JP2000150745A - Package for housing optical semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent decrease in cooling efficiency of an optical semiconductor element by an electronic cooling element caused by action of heat from the electronic cooling element for cooling the optical semiconductor element on the optical semiconductor element. SOLUTION: A radiating plate 14 on which an optical semiconductor. element 4 is placed via an electronic cooling element 5 has a core body 14b consisting of a unidirectional composite material having carbon fibers arrayed in the thickness direction and connected by carbon. Both the upper and lower surfaces of the core body 14b are coated with a metal layer 15 having a three-layered structure of a chromium-iron alloy layer 15a, a copper layer 15b and an iron- nickel alloy layer or an iron-nickel-cobalt alloy layer 15c by diffusion bonding. The chromium-iron alloy layer 15a, the copper layer 15b and the iron-nickel alloy layer or iron-nickel-cobalt layer 15c have generally the same thickness.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor element housing package for housing an optical semiconductor element.

[0002]

2. Description of the Related Art Conventionally, an optical semiconductor device housing package for housing an optical semiconductor device is generally made of a metal material such as an iron-nickel-cobalt alloy or a copper-tungsten alloy. A base having a mounting portion to be mounted with the electronic cooling element interposed therebetween, and a base material joined to the optical semiconductor device mounting portion via a brazing material such as silver brazing so as to surround the mounting portion; A frame made of a metal material such as an iron-nickel-cobalt alloy having a through-hole and a notch, and a frame around the through-hole or the through-hole of the frame, and an optical signal is transmitted inside. A cylindrical fixing member made of a metal material such as an iron-nickel-cobalt alloy having a space, and a melting point of the cylindrical fixing member of 200 to 400 ° C.
A translucent member made of amorphous glass or the like that closes the inside of the fixing member attached via a low melting point brazing material such as a gold-tin alloy, and an aluminum oxide that is inserted into the cutout of the frame and is inserted. A ceramic terminal body in which a metallized wiring layer in which each electrode of the optical semiconductor element is electrically connected to an insulator made of a porous sintered body through a bonding wire is attached to an upper surface of the frame, A lid member for hermetically sealing the optical semiconductor element, and mounting and fixing the optical semiconductor element on the optical semiconductor element mounting portion of the base with an electronic cooling element such as a Peltier element interposed therebetween. Each electrode of the optical semiconductor element is electrically connected to the metallized wiring layer of the ceramic terminal body via a bonding wire, and thereafter, a lid member is joined to the upper surface of the frame, and the base, the frame, and the lid are separated from each other. Light guide inside the container An optical fiber member into the cylindrical fixing member accommodates the device in an airtight, for example, the optical semiconductor device as a product by attaching the YAG welding or the like.

In such an optical semiconductor device, while the optical semiconductor element is cooled by an electronic cooling element, optical excitation is caused to the optical semiconductor element by a drive signal supplied from an external electric circuit, and the excited light is transmitted through an optical fiber through a light transmitting member. It is used for high-speed communication and the like by transmitting and receiving the member and transmitting the inside of the optical fiber of the optical fiber member.

[0004]

However, in this conventional package for housing an optical semiconductor element, a metal material such as an iron-nickel-cobalt alloy or a copper-tungsten alloy or a ceramic terminal forming a base and a frame is used. Since the thermal conductivity of the aluminum oxide sintered body forming the insulator of the body is 15 W / m · k or more, the optical semiconductor element is cooled by an electronic cooling element such as a Peltier element or the like from an external electric circuit. When photo-excitation is performed by a supplied drive signal, the temperature of the upper surface of the electronic cooling element such as a Peltier element on which the optical semiconductor element is mounted is low, but the temperature of the lower surface in contact with the base is high (about 100 ° C.). Therefore, the heat generated by the electronic cooling element greatly affects the optical semiconductor element via the base, the frame, the ceramic terminal body, and the bonding wire, and this electronic cooling element It had a drawback that the cooling efficiency by the electronic cooling element of the optical semiconductor element is reduced greatly by heat. Therefore, conventionally, the output of the electronic cooling element is increased to absorb both the heat generated by the optical semiconductor element during operation and the heat of the electronic cooling element transmitted to the optical semiconductor element via the base, the frame, and the like. Needed.

The present invention has been devised in view of the above-mentioned drawbacks, and has as its object to effectively prevent the heat of the electronic cooling element from acting on the optical semiconductor element, and to provide the optical semiconductor element with a low-output electronic cooling element. It is an object of the present invention to provide an optical semiconductor element housing package that can always operate the optical semiconductor element normally and stably for a long time by setting the temperature of the optical semiconductor element to an appropriate temperature.

[0006]

According to the present invention, there is provided a frame-shaped base, and a mounting part which is inserted into a hole of the base and on which an optical semiconductor element is mounted via an electronic cooling element. A radiator plate, a frame attached to the base so as to surround the optical semiconductor element mounting portion, and having a through hole and a cutout on a side portion; and a frame around the through hole or the through hole. Dressed,
A cylindrical fixing member to which an optical fiber member is joined, and a ceramic terminal body in which a metallized wiring layer that is inserted into the cutout and electrically connects each electrode of the optical semiconductor element to an insulator is formed. An optical semiconductor element housing package attached to the upper surface of the frame body and comprising a lid member for hermetically sealing the optical semiconductor element, wherein the heat sink is formed by bonding carbon fibers arranged in the thickness direction with carbon. A metal layer having a three-layer structure of a chromium-iron alloy layer, a copper layer, an iron-nickel alloy layer, or an iron-nickel-cobalt alloy layer is formed on both upper and lower surfaces of a core made of a unidirectional composite material by diffusion bonding. And the thickness of each of the chromium-iron alloy layer, copper layer, iron-nickel alloy layer or iron-nickel-cobalt alloy layer is substantially the same.

According to the package for storing an optical semiconductor element of the present invention, the optical semiconductor element has a thermal conductivity from the upper surface side to the lower surface side of the heat radiator as a radiator mounted with the electronic cooling element interposed therebetween. A chromium-iron alloy layer, a copper layer, and an iron-nickel alloy layer on both upper and lower surfaces of a core member made of a unidirectional composite material in which carbon fibers arranged in the thickness direction are bonded with carbon, that is, a member having a power of 300 W / mk or more. Or, a drive supplied from an external electric circuit while cooling the optical semiconductor device with an electronic cooling device such as a Peltier device because a diffusion-bonded metal layer having a three-layer structure of an iron-nickel-cobalt alloy layer is used. When light is excited by a signal, the heat generated by the thermoelectric cooler is selectively transmitted from the upper surface to the lower surface of the heat radiator and is radiated into the atmosphere to be frame-shaped base, frame, ceramic terminal. The optical semiconductor element does not act on the optical semiconductor element via the bonding wires, and as a result, the cooling efficiency of the electronic semiconductor element of the optical semiconductor element becomes high. The element can operate normally and stably for a long period of time.

[0008]

Next, the present invention will be described in detail with reference to the accompanying drawings. 1 to 4 show one embodiment of the package for housing an optical semiconductor element of the present invention, wherein 1 is a frame-shaped base,
14 is a radiator, 2 is a frame, and 3 is a lid member. The base 1, the heat radiating plate 14, the frame 2, and the lid member 3 constitute a container for housing the optical semiconductor element 4 therein.

The frame-shaped substrate 1 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy, and has a central portion formed with a hole into which a heat sink 14 is inserted.

The frame-shaped substrate 1 is formed into a predetermined shape by subjecting an ingot (lumps) of, for example, an iron-nickel-cobalt alloy to a conventionally known metal working method such as a rolling method or a punching method. Is done.

A heat sink 14 is inserted into a hole formed at the center of the base 1, and the heat sink 14 functions as a support member for supporting the optical semiconductor element 4.
A mounting portion 14a for mounting the optical semiconductor element 4 is provided substantially at the center of the upper surface, and the optical semiconductor element 4 is interposed between the mounting portions 14a with an electronic cooling element 5 such as a Peltier element interposed therebetween. It is bonded and fixed via low-temperature solder such as tin-bismuth.

As shown in FIG. 3, the radiator plate 14 includes a chromium-iron alloy layer 15a and a copper layer on both upper and lower surfaces of a core 14b made of a unidirectional composite material in which carbon fibers arranged in the thickness direction are bonded with carbon. 15b, a metal layer 15 having a three-layer structure of an iron-nickel alloy layer or an iron-nickel-cobalt alloy layer 15c deposited by diffusion bonding;
The heat conductivity is 300 W / m · k or more in the direction of the carbon fibers of the core 14 b made of the unidirectional composite material, that is, in the direction from the upper surface side to the lower surface side of the radiator 14. On the other hand, the thermal conductivity in the direction perpendicular to the direction is 30 W / m · k
In the following, heat is selectively and efficiently transmitted in one direction from the upper surface side to the lower surface side of the heat sink 14. Therefore, the core body 14b made of the unidirectional composite material
When the semiconductor element 4 is placed and fixed on the upper surface of the heat sink 14 using an electronic cooling element 5 such as a Peltier element, the heat generated by the electronic cooling element 5 is from the upper side to the lower side of the heat sink 14. , And is efficiently radiated from the lower surface side of the heat sink 14 into the atmosphere.

The core 14b made of the unidirectional composite material of the heat radiating plate 14 is made of, for example, a bundle of carbon fibers arrayed in one direction, such as a solid pitch or a phenol resin in which fine powder such as coke is dispersed. Impregnated in a solution of thermosetting resin, and then dried to form a plurality of sheets in which carbon fibers are arranged in one direction, and to make each sheet have the same direction of carbon fibers. Then, a predetermined pressure is applied to the plurality of stacked sheets and heated to cure the thermosetting resin portion, and finally, this is fired at a high temperature in an inert atmosphere to obtain phenol. It is manufactured by carbonizing resin and fine powder of pitch or coke (forming carbon) and bonding each carbon fiber with the carbon.

A core 14b made of a unidirectional composite material of the heat sink 14 has chromium-iron alloy layers 1 on its upper and lower surfaces.
5a, a copper layer 15b, and an iron-nickel alloy layer or an iron-nickel-cobalt alloy layer 15c. And the iron-nickel alloy layer or the iron-nickel-cobalt alloy layer 15c have substantially the same thickness.

The metal layer 15 is formed of three layers of a chromium-iron alloy layer 15a, a copper layer 15b, and an iron-nickel alloy layer or an iron-nickel-cobalt alloy layer 15c having substantially the same thickness. The thermal expansion coefficient of the heat radiating plate 14 made of about 10 × 10 ⁻⁶ / ° C. to 13 × 10 ⁻⁶ / ° C. (room temperature to 800 ° C.) and the frame-shaped base 1 and an iron-nickel-cobalt alloy or iron-nickel Frame 2 made of alloy
The core 14b is made of a unidirectional composite material so as to approximate the thermal expansion coefficient of
The heat radiating plate 14 in which the metal layers 15 are adhered to the upper and lower surfaces of the core 14b is caused by the difference in thermal expansion coefficient between the core 14b and the upper metal layer 15 and between the core 14b and the lower metal layer 15. However, the respective thermal stresses are offset by the different positions of the metal layer 15 on the core body 14b, and as a result, the heat sink 14 is attached to the core body 14b and the metal layer 15b.
Therefore, the optical semiconductor element 4 can be firmly fixed to the upper surface of the heat radiating plate 14 with the electronic cooling element 5 interposed therebetween, without being deformed by the thermal stress generated between the optical semiconductor element 4 and the flat surface. At the same time, the heat generated by the electronic cooling element 5 can be efficiently radiated into the atmosphere via the radiator plate 14.

The metal layer 15 is applied to the upper and lower surfaces of a core 14b made of a unidirectional composite material by diffusion bonding. Specifically, the core 14b made of a unidirectional composite material is used. A chromium-iron alloy foil and a copper foil and an iron-nickel alloy or an iron-nickel-cobalt alloy foil having a thickness of 50 μm or less are sequentially placed on the upper and lower surfaces, and then a pressure of 5 MPa is applied by a vacuum hot press. This is performed by applying a temperature of 1200 ° C. for 1 hour while applying.

The chromium-iron alloy layer 1 of the metal layer 15
5a is a metal layer 15 formed by a core 14 made of a unidirectional composite material.
b), and the copper layer 15b firmly joins the chromium-iron alloy layer 15a and the iron-nickel alloy layer or the iron-nickel-cobalt alloy layer 15c, and effectively interdiffuses the two. In addition, the iron-nickel alloy layer or the iron-nickel-cobalt alloy layer 15c, together with the chromium-iron alloy layer 15a and the copper layer 15b, has a thermal expansion coefficient of about 10 × 1
It functions to be 0 ^-6 / ° C to 13 × 10 ^-6 / ° C (room temperature to 800 ° C).

A core 14b made of the unidirectional composite material
When the optical semiconductor device 4 is housed in the optical semiconductor device housing package using the heat sink 14 and the optical semiconductor device is formed, the heat sink 14 using the heat sink 14 is light in weight.
The weight of the optical semiconductor device is also extremely light, and it is possible to mount the optical semiconductor device on electronic devices that have recently been reduced in size and weight.

Further, a frame 2 is joined to the upper surface of the base 1 on which the heat sink 14 is inserted so as to surround a mounting portion 14a on which the optical semiconductor element 4 is mounted. Body 2
A space for accommodating the optical semiconductor element 4 is formed inside the inside.

The frame 2 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy. For example, the frame 2 is formed by pressing an ingot (mass) of an iron-nickel-cobalt alloy or the like into a frame shape by pressing. The attachment to the frame-shaped substrate 1 is performed by brazing the upper surface of the substrate 1 and the lower surface of the frame 2 via a silver brazing material.

The frame 2 made of a metal material such as the iron-nickel-cobalt alloy or the iron-nickel alloy has a thermal expansion coefficient of about 10 × 10 ⁻⁶ / ° C. to 13 × 10 ⁻⁶ / ° C. (room temperature to 8 ° C.).
00 ° C.) and the coefficient of thermal expansion of the substrate 1 (about 10 × 10 ^−6).
/ ° C. to 13 × 10 ⁻⁶ / ° C .: room temperature to 800 ° C.), so that even if heat is applied to both after the frame 2 is attached to the base 1, a large heat is applied between them. No stress is generated, and the frame 2 can be extremely firmly attached to the base 1.

The frame 2 is provided with a through hole 2a on a side portion thereof. A cylindrical fixing member 9 is attached to an inner wall surface of the through hole 2a. At one end, for example, a light-transmissive member 10 is attached.

A through hole 2a formed in the side of the frame 2 acts as a mounting hole for mounting the fixing member 9 to the frame 2, and a well-known drill is formed in the side of the frame 2. It is formed in a predetermined shape by performing drilling.

A fixing member 9 attached to the through hole 2a of the frame 2 functions as a base fixing member for fixing the optical fiber member 11 to the frame 2, and also converts the light excited by the optical semiconductor element 4 into an optical fiber. A function of transmitting the light to the member 11 is provided.
0 is attached, and an optical fiber member 1
1 is attached and connected.

The cylindrical fixing member 9 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy.
For example, it is formed by pressing an iron-nickel alloy ingot into a tubular shape.

Further, the fixing member 9 is provided at one inner end thereof.
For example, a translucent member 10 is attached, the translucent member 10 closes the internal space of the fixing member 9, and the base 1 and the frame 2
The light excited by the optical semiconductor element 4 that transmits the internal space of the fixing member 9 is transmitted to the optical fiber member 11 that is attached to and connected to the fixing member 9 as it is, while maintaining the hermetic sealing of the container including the lid member 3 and the container. Works.

The light transmitting member 10 is made of, for example, silicon oxide,
It is made of lead-based and boric acid containing lead oxide as a main component, and borosilicate-based amorphous glass containing silica sand as a main component.
Since the amorphous glass has no crystal axis, the light excited by the optical semiconductor element 4 is transmitted and received by the optical fiber member 11 through the light-transmitting member 10. The birefringence does not occur in the member 10 and is transmitted and received to the optical fiber member 11 as it is. As a result, the transmission and reception of the light excited by the optical semiconductor element 4 to and from the optical fiber member 11 becomes highly efficient, and the transmission efficiency of the optical signal is increased. Can be made higher.

As shown in FIG. 4, for example, as shown in FIG. 4, the light transmitting member 10 is attached to the fixing member 9 by previously attaching a metallization layer 12 to the outer periphery of the light transmitting member 10. This is performed by brazing the fixing member 9 and the fixing member 9 via a brazing material such as a gold-tin alloy. In this case, since the attachment of the translucent member 10 to the fixing member 9 is performed by brazing with a gold-tin alloy or the like, the attachment is highly reliable. The hermetic sealing of the container housing the optical semiconductor element 4 at the portion where the optical semiconductor element 4 is attached to the container 10 is completed, and the optical semiconductor element 4 housed inside the container can be normally and stably operated for a long period of time.

The metallized layer 12 previously applied to the outer peripheral portion of the light transmitting member 10 has a low melting point of about 700 ° C. of the amorphous glass constituting the light transmitting member 10, and the conventionally known Mo is used. As shown in FIG. 4, since at least one of titanium, titanium-tungsten, and tantalum nitride that are active and strongly bonded to amorphous glass because they cannot be formed by employing the Mn method, The first layer 12a and the first layer 12a diffuse into a third layer 12c, which will be described later, due to heat generated when the translucent member 10 is brazed to the fixing member 9, and the metallized layer 12 is applied to the translucent member 10. A second layer (12b) made of at least one of platinum, nickel, and nickel-chromium, which effectively prevents a decrease in bonding strength; A third layer 12c made of at least one of gold, platinum, and copper, in which a brazing material is firmly bonded to the oil layer 12 and the translucent member 10 is firmly attached to the fixing member 9, is sequentially laminated. Particularly, the metallized layer 12 formed by sequentially laminating titanium-platinum-gold has a strong bonding strength with the light-transmitting member 10 and a good wettability with the brazing material, so that the light-transmitting member 10 is fixed. Since it can be brazed to the member 9, it is very suitable as the metallized layer 12.

The above titanium, titanium-tungsten,
First layer 12a made of at least one kind of tantalum nitride
And at least one of platinum, nickel and nickel-chromium
The metallized layer 12 having a three-layer structure of a second layer 12b made of a seed and a third layer 12c made of at least one of gold, platinum, and copper is made of a metal material and a nitride of the light-transmitting member 10. It is formed by sequentially applying a predetermined thickness to the outer peripheral portion by a sputtering method, a vapor deposition method, an ion plating method, a plating method, or the like.

Further, the metallized layer 12 is made of titanium,
A first layer 12a made of at least one of titanium-tungsten and tantalum nitride; a second layer 12b made of at least one of platinum, nickel and nickel-chromium;
When the third layer 12c made of at least one of platinum and copper is used, if the thickness of the first layer 12a is less than 500 angstroms, the bonding strength of the metallized layer 12 to the translucent member 10 tends to be weak. When the thickness exceeds 2000 angstroms, the first layer 12
When the first layer 12a is applied, a large stress is generated in the first layer 12a and the first layer 12a tends to be easily separated from the light transmitting member 10 due to the intrinsic stress.
The thickness of a is preferably in the range of 500 Å to 2000 Å, and the second layer 1
If the thickness of the layer 2b is less than 500 angstroms, it is not possible to effectively prevent the first layer 12a from diffusing into the third layer 12c due to heat generated when the translucent member 10 is brazed to the fixing member 9, Transparent member 10 of metallized layer 12
When the thickness exceeds 10,000 Å, a large stress is generated in the second layer 12b when the second layer 12b is deposited on the first layer 12a. 2nd layer 12b by stress
Has a tendency to peel off more easily than the first layer 12a, so that the thickness of the second layer 12b is 500 Å to 10 Å.
When the thickness of the third layer 12c is less than 0.5 μm, the wettability of the brazing material with respect to the metallized layer 12 is not significantly improved, and the light transmitting member 10 is fixed to the fixing member 9. There is a tendency that it is difficult to firmly braze and attach. If it exceeds 5 μm, a large stress is generated in the third layer 12c when the third layer 12c is applied on the second layer 12b, Since the third layer 12c tends to be easily separated from the second layer 12b due to the intrinsic stress, the thickness of the third layer 12c is 0.5 μm to 5 μm.
It is preferable to keep the range of μm.

Further, the frame 2 has a notch 2b formed on a side thereof, and the notch 2b has a ceramic terminal 6
Is inserted.

The ceramic terminal 6 comprises an insulator 7 made of an electrically insulating material and a plurality of metallized wiring layers 8. The metallized wiring layer 8 is electrically insulated from the frame 2 from the inside to the outside of the frame 2. The metallized metal layer is previously applied to the side surface of the insulator 7 and the metallized metal layer is attached to the cutout 2 of the frame 2.
By being attached to the inner wall surface through a brazing material such as silver brazing, it is inserted into the cutout 2a of the frame 2.

The insulator 7 of the ceramic terminal body 6 is made of an aluminum oxide sintered body, a mullite sintered body, a glass ceramic sintered body, or the like. , Silicon oxide,
An appropriate organic binder, a solvent, and the like are added to and mixed with raw material powders such as magnesium oxide and calcium oxide to form a slurry, and the slurry is formed into a ceramic green sheet (ceramic green sheet) by employing a doctor blade method or a calendar roll method. After that, the ceramic green sheet is manufactured by subjecting the ceramic green sheet to appropriate punching processing, laminating a plurality of the sheets, and firing at a temperature of about 1600 ° C.

A plurality of metallized wiring layers 8 extending from the inside to the outside of the frame 2 are embedded in the ceramic terminal body 6.
Each electrode of the optical semiconductor element 4 is electrically connected to a region located inside the frame 2 through a bonding wire 12, and an external lead terminal connected to an external electric circuit is located in a region located outside the frame 2. Reference numeral 13 is attached via a brazing material such as a silver brazing material.

The metallized wiring layer 8 is formed of the optical semiconductor element 4
These electrodes function as conductive paths when connecting the electrodes to an external electric circuit, and are formed of a high melting point metal powder such as tungsten, molybdenum, and manganese.

The metallized wiring layer 8 is made of tungsten,
A metal paste obtained by adding a suitable organic binder, a solvent, etc. to a high melting point metal powder such as molybdenum, manganese, etc., is applied to a ceramic green sheet serving as an insulator 7 in a predetermined pattern in advance by a conventionally known screen printing method. By forming, the insulator 7 is formed.

The metallized wiring layer 8 is formed by coating a metal having excellent corrosion resistance such as nickel and gold and having excellent wettability with a brazing material to a thickness of 1 μm to 20 μm on the exposed surface by plating. By doing so, the oxidation corrosion of the metallized wiring layer 8 can be effectively prevented, and the brazing of the external lead terminals 13 to the metallized wiring layer 8 can be made firm. Therefore, the metallized wiring layer 8
Is a metal having excellent corrosion resistance, such as nickel and gold, having excellent wettability with a brazing material on the exposed surface of 1 μm to 20 μm.
It is preferable that it is applied to a thickness of μm.

An external lead terminal 13 is attached to the metallized wiring layer 8 by brazing via a brazing material such as silver brazing. The external lead terminal 13 is attached to each of the optical semiconductor elements 4 housed in the container. The optical semiconductor element 4 accommodated in the container by connecting the external lead terminal 13 to the external electric circuit serves as a bonding wire 12, a metallized wiring layer 8, and an external lead. The terminal 13 is connected to an external electric circuit.

The external lead terminals 13 are made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy. For example, an ingot made of a metal material such as an iron-nickel-cobalt alloy is rolled or stamped. It is formed into a predetermined shape by applying a conventionally known metal working method such as a working method.

Further, a lid member 3 made of a metal material such as, for example, an iron-nickel-cobalt alloy or an iron-nickel alloy is joined to the upper surface of the frame 2 to thereby form the base 1.
The optical semiconductor element 4 is hermetically sealed inside a container composed of the frame member 2 and the lid member 3. The joining of the lid member 3 to the upper surface of the frame 2 is performed by, for example, welding such as a seam welding method.

Thus, according to the optical semiconductor element housing package of the present invention, the optical semiconductor element mounting portion 14 of the heat sink 14 is provided.
a, the optical semiconductor element 4 is mounted and fixed with an electronic cooling element 5 such as a Peltier element interposed therebetween.
Are electrically connected to the external lead terminals 3 via the bonding wires 12, and then the lid member 3 is attached to the upper surface of the frame 2.
And the optical semiconductor element 4 is housed in a container including the base 1, the heat radiating plate 15, the frame 2, and the cover 3, and finally the optical fiber is attached to the cylindrical fixing member 9 attached to the frame 2. By attaching and connecting the member 11, an optical semiconductor device as a final product is obtained.

In such an optical semiconductor device, while the optical semiconductor element 4 is cooled by the electronic cooling element 5, the optical semiconductor element 4 is optically excited by a drive signal supplied from an external electric circuit, and the excited light is transmitted to the light transmitting member. The optical fiber member 11 is transmitted to and received from the optical fiber member 11 through the optical fiber member 11.
It is used for high-speed communication and the like by transmitting through an optical fiber. In this case, the heat radiating plate 14 on which the optical semiconductor element 4 is placed with the electron cooling element 5 interposed therebetween has a core 14b made of a unidirectional composite material in which carbon fibers arranged in the thickness direction are bonded with carbon. And a metal layer 15 having a three-layer structure of a chromium-iron alloy layer 15a, a copper layer 15b, an iron-nickel alloy layer or an iron-nickel-cobalt alloy layer 15c formed on both upper and lower surfaces by diffusion bonding. When the heat conductivity in the direction from the upper surface side to the lower surface side of the heat sink 14 is 300 W / m · k or more, heat is selectively and efficiently transmitted in one direction from the upper surface side to the lower surface side of the heat sink 14. As a result, the heat generated by the electronic cooling element 5 is transmitted in one direction from the upper surface side to the lower surface side of the radiator plate 14, and is efficiently radiated from the lower surface side of the radiator plate 14 into the atmosphere, so that the base 1, Frame 2, ceramic The optical semiconductor element 4 hardly acts on the optical semiconductor element 4 via the terminal body 6 and the bonding wire 12. As a result, the cooling efficiency of the optical semiconductor element 4 by the electronic cooling element 5 is high, and the electronic cooling element 5 with low output can be used. The optical semiconductor element 4 can be normally and stably operated for a long period of time by keeping the optical semiconductor element 4 at an appropriate temperature.

The present invention is not limited to the above-described embodiment, and various changes can be made without departing from the gist of the present invention.

[0045]

According to the package for housing an optical semiconductor element of the present invention, the heat conduction from the upper surface to the lower surface of the heat radiator is used as the heat radiator in which the optical semiconductor element is mounted with the electronic cooling element interposed therebetween. A chromium-iron alloy layer, a copper layer, an iron-nickel alloy on both upper and lower surfaces of a member having a ratio of 300 W / mk or more, that is, a core made of a unidirectional composite material in which carbon fibers arranged in the thickness direction are bonded by carbon. The optical semiconductor element is supplied from an external electric circuit while being cooled by an electronic cooling element such as a Peltier element since a diffusion layer of a metal layer having a three-layer structure of an iron-nickel-cobalt alloy layer is used. When photo-excited by a drive signal, heat generated by the thermoelectric cooler is selectively transmitted from the upper surface to the lower surface of the heat radiator and is radiated into the air to form a frame-shaped base, a frame, and a ceramic terminal. In addition, the optical semiconductor element does not act on the optical semiconductor element via the bonding wire, and as a result, the cooling efficiency of the optical semiconductor element by the electronic cooling element is high, and the optical semiconductor element is always kept at an appropriate temperature even with the low-power electronic cooling element. The element can operate normally and stably for a long period of time.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an embodiment of a package for housing an optical semiconductor element of the present invention.

FIG. 2 is a plan view of the semiconductor device housing package shown in FIG. 1 without a cover member.

FIG. 3 is a partially enlarged cross-sectional view of a heat sink used in the semiconductor element housing package shown in FIG. 1;

FIG. 4 is a partially enlarged cross-sectional view for explaining a light-transmitting member used for the semiconductor device housing package shown in FIG. 1;

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Base body 2 ... Frame 2a ... Through-hole 2b ... Notch 3 ... Cover member 4 ... Optical semiconductor element 5 ... Electronic cooling element 6 ... ··· Ceramic terminal 7 ··· Insulator 8 ··· Metallized wiring layer 9 ··· Fixing member 10 ··· Translucent member 11 ··· Optical fiber member 14 ··· Heat dissipation Plate 14a ・ ・ ・ Placement part 14b ・ ・ ・ Core 15 ・ ・ ・ ・ ・ ・ Metal layer 15a ・ ・ ・ Chrome-iron alloy layer 15b ・ ・ ・ Copper layer 15c ・ ・ ・ Iron-nickel alloy layer or iron-nickel-cobalt alloy layer

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (Reference) H01S 5/022 H01L 23/36 M

Claims (1)

[Claims] 1. A frame-shaped base, inserted into a hole of the base,
A heatsink having a mounting portion on which an optical semiconductor element is mounted via an electronic cooling element; and a heat sink attached to the base so as to surround the optical semiconductor element mounting portion, and a through hole formed in a side portion. And a frame having a notch, a cylindrical fixing member attached to the through-hole or the frame around the through-hole, and joined to the optical fiber member, and an optical semiconductor mounted on the insulator by being inserted into the notch. An optical semiconductor comprising a ceramic terminal body on which a metallized wiring layer to which each electrode of the element is electrically connected is formed, and a lid member attached to the upper surface of the frame body and hermetically sealing the optical semiconductor element. An element storage package, wherein the radiator plate has a chromium-iron alloy layer, a copper layer, an iron-nickel alloy layer on both upper and lower surfaces of a core made of a unidirectional composite material in which carbon fibers arranged in a thickness direction are bonded with carbon. Iron-nickel-cobalt alloy layer A metal layer having a three-layer structure is formed by being applied by diffusion bonding, and each of the chromium-iron alloy layer, copper layer, iron-nickel alloy layer, or iron-nickel-cobalt alloy layer has substantially the same thickness. A package for housing an optical semiconductor element, characterized in that: