JP2003101123A - Package for storage of optical semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem of a conventional package such that it cannot efficiently radiate the heat generated during its working by an optical semiconductor element to the outside and thermal fracture occurs in the optical semiconductor element. SOLUTION: This package for storage of an optical semiconductor element comprises a substrate 1, a frame consisting of iron - nickel - covalt alloy or iron - nickel alloy having a through hole 2a or a cut 2b at its flank, a fixing member 6 where an optical fiber member 8 is joined, a ceramic terminal body 9 where a wiring layer is made in a ceramic insulator 10, and a cover member 3. The above substrate 1 consists of silicon carbide and copper, and has three- layer structure where upper and lower layers 1b and 1c consisting of 65-80 wt.% silicon carbide and 20-35 wt.% copper are arranged at both faces of top and bottom of a middle layer consisting of 25-55 wt.% silicon carbide and 45-75 wt.% copper.

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor element housing package for housing an optical semiconductor element. 2. Description of the Related Art Conventionally, a package for housing an optical semiconductor device for housing an optical semiconductor device is generally made of iron-nickel.
A base made of a metal material such as a cobalt alloy or an iron-nickel alloy and having a mounting portion on which an optical semiconductor element is mounted at the center of the upper surface; and a silver base on the base so as to surround the optical semiconductor element mounting portion. A frame made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy having a through hole and a cutout at a side portion, which is joined through a brazing material such as a brazing material; A cylindrical fixing member attached to a frame around the hole and having a space through which an optical signal is transmitted and made of a metal material such as an iron-nickel-cobalt alloy; A translucent member made of amorphous glass or the like that blocks the inside of the fixing member attached via a low-melting brazing material such as a gold-tin alloy at a temperature of up to 400 ° C .; For ceramic insulators such as aluminum oxide sintered bodies A ceramic terminal body having a wiring layer to which each electrode of the semiconductor element is electrically connected via a bonding wire, and a lid member attached to an upper surface of the frame body and hermetically sealing the optical semiconductor element. The optical semiconductor element is mounted and fixed on the optical semiconductor element mounting portion of the base, and each electrode of the optical semiconductor element is electrically connected to a wiring layer of the ceramic terminal body via a bonding wire. Thereafter, a lid member is joined to the upper surface of the frame body, and the optical semiconductor element is hermetically accommodated in a container including the base, the frame body, and the lid member, and the optical fiber member is mounted on the cylindrical fixing member, for example, by YAG welding or the like. An optical semiconductor device as a product can be obtained by attaching. In the above-mentioned package for housing an optical semiconductor element, the base and the frame are formed of a metal material because the optical semiconductor element accommodated therein is driven in a high frequency range and is easily affected by external noise. By shielding the inside of the container, external noise is prevented from affecting the optical semiconductor element. In addition, an iron-nickel-cobalt alloy, an iron-nickel alloy, or the like is generally used for the base and the frame in order to match the coefficient of linear thermal expansion of the ceramic terminal and the optical semiconductor element. However, in this conventional package for housing an optical semiconductor element, the thermal conductivity of the base on which the optical semiconductor element is mounted and fixed is about 20 W / m · K, and heat cannot be transmitted efficiently. Therefore, when the optical semiconductor element generates heat during operation, the heat cannot be sufficiently radiated to the outside through the base, and as a result, the optical semiconductor element becomes high in temperature due to the heat generated by the optical semiconductor element itself, There is a drawback that thermal destruction is caused or characteristics are degraded by heat, resulting in malfunction. [0005] In order to solve the above-mentioned drawbacks, the base is formed of a copper-tungsten alloy or a copper-molybdenum alloy having a high thermal conductivity and a linear thermal expansion coefficient close to that of the ceramic terminal body. It is possible. Such a copper-tungsten alloy or copper-molybdenum alloy is generally obtained by sintering tungsten powder or molybdenum powder to obtain a sintered porous body, and then impregnating the pores of the sintered porous body with molten copper. For example, when a sintered porous body made of tungsten is impregnated with copper, the sintered porous body is made of 75 to 90% by weight, copper is contained in a range of 10 to 25% by weight, and the sintered porous body is made of molybdenum. When the porous body is impregnated with copper, the sintered porous body should be 80 to 9
0% by weight and copper in the range of 10 to 20% by weight. However, in this conventional package for housing an optical semiconductor element, a sintered body is obtained by firing a tungsten powder or a molybdenum powder as a base material, It is formed by impregnating the holes with molten copper, and has a thermal conductivity of about 180 W / m · K. For this reason, the conventional package for optical semiconductor element storage using a copper-tungsten alloy or the like as a base is more heat-dissipating than the package for optical semiconductor element storage using an iron-nickel-cobalt alloy or the like as a base. When an optical semiconductor device that emits a large amount of heat during operation is high, but the heat generated by the optical semiconductor device is completely released to the outside through the base when the optical semiconductor device is high in operation, but has a high luminous output recently. As a result, the optical semiconductor element is heated to a high temperature due to the heat generated by the element itself, and has a drawback that the optical semiconductor element cannot be operated stably due to thermal destruction or variations in characteristics. Was. The present invention has been devised based on the above findings, and has as its object to always maintain an optical semiconductor element which emits a large amount of heat during operation at a suitable temperature and stably maintain the optical semiconductor element for a long period of time. An object of the present invention is to propose an optical semiconductor element housing package that can function. According to the present invention, there is provided a base having a mounting portion on which an optical semiconductor device is mounted on an upper surface, and surrounding the optical semiconductor device mounting portion on the base. Attached
A frame made of an iron-nickel-cobalt alloy or an iron-nickel alloy having a through-hole and a cutout in a side portion; and a fixing member attached to the through-hole or the frame around the through-hole and joined to the optical fiber member. And a ceramic terminal body, which is inserted into the cutout portion, and on which a wiring layer for connecting each electrode of the optical semiconductor element is formed on the ceramic insulator,
An optical semiconductor element housing package attached to an upper surface of the frame and comprising a lid member for hermetically sealing the optical semiconductor element, wherein the base is made of silicon carbide and copper, and silicon carbide is 25 to 55-80% by weight of silicon carbide on both upper and lower surfaces of an intermediate layer comprising 55% by weight and 45-75% by weight of copper;
It is characterized in that it has a three-layer structure in which upper and lower layers composed of 20 to 35% by weight of copper are arranged. According to the package for housing an optical semiconductor element of the present invention, the base is composed of 25 to 55% by weight of silicon carbide and 4% by weight of copper.
Since the intermediate semiconductor layer of 5 to 75% by weight has a three-layer structure in which upper and lower layers of 65 to 80% by weight of silicon carbide and 20 to 35% by weight of copper are arranged on both upper and lower surfaces, the optical semiconductor element of the base is formed. The thermal conductivity of the placed intermediate layer is 270 W / m
-Even if the optical semiconductor element mounted on the substrate generates a large amount of heat during operation, the heat is transmitted to the intermediate layer via the upper layer of the substrate and the intermediate layer It can be quickly spread in the plane direction and efficiently and reliably radiated to the outside through the intermediate layer and the lower layer in order, so that the optical semiconductor element always has an appropriate temperature, and the optical semiconductor element operates stably and normally for a long period of time. It is possible to do. Further, according to the package for housing an optical semiconductor element of the present invention, the base is made of silicon carbide of 25 to 55% by weight and copper of 45 to 75% by weight. %, And a three-layer structure in which upper and lower layers of 20 to 35% by weight of copper are arranged. An intermediate layer having a large linear thermal expansion coefficient is sandwiched between upper and lower layers having a small linear thermal expansion coefficient to reduce the linear thermal expansion coefficient of the entire substrate. Since the coefficient of linear expansion was approximated to that of a frame made of an iron-nickel-cobalt alloy or an iron-nickel alloy or a ceramic terminal made of a ceramic insulator such as an aluminum oxide sintered body or a glass ceramic sintered body. Even when heat is applied to the base and the frame or the ceramic terminal when the frame or the ceramic terminal is mounted thereon or when the optical semiconductor device is operated, the base and the frame or the ceramic are not affected. A large thermal stress due to the difference between the linear thermal expansion coefficients of the two does not occur between the semiconductor device and the terminal body, and the hermetic sealing of the cavity accommodating the optical semiconductor element is always perfect, and the optical semiconductor The element can be operated stably and normally. Next, the present invention will be described in detail based on an embodiment shown in the accompanying drawings. 1 and 2 show one embodiment of the package for housing an optical semiconductor element of the present invention.
In the figures, 1 is a base, 2 is a frame, and 3 is a lid member. The base 1, the frame 2, and the lid member 3 constitute a container 5 in which the optical semiconductor element 4 is hermetically accommodated. The substrate 1 has a mounting portion 1a on which an optical semiconductor element 4 is mounted, and the optical semiconductor element 4 is attached to the mounting portion 1a. The base 1 functions as a support member for supporting the optical semiconductor element 4 and absorbs heat generated when the optical semiconductor element 4 is operated well, and efficiently dissipates it into the atmosphere to keep the optical semiconductor element 4 constant. It works to make it the right temperature. The substrate 1 is made of silicon carbide and copper. For example, a porous material is obtained by dispersing and mixing silicon carbide powder having an average particle size of about 5 μm into molten copper, or by firing silicon carbide powder. It is manufactured by obtaining a sintered body, and then filling the pores of the sintered body with molten copper. Further, on the outer peripheral portion of the upper surface of the base 1, the base 1
Mounting section 1a on which the optical semiconductor element 4 provided on the upper surface is mounted
The frame 2 is attached via an adhesive such as a brazing filler metal so as to surround the optical semiconductor element 4. A space for accommodating the optical semiconductor element 4 is formed inside the frame 2. The frame 2 is formed of an iron-nickel-cobalt alloy or an iron-nickel alloy. For example, the frame 2 is formed by pressing an ingot (lumps) of an iron-nickel-cobalt alloy or the like into a frame shape by pressing. Attachment to the substrate 1 is performed by brazing the upper surface of the substrate 1 and the lower surface of the frame 2 via a silver brazing material. The frame 2 is provided with a through hole 2a on the side thereof, and a cylindrical fixing member 6 is attached to the inner wall surface of the through hole 2a. At one end, for example, a translucent member 7 is attached. A through hole 2a formed on the side of the frame 2 acts as a mounting hole for fixing the fixing member 6 to the frame 2, and a well-known drill is formed in the side of the frame 2. It is formed in a predetermined shape by performing drilling. The fixing member 6 attached to the through-hole 2a of the frame 2 functions as a base fixing member for fixing the optical fiber member 8 to the frame 2, and the optical semiconductor element 4
Has a function of transmitting the excited light to the optical fiber member 8. For example, a translucent member 7 is attached to one end on the inside, and the optical fiber member 8 is attached to one end on the outside. The cylindrical fixing member 6 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy.
For example, it is formed by pressing an ingot (lump) such as an iron-nickel-cobalt alloy into a tubular shape. Further, the fixing member 6 is provided at one end on its inner side.
For example, a translucent member 7 is attached, the translucent member 7 closes the internal space of the fixing member 6, and hermetically seals the container 5 including the base 1, the frame 2, and the lid 3. It functions to transmit the excited light of the optical semiconductor element 4 that is held and transmitted through the internal space of the fixing member 6 to the optical fiber member 8 attached to the fixing member 6 as it is. The translucent member 7 is made of, for example, a lead-based amorphous glass mainly containing silicon oxide and lead oxide and a borosilicate amorphous glass mainly containing boric acid and silica sand. Since the crystalline glass does not have a crystal axis, when the light excited by the optical semiconductor element 4 is passed through the translucent member 7 and transmitted to and received from the optical fiber member 8, the light excited by the optical semiconductor element 4 is transmitted through the translucent member. 7 does not cause birefringence and is transmitted and received as it is to the optical fiber member 8. As a result, the optical fiber member 8 of the light excited by the optical semiconductor element 4 is obtained.
The transmission / reception of the optical signal becomes high, and the transmission efficiency of the optical signal can be made high. The attachment of the translucent member 7 to the fixing member 6 is performed, for example, by attaching a metal layer to the outer periphery of the translucent member 7 in advance. Through a brazing material such as a gold-tin alloy. The frame 2 has a notch 2b formed on the side thereof, and the notch 2b has a ceramic terminal 9
Is inserted. The ceramic terminal body 9 comprises a ceramic insulator 10 and a plurality of wiring layers 11.
Is disposed from the inside to the outside of the frame 2 with electrical insulation from the frame 2, and the ceramic insulator 1 is provided.
A metal layer is previously applied to the side surface of the frame 2 and the metal layer is attached to the inner wall surface of the notch 2b of the frame 2 through a brazing material such as silver brazing to insert the metal layer into the notch 2b of the frame 2. Be worn. The ceramic insulator 10 of the ceramic terminal body 9 is made of an aluminum oxide sintered body, a glass ceramic sintered body, or the like. An appropriate organic binder, a plasticizer, and a solvent are added to and mixed with raw material powders such as magnesium and calcium oxide to form a slurry, and the slurry is formed into a ceramic green sheet by employing a conventionally known doctor blade method or calendar roll method. (Ceramic green sheet) is formed, and then the ceramic green sheet is appropriately punched to form a predetermined shape and, if necessary, a plurality of sheets are laminated to form a molded body. It is manufactured by firing at a temperature of A plurality of wiring layers 11 extending from the inside to the outside of the frame body 2 are embedded in the ceramic terminal body 9, and a region of the wiring layer 11 located inside the frame body 2 has light. Each electrode of the semiconductor element 4 is electrically connected via a bonding wire 12, and an external lead terminal 13 connected to an external electric circuit is made of a brazing material such as silver brazing in a region located outside the frame 2. It is attached via brazing. The wiring layer 11 functions as a conductive path for connecting each electrode of the optical semiconductor element 4 to an external electric circuit, and is formed of a metal powder such as tungsten, molybdenum, manganese, copper, silver and the like. The wiring layer 11 is formed by adding a metal paste such as tungsten, molybdenum, manganese, copper, silver or the like to a ceramic green sheet to be a ceramic insulator 10 by adding and mixing an appropriate organic binder, a solvent, and the like. The ceramic insulator 10 is formed by printing and applying a predetermined pattern in advance by using a conventionally known printing method such as a screen printing method. The wiring layer 11 is preferably provided with a metal having excellent corrosion resistance such as nickel and gold and excellent wettability with a brazing material to a thickness of 1 μm to 20 μm by a plating method on the exposed surface. In addition, the oxidation corrosion of the wiring layer 11 can be effectively prevented, and the brazing of the external lead terminals 13 to the wiring layer 11 can be made firm. Therefore, it is preferable that a metal having excellent corrosion resistance, such as nickel and gold, and excellent in wettability with a brazing material be applied to the exposed surface of the wiring layer 11 to a thickness of 1 μm to 20 μm. The wiring layer 11 has an external lead terminal 1
The external lead terminal 13 has a function of electrically connecting each electrode of the optical semiconductor element 4 housed inside the container 5 to an external electric circuit. None, by connecting the external lead terminal 13 to an external electric circuit, the optical semiconductor element 4 housed in the container 5 is electrically connected to the external electric circuit via the wiring layer 11 and the external lead terminal 13. Become. The external lead terminal 13 is made of iron-nickel-
For example, an ingot made of a metal material such as a cobalt alloy or an iron-nickel alloy and made of a metal such as an iron-nickel-cobalt alloy is subjected to a conventionally known metal working method such as a rolling method or a punching method. Is formed into a predetermined shape. Further, a lid member 3 made of a metal material such as, for example, an iron-nickel-cobalt alloy or an iron-nickel alloy is joined to the upper surface of the frame 2 to thereby form the base 1.
The optical semiconductor element 4 is hermetically sealed inside the container 5 including the frame 2 and the lid member 3. The lid member 3 is joined to the upper surface of the frame 2 by, for example, welding such as a seam welding method. In the package for housing an optical semiconductor element according to the present invention, the base 1 is made of 65 to 80% by weight of silicon carbide on both upper and lower surfaces of an intermediate layer made of 25 to 55% by weight of silicon carbide and 45 to 75% by weight of copper. It is important to have a three-layer structure in which upper and lower layers of 20% to 35% by weight of copper are arranged. The base 1 is composed of an intermediate layer composed of 25 to 55% by weight of silicon carbide and 45 to 75% by weight of copper, and 65 to 80% by weight of silicon carbide and 20 to 35% by weight of copper on both upper and lower surfaces. Due to the three-layer structure in which the lower layer is disposed, the thermal conductivity of the intermediate layer 1c of the base 1 is set to a high value of 270 W / m · K or more, and a large amount of heat is generated when the semiconductor element 4 mounted on the base 1 is operated. Is generated, the heat is transferred to the intermediate layer 1 via the upper layer 1b, which is the semiconductor element mounting portion 1a of the base 1.
c, while being quickly spread in the plane direction of the intermediate layer 1c and efficiently and reliably radiated to the outside via the intermediate layer 1c and the lower layer 1d in sequence, whereby the optical semiconductor element 4 is always kept at an appropriate temperature. Thus, the optical semiconductor element 4 can be operated stably and normally for a long period of time. Further, according to the package for housing an optical semiconductor element of the present invention, the substrate 1 is made of silicon carbide of 25 to 55% by weight,
65-80% by weight of silicon carbide and 20-35% by weight of copper on both upper and lower surfaces of an intermediate layer made of 45-75% by weight of copper
And an upper and lower layer 1 having a small linear thermal expansion coefficient.
b, 1d, the linear thermal expansion coefficient of the entire
Because the linear thermal expansion coefficient of the frame 2 made of a nickel-cobalt alloy or an iron-nickel alloy or the ceramic terminal body 9 made of a ceramic insulator 10 such as an aluminum oxide sintered body or a glass ceramic sintered body was approximated. The base 1 and the frame 2 are attached when the frame 2, the ceramic terminal 9, or the like is attached to the base 1, or when the optical semiconductor element 4 is operated.
Even when heat acts on the ceramic terminal body 9 and the ceramic terminal body 9, no large thermal stress is generated between the base 1, the frame body 2, and the ceramic terminal body 9 due to a difference in linear thermal expansion coefficient between the two. Accordingly, the hermetic sealing of the container 5 accommodating the optical semiconductor element 4 is always completely completed, and the optical semiconductor element 4 can be operated stably and normally. When the amount of silicon carbide in the upper and lower layers 1b and 1d is less than 65% by weight or exceeds 80% by weight, the linear thermal expansion coefficient of the As a result, the expansion coefficient greatly differs from the expansion coefficient. As a result, the frame 2 cannot be firmly attached to the base 1. Therefore, the upper and lower layers 1b of the base 1,
1d specifies the amount of silicon carbide forming it in the range of 65 to 80% by weight. The amount of silicon carbide in the intermediate layer 1c is 25
When the amount of copper is less than 75% by weight, in other words, when the amount of copper exceeds 75% by weight, the coefficient of linear thermal expansion of the base 1 greatly differs from the coefficient of linear thermal expansion of the frame 2 and the ceramic terminal body 9 so that the frame 2 When the amount of silicon carbide exceeds 55% by weight, in other words, when the amount of copper is less than 45% by weight, the thermal conductivity of the intermediate layer 1c cannot be secured. Cannot be achieved as high as 270 W / m · K or more, and when the optical semiconductor element 4 generates a large amount of heat during operation, the heat cannot be completely radiated to the outside via the base 1, As a result, the optical semiconductor element 4 is heated to a high temperature to cause thermal destruction of the optical semiconductor element 4, or the characteristics are varied, so that the optical semiconductor element 4 cannot be operated stably. Therefore, the intermediate layer 1c of the substrate 1
Is specified as 25 to 55% by weight of silicon carbide and 45 to 75% by weight of copper. Furthermore, if the upper and lower layers 1b and 1d have substantially the same composition and thickness, the stress generated between the upper layer 1b and the intermediate layer 1c and the stress generated between the lower layer 1d and the intermediate layer 1c. Are canceled out, and the flatness of the base 1 is improved. As a result, the frame 2 and the ceramic terminal 9 can be bonded very firmly to the base 1, and the reliability of the hermetic sealing of the container 5 can be further ensured. As a result, the operation reliability of the optical semiconductor element 4 housed inside the container 5 can be made more stable and reliable. Further, the upper and lower layers 1b and 1d and the intermediate layer 1
As for the thickness of c, the thickness of the upper and lower layers 1b and 1d is X,
Assuming that the thickness of c is Y, setting the range of 0.25Y ≦ X ≦ 0.5Y allows the heat generated by the semiconductor element 4 to be better radiated to the outside through the base 1. When the thickness of the upper and lower layers 1b and 1d is X and the thickness of the intermediate layer 1c is Y, if 0.5Y <X, the intermediate layer 1c having a high thermal conductivity of 270 W / m · K or more becomes thinner and the semiconductor element 4 There is a risk that the heat generated by the intermediate layer 1c may not be efficiently dissipated to the outside. If 0.25Y> X, the effect of the intermediate layer 1c having a large linear thermal expansion coefficient on the entire substrate 1 increases, and the line of the substrate 1 Since there is a risk that it is difficult to approximate the thermal expansion coefficient to the linear thermal expansion coefficient of the frame-shaped insulator 2, the thicknesses of the upper and lower layers 1b and 1d and the intermediate layer 1c are equal to those of the upper and lower layers 1b and 1d. Assuming that the thickness is X and the thickness of the intermediate layer 1c is Y, the range of 0.25Y ≦ X ≦ 0.5Y is desirable. The substrate 1 having the three-layer structure is provided with an intermediate layer 1c.
A predetermined amount of a silicon carbide-copper plate and upper and lower layers 1b, 1b
A silicon carbide-copper plate serving as d is prepared, and the upper and lower layers of the plate serving as the intermediate layer 1c are sandwiched between the upper and lower layers 1b and 1d. It is manufactured by pressing while heating at a slightly higher temperature. Thus, according to the optical semiconductor element housing package described above, the optical semiconductor element 4 is fixed on the optical semiconductor element mounting portion 1 a of the base 1, and each electrode of the optical semiconductor element 4 is connected via the bonding wire 12. Predetermined wiring layer 1
1, the lid member 3 is joined to the upper surface of the frame 2, the optical semiconductor element 4 is accommodated in the container 5 including the base 1, the frame 2, and the lid member 3. By attaching the optical fiber member 8 to the cylindrical fixing member 6 attached to the optical semiconductor device, an optical semiconductor device as a final product is obtained. The present invention is not limited to the above-described embodiment, and various changes can be made without departing from the gist of the present invention. According to the package for housing an optical semiconductor element of the present invention, silicon carbide is formed on both upper and lower surfaces of an intermediate layer comprising silicon carbide of 25 to 55% by weight and copper of 45 to 75% by weight. Since it has a three-layer structure in which upper and lower layers of 65 to 80% by weight and 20 to 35% by weight of copper are arranged, the thermal conductivity of the upper layer on which the base optical semiconductor element is mounted is 270 W / m.
-Even if the optical semiconductor element mounted on the substrate generates a large amount of heat during operation, the heat is transmitted to the intermediate layer via the upper layer of the substrate and the intermediate layer It can be quickly spread in the plane direction and efficiently and reliably radiated to the outside through the intermediate layer and the lower layer in order, so that the optical semiconductor element always has an appropriate temperature, and the optical semiconductor element operates stably and normally for a long period of time. It is possible to do. Further, according to the package for housing an optical semiconductor element of the present invention, the base is made of 25 to 55% by weight of silicon carbide and 65 to 80% by weight of silicon carbide on both upper and lower surfaces of an intermediate layer made of 45 to 75% by weight of copper. % And copper in an amount of 20 to 35% by weight, and has a three-layer structure in which an intermediate layer having a large linear thermal expansion coefficient is sandwiched between upper and lower layers having a small linear thermal expansion coefficient to reduce the linear thermal expansion coefficient of the entire substrate. Since the coefficient of linear thermal expansion of a frame made of an iron-nickel-cobalt alloy or an iron-nickel alloy or a ceramic terminal made of a ceramic insulator such as an aluminum oxide sintered body or a glass ceramic sintered body was approximated, Even when heat is applied to the base and the frame or the ceramic terminal when the frame or the ceramic terminal is mounted thereon or when the optical semiconductor device is operated, the base and the frame or the ceramic are not affected. A large thermal stress due to the difference between the linear thermal expansion coefficients of the two does not occur between the semiconductor device and the terminal body, and the hermetic sealing of the cavity accommodating the optical semiconductor element is always perfect, and the optical semiconductor The element can be operated stably and normally.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing one embodiment of an optical semiconductor element housing package of the present invention. FIG. 2 is a plan view of the package for housing an optical semiconductor element shown in FIG. 1; [Description of Signs] 1 ··· Base 1a ··· Placement portion 1b ···· Upper layer 1c ···· Intermediate layer 1d ····· Lower layer 2 ····· Frame 2a ··· ··· Through-hole 2b ··· Notch 3 ···· Cover member 4 ··· Optical semiconductor element 5 ··· Container 6 ····· Fixing member 7 ······ Optical member 8 Optical fiber member 9 Ceramic terminal body 10 Ceramic insulator

Claims (1)

Claims: 1. A base having a mounting part on which an optical semiconductor element is mounted on an upper surface, and a base mounted on the base so as to surround the optical semiconductor element mounting part. A frame made of an iron-nickel-cobalt alloy or an iron-nickel alloy having a through-hole and a notch in the portion, and a fixing member attached to the through-hole or the frame around the through-hole and joined to the optical fiber member. A ceramic terminal body, which is inserted into the cutout portion, and on which a wiring layer for connecting each electrode of the optical semiconductor element is formed on a ceramic insulator, is attached to the upper surface of the frame body,
A package for housing an optical semiconductor element comprising a lid member for hermetically sealing the optical semiconductor element, wherein the base is made of silicon carbide and copper, and silicon carbide is 25 to 55% by weight and copper is 45 to 75% by weight. % Of an intermediate layer having 65% to 80% by weight of silicon carbide and 20% to 35% by weight of copper. package.