KR20060033935A - 아이티오 스퍼터링 타겟트용 산화 주석 분말 및 아이티오막형성용 소결체 스퍼터링 타겟트 - Google Patents
아이티오 스퍼터링 타겟트용 산화 주석 분말 및 아이티오막형성용 소결체 스퍼터링 타겟트 Download PDFInfo
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- KR20060033935A KR20060033935A KR1020067006931A KR20067006931A KR20060033935A KR 20060033935 A KR20060033935 A KR 20060033935A KR 1020067006931 A KR1020067006931 A KR 1020067006931A KR 20067006931 A KR20067006931 A KR 20067006931A KR 20060033935 A KR20060033935 A KR 20060033935A
- Authority
- KR
- South Korea
- Prior art keywords
- tin oxide
- particle size
- ito
- oxide powder
- target
- Prior art date
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G19/00—Compounds of tin
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G19/00—Compounds of tin
- C01G19/02—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
- C01P2002/52—Solid solutions containing elements as dopants
- C01P2002/54—Solid solutions containing elements as dopants one element only
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
Claims (5)
- 입도 분포에서 구한 메디안 경이 0.40∼1.0㎛의 범위이며, 또한 입도 분포에서 구한 90% 입경이 3.0㎛ 이하의 범위에 있으며, 지르코늄의 혼입량이 100ppm 미만, 잔부(殘部)가 산화주석으로 이루어진 ITO 스퍼터링 타겟트 용 산화주석 분말.
- 입도 분포에서 구한 메디안 경이 0.40∼0.60㎛의 범위이며, 또한 입도 분포에서 구한 90% 입경이 1.0㎛ 이하의 범위에 있으며, 지르코늄의 혼입량이 100ppm 미만, 잔부(殘部)가 산화주석으로 이루어진 ITO 스퍼터링 타겟트 용 산화주석 분말.
- 입도 분포에서 구한 메디안 경이 0.40∼1.0㎛의 범위이며, 또한 입도 분포에서 구한 90% 입경이 3.0㎛ 이하의 범위에 있으며, 지르코늄의 혼입량이 100ppm 미만, 잔부(殘部)가 산화주석으로 이루어진 산화주석 분말과 산화인디움 분말의 소결체로 부터 구성된 ITO막 형성용 소결체 스퍼터링 타겟트.
- 입도 분포에서 구한 메디안 경이 0.40∼0.60㎛의 범위이며, 또한 입도 분포에서 구한 90% 입경이 1.0㎛ 이하의 범위에 있으며, 지르코늄의 혼입량이 100ppm 미만, 잔부(殘部)가 산화주석으로 이루어진 산화주석 분말과 산화인디움 분말의 소결체로 부터 구성된 ITO막 형성용 소결체 스퍼터링 타겟트.
- 제3항 또는 제4항에 있어서, 7.12g/cm3 이상의 밀도를 구비하고 있는 것을 특징으로 하는 ITO막 형성용 스퍼터링 타겟트.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2001068554 | 2001-03-12 | ||
JPJP-P-2001-00068554 | 2001-03-12 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020037011559A Division KR100581138B1 (ko) | 2001-03-12 | 2002-02-15 | 아이티오 스퍼터링 타겟트용 산화 주석 분말의 제조방법 및 아이티오막 형성용 소결체 스퍼터링 타겟트의 제조방법 |
Publications (2)
Publication Number | Publication Date |
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KR20060033935A true KR20060033935A (ko) | 2006-04-20 |
KR100663617B1 KR100663617B1 (ko) | 2007-01-05 |
Family
ID=18926727
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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KR1020037011559A KR100581138B1 (ko) | 2001-03-12 | 2002-02-15 | 아이티오 스퍼터링 타겟트용 산화 주석 분말의 제조방법 및 아이티오막 형성용 소결체 스퍼터링 타겟트의 제조방법 |
KR1020067006931A KR100663617B1 (ko) | 2001-03-12 | 2002-02-15 | 아이티오 스퍼터링 타겟트용 산화 주석 분말 및 아이티오막형성용 소결체 스퍼터링 타겟트 |
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KR1020037011559A KR100581138B1 (ko) | 2001-03-12 | 2002-02-15 | 아이티오 스퍼터링 타겟트용 산화 주석 분말의 제조방법 및 아이티오막 형성용 소결체 스퍼터링 타겟트의 제조방법 |
Country Status (5)
Country | Link |
---|---|
JP (2) | JP4190888B2 (ko) |
KR (2) | KR100581138B1 (ko) |
CN (1) | CN100537828C (ko) |
TW (1) | TW555875B (ko) |
WO (1) | WO2002072912A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170109047A (ko) * | 2015-02-03 | 2017-09-27 | 트럼프 휴팅거 에스피 제트 오. 오. | 아크 처리 장치 및 그 방법 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005019492A1 (ja) | 2003-08-20 | 2005-03-03 | Nikko Materials Co., Ltd. | Itoスパッタリングターゲット |
KR101302680B1 (ko) * | 2006-12-19 | 2013-09-03 | 삼성코닝정밀소재 주식회사 | 산화인듐주석 타겟 및 그 제조 방법 |
KR101590429B1 (ko) * | 2008-07-15 | 2016-02-01 | 토소가부시키가이샤 | 복합 산화물 소결체, 복합 산화물 소결체의 제조방법, 스퍼터링 타겟 및 박막의 제조방법 |
JP5149262B2 (ja) * | 2009-11-05 | 2013-02-20 | 出光興産株式会社 | 酸化インジウム−酸化亜鉛系焼結体ターゲット及びその製造法 |
JP4884561B1 (ja) * | 2011-04-19 | 2012-02-29 | Jx日鉱日石金属株式会社 | インジウムターゲット及びその製造方法 |
JP5890671B2 (ja) * | 2011-12-06 | 2016-03-22 | Jx金属株式会社 | Itoスパッタリングターゲットの製造方法 |
US9885108B2 (en) | 2012-08-07 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming sputtering target |
JP6291593B2 (ja) | 2014-11-07 | 2018-03-14 | Jx金属株式会社 | Itoスパッタリングターゲット及びその製造方法並びにito透明導電膜の製造方法 |
JP5887625B1 (ja) * | 2015-03-27 | 2016-03-16 | Jx金属株式会社 | 円筒型スパッタリングターゲット、円筒型焼結体、円筒型成形体及びそれらの製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US6033620A (en) * | 1995-04-18 | 2000-03-07 | Tosoh Corporation | Process of preparing high-density sintered ITO compact and sputtering target |
JP3870446B2 (ja) * | 1996-07-16 | 2007-01-17 | 東ソー株式会社 | Ito焼結体の製造方法およびスパッタリングターゲット |
JPH10147861A (ja) * | 1996-11-15 | 1998-06-02 | Sumitomo Metal Mining Co Ltd | 酸化インジウム・酸化錫焼結体の製造方法 |
JP4081840B2 (ja) * | 1997-02-28 | 2008-04-30 | 東ソー株式会社 | スパッタリングターゲットの製造方法 |
JPH11228218A (ja) * | 1998-02-04 | 1999-08-24 | Mitsui Mining & Smelting Co Ltd | Ito焼結体の製造方法 |
JP3676961B2 (ja) * | 1999-04-02 | 2005-07-27 | 株式会社日鉱マテリアルズ | Ito膜形成用酸化錫−酸化インジウム粉末及びito膜形成用スパッタリングターゲット |
JP2001072468A (ja) * | 1999-08-31 | 2001-03-21 | Sumitomo Metal Mining Co Ltd | Ito焼結体の製造方法 |
JP2001072470A (ja) * | 1999-08-31 | 2001-03-21 | Sumitomo Metal Mining Co Ltd | Ito焼結体の製造方法 |
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2002
- 2002-02-15 JP JP2002571957A patent/JP4190888B2/ja not_active Expired - Lifetime
- 2002-02-15 CN CNB028032764A patent/CN100537828C/zh not_active Expired - Lifetime
- 2002-02-15 WO PCT/JP2002/001305 patent/WO2002072912A1/ja not_active Application Discontinuation
- 2002-02-15 KR KR1020037011559A patent/KR100581138B1/ko active IP Right Grant
- 2002-02-15 KR KR1020067006931A patent/KR100663617B1/ko active IP Right Grant
- 2002-03-04 TW TW091103899A patent/TW555875B/zh not_active IP Right Cessation
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2008
- 2008-09-19 JP JP2008240752A patent/JP5456291B2/ja not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170109047A (ko) * | 2015-02-03 | 2017-09-27 | 트럼프 휴팅거 에스피 제트 오. 오. | 아크 처리 장치 및 그 방법 |
Also Published As
Publication number | Publication date |
---|---|
JP5456291B2 (ja) | 2014-03-26 |
TW555875B (en) | 2003-10-01 |
JP2009029706A (ja) | 2009-02-12 |
KR100581138B1 (ko) | 2006-05-16 |
CN1633516A (zh) | 2005-06-29 |
JPWO2002072912A1 (ja) | 2004-07-02 |
KR100663617B1 (ko) | 2007-01-05 |
JP4190888B2 (ja) | 2008-12-03 |
CN100537828C (zh) | 2009-09-09 |
KR20030087185A (ko) | 2003-11-13 |
WO2002072912A1 (fr) | 2002-09-19 |
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