2006-09-14 2012-11-21 株式会社ニコン 撮像素子および撮像装置
KR100830583B1 (ko) * 2006-11-13 2008-05-22 삼성전자주식회사 듀얼 캡쳐가 가능한 씨모스 이미지 센서의 픽셀 회로 및그것의 구조
JP4719201B2 (ja) * 2007-09-25 2011-07-06 浜松ホトニクス株式会社 固体撮像装置
JP5058057B2 (ja) * 2008-04-24 2012-10-24 浜松ホトニクス株式会社 医療用ｘ線撮像システム
JP6334908B2 (ja) * 2013-12-09 2018-05-30 キヤノン株式会社 撮像装置及びその制御方法、及び撮像素子
JP2016139660A (ja) * 2015-01-26 2016-08-04 株式会社東芝 固体撮像装置
KR102207002B1 (ko) 2019-04-19 2021-01-25 한화시스템 주식회사 광 검출 장치
KR102219713B1 (ko) 2019-04-19 2021-02-24 한화시스템 주식회사 레이저 탐색기
JP7850520B2 (ja) 2020-07-22 2026-04-23 浜松ホトニクス株式会社 光検出装置

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6338256A (ja) * 1986-08-01 1988-02-18 Nikon Corp イメ−ジセンサ
JPS6353968A (ja) * 1986-08-22 1988-03-08 Nikon Corp イメ−ジセンサ
JP3146502B2 (ja) 1990-08-30 2001-03-19 富士電機株式会社 フォトセンサ回路
JPH08256293A (ja) * 1995-03-17 1996-10-01 Fujitsu Ltd 固体撮像素子及び固体撮像ユニット並びに撮像カメラ
US6246436B1 (en) * 1997-11-03 2001-06-12 Agilent Technologies, Inc Adjustable gain active pixel sensor
US6008486A (en) * 1997-12-31 1999-12-28 Gentex Corporation Wide dynamic range optical sensor
JPH11274454A (ja) 1998-03-19 1999-10-08 Canon Inc 固体撮像装置及びその形成方法
US6831691B1 (en) * 1998-04-15 2004-12-14 Minolta Co., Ltd. Solid-state image pickup device
US6078037A (en) * 1998-04-16 2000-06-20 Intel Corporation Active pixel CMOS sensor with multiple storage capacitors
JP2000023041A (ja) * 1998-06-30 2000-01-21 Toshiba Corp 撮像装置
JP2000092395A (ja) * 1998-09-11 2000-03-31 Nec Corp 固体撮像装置およびその駆動方法
JP3592106B2 (ja) * 1998-11-27 2004-11-24 キヤノン株式会社 固体撮像装置およびカメラ
US6697114B1 (en) * 1999-08-13 2004-02-24 Foveon, Inc. Triple slope pixel sensor and arry
US7116366B1 (en) * 1999-08-31 2006-10-03 Micron Technology, Inc. CMOS aps pixel sensor dynamic range increase
US6882367B1 (en) * 2000-02-29 2005-04-19 Foveon, Inc. High-sensitivity storage pixel sensor having auto-exposure detection
JP2001285717A (ja) * 2000-03-29 2001-10-12 Toshiba Corp 固体撮像装置
JP2002072963A (ja) * 2000-06-12 2002-03-12 Semiconductor Energy Lab Co Ltd 発光モジュールおよびその駆動方法並びに光センサ
US6809769B1 (en) * 2000-06-22 2004-10-26 Pixim, Inc. Designs of digital pixel sensors
US7286172B2 (en) * 2000-08-03 2007-10-23 Hamamatsu Photonics K.K. Optical sensor
JP3493405B2 (ja) * 2000-08-31 2004-02-03 ミノルタ株式会社 固体撮像装置
JP4628586B2 (ja) * 2001-05-14 2011-02-09 浜松ホトニクス株式会社 光検出装置
JP3931606B2 (ja) * 2001-09-20 2007-06-20 ソニー株式会社 撮像装置およびノイズ除去方法
US6927796B2 (en) * 2001-09-24 2005-08-09 The Board Of Trustees Of The Leland Stanford Junior University CMOS image sensor system with self-reset digital pixel architecture for improving SNR and dynamic range
JP2005034511A (ja) 2003-07-17 2005-02-10 Inax Corp 衣類乾燥装置
JP4268492B2 (ja) * 2003-10-02 2009-05-27 浜松ホトニクス株式会社 光検出装置

Also Published As

Publication number Publication date
EP1783467A1 (en) 2007-05-09
US20060109361A1 (en) 2006-05-25
JP2006064525A (ja) 2006-03-09
TW200619604A (en) 2006-06-16
TWI372240B (enExample) 2012-09-11
CN101023330B (zh) 2010-09-29
WO2006022163A1 (ja) 2006-03-02
KR20070046790A (ko) 2007-05-03
US7679663B2 (en) 2010-03-16
CN101023330A (zh) 2007-08-22

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