CN1633516A - Ito溅射靶用氧化锡粉末、该粉末的制造方法、用于形成ito膜的烧结体溅射靶及该靶的制造方法 - Google Patents
Ito溅射靶用氧化锡粉末、该粉末的制造方法、用于形成ito膜的烧结体溅射靶及该靶的制造方法 Download PDFInfo
- Publication number
- CN1633516A CN1633516A CNA028032764A CN02803276A CN1633516A CN 1633516 A CN1633516 A CN 1633516A CN A028032764 A CNA028032764 A CN A028032764A CN 02803276 A CN02803276 A CN 02803276A CN 1633516 A CN1633516 A CN 1633516A
- Authority
- CN
- China
- Prior art keywords
- ito
- powder
- sputtering target
- oxide powder
- size
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G19/00—Compounds of tin
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G19/00—Compounds of tin
- C01G19/02—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
- C01P2002/52—Solid solutions containing elements as dopants
- C01P2002/54—Solid solutions containing elements as dopants one element only
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001068554 | 2001-03-12 | ||
JP68554/01 | 2001-03-12 | ||
JP68554/2001 | 2001-03-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1633516A true CN1633516A (zh) | 2005-06-29 |
CN100537828C CN100537828C (zh) | 2009-09-09 |
Family
ID=18926727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028032764A Expired - Lifetime CN100537828C (zh) | 2001-03-12 | 2002-02-15 | Ito溅射靶用氧化锡粉末、该粉末的制造方法、用于形成ito膜的烧结体溅射靶及该靶的制造方法 |
Country Status (5)
Country | Link |
---|---|
JP (2) | JP4190888B2 (zh) |
KR (2) | KR100663617B1 (zh) |
CN (1) | CN100537828C (zh) |
TW (1) | TW555875B (zh) |
WO (1) | WO2002072912A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102089257A (zh) * | 2008-07-15 | 2011-06-08 | 东曹株式会社 | 复合氧化物烧结体、复合氧化物烧结体的制造方法、溅射靶及薄膜的制造方法 |
CN104357801A (zh) * | 2011-04-19 | 2015-02-18 | Jx日矿日石金属株式会社 | 铟靶及其制造方法 |
CN114481050A (zh) * | 2015-03-27 | 2022-05-13 | Jx金属株式会社 | 圆筒型的溅射靶、烧结体、成形体及其制造方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100489150C (zh) * | 2003-08-20 | 2009-05-20 | 日矿金属株式会社 | Ito溅射靶 |
KR101302680B1 (ko) * | 2006-12-19 | 2013-09-03 | 삼성코닝정밀소재 주식회사 | 산화인듐주석 타겟 및 그 제조 방법 |
JP5149262B2 (ja) * | 2009-11-05 | 2013-02-20 | 出光興産株式会社 | 酸化インジウム−酸化亜鉛系焼結体ターゲット及びその製造法 |
JP5890671B2 (ja) * | 2011-12-06 | 2016-03-22 | Jx金属株式会社 | Itoスパッタリングターゲットの製造方法 |
US9885108B2 (en) | 2012-08-07 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming sputtering target |
KR102030892B1 (ko) | 2014-11-07 | 2019-10-10 | 제이엑스금속주식회사 | Ito 스퍼터링 타겟 및 그 제조 방법 그리고 ito 투명 도전막 및 ito 투명 도전막의 제조 방법 |
EP3054472A1 (en) * | 2015-02-03 | 2016-08-10 | TRUMPF Huettinger Sp. Z o. o. | Arc treatment device and method therefor |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6033620A (en) * | 1995-04-18 | 2000-03-07 | Tosoh Corporation | Process of preparing high-density sintered ITO compact and sputtering target |
JP3870446B2 (ja) * | 1996-07-16 | 2007-01-17 | 東ソー株式会社 | Ito焼結体の製造方法およびスパッタリングターゲット |
JPH10147861A (ja) * | 1996-11-15 | 1998-06-02 | Sumitomo Metal Mining Co Ltd | 酸化インジウム・酸化錫焼結体の製造方法 |
JP4081840B2 (ja) * | 1997-02-28 | 2008-04-30 | 東ソー株式会社 | スパッタリングターゲットの製造方法 |
JPH11228218A (ja) * | 1998-02-04 | 1999-08-24 | Mitsui Mining & Smelting Co Ltd | Ito焼結体の製造方法 |
JP3676961B2 (ja) * | 1999-04-02 | 2005-07-27 | 株式会社日鉱マテリアルズ | Ito膜形成用酸化錫−酸化インジウム粉末及びito膜形成用スパッタリングターゲット |
JP2001072468A (ja) * | 1999-08-31 | 2001-03-21 | Sumitomo Metal Mining Co Ltd | Ito焼結体の製造方法 |
JP2001072470A (ja) * | 1999-08-31 | 2001-03-21 | Sumitomo Metal Mining Co Ltd | Ito焼結体の製造方法 |
-
2002
- 2002-02-15 KR KR1020067006931A patent/KR100663617B1/ko active IP Right Grant
- 2002-02-15 JP JP2002571957A patent/JP4190888B2/ja not_active Expired - Lifetime
- 2002-02-15 KR KR1020037011559A patent/KR100581138B1/ko active IP Right Grant
- 2002-02-15 CN CNB028032764A patent/CN100537828C/zh not_active Expired - Lifetime
- 2002-02-15 WO PCT/JP2002/001305 patent/WO2002072912A1/ja not_active Application Discontinuation
- 2002-03-04 TW TW091103899A patent/TW555875B/zh not_active IP Right Cessation
-
2008
- 2008-09-19 JP JP2008240752A patent/JP5456291B2/ja not_active Expired - Lifetime
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102089257A (zh) * | 2008-07-15 | 2011-06-08 | 东曹株式会社 | 复合氧化物烧结体、复合氧化物烧结体的制造方法、溅射靶及薄膜的制造方法 |
US8569192B2 (en) | 2008-07-15 | 2013-10-29 | Tosoh Corporation | Sintered complex oxide, method for producing sintered complex oxide, sputtering target and method for producing thin film |
CN102089257B (zh) * | 2008-07-15 | 2016-03-30 | 东曹株式会社 | 复合氧化物烧结体、复合氧化物烧结体的制造方法、溅射靶及薄膜的制造方法 |
CN104357801A (zh) * | 2011-04-19 | 2015-02-18 | Jx日矿日石金属株式会社 | 铟靶及其制造方法 |
CN114481050A (zh) * | 2015-03-27 | 2022-05-13 | Jx金属株式会社 | 圆筒型的溅射靶、烧结体、成形体及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100663617B1 (ko) | 2007-01-05 |
CN100537828C (zh) | 2009-09-09 |
KR20060033935A (ko) | 2006-04-20 |
JP5456291B2 (ja) | 2014-03-26 |
KR20030087185A (ko) | 2003-11-13 |
JP2009029706A (ja) | 2009-02-12 |
JP4190888B2 (ja) | 2008-12-03 |
TW555875B (en) | 2003-10-01 |
WO2002072912A1 (fr) | 2002-09-19 |
KR100581138B1 (ko) | 2006-05-16 |
JPWO2002072912A1 (ja) | 2004-07-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5733208B2 (ja) | イオンプレーティング用タブレットとその製造方法、および透明導電膜 | |
US8801973B2 (en) | Oxide sintered body and production method therefor, target, and transparent conductive film and transparent conductive substrate obtained by using the same | |
JP5456291B2 (ja) | Ito膜形成用焼結体スパッタリングターゲットの製造方法 | |
KR102030892B1 (ko) | Ito 스퍼터링 타겟 및 그 제조 방법 그리고 ito 투명 도전막 및 ito 투명 도전막의 제조 방법 | |
JP6078189B1 (ja) | Izo焼結体スパッタリングターゲット及びその製造方法 | |
CN105008306B (zh) | 氧化锌系烧结体及其制造方法和溅射靶以及透明导电膜 | |
JP2011093729A (ja) | Ito焼結体の製造方法及びitoスパッタリングターゲットの製造方法 | |
JP4196805B2 (ja) | 酸化インジウム系ターゲットおよびその製造方法 | |
JP6885038B2 (ja) | 酸化物焼結体、その製造方法及びスパッタリングターゲット | |
JP2006206349A (ja) | Ito造粒粉末及びito焼結体並びにその製造方法 | |
JP5907086B2 (ja) | 酸化インジウム系の酸化物焼結体およびその製造方法 | |
WO2016024526A1 (ja) | 酸化物焼結体及びスパッタリングターゲット | |
JP2013256425A (ja) | Itoスパッタリングターゲット用酸化スズ粉末、itoスパッタリングターゲット用酸化スズおよび酸化インジウムの混合粉末の製造方法、および、itoスパッタリングターゲット用焼結体 | |
JPH10147862A (ja) | 酸化インジウム・酸化錫焼結体 | |
CN113831120A (zh) | 一种ato靶材前驱体及其制备方法与应用 | |
JPH10147861A (ja) | 酸化インジウム・酸化錫焼結体の製造方法 | |
JP2003239063A (ja) | 透明導電性薄膜とその製造方法及びその製造に用いるスパッタリングターゲット | |
JP4234483B2 (ja) | Itoスパッタリングターゲット及びその製造方法並びにito透明導電膜 | |
WO2011061916A1 (ja) | Ito焼結体の製造方法及びitoスパッタリングターゲットの製造方法 | |
JP2001072470A (ja) | Ito焼結体の製造方法 | |
JP2000178725A (ja) | 酸化亜鉛系焼結体ターゲット | |
WO2014203579A1 (ja) | In-Ce-O系スパッタリングターゲットとその製造方法 | |
JP2007230853A (ja) | Ito粉末及びその製造方法並びにitoスパッタリングターゲットの製造方法 | |
CN117401969A (zh) | 一种具有高度组织均匀性ito靶材的制造方法 | |
WO2013042747A1 (ja) | 酸化物焼結体およびその製造方法並びに酸化物透明導電膜 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: JX NIPPON MINING + METALS CORPORATION Free format text: FORMER NAME: NIPPON MINING + METALS CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: JX Nippon Mining & Metals Corporation Address before: Tokyo, Japan Patentee before: Nippon Mining & Metals Co., Ltd. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: JX NIPPON MINING & METALS CORPORATION Address before: Tokyo, Japan Patentee before: JX Nippon Mining & Metals Corporation |
|
CP01 | Change in the name or title of a patent holder | ||
CX01 | Expiry of patent term |
Granted publication date: 20090909 |
|
CX01 | Expiry of patent term |