KR20050047088A - 청자색 레이저 감광성 레지스트재층을 갖는 화상 형성재및 그 레지스트 화상 형성 방법 - Google Patents

청자색 레이저 감광성 레지스트재층을 갖는 화상 형성재및 그 레지스트 화상 형성 방법 Download PDF

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Publication number
KR20050047088A
KR20050047088A KR1020057001979A KR20057001979A KR20050047088A KR 20050047088 A KR20050047088 A KR 20050047088A KR 1020057001979 A KR1020057001979 A KR 1020057001979A KR 20057001979 A KR20057001979 A KR 20057001979A KR 20050047088 A KR20050047088 A KR 20050047088A
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KR
South Korea
Prior art keywords
group
material layer
resist material
photosensitive
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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KR1020057001979A
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English (en)
Korean (ko)
Inventor
도시유키 우라노
야스히로 가메야마
리에코 후지타
다카시 미야자와
에리코 도시미츠
Original Assignee
미쓰비시 가가꾸 가부시키가이샤
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Publication of KR20050047088A publication Critical patent/KR20050047088A/ko
Ceased legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031Organic compounds not covered by group G03F7/029
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020057001979A 2002-08-07 2003-08-05 청자색 레이저 감광성 레지스트재층을 갖는 화상 형성재및 그 레지스트 화상 형성 방법 Ceased KR20050047088A (ko)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00229416 2002-08-07
JP2002229416 2002-08-07
JP2002365470 2002-12-17
JPJP-P-2002-00365470 2002-12-17
JP2003017559 2003-01-27
JPJP-P-2003-00017559 2003-01-27
JP2003034161 2003-02-12
JPJP-P-2003-00034161 2003-02-12
JPJP-P-2003-00044649 2003-02-21
JP2003044649 2003-02-21

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020087000433A Division KR101003323B1 (ko) 2002-08-07 2003-08-05 청자색 레이저 감광성 레지스트재층을 갖는 화상 형성재 및그 레지스트 화상 형성 방법

Publications (1)

Publication Number Publication Date
KR20050047088A true KR20050047088A (ko) 2005-05-19

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KR1020057001979A Ceased KR20050047088A (ko) 2002-08-07 2003-08-05 청자색 레이저 감광성 레지스트재층을 갖는 화상 형성재및 그 레지스트 화상 형성 방법
KR1020087000433A Expired - Lifetime KR101003323B1 (ko) 2002-08-07 2003-08-05 청자색 레이저 감광성 레지스트재층을 갖는 화상 형성재 및그 레지스트 화상 형성 방법

Family Applications After (1)

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KR1020087000433A Expired - Lifetime KR101003323B1 (ko) 2002-08-07 2003-08-05 청자색 레이저 감광성 레지스트재층을 갖는 화상 형성재 및그 레지스트 화상 형성 방법

Country Status (5)

Country Link
KR (2) KR20050047088A (https=)
CN (2) CN100573321C (https=)
AU (1) AU2003254812A1 (https=)
TW (2) TW200416487A (https=)
WO (1) WO2004015497A1 (https=)

Cited By (1)

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KR20190039472A (ko) * 2016-08-08 2019-04-12 닛산 가가쿠 가부시키가이샤 광경화성 조성물 및 반도체장치의 제조방법

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KR100970357B1 (ko) * 2003-09-25 2010-07-16 니뽄 고오세이가가꾸 고오교오 가부시끼가이샤 네가티브형 청자색 레이저 감광성 조성물, 화상 형성 재료,화상 형성재, 및 화상 형성 방법
CN1950750B (zh) * 2004-05-12 2012-10-24 旭化成电子材料株式会社 图案形成材料、图案形成设备和图案形成方法
JP2006154740A (ja) * 2004-07-14 2006-06-15 Fuji Photo Film Co Ltd 感光性組成物、パターン形成材料、感光性積層体、並びにパターン形成装置及びパターン形成方法
KR20130042049A (ko) 2004-07-14 2013-04-25 아사히 가세이 이-매터리얼즈 가부시키가이샤 감광성 조성물, 패턴형성재료, 감광성 적층체, 및 패턴형성장치 및 패턴형성방법
TW200622491A (en) * 2004-09-28 2006-07-01 Fuji Photo Film Co Ltd Pattern-forming material, pattern-forming device and pattern-forming method
TWI485064B (zh) * 2006-03-10 2015-05-21 羅門哈斯電子材料有限公司 用於光微影之組成物及製程
KR101313538B1 (ko) * 2006-04-06 2013-10-01 주식회사 동진쎄미켐 네가티브 감광성 수지 조성물
JP4975579B2 (ja) * 2007-10-01 2012-07-11 太陽ホールディングス株式会社 組成物、ドライフィルム、硬化物及びプリント配線板
TWI491982B (zh) * 2009-10-28 2015-07-11 Sumitomo Chemical Co Coloring the photosensitive resin composition
JP5296828B2 (ja) * 2011-04-15 2013-09-25 旭化成イーマテリアルズ株式会社 パターン形成材料、並びにパターン形成装置及びパターン形成方法
KR102006993B1 (ko) * 2011-05-31 2019-08-02 덴카 주식회사 에너지선 경화성 수지 조성물
EP2682440A1 (en) * 2012-07-06 2014-01-08 Basf Se A chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and a carbonate salt
CN103298265B (zh) * 2013-04-09 2016-04-06 王俊生 一种电路板外层线路成型方法
KR102145934B1 (ko) * 2014-05-20 2020-08-19 동우 화인켐 주식회사 광경화 패턴의 형성 방법
CN105418674A (zh) * 2015-11-10 2016-03-23 中国乐凯集团有限公司 一种高折射率树脂及其应用
US10520813B2 (en) * 2016-12-15 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd Extreme ultraviolet photoresist with high-efficiency electron transfer
TWI816671B (zh) * 2017-04-25 2023-10-01 德商馬克專利公司 用於產生底切圖樣輪廓之負型光阻調配物以及使光阻組合物成像之方法和用於使基板上之圖樣化光阻劑金屬化之剝離方法
CN115917432A (zh) * 2020-07-01 2023-04-04 东京应化工业株式会社 感光性组合物、感光性干膜、带镀覆用铸模的基板的制造方法及镀覆造形物的制造方法
US20220067489A1 (en) 2020-08-28 2022-03-03 Illumina, Inc. Detecting and Filtering Clusters Based on Artificial Intelligence-Predicted Base Calls
AU2022248999A1 (en) 2021-03-31 2023-02-02 Illumina, Inc. Artificial intelligence-based base caller with contextual awareness
CN117631439B (zh) * 2022-08-31 2025-10-31 长春人造树脂厂股份有限公司 光阻膜及其应用

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EP0985683A1 (en) * 1998-09-09 2000-03-15 Fuji Photo Film Co., Ltd. Photosensitive composition and method for manufacturing lithographic printing plate
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DE06121351T1 (de) * 2000-04-19 2009-01-29 Agfa Graphics N.V. Lichtempfindliche lithografische Druckplatte und Verfahren zur Herstellung einer Druckplatte
JP2002072460A (ja) * 2000-09-05 2002-03-12 Mitsui Chemicals Inc ポジ型可視光感光性樹脂組成物及びその用途
JP2002148801A (ja) * 2000-11-14 2002-05-22 Mitsui Chemicals Inc ポジ型可視光感光性樹脂組成物及びその用途
JP2002169275A (ja) * 2000-12-04 2002-06-14 Mitsui Chemicals Inc 光酸発生剤及びそれを用いた可視光感光性樹脂組成物
JP2002202598A (ja) * 2000-12-28 2002-07-19 Fuji Photo Film Co Ltd 感光性組成物およびそれを用いた光重合方法
JP4152597B2 (ja) * 2001-02-16 2008-09-17 三菱製紙株式会社 感光性組成物
JP2003167329A (ja) * 2001-09-20 2003-06-13 Mitsubishi Chemicals Corp 平版印刷版の作製方法
JP2003195526A (ja) * 2001-12-27 2003-07-09 Mitsubishi Chemicals Corp 感光性平版印刷版の刷版方法

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KR20190039472A (ko) * 2016-08-08 2019-04-12 닛산 가가쿠 가부시키가이샤 광경화성 조성물 및 반도체장치의 제조방법
US11681223B2 (en) 2016-08-08 2023-06-20 Nissan Chemical Corporation Photocurable composition and method for producing semiconductor device
US12147158B2 (en) 2016-08-08 2024-11-19 Nissan Chemical Corporation Photocurable composition and method for producing semiconductor device

Also Published As

Publication number Publication date
CN100573321C (zh) 2009-12-23
TW200839443A (en) 2008-10-01
KR20080011351A (ko) 2008-02-01
AU2003254812A1 (en) 2004-02-25
CN101135850B (zh) 2011-02-16
TW200416487A (en) 2004-09-01
WO2004015497A1 (ja) 2004-02-19
CN1675588A (zh) 2005-09-28
TWI326006B (https=) 2010-06-11
KR101003323B1 (ko) 2010-12-22
CN101135850A (zh) 2008-03-05

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