KR20050006216A - 서브마운트 및 반도체 장치 - Google Patents
서브마운트 및 반도체 장치 Download PDFInfo
- Publication number
- KR20050006216A KR20050006216A KR10-2004-7017495A KR20047017495A KR20050006216A KR 20050006216 A KR20050006216 A KR 20050006216A KR 20047017495 A KR20047017495 A KR 20047017495A KR 20050006216 A KR20050006216 A KR 20050006216A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- solder
- submount
- film
- substrate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 229910000679 solder Inorganic materials 0.000 claims abstract description 115
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 230000007704 transition Effects 0.000 claims abstract description 18
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 55
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 48
- 239000010936 titanium Substances 0.000 claims description 35
- 239000010931 gold Substances 0.000 claims description 27
- 230000004888 barrier function Effects 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 5
- 239000010955 niobium Substances 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 239000002075 main ingredient Substances 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 139
- 239000010408 film Substances 0.000 description 72
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000001465 metallisation Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- -1 titanium (Ti) Chemical class 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910020658 PbSn Inorganic materials 0.000 description 1
- 101150071746 Pbsn gene Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
- Semiconductor Lasers (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (10)
- 서브 마운트 기판과, 상기 서브 마운트 기판의 주표면 위에 형성된 땜납층을 구비한 서브 마운트에 있어서, 상기 서브 마운트 기판과 상기 땜납층 사이에, 상기 서브 마운트 기판측으로부터 천이 원소의 적어도 1종을 주성분으로 하는 천이 원소층과 귀금속의 적어도 1종을 주성분으로 하는 귀금속층이 적층된 땜납 밀착층을 구비하고, 상기 땜납 밀착층의 상기 땜납층측의 면이 상기 땜납층에 면 접촉하도록 형성된 서브 마운트.
- 제1항에 있어서,상기 천이 원소층 및 상기 귀금속층의 막 두께가, 0 초과 1㎛ 이하인 서브 마운트.
- 제1항 또는 제2항에 있어서,상기 천이 원소층은, 티탄, 바나듐, 크롬, 지르코늄, 니오븀 및 그 합금으로 이루어진 군으로부터 선택된 적어도 1종을 주성분으로 하고, 상기 귀금속층은, 금, 백금, 팔라듐 및 그 합금으로 이루어진 군으로부터 선택된 적어도 1종을 주성분으로 하는 서브 마운트.
- 제1항 내지 제3항 중 어느 한 항에 있어서,상기 땜납층은, 은 주석계 땜납을 주성분으로 하는 서브 마운트.
- 제4항에 있어서,상기 땜납층의 용융 전의 형태가, 은을 주성분으로 하는 층과 주석을 주성분으로 하는 층의 적층으로 이루어진 서브 마운트.
- 제1항 내지 제5항 중 어느 한 항에 있어서,상기 서브 마운트 기판과 상기 땜납 밀착층 사이에 형성된 전극층을 더 구비한 서브 마운트.
- 제6항에 있어서,상기 서브 마운트 기판과 상기 땜납 밀착층 사이에서, 상기 서브 마운트 기판의 주표면에 접촉하도록 형성된 밀착층과, 상기 밀착층 위에 형성된 확산 방지층을 더 구비하고, 상기 전극층은 상기 확산 방지층 위에 배치되어 있는 서브 마운트.
- 제7항에 있어서,상기 밀착층은 티탄을 포함하고, 상기 확산 방지층은 백금을 포함하고, 상기 전극층은 금을 포함하는 서브 마운트.
- 제1항 내지 제8항 중 어느 한 항에 있어서,상기 서브 마운트 기판은 질화 알루미늄 소결체를 포함하는 서브 마운트.
- 제1항 내지 제9항 중 어느 한 항의 서브 마운트를 이용한 반도체 장치로서, 상기 땜납층 위에 탑재된 반도체 발광 소자를 구비한 반도체 장치.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2002-00127948 | 2002-04-30 | ||
JP2002127948A JP3509809B2 (ja) | 2002-04-30 | 2002-04-30 | サブマウントおよび半導体装置 |
PCT/JP2003/005303 WO2003094220A1 (fr) | 2002-04-30 | 2003-04-24 | Embase et dispositif a semi-conducteur |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050006216A true KR20050006216A (ko) | 2005-01-15 |
KR100940164B1 KR100940164B1 (ko) | 2010-02-03 |
Family
ID=19194273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020047017495A KR100940164B1 (ko) | 2002-04-30 | 2003-04-24 | 서브마운트 및 반도체 장치 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7015583B2 (ko) |
EP (1) | EP1564803A4 (ko) |
JP (1) | JP3509809B2 (ko) |
KR (1) | KR100940164B1 (ko) |
CN (1) | CN100394567C (ko) |
WO (1) | WO2003094220A1 (ko) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2547358C (en) * | 2001-05-24 | 2013-08-06 | Fry's Metals, Inc. | Thermal interface material and solder preforms |
WO2003007312A2 (en) | 2001-05-24 | 2003-01-23 | Fry's Metals , Inc. | Thermal interface material and heat sink configuration |
JP3882712B2 (ja) * | 2002-08-09 | 2007-02-21 | 住友電気工業株式会社 | サブマウントおよび半導体装置 |
US7247514B2 (en) * | 2003-04-11 | 2007-07-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for producing the same |
JP2004356429A (ja) * | 2003-05-29 | 2004-12-16 | Sumitomo Electric Ind Ltd | サブマウントおよびそれを用いた半導体装置 |
DE602004029915D1 (de) | 2003-08-26 | 2010-12-16 | Tokuyama Corp | Substrat zur bauelement-bondierung, bauelement-bondiertes substrat und herstellungsverfahren dafür |
JP4528510B2 (ja) * | 2003-09-22 | 2010-08-18 | 株式会社東芝 | 半導体レーザ素子用サブマウント |
KR100781859B1 (ko) * | 2003-09-22 | 2007-12-03 | 가부시끼가이샤 도시바 | 반도체 레이저 소자의 제조 방법 |
JP2005159045A (ja) * | 2003-11-26 | 2005-06-16 | Sumitomo Electric Ind Ltd | 半導体発光素子搭載部材とそれを用いた発光ダイオード |
DE10355600B4 (de) * | 2003-11-28 | 2021-06-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchip und Verfahren zur Herstellung von Halbleiterchips |
JP4644007B2 (ja) * | 2004-03-24 | 2011-03-02 | 株式会社トクヤマ | 素子接合用基板およびその製造方法 |
US7626264B2 (en) | 2004-03-24 | 2009-12-01 | Tokuyama Corporation | Substrate for device bonding and method for manufacturing same |
JP4825403B2 (ja) * | 2004-04-01 | 2011-11-30 | 株式会社日立製作所 | サブマウントおよびその製造方法 |
JP4228303B2 (ja) | 2004-04-12 | 2009-02-25 | 住友電気工業株式会社 | 半導体発光素子搭載部材と、それを用いた半導体発光装置 |
US9166130B2 (en) | 2012-10-24 | 2015-10-20 | Spectrasensors, Inc. | Solderless mounting for semiconductor lasers |
JP2006100369A (ja) * | 2004-09-28 | 2006-04-13 | Sharp Corp | 半導体レーザ素子およびその製造方法 |
NL1027961C2 (nl) * | 2005-01-05 | 2006-07-06 | Lemnis Lighting Ip Gmbh | Elektrische schakeling, gebruik van een halfgeleidercomponent en werkwijze voor het vervaardigen van een halfgeleidercomponent. |
US7795732B2 (en) | 2005-02-07 | 2010-09-14 | Kabushiki Kaisha Toshiba | Ceramic wiring board and process for producing the same, and semiconductor device using the same |
TWI514522B (zh) | 2005-03-18 | 2015-12-21 | Dowa Electronics Materials Co | 副載置片及其製造方法 |
JP4699812B2 (ja) * | 2005-06-07 | 2011-06-15 | 株式会社デンソー | 半導体装置およびその製造方法 |
US7348212B2 (en) * | 2005-09-13 | 2008-03-25 | Philips Lumileds Lighting Company Llc | Interconnects for semiconductor light emitting devices |
JP4822155B2 (ja) | 2005-09-26 | 2011-11-24 | Dowaエレクトロニクス株式会社 | サブマウント及びその製造方法 |
JP2007201420A (ja) | 2005-12-27 | 2007-08-09 | Sharp Corp | 半導体発光装置、半導体発光素子、および半導体発光装置の製造方法 |
US8030575B2 (en) * | 2005-12-29 | 2011-10-04 | Sensor Electronic Technology, Inc. | Mounting structure providing electrical surge protection |
KR100765075B1 (ko) * | 2006-03-26 | 2007-10-09 | 엘지이노텍 주식회사 | 질화물 반도체 발광 소자 및 그 제조방법 |
EP2044477B1 (en) * | 2006-07-14 | 2016-09-07 | Koninklijke Philips N.V. | Mounting an electro-optical component in alignment with an optical element |
JP5122098B2 (ja) * | 2006-08-11 | 2013-01-16 | 株式会社トクヤマ | メタライズ基板、半導体装置 |
US7964888B2 (en) * | 2007-04-18 | 2011-06-21 | Cree, Inc. | Semiconductor light emitting device packages and methods |
US7816155B2 (en) * | 2007-07-06 | 2010-10-19 | Jds Uniphase Corporation | Mounted semiconductor device and a method for making the same |
JP2009064961A (ja) * | 2007-09-06 | 2009-03-26 | Sharp Corp | 半導体レーザ装置およびその製造方法 |
DE102008044641A1 (de) * | 2008-04-28 | 2009-10-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
CN101465516B (zh) * | 2009-01-09 | 2010-12-01 | 西安炬光科技有限公司 | 一种大功率半导体激光器及其制备方法 |
TW201110275A (en) * | 2009-05-13 | 2011-03-16 | Seiko Instr Inc | Electronic component, manufacturing method for electronic component, and electronic device |
JP5725029B2 (ja) * | 2010-09-17 | 2015-05-27 | 旭硝子株式会社 | 発光素子搭載用基板および発光装置 |
US9368934B2 (en) * | 2011-02-14 | 2016-06-14 | Spectrasensors, Inc. | Semiconductor laser mounting for improved frequency stability |
US9166364B2 (en) | 2011-02-14 | 2015-10-20 | Spectrasensors, Inc. | Semiconductor laser mounting with intact diffusion barrier layer |
JP4778120B1 (ja) * | 2011-03-08 | 2011-09-21 | 有限会社ナプラ | 電子機器 |
AU2015202533B2 (en) * | 2011-03-16 | 2016-09-01 | Spectrasensors, Inc. | Semiconductor laser mounting for improved frequency stability |
US9735126B2 (en) * | 2011-06-07 | 2017-08-15 | Infineon Technologies Ag | Solder alloys and arrangements |
EP2816593B1 (en) * | 2012-02-14 | 2020-01-15 | Mitsubishi Materials Corporation | Solder joint structure, power module, heat-sink-attached substrate for power module, method for producing said substrate, and paste for forming solder underlayer |
JP5962522B2 (ja) | 2012-03-22 | 2016-08-03 | 日亜化学工業株式会社 | 半導体レーザ装置 |
WO2014106925A1 (ja) * | 2013-01-07 | 2014-07-10 | 株式会社アライドマテリアル | セラミック配線基板、半導体装置、およびセラミック配線基板の製造方法 |
US9070387B1 (en) | 2013-08-23 | 2015-06-30 | Western Digital Technologies, Inc. | Integrated heat-assisted magnetic recording head/laser assembly |
WO2017138666A1 (ja) * | 2016-02-12 | 2017-08-17 | 古河電気工業株式会社 | サブマウント、半導体素子実装サブマウント、および半導体素子モジュール |
JP6864688B2 (ja) * | 2016-07-22 | 2021-04-28 | ソニーセミコンダクタソリューションズ株式会社 | 素子構造体および発光装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5715446A (en) * | 1980-07-02 | 1982-01-26 | Hitachi Ltd | Semiconductor device |
JPS59167038A (ja) * | 1983-03-14 | 1984-09-20 | Hitachi Ltd | 光半導体素子用サブマウントの構造 |
JPH063815B2 (ja) * | 1983-09-30 | 1994-01-12 | 株式会社日立製作所 | 光半導体素子用サブマウント |
JPH01109790A (ja) * | 1987-10-22 | 1989-04-26 | Mitsubishi Electric Corp | 光半導体素子用サブマウント |
JP2830221B2 (ja) * | 1989-11-30 | 1998-12-02 | 神鋼電機株式会社 | ハイブリッド集積回路のマウント構造 |
JP3190718B2 (ja) * | 1992-01-14 | 2001-07-23 | 株式会社東芝 | 半導体レーザ用サブマウント |
US5234153A (en) * | 1992-08-28 | 1993-08-10 | At&T Bell Laboratories | Permanent metallic bonding method |
JP3377553B2 (ja) * | 1993-05-13 | 2003-02-17 | 三菱電機株式会社 | 半導体レーザ装置 |
JP3165779B2 (ja) * | 1995-07-18 | 2001-05-14 | 株式会社トクヤマ | サブマウント |
JP3346971B2 (ja) * | 1995-12-20 | 2002-11-18 | 株式会社東芝 | 光半導体素子用サブマウントおよびそのマウント方法 |
JP3500304B2 (ja) | 1998-04-23 | 2004-02-23 | 京セラ株式会社 | 半導体素子支持部材及びこれを用いた半導体素子収納用パッケージ |
US6590913B1 (en) * | 1999-05-14 | 2003-07-08 | Triquint Technology Holding Co. | Barrier layer and method of making the same |
JP3632499B2 (ja) * | 1999-05-19 | 2005-03-23 | ユケン工業株式会社 | 錫−銀系合金電気めっき浴 |
JP2001298199A (ja) * | 2000-04-17 | 2001-10-26 | Hitachi Ltd | 光半導体装置の接続構造 |
JP3800977B2 (ja) * | 2001-04-11 | 2006-07-26 | 株式会社日立製作所 | Zn−Al系はんだを用いた製品 |
US6700913B2 (en) * | 2001-05-29 | 2004-03-02 | Northrop Grumman Corporation | Low cost high integrity diode laser array |
JP3982284B2 (ja) * | 2002-03-06 | 2007-09-26 | 住友電気工業株式会社 | サブマウントおよび半導体装置 |
-
2002
- 2002-04-30 JP JP2002127948A patent/JP3509809B2/ja not_active Expired - Fee Related
-
2003
- 2003-04-24 US US10/512,828 patent/US7015583B2/en not_active Expired - Lifetime
- 2003-04-24 KR KR1020047017495A patent/KR100940164B1/ko active IP Right Grant
- 2003-04-24 WO PCT/JP2003/005303 patent/WO2003094220A1/ja active Application Filing
- 2003-04-24 EP EP03725664A patent/EP1564803A4/en not_active Withdrawn
- 2003-04-24 CN CNB038097109A patent/CN100394567C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20050167679A1 (en) | 2005-08-04 |
EP1564803A4 (en) | 2008-09-03 |
CN1650411A (zh) | 2005-08-03 |
EP1564803A1 (en) | 2005-08-17 |
KR100940164B1 (ko) | 2010-02-03 |
CN100394567C (zh) | 2008-06-11 |
JP3509809B2 (ja) | 2004-03-22 |
US7015583B2 (en) | 2006-03-21 |
WO2003094220A1 (fr) | 2003-11-13 |
JP2002368020A (ja) | 2002-12-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100940164B1 (ko) | 서브마운트 및 반도체 장치 | |
KR20050061452A (ko) | 서브 마운트 및 반도체 장치 | |
KR101045507B1 (ko) | 발광 소자 탑재용 부재 및 그것을 사용한 반도체 장치 | |
KR100957669B1 (ko) | 서브 마운트 및 반도체 장치 | |
JP5417505B2 (ja) | 半導体装置 | |
KR100825354B1 (ko) | 소자 접합용 기판, 소자 접합 기판 및 그 제조 방법 | |
JP3912130B2 (ja) | サブマウント | |
KR20040014475A (ko) | 소자 접합용 기판 및 그 제조 방법 | |
JP3779218B2 (ja) | サブマウントおよび半導体装置 | |
JP4537877B2 (ja) | セラミックス配線基板とそれを用いた半導体装置 | |
JP2004356429A (ja) | サブマウントおよびそれを用いた半導体装置 | |
JP2006216766A (ja) | セラミックス配線基板とそれを用いた半導体装置 | |
JPH0786444A (ja) | 半導体用複合放熱基板の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130111 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20140107 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20150105 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20160105 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20170103 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20180119 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20190117 Year of fee payment: 10 |