JP3981256B2 - Optical semiconductor element storage package - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an optical semiconductor element accommodation package for accommodating an optical semiconductor element.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, an optical semiconductor element housing package for accommodating an optical semiconductor element is generally made of a metal material such as iron-nickel-cobalt alloy or iron-nickel alloy, and the optical semiconductor element is placed in the center of the upper surface. An iron-nickel-cobalt alloy having a through hole and a notch formed on a side portion thereof, and a base member having a portion, and a brazing material such as silver brazing, which is joined to the base member so as to surround the optical semiconductor element mounting portion And an iron-nickel-cobalt alloy having a space that is attached to a through-hole of the frame or a frame around the through-hole, and to which an optical signal is transmitted. A cylindrical fixing member made of a metal material such as a metal, and a fixing member attached to the cylindrical fixing member with a low melting point brazing material such as a gold-tin alloy having a melting point of 200 to 400 ° C. Translucent made of amorphous glass A ceramic having a member and a wiring layer that is inserted into a notch portion of the frame and electrically connects each electrode of the optical semiconductor element to a ceramic insulator such as an aluminum oxide sintered body via a bonding wire It comprises a terminal body and a lid member that is attached to the upper surface of the frame body and hermetically seals the optical semiconductor element, and places the optical semiconductor element on the optical semiconductor element mounting portion of the base. Each electrode of the optical semiconductor element is electrically connected to the wiring layer of the ceramic terminal body via a bonding wire, and then a lid member is joined to the upper surface of the frame body, and the base, the frame body, and the lid member are joined. An optical semiconductor device as a product is obtained by housing an optical semiconductor element in an airtight container and attaching an optical fiber member to a cylindrical fixing member by, for example, YAG welding.
[0003]
In the above-described package for housing an optical semiconductor element, since the optical semiconductor element housed therein is driven in a high frequency region and is easily affected by external noise, the base body and the frame body are formed of a metal material, and the container Shielding the inside prevents the external noise from affecting the optical semiconductor element. The base and the frame are generally made of iron-nickel-cobalt alloy or iron-nickel alloy in order to match the linear thermal expansion coefficient of a ceramic terminal body or an optical semiconductor element.
[0004]
However, in this conventional package for storing an optical semiconductor element, the thermal conductivity of the substrate on which the optical semiconductor element is placed and fixed is about 20 W / m · K, and heat cannot be transmitted efficiently. When the semiconductor element generates heat during operation, the heat cannot be sufficiently dissipated to the outside through the base, and as a result, the optical semiconductor element becomes high temperature by the heat generated by the optical semiconductor element itself, and the thermal destruction is caused. It has the disadvantages of causing malfunctions, causing thermal degradation in characteristics, and malfunctioning.
[0005]
Therefore, in order to eliminate the above drawbacks, it is considered that the base is formed of a copper-tungsten alloy or a copper-molybdenum alloy having a high thermal conductivity and a linear thermal expansion coefficient that approximates the linear thermal expansion coefficient of the ceramic terminal body. It is done.
[0006]
Such copper-tungsten alloy and copper-molybdenum alloy are generally produced by firing a tungsten powder or molybdenum powder to obtain a sintered porous body, and then impregnating molten copper into the pores of the sintered porous body. For example, when copper is impregnated into a sintered porous body made of tungsten, the sintered porous body is in the range of 75 to 90% by weight and copper is in the range of 10 to 25% by weight. When copper is impregnated, the sintered porous body is in the range of 80 to 90% by weight and copper is in the range of 10 to 20% by weight.
[0007]
[Problems to be solved by the invention]
However, in this conventional package for housing an optical semiconductor element, the base body bakes tungsten powder or molybdenum powder to obtain a sintered porous body and impregnates the molten copper in the pores of the sintered porous body. The thermal conductivity is about 180 W / m · K.
[0008]
For this reason, the optical semiconductor element storage package using a copper-tungsten alloy or the like that has been generally manufactured as a base is superior in heat dissipation than the optical semiconductor element storage package using an iron-nickel-cobalt alloy or the like as the base. However, if an optical semiconductor element that emits a large amount of heat compared to the conventional case is accommodated during operation, the heat generated by the optical semiconductor element cannot be completely released to the outside through the substrate. As a result, the optical semiconductor element has a disadvantage that it becomes high temperature due to heat generated by the element itself, causing the optical semiconductor element to be thermally destroyed or having a variation in characteristics, and cannot be operated stably.
[0009]
The present invention has been devised based on the above knowledge, and its purpose is to always maintain an optical semiconductor element that emits a large amount of heat at the time of operation with a high light emission output, and to make the optical semiconductor element function stably over a long period of time. This is to propose a package for housing an optical semiconductor element.
[0010]
[Means for Solving the Problems]
The present invention includes a base having a mounting portion on which an optical semiconductor element is mounted and an optical semiconductor element mounting portion mounted on the base so as to surround the through hole and a notch on the side. A frame made of an iron-nickel-cobalt alloy or an iron-nickel alloy, a fixing member attached to the through-hole or a frame around the through-hole, to which an optical fiber member is joined, and inserted into the notch A ceramic terminal body in which a wiring layer to which each electrode of the optical semiconductor element is connected to the ceramic insulator is formed; and a lid member that is attached to the upper surface of the frame body and hermetically seals the optical semiconductor element; an optical semiconductor element storage package consisting, the substrate Ri consists silicon carbide powder and 20 to 35 wt% of copper deposited oxide film 65 to 80 wt% of the surface was melted the Silicon carbide powder on copper The Der Rukoto are dispersed mixed those characterized.
[0011]
According to the optical semiconductor element storage package of the present invention, the base is carbonized into molten copper with silicon carbide powder having an oxide film deposited on the surface of 65 to 80% by weight and 20 to 35% by weight of copper. Even if the optical semiconductor element mounted on the substrate emits a large amount of heat during operation, it is formed by dispersing and mixing silicon powder and has a high thermal conductivity of 270 W / m · K or higher. The heat spreads quickly in the plane direction of the optical semiconductor element mounting portion of the base and can propagate well in the thickness direction of the base to efficiently and reliably dissipate to the outside. It becomes possible to operate the optical semiconductor element stably and normally over a long period of time.
[0012]
Further, according to the optical semiconductor element storage package of the present invention, the base is melted with copper carbide powder having an oxide film deposited on the surface of 65 to 80% by weight and copper of 20 to 35% by weight. Formed by dispersing and mixing silicon carbide powder , and its linear thermal expansion coefficient is a frame made of iron-nickel-cobalt alloy or iron-nickel alloy, or ceramic insulator such as aluminum oxide sintered body or glass ceramic sintered body Since it approximates the linear thermal expansion coefficient (6 ppm / ° C. to 8 ppm / ° C .: room temperature to 800 ° C.) of the ceramic terminal body made of Even when heat is applied to the base body, the frame body, and the ceramic terminal body when the semiconductor element is operated, the difference between the linear thermal expansion coefficients of the base body, the frame body, and the ceramic terminal body is large. Thermal stresses are not generated, thereby becomes always hermetic sealing of the cavity for accommodating the optical semiconductor element completely, the optical semiconductor element can be actuated stably and properly. In addition, in a base made of silicon carbide powder having an oxide film deposited on the surface of 65 to 80% by weight and copper of 20 to 35% by weight, the oxide film is deposited on the surface of the silicon carbide powder. As a result, the adhesion strength between the silicon carbide powder and copper is greatly improved, and the reliability of the substrate is greatly improved. In addition, since the substrate is formed by dispersing and mixing silicon carbide powder in molten copper, the substrate has a soft Young's modulus of about 100 GPa, which depends on the Young's modulus of copper. After the optical semiconductor element is placed on the substrate, even if heat acts on the base and the optical semiconductor element and a thermal stress is generated between the two, the thermal stress is efficiently absorbed by slightly deforming the base. The semiconductor element can be operated normally and stably without the semiconductor element being peeled off from the base and without being cracked or cracked in the optical semiconductor element.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
Next, the present invention will be described in detail based on embodiments shown in the accompanying drawings.
1 and 2 show an embodiment of an optical semiconductor element housing package according to the present invention. In FIG. 1, 1 is a base, 2 is a frame, and 3 is a lid member. The base body 1, the frame body 2, and the lid member 3 constitute a container 5 that contains the optical semiconductor element 4 in an airtight manner.
[0014]
The base 1 has a mounting portion 1a on which an optical semiconductor element 4 is mounted, and the optical semiconductor element 4 is attached to the mounting portion 1a.
[0015]
The base body 1 acts as a support member for supporting the optical semiconductor element 4 and absorbs heat generated when the optical semiconductor element 4 is in operation, and efficiently dissipates it into the atmosphere so that the optical semiconductor element 4 is always kept at an appropriate temperature. It works.
[0016]
Note the substrate 1 is made of oxide film and the silicon carbide powder and copper deposited on the surface, the oxide film dispersed and mixed with silicon carbide powder applied to the mean particle size 5μm about surface copper is molten by, it has been manufacturing work.
[0017]
Further, the frame body 2 is placed on the outer peripheral portion of the upper surface of the base body 1 with an adhesive such as a brazing material so as to surround the mounting portion 1a on which the optical semiconductor element 4 provided on the upper surface of the base body 1 is mounted. A space for accommodating the optical semiconductor element 4 is formed inside the frame 2.
[0018]
The frame 2 is formed of an iron-nickel-cobalt alloy or an iron-nickel alloy, and is formed by, for example, forming an ingot such as an iron-nickel-cobalt alloy into a frame shape by pressing. Attachment to 1 is performed by brazing the upper surface of the substrate 1 and the lower surface of the frame body 2 with a silver brazing material.
[0019]
The frame body 2 is provided with a through hole 2a on a side portion thereof, and a cylindrical fixing member 6 is attached to an inner wall surface of the through hole 2a, and further, at one end inside the cylindrical fixing member 6 For example, the translucent member 7 is attached.
[0020]
The through-hole 2a formed in the side part of the frame body 2 acts as an attachment hole for attaching the fixing member 6 to the frame body 2, and a conventionally well-known drilling process is performed on the side part of the frame body 2. To form a predetermined shape.
[0021]
The fixing member 6 attached to the through hole 2a of the frame body 2 acts as a base fixing member when fixing the optical fiber member 8 to the frame body 2, and the light excited by the optical semiconductor element 4 is applied to the optical fiber member 8. For example, a translucent member 7 is attached to one inner end, and an optical fiber member 8 is attached to one outer end.
[0022]
The cylindrical fixing member 6 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy. For example, an ingot such as an iron-nickel-cobalt alloy is formed into a cylindrical shape by pressing. Is formed.
[0023]
Further, for example, a translucent member 7 is attached to one end of the fixing member 6, and the translucent member 7 closes the internal space of the fixing member 6, and the base body 1, the frame body 2, and the lid. The container 5 composed of the member 3 is kept hermetically sealed, and the light excited by the optical semiconductor element 4 that transmits the internal space of the fixing member 6 is transmitted as it is to the optical fiber member 8 attached to the fixing member 6. .
[0024]
The translucent member 7 is made of, for example, lead-based silicon oxide, lead-based amorphous boric acid, and borosilicate-based amorphous glass mainly composed of silica sand. Since the crystal axis does not exist, when the light excited by the optical semiconductor element 4 passes through the translucent member 7 and is transmitted to the optical fiber member 8, the light excited by the optical semiconductor element 4 is duplicated by the translucent member 7. The optical fiber member 8 is transmitted and received without being refracted, and as a result, the transmission and reception of light excited by the optical semiconductor element 4 to the optical fiber member 8 is highly efficient and the transmission efficiency of the optical signal is high. Can be made.
[0025]
The translucent member 7 is attached to the fixing member 6 by, for example, preliminarily depositing a metal layer on the outer peripheral portion of the translucent member 7 and connecting the metal layer and the fixing member 6 to the gold- It is performed by brazing through a brazing material such as a tin alloy.
[0026]
Further, the frame body 2 is formed with a notch 2b on the side thereof, and a ceramic terminal body 9 is inserted into the notch 2b.
[0027]
The ceramic terminal body 9 is composed of a ceramic insulator 10 and a plurality of wiring layers 11. The ceramic terminal body 9 has an action of disposing the wiring layer 11 from the inner side to the outer side of the frame body 2 with electrical insulation with respect to the frame body 2. A metal layer is preliminarily deposited on the side surface of the insulator 10, and the metal layer is attached to the inner wall surface of the notch 2b of the frame 2 via a brazing material such as silver brazing, whereby the notch 2b of the frame 2 is obtained. Inserted.
[0028]
The ceramic insulator 10 of the ceramic terminal body 9 is made of an aluminum oxide sintered body, a glass ceramic sintered body, or the like. For example, in the case of an aluminum oxide sintered body, aluminum oxide, silicon oxide, magnesium oxide, oxide An appropriate organic binder, plasticizer, and solvent are added to the raw material powder such as calcium to make a slurry, and the slurry is made into a ceramic green sheet (ceramic green sheet) by adopting a conventionally known doctor blade method or calendar roll method. Sheet), and then subjecting the ceramic green sheet to an appropriate punching process to obtain a predetermined shape and, if necessary, a plurality of sheets are laminated to form a molded body, which is then heated at a temperature of 1600 ° C. Manufactured by firing.
[0029]
In addition, a plurality of wiring layers 11 led out from the inside to the outside of the frame body 2 are embedded in the ceramic terminal body 9, and the optical semiconductor element 4 is located in a region located inside the frame body 2 of the wiring layer 11. The external lead terminals 13 connected to an external electric circuit are brazed via a brazing material such as silver brazing in a region located outside the frame body 2. It is attached.
[0030]
The wiring layer 11 functions as a conductive path for connecting each electrode of the optical semiconductor element 4 to an external electric circuit, and is formed of a metal powder such as tungsten, molybdenum, manganese, copper, or silver.
[0031]
For the wiring layer 11, a metal paste obtained by adding and mixing a suitable organic binder, solvent, etc. to a metal powder such as tungsten, molybdenum, manganese, copper, silver, etc. is well known in advance in a ceramic green sheet to be a ceramic insulator 10. The ceramic insulator 10 is formed by printing and applying in a predetermined pattern by using a printing method such as the screen printing method.
[0032]
The wiring layer 11 is formed by depositing a metal having excellent corrosion resistance such as nickel and gold and excellent wettability with a brazing material to a thickness of 1 μm to 20 μm by plating. 11 can be effectively prevented, and the brazing of the external lead terminal 13 to the wiring layer 11 can be strengthened. Therefore, the wiring layer 11 is preferably coated with a metal having excellent corrosion resistance, such as nickel and gold, and excellent wettability with the brazing material on the exposed surface to a thickness of 1 μm to 20 μm.
[0033]
Also, external lead terminals 13 are brazed and attached to the wiring layer 11 via a brazing material such as silver solder, and the external lead terminals 13 connect the electrodes of the optical semiconductor element 4 accommodated in the container 5 to the outside. The optical semiconductor element 4 which is electrically connected to the electric circuit and is accommodated in the container 5 by connecting the external lead terminal 13 to the external electric circuit is connected to the external electric circuit via the wiring layer 11 and the external lead terminal 13. It will be electrically connected to the circuit.
[0034]
The external lead terminal 13 is made of a metal material such as iron-nickel-cobalt alloy or iron-nickel alloy. For example, an ingot made of a metal such as iron-nickel-cobalt alloy is rolled or punched. Then, it is formed into a predetermined shape by applying a conventionally known metal processing method.
[0035]
Further, a lid member 3 made of, for example, a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy is joined to the upper surface of the frame body 2, whereby the base body 1, the frame body 2, and the lid member 3 are joined together. The optical semiconductor element 4 is hermetically sealed inside the resulting container 5.
[0036]
The lid member 3 is joined to the upper surface of the frame 2 by, for example, welding such as a seam weld method.
[0037]
In the package for housing an optical semiconductor element of the present invention, the base 1 is melted with silicon carbide powder having an oxide film deposited on the surface of 65 to 80% by weight and copper of 20 to 35% by weight. It is important to form the silicon carbide powder by dispersing and mixing it .
[0038]
In an oxide film of silicon carbide powder deposited and 20 to 35 wt% of copper said substrate 1 65 to 80 wt% of the surface, that is formed by a silicon carbide powder to the copper was melted and dispersed mixed from it shall thermal conductivity of the substrate 1 is higher than 270 W / m · K, as a result, the heat also as a semiconductor element 4 mounted on the base body 1 has issued a large amount of heat during operation base 1 Can be quickly spread in the plane direction of the mounting portion 1a and can be propagated in the thickness direction of the substrate 1 efficiently and efficiently and efficiently dissipated to the outside. As a result, the optical semiconductor element 4 always has an appropriate temperature. It becomes possible to operate the element 4 stably and normally over a long period of time.
[0039]
Der The Ri consists of 65 to 80 wt% of silicon carbide powder deposited oxide film on the surface of the 20 to 35% by weight of copper described above, that the silicon carbide powder to the copper was melted and dispersed mixed The substrate 1 has a linear thermal expansion coefficient of a ceramic terminal made of a frame body 2 made of iron-nickel-cobalt alloy or iron-nickel alloy, or a ceramic insulator 10 such as an aluminum oxide sintered body or a glass ceramic sintered body. It approximates the linear thermal expansion coefficient of the body 9 (6 ppm / ° C. to 8 ppm / ° C .: room temperature to 800 ° C.). As a result, when attaching the frame body 2, the ceramic terminal body 9, etc. Even when heat is applied to the base body 1, the frame body 2, and the ceramic terminal body 9 when the semiconductor element 4 is actuated, the linear thermal expansion coefficients of the two are between the base body 1, the frame body 2, and the ceramic terminal body 9. Large due to differences Thermal stresses are not generated, thereby becomes always hermetic sealing of the container 5 housing the optical semiconductor element 4 completely, the optical semiconductor element 4 can be operated stably and properly.
[0040]
Note that when the amount of silicon carbide powder having an oxide film deposited on the surface of the substrate 1 is less than 65% by weight, in other words, when the amount of copper exceeds 35% by weight, the linear thermal expansion coefficient of the substrate 1 becomes a frame. As a result, the frame body 2 cannot be firmly attached to the base body 1 and the surface of the carbonized carbon film is covered with an oxide film. When the amount of silicon powder exceeds 80% by weight, in other words, when the amount of copper is less than 20% by weight, the thermal conductivity of the substrate 1 is greatly deteriorated, and when the optical semiconductor element 4 generates a large amount of heat during operation, The heat cannot be completely dissipated to the outside through the base 1, and as a result, the optical semiconductor element 4 is heated to a high temperature, causing the optical semiconductor element 4 to be thermally destroyed, or having a variation in characteristics, thereby stably operating. It becomes impossible to do. Accordingly, the substrate 1 is specified such that the amount of silicon carbide powder having an oxide film deposited on the surface thereof is in the range of 65 to 80% by weight and the amount of copper is in the range of 20 to 35% by weight.
[0041]
The silicon carbide powder deposited oxide film on the 65 to 80 wt% of the surface, the substrate 1 consisting of a 20 to 35% by weight of copper oxide film on the surface of the silicon carbide powder, for example of SiO ₂ or the like the deposited is allowed by us Kukoto a film thickness of about 0.05μm to 1 [mu] m, the reliability of the substrate 1 adhesion strength is greatly improved with the silicon carbide powder and the copper is greatly improved. Therefore, it is necessary to form the substrate 1 with silicon carbide powder and copper with an oxide film deposited on the surface to a thickness of 0.05 μm to 1 μm.
[0042]
Wherein an oxide film on the surface of the silicon carbide powder as a method of depositing, for example, a carbide silicofluoride Motoko powder is carried out by heating at a temperature of about 1200 ° C. in air.
[0043]
Furthermore, the substrate 1 from the formed by dispersing mixing silicon carbide powder to the copper was melted, becomes as soft about 100GPa Young's modulus of the base 1 is dependent on the Young's modulus of copper, as a result, the substrate 1 Even if heat is applied to the base 1 and the optical semiconductor element 4 after the optical semiconductor element 4 is placed thereon and a thermal stress is generated between the two, the thermal stress is improved by slightly deforming the base 1. It is well absorbed, and the optical semiconductor element 4 can be operated normally and stably without the optical semiconductor element 4 being peeled off from the substrate 1 and without being cracked or cracked.
[0044]
Thus, according to the above-described package for housing an optical semiconductor element, the optical semiconductor element 4 is fixed on the optical semiconductor element mounting portion 1a of the base 1, and each electrode of the optical semiconductor element 4 is fixed to the predetermined region via the bonding wire 12. Next, the lid member 3 is joined to the upper surface of the frame body 2, the optical semiconductor element 4 is accommodated in the container 5 including the base body 1, the frame body 2, and the lid member 3. By attaching the optical fiber member 8 to the cylindrical fixing member 6 attached to the body 2, an optical semiconductor device as a final product is obtained.
[0045]
In addition, this invention is not limited to the above-mentioned Example, A various change is possible if it is a range which does not deviate from the summary of this invention.
[0046]
【The invention's effect】
According to the optical semiconductor element storage package of the present invention, the base is carbonized into molten copper with silicon carbide powder having an oxide film deposited on the surface of 65 to 80% by weight and 20 to 35% by weight of copper. Even if the optical semiconductor element mounted on the substrate emits a large amount of heat during operation, it is formed by dispersing and mixing silicon powder and has a high thermal conductivity of 270 W / m · K or higher. The heat spreads quickly in the plane direction of the optical semiconductor element mounting portion of the base and can propagate well in the thickness direction of the base to efficiently and reliably dissipate to the outside. It becomes possible to operate the optical semiconductor element stably and normally over a long period of time.
[0047]
Further, according to the optical semiconductor element storage package of the present invention, the base is melted with copper carbide powder having an oxide film deposited on the surface of 65 to 80% by weight and copper of 20 to 35% by weight. Formed by dispersing and mixing silicon carbide powder , and its linear thermal expansion coefficient is a frame made of iron-nickel-cobalt alloy or iron-nickel alloy, or ceramic insulator such as aluminum oxide sintered body or glass ceramic sintered body Since it approximates the linear thermal expansion coefficient (6 ppm / ° C. to 8 ppm / ° C .: room temperature to 800 ° C.) of the ceramic terminal body made of Even when heat is applied to the base body, the frame body, and the ceramic terminal body when the semiconductor element is operated, the difference between the linear thermal expansion coefficients of the base body, the frame body, and the ceramic terminal body is large. Thermal stresses are not generated, thereby becomes always hermetic sealing of the cavity for accommodating the optical semiconductor element completely, the optical semiconductor element can be actuated stably and properly. In addition, in a base made of silicon carbide powder having an oxide film deposited on the surface of 65 to 80% by weight and copper of 20 to 35% by weight, the oxide film is deposited on the surface of the silicon carbide powder. As a result, the adhesion strength between the silicon carbide powder and copper is greatly improved, and the reliability of the substrate is greatly improved. In addition, since the substrate is formed by dispersing and mixing silicon carbide powder in molten copper, the substrate has a soft Young's modulus of about 100 GPa, which depends on the Young's modulus of copper. After the optical semiconductor element is placed on the substrate, even if heat acts on the base and the optical semiconductor element and a thermal stress is generated between the two, the thermal stress is efficiently absorbed by slightly deforming the base. The semiconductor element can be operated normally and stably without the semiconductor element being peeled off from the base and without being cracked or cracked in the optical semiconductor element.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an embodiment of an optical semiconductor element housing package of the present invention.
2 is a plan view of the optical semiconductor element housing package shown in FIG. 1. FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Base | substrate 1a ... Placement part 2 ... Frame 2a ... Through-hole 2b ... Notch part 3 ... Lid member 4 ... Optical semiconductor element 5... Container 6... Fixing member 7. Translucent member 8... Optical fiber member 9.・ Ceramic insulator

Claims (1)

A base having a mounting portion on which an optical semiconductor element is mounted; and an iron having a through-hole and a notch on the side, attached so as to surround the optical semiconductor element mounting portion on the base; A frame made of nickel-cobalt alloy or iron-nickel alloy, a fixing member attached to the through-hole or a frame around the through-hole, to which an optical fiber member is joined, and inserted into the notch, ceramic insulating An optical semiconductor comprising a ceramic terminal body on which a wiring layer to which each electrode of the optical semiconductor element is connected is formed on the body, and a lid member that is attached to the upper surface of the frame body and hermetically seals the optical semiconductor element a package device housing, the substrate Ri consists oxide film of silicon carbide powder deposited and 20 to 35 wt% of copper 65 to 80% by weight of a surface, the carbide to the copper was melted Disperse silicon powder An optical semiconductor element storage package of Der characterized Rukoto those allowed.

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