JPS5715446A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5715446A
JPS5715446A JP8914480A JP8914480A JPS5715446A JP S5715446 A JPS5715446 A JP S5715446A JP 8914480 A JP8914480 A JP 8914480A JP 8914480 A JP8914480 A JP 8914480A JP S5715446 A JPS5715446 A JP S5715446A
Authority
JP
Japan
Prior art keywords
layer
silicon carbide
group
metals
ceramics
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8914480A
Other languages
Japanese (ja)
Other versions
JPS6250982B2 (en
Inventor
Yasutoshi Kurihara
Ryosaku Kanzawa
Komei Yatsuno
Kosuke Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8914480A priority Critical patent/JPS5715446A/en
Publication of JPS5715446A publication Critical patent/JPS5715446A/en
Publication of JPS6250982B2 publication Critical patent/JPS6250982B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal

Abstract

PURPOSE:To make a monolithic construction ideal for a substrate carrying elements or a container housing them by laminating three separate layers made of metal selected from specified groops of metals on the surface of a silicon carbide in said order. CONSTITUTION:In a monilitic construction of ceramics used for a carrier substrate or a container, a sintered body in which a small amount (for example, about ...%) of beryllium oxide or boron oxide is added to silicon carbide is used for the ceramics. Metals to be laminated are separately selected from a group of Ti, Cr, Mo, W, and Al for the first layer, a group of Cu, Ni, Pd and Pt for the second layer, and a group of Au, Ag and Pt for the third layer. They are applied in said order, for example, by evaporation, sputtering or the like. For example, said silicon carbide plate 1 is provided with said metal layers 2-5, on which a chip 7 is bonded through a solder layer 6. With such an arrangement, an element or a device is obtained excellent in the electrical insulation and heat radiation along with a large adhesivity.
JP8914480A 1980-07-02 1980-07-02 Semiconductor device Granted JPS5715446A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8914480A JPS5715446A (en) 1980-07-02 1980-07-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8914480A JPS5715446A (en) 1980-07-02 1980-07-02 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5715446A true JPS5715446A (en) 1982-01-26
JPS6250982B2 JPS6250982B2 (en) 1987-10-28

Family

ID=13962665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8914480A Granted JPS5715446A (en) 1980-07-02 1980-07-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5715446A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074539A (en) * 1983-09-30 1985-04-26 Hitachi Ltd Submount for optical semiconductor element
JPS6181659A (en) * 1984-09-28 1986-04-25 Nec Corp Substrate with pin
JPS6196754A (en) * 1984-10-17 1986-05-15 Nec Corp Substrate provided with pin
JPS61119051A (en) * 1984-11-15 1986-06-06 Nec Corp Semiconductor device
JPS6229147A (en) * 1985-07-30 1987-02-07 Kyocera Corp Electronic parts having conductive layer of gold
JPS62183543A (en) * 1986-02-07 1987-08-11 Hitachi Ltd Semiconductor device package
KR100400628B1 (en) * 2000-10-05 2003-10-04 산요덴키가부시키가이샤 Heat-dissipating substrate and semiconductor module
CN100394567C (en) * 2002-04-30 2008-06-11 住友电气工业株式会社 Submount and semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074539A (en) * 1983-09-30 1985-04-26 Hitachi Ltd Submount for optical semiconductor element
JPS6181659A (en) * 1984-09-28 1986-04-25 Nec Corp Substrate with pin
JPS6196754A (en) * 1984-10-17 1986-05-15 Nec Corp Substrate provided with pin
JPS61119051A (en) * 1984-11-15 1986-06-06 Nec Corp Semiconductor device
JPS6229147A (en) * 1985-07-30 1987-02-07 Kyocera Corp Electronic parts having conductive layer of gold
JPS62183543A (en) * 1986-02-07 1987-08-11 Hitachi Ltd Semiconductor device package
KR100400628B1 (en) * 2000-10-05 2003-10-04 산요덴키가부시키가이샤 Heat-dissipating substrate and semiconductor module
CN100394567C (en) * 2002-04-30 2008-06-11 住友电气工业株式会社 Submount and semiconductor device

Also Published As

Publication number Publication date
JPS6250982B2 (en) 1987-10-28

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