JP3457898B2 - Optical semiconductor element storage package - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention accommodates an optical semiconductor device.
Related to optical semiconductor element storage package
It is. [0002] 2. Description of the Related Art Conventionally, light for accommodating an optical semiconductor device has been used.
The package for semiconductor device storage is generally iron-nickel-
From metallic materials such as cobalt alloy and copper-tungsten alloy
In the center of the upper surface, an optical semiconductor element
A base having a mounting portion to be mounted therebetween, and the optical semiconductor
A silver wax or the like is placed on the substrate so as to surround the element mounting part.
It has a through hole and a notch on the side
Frame made of metal material such as iron-nickel-cobalt alloy
Body and the through hole of the frame or the frame around the through hole.
Iron-uni which has a space inside which optical signals are transmitted
Tubular fixing made of metallic material such as nickel-cobalt alloy
The melting point of the member and the cylindrical fixing member is 200 to 400 ° C.
Fixed through low melting point brazing material such as gold-tin alloy
Translucent member made of amorphous glass or the like that blocks the inside of the member
And inserted into the notch of the frame, and made of aluminum oxide
Each electrode of the optical semiconductor device is bonded to the insulator made of sintered body.
Metallized wiring that is electrically connected via
A ceramic terminal body on which a wire layer is formed;
Lid member attached to the top surface to hermetically seal the optical semiconductor element
And an optical semiconductor element mounting portion of the base.
And an electronic cooling element such as a Peltier element
Each electrode of the optical semiconductor device is fixed while being sandwiched between them.
The ceramic terminal body through the bonding wire
Electrically connected to the rise wiring layer, and then,
A lid member is joined to the upper surface, and is composed of a base, a frame, and a lid member.
The optical semiconductor element is housed in a container
Optical fiber member to the shape fixing member, for example, YAG welding
Optical semiconductor device as a product
Be placed. [0003] Such an optical semiconductor device uses an electronic cooling element.
External electric circuit to optical semiconductor element while cooling optical semiconductor element
Causes optical excitation by the drive signal supplied from the
Excited light is transmitted / received to / from optical fiber member through translucent member
And the inside of the optical fiber of the optical fiber member
It is used for high-speed communication by transmitting it. [0004] [0005] However, this
In conventional optical semiconductor element storage packages, the base and
Iron-nickel-cobalt alloy and copper forming the frame
-For metal materials such as tungsten alloys and ceramic terminals
Heat transfer of aluminum oxide sintered body forming insulator
Since the conductivity is 15 W / mk
The external power supply is cooled while cooling the
Field excited by the drive signal supplied from the air circuit
In this case, the optical cooling element such as the Peltier element
The upper surface side where it is placed is in contact with the substrate although the temperature is low
The lower side is high temperature (about 100 ° C), so it is electronically cooled
The heat generated by the element is applied to the base, frame, ceramic terminal,
Acts greatly on optical semiconductor devices via binding wires
Then, the heat of the electronic cooling element causes
It is said that the cooling efficiency by the cooling element is greatly reduced
Had disadvantages. Conventionally, optical semiconductor elements are activated
Occasionally generated heat and the optical semiconductor element through the base, frame, etc.
To absorb both the transmitted heat of the thermoelectric cooler,
It was necessary to increase the output of the child cooling element. The present invention has been made in view of the above-mentioned drawbacks.
The purpose is that the heat of the electronic cooling device acts on the optical semiconductor device.
And a low-power thermoelectric cooler
Also keep the optical semiconductor device at the appropriate temperature
Light that can be operated normally and stably over
An object of the present invention is to provide a package for housing a semiconductor element. [0006] SUMMARY OF THE INVENTION The present invention relates to a frame-shaped substrate.
And the optical semiconductor element is inserted into the hole of
Radiator plate having a mounting portion to be mounted via a child cooling element
So as to surround the optical semiconductor element mounting portion on the base.
Frame body having a through hole and a cutout on the side
Attached to the frame around the through-hole or the through-hole,
A cylindrical fixing member to which the optical fiber member is joined;
Each electrode of the optical semiconductor element is inserted into the notch and the insulator is
In which a metallized wiring layer to be
A lamic terminal body, attached to the upper surface of the frame body,
Semiconductor device comprising a lid member for hermetically sealing a body element
A storage package, wherein the heat sink is arranged in a thickness direction.
From unidirectional composites with rows of carbon fibers bonded by carbon
Chrome-iron alloy layer, copper layer, iron-uni on both upper and lower surfaces of the core
Of nickel alloy layer or iron-nickel-cobalt alloy layer
A metal layer having a three-layer structure is formed by diffusion bonding
Chromium-iron alloy layer, copper layer, iron-
Nickel alloy layer or iron-nickel-cobalt alloy layer
Characterized in that the thickness of each is substantially the same
It is. In the package for storing an optical semiconductor element according to the present invention,
According to the report, the opto-semiconductor element is placed with the electronic cooling element in between.
From the top to the bottom of the radiator
Having a thermal conductivity of 300 W / mk or more,
That is, the carbon fibers arranged in the thickness direction are bonded with carbon.
Chrome-iron alloy on both upper and lower surfaces of core made of directional composite material
Layer, copper layer, iron-nickel alloy layer or iron-nickel
Diffusion bonding of a metal layer having a three-layer structure of a cobalt alloy layer
The optical semiconductor element was replaced by Peltier element
Supplied from an external electric circuit while cooling with an electronic cooling element such as a child
When optically excited by the drive signal
The heat generated by the element is transferred selectively from the upper side to the lower side of the radiator.
A frame-shaped substrate, frame that is reached and released into the atmosphere
Body, ceramic terminal body and bonding wire
It does not act on the optical semiconductor device and, as a result,
The cooling efficiency of the body element by the electronic cooling element is high.
The temperature of the optical semiconductor device is always appropriate even with a low-power thermoelectric cooler.
And stable optical semiconductor elements for a long period of time
It can be activated. [0008] BRIEF DESCRIPTION OF THE DRAWINGS FIG.
This will be described in detail. 1 to 4 show an optical semiconductor device according to the present invention.
1 shows an embodiment of a storage package, 1 is a frame-shaped base,
14 is a radiator, 2 is a frame, and 3 is a lid member. This substrate
1, a heat radiating plate 14, a frame 2, and a lid member 3 inside an optical semiconductor
A container for housing the element 4 is configured. The frame-shaped substrate 1 is made of iron-nickel-cobalt.
Alloys and metal materials such as iron-nickel alloys.
A hole into which the heat sink 14 is inserted is formed at the center. The frame-shaped base 1 is made of, for example, iron-nickel.
Rolling method to ingots (lumps) such as rucobalt alloy
In order to apply a conventionally known metal processing method such as a punching method
Therefore, it is formed in a predetermined shape. The base 1 is formed at the center thereof.
A radiator plate 14 is inserted in the hole, and the radiator plate 14
Acts as a support member for supporting the semiconductor element 4,
For mounting the optical semiconductor element 4 at a substantially central portion of the upper surface thereof.
An optical semiconductor element having a mounting portion 14a;
4 has a tin-cooling element 5 such as a Peltier element, etc.
It is adhesively fixed via low-temperature solder such as bismuth. The heat radiating plate 14 has a thickness as shown in FIG.
Unidirectional composites of carbon fibers aligned in the
Chrome-iron alloy on both upper and lower surfaces of core 14b made of composite material
Layer 15a, copper layer 15b, iron-nickel alloy layer or iron
-Ni-Co alloy layer 15c has a three-layer structure
Consisting of a metal layer 15 deposited by diffusion bonding,
The thermal conductivity of the core 14b made of a unidirectional composite material is
The direction of the carbon fiber, that is, from the upper surface side to the lower surface side of the radiator 14
Thermal conductivity in the direction to 300 W / mk
Thermal conductivity in the direction perpendicular to the elementary fiber is 30 W / mk
The heat is applied from the upper surface side to the lower surface side of the heat sink 14.
Are selectively and efficiently transmitted in one direction.
You. Therefore, the core body 14b made of the unidirectional composite material
The semiconductor element 4 is placed on the upper surface of the heat sink 14 using Peltier.
When the device is mounted and fixed with the electronic cooling element 5 such as
In this case, the heat generated by the electronic cooling element 5 is
From the heat sink 14 to the lower surface.
From the air efficiently. The heat sink 14 is made of a unidirectional composite material.
The core 14b is made of, for example, carbon fibers arranged in one direction.
The bundle is separated into fine powder such as solid pitch or coke.
In a solution of thermosetting resin such as phenol resin
Impregnated and then dried to distribute carbon fibers in one direction
Forming multiple sheets in a row and forming each sheet
Stack multiple sheets so that the carbon fiber directions are the same.
Layer, and then apply a predetermined pressure to the laminated sheets.
And heat to cure the thermosetting resin.
Finally, this is fired at a high temperature in an inert atmosphere,
Carbon powder and pitch or coke fine powder
(Forming carbon) and each carbon fiber
It is made by combining fibers. The heat sink 14 may be a unidirectional composite material.
The core 14b is made of a chromium-iron alloy layer 1
5a, copper layer 15b and iron-nickel alloy layer or iron-ni
Gold consisting of three layers, i.e., the nickel-cobalt alloy layer 15c
A metal layer 15 is applied, and the chromium-iron
Alloy layer 15a, copper layer 15b, iron-nickel alloy layer or
Is the thickness of each of the iron-nickel-cobalt alloy layers 15c.
Only the thickness is substantially the same. The metal layer 15 is made of chromium-iron having substantially the same thickness.
Alloy layer 15a, copper layer 15b, iron-nickel alloy layer or
Is composed of three layers of iron-nickel-cobalt alloy layer 15c
The thermal expansion of the heat sink 14 made of the unidirectional composite material is performed.
The tension coefficient is about 10 × 10^-6/ ℃ ～ 13 × 10^-6/ ℃ (room temperature
To 800 ° C.) and a frame-shaped substrate 1 and an iron-nick
Frame 2 made of keru cobalt alloy or iron-nickel alloy
And the heat radiation plate 14 is made flat.
Core 14b made of a unidirectional composite material
The heat radiating plate 14 having the metal layers 15 adhered to the upper and lower surfaces of the
Between the body 14b and the upper surface metal layer 15 and between the core 14b and the lower surface
Due to the difference in thermal expansion coefficient between the metal layer 15 and the metal layer 15
A thermal stress is generated, and each thermal stress is generated by the core of the metal layer 15.
Offset by different positions of attachment to body 14b
As a result, the radiator plate 14 includes the core 14 b and the metal layer 15.
Is not deformed by thermal stress generated between
And the light semi-conductive on the upper surface of the heat sink 14
The body element 4 is firmly attached and fixed with the electronic cooling element 5 in between.
And the electronic cooling element 5 emits.
Heat is efficiently dissipated into the atmosphere via the radiator plate 14.
It becomes possible. The metal layer 15 is made of a unidirectional composite material.
Diffusion bonding to the upper and lower surfaces of the core 14b made of
Therefore, it is applied, specifically, a unidirectional composite material
A core having a thickness of 50 μm or less
Romu iron alloy foil, copper foil and iron-nickel alloy or
The iron-nickel-cobalt alloy foil is placed on the
While applying a pressure of 5MPa with a vacuum hot press
It is performed by applying a temperature of 1200 ° C. for one hour.
You. The chromium-iron alloy layer 1 of the metal layer 15
5a is a metal layer 15 formed by a core 14 made of a unidirectional composite material.
b), and the copper layer 15b is
Romu iron alloy layer 15a and iron-nickel alloy layer or iron
-Nickel-cobalt alloy layer 15c is firmly joined
And effectively prevent mutual diffusion between the two.
And an iron-nickel alloy layer or iron-nickel-co
Baltic alloy layer 15c is composed of chromium-iron alloy layer 15a and copper layer
15b, the coefficient of thermal expansion of the heat sink 14 is about 10 × 1
0^-6/ ℃ ～ 13 × 10^-6/ ° C (room temperature to 800 ° C)
Works. A core 14b made of the unidirectional composite material
The radiator plate 14 made of
For optical semiconductor device storage package using heat sink 14
When an optical semiconductor device is formed by housing the optical semiconductor element 4,
The weight of the optical semiconductor device has also become extremely light.
It can be mounted on electronic devices that are becoming smaller and lighter.
You. Further, the base 1 on which the radiator plate 14 is inserted is
On the upper surface, a mounting portion 14a on which the optical semiconductor element 4 is mounted is provided.
The frame 2 is joined so as to surround the frame 2.
A space for accommodating the optical semiconductor element 4 is formed inside the
Have been. The frame 2 is made of an iron-nickel-cobalt alloy
And metal materials such as iron-nickel alloys.
-Nickel-cobalt alloy and other ingots
It is formed by forming into a frame shape by
To attach to the base 1, the upper surface of the base 1 and the lower surface of
This is done by brazing through a material. The iron-nickel-cobalt alloy or iron-ni
The frame 2 made of a metal material such as a nickel alloy is
Number is about 10 × 10^-6/ ℃ ～ 13 × 10^-6/ ° C (room temperature to 8
00 ° C.) and the coefficient of thermal expansion of the substrate 1 (about 10 × 10^-6
/ ℃ ～ 13 × 10^-6/ ° C: room temperature to 800 ° C)
Therefore, after attaching the frame 2 to the base 1, heat is applied to both.
Even if applied, a large thermal stress occurs between them
The frame 2 is very firmly attached on the base 1
Can be stored. The frame 2 also has a through hole 2a on its side.
A cylindrical fixing member is provided on the inner wall surface of the through hole 2a.
9 is attached, and at one end inside the cylindrical fixing member 9
Has, for example, a translucent member 10 attached thereto. A through hole formed in the side of the frame 2
2a is an attachment hole for attaching the fixing member 9 to the frame 2.
Works on the side of the frame 2 by drilling
Is formed into a predetermined shape. The frame 2 is attached to the through hole 2a.
The fixing member 9 fixes the optical fiber member 11 to the frame 2.
Function as a base fixing member in case of
4 transmits the excited light to the optical fiber member 11.
And a light-transmitting member 1
0 is attached, and an optical fiber member 1
1 is attached and connected. The cylindrical fixing member 9 is made of iron-nickel-co.
Made of metal material such as Baltic alloy or iron-nickel alloy,
For example, pressing an ingot of iron-nickel alloy
It is formed by forming into a cylindrical shape by processing. Further, the fixing member 9 is provided at one inner end thereof.
For example, the translucent member 10 is attached, and the translucent portion is
The material 10 closes the internal space of the fixing member 9, and the base 1 and the frame 2
And the container composed of the lid member 3 and hermetically sealed
The optical semiconductor element 4 which transmits the internal space of the fixing member 9
The excited light is directly attached to and connected to the fixing member 9.
It functions to transmit the light to the fiber member 11. The light transmitting member 10 is made of, for example, silicon oxide,
Lead based with lead oxide, boric acid and silica sand as main components
It is made of borosilicate amorphous glass,
Since the amorphous glass has no crystal axis,
The light excited by the element 4 is passed through the translucent member 10 and
When transmitting and receiving to and from the fiber member 11,
The excited light does not cause birefringence in the translucent member 10.
The optical fiber member 11 is transferred as it is.
As a result, the optical fiber of the light excited by the optical semiconductor
The transmission to and from the bar member 11 becomes highly efficient, and the transmission efficiency of the optical signal is improved.
The rate can be high. Attachment of the translucent member 10 to the fixing member 9
Is, for example, as shown in FIG.
A metallization layer 12 in advance,
Between the solder layer 12 and the fixing member 9 via a brazing material such as a gold-tin alloy.
This is done by brazing. In this case, translucency
The attachment of the member 10 to the fixing member 9 is performed using a gold-tin alloy or the like.
High reliability of attachment because it is performed by mounting
As a result, the fixing member 9 and the translucent member 10
Hermetic sealing of the container accommodating the optical semiconductor element 4 at the attachment portion
Stopping is completed, and the optical semiconductor element 4 accommodated in the container is removed.
Can operate normally and stably for a long time
You. Note that the outer peripheral portion of the light transmitting member 10 is
The metallized layer 12 that is applied forms the translucent member 10.
The melting point of the formed amorphous glass is as low as about 700 ° C.
Forming by adopting the known Mo-Mn method
As shown in FIG.
Titanium, titanium-ta, which is active and strongly bonded
Of at least one of tungsten and tantalum nitride
The first layer 12a and the first layer 12a secure the translucent member 10.
The third layer, which will be described later, is generated by heat when brazing to the fixing member 9.
12c, and diffuses into the translucent member 10 of the metallized layer 12.
Platinum, d that effectively prevents the joint strength from lowering
Nickel, at least one of nickel-chromium
Wetting of the brazing material on the two layers 12b and the metallized layer 12
The brazing material is firmly joined to the metallized layer 12
To firmly attach the translucent member 10 to the fixing member 9
A third layer 12c made of at least one of gold, platinum, and copper;
Are formed by sequentially laminating, in particular
Metallization formed by sequentially laminating titanium-platinum-gold
The layer 12 has a high bonding strength with the translucent member 10 and a low
The translucent member 10 having good wettability with the material is fixed to the fixing member 9.
Metallization layer 12
It is very suitable. The above titanium, titanium-tungsten,
First layer 12a made of at least one kind of tantalum nitride
And at least one of platinum, nickel and nickel-chromium
A second layer 12b of seeds and at least gold, platinum, copper
Metal layer having a three-layer structure with one kind of third layer 12c
Layer 12 is made of a light-transmissive member,
Sputtering method, vapor deposition method, ion press
It is applied to a predetermined thickness sequentially by coating method, plating method, etc.
Formed. Further, the metallized layer 12 is made of titanium,
At least one of titanium-tungsten and tantalum nitride
A first layer 12a of platinum, nickel, nickel
A second layer 12b of at least one of chromium, gold,
A third layer 12c made of at least one of platinum and copper
When formed, the thickness of the first layer 12a is 500 angstroms.
When the thickness of the metallized layer 12 is less than
Bonding strength tends to be weak, and
When the thickness of the first layer 12 exceeds
a large stress is generated in the first layer 12a when depositing a.
The first layer 12a is formed of a light-transmitting member
The first layer 12 has a tendency to peel more easily than the first layer 12.
The thickness of a is 500 Å to 2000 Å
It is preferable that the second layer 1
Light transmission when the layer thickness of 2b is less than 500 Å
The heat generated when brazing the elastic member 10 to the fixing member 9
Effectively prevents the first layer 12a from diffusing into the third layer 12c
The light transmitting member 10 of the metallized layer 12 cannot be formed.
There is a risk that the bonding strength to
If it exceeds 10,000 angstroms, it will be on the first layer 12a.
When the second layer 12b is applied to the
And the second layer 12b
Is more likely to peel off than the first layer 12a
The thickness of the second layer 12b is 500 Å to 10 Å.
Preferably in the range of 2,000 Angstroms
If the thickness of the third layer 12c is less than 0.5 μm,
The wettability of the brazing material to the rise layer 12 is greatly improved.
Instead, the translucent member 10 is firmly brazed to the fixing member 9 and attached.
Tends to be difficult, and if it exceeds 5 μm,
When the third layer 12c is deposited on the second layer 12b, the third layer
Large stress is generated inside 12c, and the internal stress
Tends to peel off the third layer 12c more easily than the second layer 12b
, The thickness of the third layer 12c is 0.5 μm to 5 μm.
It is preferable to keep the range of μm. Further, the frame 2 has a notch 2b on its side.
The notch 2b has a ceramic terminal body 6 formed therein.
Is inserted. The ceramic terminal 6 is made of an electrically insulating material.
Composed of an insulator 7 and a plurality of metallized wiring layers 8.
The metallized wiring layer 8 is also electrically insulated from the frame 2.
The effect of disposing from the inside to the outside of the frame 2 is
Then, a metallized metal layer is previously deposited on the side surface of the insulator 7.
And the metallized metal layer is
a By attaching to the inner wall surface with a brazing material such as silver brazing
And is inserted into the notch 2 a of the frame 2. The insulator 7 of the ceramic terminal 6 is oxidized.
Aluminum sintered body, mullite sintered body, glass ceramic
Made of a sinter, such as aluminum oxide
In the case of a sintered body, aluminum oxide, silicon oxide,
Suitable for raw material powders such as magnesium oxide and calcium oxide
Add mutable organic binders, solvents, etc. and mix to form a slurry
Along with the slurry, the doctor blade method or calendar
By adopting the roll method,
Sheet (ceramic raw sheet), and then
When the appropriate punching process is applied to the lamic green sheet
Both of them are laminated and fired at a temperature of about 1600 ° C
It is produced by doing. The ceramic terminal body 6 has a frame 2
Plural metallized wiring derived from inside to outside
Layer 8 is buried, and the frame 2 of the metallized wiring layer 8 is
Each electrode of the optical semiconductor element 4 is located in a region located inside the
Electrically connected via a bonding wire 12, and
An area outside the frame 2 is connected to an external electric circuit.
External lead terminal 13 is attached via a brazing material such as silver brazing.
Have been. The metallized wiring layer 8 is formed of the optical semiconductor element 4
Are used as conductive paths when connecting each electrode of
High melting point of tungsten, molybdenum, manganese, etc.
It is formed of metal powder. The metallized wiring layer 8 is made of tungsten,
Organic suitable for high melting point metal powders such as molybdenum and manganese
Metal paste obtained by adding and mixing a binder, solvent, etc.
Conventionally, a ceramic green sheet serving as an insulator 7 is
Print and apply in a predetermined pattern by a well-known screen printing method
By forming, the insulator 7 is formed. The metallized wiring layer 8 is exposed
Nickel, gold, etc. with excellent corrosion resistance and brazing material
Metal with excellent wettability with a thickness of 1 μm to 20 μm
If the metallized wiring layer 8 is adhered by the
Oxidative corrosion can be effectively prevented and metal
Firmly solder external lead terminals 13 to the wiring layer 8
Can be made. Therefore, the metallized wiring layer 8
Has excellent corrosion resistance of nickel, gold, etc. on the exposed surface.
Metal having excellent wettability with the brazing material is 1 μm to 20 μm.
It is preferable that it is applied to a thickness of μm. The metallized wiring layer 8 has an external lead.
Terminal 13 is brazed and attached via a brazing material such as silver brazing.
And the external lead terminal 13 is housed inside the container.
Each electrode of the optical semiconductor element 4 is electrically connected to an external electric circuit.
The external lead terminal 13 to an external electric circuit.
Opto-semiconductor element accommodated inside the container by connecting
The child 4 includes a bonding wire 12, a metallized wiring layer 8 and
Connected to an external electric circuit through the external lead terminals 13.
The Rukoto. The external lead terminal 13 is made of iron-nickel.
Made of metal materials such as cobalt alloy and iron-nickel alloy
Metal materials such as iron-nickel-cobalt alloys
Rolling and stamping into ingots made of
Method by applying a well-known metal working method such as
It is formed into a shape. Further, the frame 2 is provided on its upper surface with, for example, iron.
-Metals such as nickel-cobalt alloy and iron-nickel alloy
A lid member 3 made of a material is joined, and
An optical semiconductor element is provided inside a container comprising the frame 2 and the lid member 3.
The child 4 is hermetically sealed. Frame of the lid member 3
Bonding to the upper surface of the body 2 is performed by, for example, a seam welding method or the like.
It is done by contact. Thus, the package for housing an optical semiconductor element of the present invention is provided.
According to the cage, the optical semiconductor element mounting portion 14 of the heat sink 14
a, an electronically cooled element such as a Peltier element
The optical semiconductor element 4 is mounted and fixed with the
External leads via bonding wires 12
The terminal 3 is electrically connected, and then the lid 3
And the base 1, the heat radiating plate 15, the frame 2, the lid 3
The optical semiconductor element 4 is accommodated in a container made of
An optical fiber member is attached to the cylindrical fixing member 9 attached to the body 2.
Light as final product by attaching and connecting 11
It becomes a semiconductor device. The optical semiconductor device is controlled by the electronic cooling element 5.
While cooling the optical semiconductor element 4,
Optical excitation caused by the drive signal supplied from the air circuit
And the excited light is transmitted through a light transmitting member 10 to an optical fiber.
The optical fiber member 11
High-speed communication etc.
Used for In this case, the optical semiconductor element 4 is
The radiator plate 14 placed with the cooling element 5 interposed therebetween has a thickness
Unidirectional composites composed of carbon fibers with unidirectionally aligned carbon fibers
Chrome-iron alloy layers on both upper and lower surfaces of core 14b made of material
15a, copper layer 15b, iron-nickel alloy layer or iron
Gold having a three-layer structure of nickel-cobalt alloy layer 15c
Metal layer 15 formed by diffusion bonding
In the direction from the upper surface side to the lower surface side of the heat sink 14.
When the thermal conductivity is 300 W / mk or more, the upper surface side of the heat sink 14
Heat is selectively and efficiently transferred in one direction from the bottom to the bottom side
The electronic cooling element 5 emits
Heat is transferred in one direction from the upper surface to the lower surface of the heat sink 14.
And is efficiently radiated into the atmosphere from the lower side of the heat sink 14.
The base 1, the frame 2, the ceramic terminal 6, and the bond
Acting on the optical semiconductor element 4 through the
And as a result, the electronic cooling element of the optical semiconductor element 4
The cooling efficiency by the element 5 becomes high,
The optical semiconductor element 4 is always kept at an appropriate temperature even when the
It is necessary to operate the element 4 normally and stably for a long time.
It becomes possible. The present invention is not limited to the above-described embodiment.
Rather, the species is not deviated from the scope of the present invention.
Various changes are possible. [0045] According to the present invention, the package for housing an optical semiconductor device according to the present invention.
According to the above, the optical semiconductor element is mounted with the electronic cooling element in between.
The radiator to be placed should be from the upper side to the lower side of the radiator.
With a thermal conductivity of 300 W / m · k or more,
That is, the carbon fibers arranged in the thickness direction are bonded with carbon.
Chrome-iron alloy on both upper and lower surfaces of core made of directional composite material
Layer, copper layer, iron-nickel alloy layer or iron-nickel
Diffusion bonding of a metal layer having a three-layer structure of a cobalt alloy layer
The optical semiconductor element was replaced by Peltier element
Supplied from an external electric circuit while cooling with an electronic cooling element such as a child
When optically excited by the drive signal
The heat generated by the element is transferred selectively from the upper side to the lower side of the radiator.
A frame-shaped substrate, frame that is reached and released into the atmosphere
Body, ceramic terminal body and bonding wire
It does not act on the optical semiconductor device and, as a result,
The cooling efficiency of the body element by the electronic cooling element is high.
The temperature of the optical semiconductor device is always appropriate even with a low-power thermoelectric cooler.
And stable optical semiconductor elements for a long period of time
It can be activated.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing one embodiment of a package for housing an optical semiconductor element of the present invention. FIG. 2 is a plan view of the package for housing semiconductor elements shown in FIG. 1 excluding a lid member. FIG. 3 is a partially enlarged cross-sectional view of a heat sink used in the package for housing a semiconductor element shown in FIG. 1; FIG. 4 is a partially enlarged cross-sectional view for explaining a light-transmitting member used for the semiconductor element housing package shown in FIG. [Description of Signs] 1 ··· Base 2 ··· Frame 2a ··· Through hole 2b ··· Notch 3 ···· Cover member 4 ···· Optical semiconductor element 5 ··· Electronic cooling element 6 Ceramic terminal 7 Insulator 8 Metallized wiring layer 9 Fixing member 10 Translucent member 11 Optical fiber member 14 ······································· Heat sink 14a ································································································································ “'''''''''' _____________________________ -Nickel-cobalt alloy layer

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 23/02 H01L 23/12-23/15 H01L 23/373 H01S 5/022-5/024

Claims (1)

(57) [Claims 1] A frame-shaped base, and inserted into a hole of the base,
A heatsink having a mounting portion on which an optical semiconductor element is mounted via an electronic cooling element, and a heat sink attached to the base so as to surround the optical semiconductor element mounting portion, and a through hole formed in a side portion; A frame having a notch portion, a cylindrical fixing member attached to the through hole or a frame around the through hole, and an optical fiber member joined thereto, and an optical semiconductor inserted into the notch portion and attached to the insulator. An optical semiconductor comprising a ceramic terminal body on which a metallized wiring layer to which each electrode of the element is electrically connected is formed, and a lid member attached to the upper surface of the frame body and hermetically sealing the optical semiconductor element. An element storage package, wherein the radiator plate has a chromium-iron alloy layer, a copper layer, an iron-nickel alloy layer, Iron-nickel-cobalt alloy layer A metal layer having a three-layer structure is formed by being applied by diffusion bonding, and each of the chromium-iron alloy layer, copper layer, iron-nickel alloy layer, or iron-nickel-cobalt alloy layer has substantially the same thickness. A package for housing an optical semiconductor element, characterized in that: